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1. 发明专利

DE60034851D1 未知
公开(公告)号：DE60034851D1
公开(公告)日：2007-06-28
申请号：DE60034851
申请日：2000-08-25
申请人： MORI YUZO , EBARA CORP
发明人： MORI YUZO , SHIRAKASHI MITSUHIKO , SAITO TAKAYUKI , TOMA YASUSHI , FUKUNAGA AKIRA , KOBATA ITSUKI
IPC分类号： C23F3/00 , B23H3/08 , C25D11/02 , C25F3/00
摘要： An anode (2) as a workpiece, and a cathode (1) opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material (3) promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.

2. 发明专利

DE60034851T2 未知
公开(公告)号：DE60034851T2
公开(公告)日：2008-01-17
申请号：DE60034851
申请日：2000-08-25
申请人： MORI YUZO , EBARA CORP
发明人： MORI YUZO , SHIRAKASHI MITSUHIKO , SAITO TAKAYUKI , TOMA YASUSHI , FUKUNAGA AKIRA , KOBATA ITSUKI
IPC分类号： C23F3/00 , B23H3/08 , C25D11/02 , C25F3/00
摘要： An anode (2) as a workpiece, and a cathode (1) opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material (3) promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.

3. 发明专利

JP2001064799A ELECTROLYTIC WORKING METHOD AND DEVICE 失效
公开(公告)号：JP2001064799A
公开(公告)日：2001-03-13
申请号：JP24186999
申请日：1999-08-27
申请人： MORI YUZO , EBARA CORP
发明人： MORI YUZO , SHIRAKASHI MICHIHIKO , SAITO TAKAYUKI , TAIMA YASUSHI , FUKUNAGA AKIRA , OBATA ITSUKI
IPC分类号： B23H3/08 , C25D11/02 , C25F3/00
摘要： PROBLEM TO BE SOLVED: To provide a working method capable of executing clean working which does not leave impurities on the working face in the object to be worked by using hydroxide ions in ultrapure water. SOLUTION: In ultrapure water, an anode 2 as the object to be worked and a cathode 1 confronted with this at prescribed intervals are arranged, the space between the object to be worked and the cathode is provided with a catalytic member 3b promoting the dissociation of the ultrapure water and having water passability, and the flow of ultrapure water is formed in the catalytic member as voltage is applied on the space between the object to be worked and the cathode, by which water molecules in the ultrapure water are decomposed into hydrogen ions and hydroxide ions, the produced hydroxide ions are fed to the surface of the object to be worked, and, by chemical elution reaction or oxidation reaction by hydroxide ions, removing working or oxidized film forming working is executed to the object to be worked.

4. 发明专利

JP2000052235A POLISHING METHOD AND DEVICE THEREFOR 失效
公开(公告)号：JP2000052235A
公开(公告)日：2000-02-22
申请号：JP23499598
申请日：1998-08-06
申请人： MORI YUZO , EBARA CORP
发明人： MORI YUZO , KIMURA NORIO , SHIRAKASHI MICHIHIKO , TAIMA YASUSHI , FUKUNAGA AKIRA
IPC分类号： B24B37/00 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method and the device assuring efficient polishing by reducing washing for a polished wafer and a load to drainage treatment with the use of chemicals restraining. SOLUTION: Chemo-mechanical polishing is applied to a surface to be polished by forming a given electrical field around the surface to be polished with ultrapure water supplying between the surface to be polished of a material to be polished W and the polishing surface of a polishing member, and by sliding the surface to be polished and the polishing surface, respectively with an OH- or an H+ ion in water unevenly distributing around the surface to be polished.

5. 发明申请

WO2006022452A3 POLISHING APPARATUS AND POLISHING METHOD 审中-公开
标题翻译：抛光设备和抛光方法
公开(公告)号：WO2006022452A3
公开(公告)日：2006-06-08
申请号：PCT/JP2005016063
申请日：2005-08-26
申请人： EBARA CORP , KODERA MASAKO , MOCHIZUKI YOSHIHIRO , FUKUDA AKIRA , KODERA AKIRA , HIYAMA HIROKUNI , TSUJIMURA MANABU , HIROKAWA KAZUTO , FUKUNAGA AKIRA
发明人： KODERA MASAKO , MOCHIZUKI YOSHIHIRO , FUKUDA AKIRA , KODERA AKIRA , HIYAMA HIROKUNI , TSUJIMURA MANABU , HIROKAWA KAZUTO , FUKUNAGA AKIRA
IPC分类号： B24B37/04 , B24B49/00 , H01L21/00
CPC分类号： H01L21/6708 , B24B37/005 , B24B37/042 , B24B37/046 , B24B49/006 , B24B57/02
摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).
摘要翻译：研磨装置（30）具有研磨面（32），保持晶片（W）的顶圈（36），使研磨面（32）和晶片（W）相对移动的马达（46,56）以相对速度彼此相对移动;以及垂直移动机构（54），用于在压力下将晶片（W）压靠在抛光表面（32）上。抛光装置（30）还具有控制器（44），用于在抛光速率不与压制压力和相对速度的乘积成比例的非普雷斯顿范围内调节抛光条件。抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液并且在晶片（W）的表面内实现均匀的抛光速率。

6. 发明公开

KR20200130269A 기판 세정 장치 및 기판 세정 방법 审中-公开
公开(公告)号：KR20200130269A
公开(公告)日：2020-11-18
申请号：KR20207025076
申请日：2019-02-18
申请人： EBARA CORP
发明人： TAKATOH CHIKAKO , FUKUNAGA AKIRA , KURASHITA MASAMITSU , UNO MEGUMI , HAMADA SATOMI
IPC分类号： H01L21/67 , B08B1/00 , B08B3/02 , B08B3/12 , H01L21/02
摘要： 단시간에효과가높은세정도구의셀프클리닝을행할수 있는기판세정장치를제공한다. 기판세정장치는, 기판의표면에접촉해서기판을세정하기위한세정도구와, 세정도구에접촉해서세정도구를셀프클리닝하기위한셀프클리닝부재와, 세정도구를회전시키기위한세정도구회전기구와, 세정도구를보유지지하기위한세정도구보유지지기구이며, 세정도구를기판에압박할수 있음과함께, 세정도구를셀프클리닝부재에압박할수 있는, 세정도구보유지지기구를구비한다. 또한, 기판세정장치는, 세정도구를셀프클리닝할때 세정도구회전기구가세정도구를회전시키는셀프클리닝시 토크가, 세정도구가기판을세정할때 세정도구회전기구가세정도구를회전시키는기판세정시 토크이상의소정토크로되도록, 세정도구의셀프클리닝부재에의압박력을제어하는제어부를구비한다.

7. 发明专利

DE3881638D1 未知
公开(公告)号：DE3881638D1
公开(公告)日：1993-07-15
申请号：DE3881638
申请日：1988-09-23
申请人： EBARA CORP , EBARA RES CO LTD
发明人： FUKUNAGA AKIRA , TSUJIMURA MANABU , OHSATO MASAAKI
IPC分类号： B01D53/46 , B01D53/34
摘要： A method of treating waste gas from semiconductor manufacturing equipment (2) with a dry solid absorbent wherein a bypass (8) which is equipped with a bypass valve (7) is provided between inlet and outlet pipes of a container packed (10) with the absorbent, and when a reaction chamber (14) of the semiconductor manufacturing equipment is evacuated to a level below that of atmospheric pressure, the bypass valve is opened to prevent the large amount of non-toxic gas that is discharged from the reaction chamber during the evacuation from being fed to the absorbent-packed container. It is thus possible to avoid large variations in the flow rate of the gas and to enable safe and efficient waste gas treatment with the dry solid absorbent having a relatively small particle diameter. Also disclosed is an apparatus which may be effectively employed to practice this waste gas treatment method.

8. 发明专利

DE69627111T2 未知
公开(公告)号：DE69627111T2
公开(公告)日：2004-01-29
申请号：DE69627111
申请日：1996-11-29
申请人： EBARA CORP
发明人： NAKATSU MASATO , NAKANISHI SYU , FUKUNAGA AKIRA , SAITO TAKAYUKI , CHOUNAN KANROKU
IPC分类号： G01N1/10 , G01M3/16 , G01M3/18 , G01N27/06 , G01N33/18
摘要： The improved apparatus for detecting anions in water comprises an electrical continuous ion-exchange unit comprising an anode compartment 1 and a cathode compartment 2 which are spaced apart by an alkali removing compartment 4 packed with a cation exchanger defined by two cation-exchange membranes 3, each of said anode compartment 1, cathode compartment 2 and alkali removing compartment 4 being provided with a passageway through which water is admitted and a passageway through which the treated water is discharged, and the passageway 11 through which the treated water is discharged from the alkali removing compartment 4 is equipped with an instrument 5 for measuring the specific resistance or electrical conductivity of said treated water. The alkali removing compartment 4 may be replaced by one or more cation-exchange membranes or a treatment compartment defined by two or more cation-exchange membranes, and the passageway through which the treated water is discharged from the anode compartment is equipped with an instrument for measuring the specific resistance or electrical conductivity of the treated water. The apparatus does not require replacement of ion-exchange resins, achieves correct measurements with a simple operation and yet functions as an inexpensive salt detector.

9. 发明专利

DE3881638T2 未知
公开(公告)号：DE3881638T2
公开(公告)日：1993-09-23
申请号：DE3881638
申请日：1988-09-23
申请人： EBARA CORP , EBARA RES CO LTD
发明人： FUKUNAGA AKIRA , TSUJIMURA MANABU , OHSATO MASAAKI
IPC分类号： B01D53/46 , B01D53/34
摘要： A method of treating waste gas from semiconductor manufacturing equipment (2) with a dry solid absorbent wherein a bypass (8) which is equipped with a bypass valve (7) is provided between inlet and outlet pipes of a container packed (10) with the absorbent, and when a reaction chamber (14) of the semiconductor manufacturing equipment is evacuated to a level below that of atmospheric pressure, the bypass valve is opened to prevent the large amount of non-toxic gas that is discharged from the reaction chamber during the evacuation from being fed to the absorbent-packed container. It is thus possible to avoid large variations in the flow rate of the gas and to enable safe and efficient waste gas treatment with the dry solid absorbent having a relatively small particle diameter. Also disclosed is an apparatus which may be effectively employed to practice this waste gas treatment method.

10. 发明专利

DE69225007T2 未知
公开(公告)号：DE69225007T2
公开(公告)日：1998-08-06
申请号：DE69225007
申请日：1992-01-09
申请人： EBARA CORP
发明人： FUKUNAGA AKIRA , OKAYASU YASUJI
IPC分类号： B01D53/72 , B01D53/86 , C23C16/00
摘要： The waste gas from a chemical vapor deposition process that uses an organic source is treated by bringing it into contact with activated carbon at LV of about 300 cm/min or less at ambient temperature and then is treated by bringing it into contact with an oxidation catalyst in the presence of oxygen at S.V. of about 10,000 h or less at a temperature of about 120 - 200 DEG C, the amount of the oxygen being held at all times at a level that is not lower than the sum of the stoichiometric amounts of oxygen that are necessary to completely oxidize the CH3CHO, C2H5OH and CO present in the waste gas thereby rendering the waste gas harmless.

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