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1. 发明授权

US08110489B2 Process for forming cobalt-containing materials 失效
标题翻译：用于形成含钴材料的方法
公开(公告)号：US08110489B2
公开(公告)日：2012-02-07
申请号：US11733929
申请日：2007-04-11
申请人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-Ho Yu , Kevin Moraes , See-Eng Phan
发明人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-Ho Yu , Kevin Moraes , See-Eng Phan
IPC分类号： H01L21/28
CPC分类号： C23C16/42 , C23C16/18 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
摘要翻译：本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

2. 发明授权

US08815724B2 Process for forming cobalt-containing materials 有权
标题翻译：用于形成含钴材料的方法
公开(公告)号：US08815724B2
公开(公告)日：2014-08-26
申请号：US13452237
申请日：2012-04-20
申请人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-ho Yu , Kevin Moraes , See-Eng Phan
发明人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-ho Yu , Kevin Moraes , See-Eng Phan
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： C23C16/42 , C23C16/18 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
摘要翻译：本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

3. 发明申请

US20120264291A1 PROCESS FOR FORMING COBALT-CONTAINING MATERIALS 有权
标题翻译：形成含钴材料的方法
公开(公告)号：US20120264291A1
公开(公告)日：2012-10-18
申请号：US13452237
申请日：2012-04-20
申请人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-Ho Yu , Kevin Moraes , See-Eng Phan
发明人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-Ho Yu , Kevin Moraes , See-Eng Phan
IPC分类号： H01L21/768
CPC分类号： C23C16/42 , C23C16/18 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
摘要翻译：本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

4. 发明申请

US20110124192A1 PROCESS FOR FORMING COBALT-CONTAINING MATERIALS 审中-公开
标题翻译：形成含钴材料的方法
公开(公告)号：US20110124192A1
公开(公告)日：2011-05-26
申请号：US13014656
申请日：2011-01-26
申请人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-Ho Yu , Kevin Moraes , See-Eng Phan
发明人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-Ho Yu , Kevin Moraes , See-Eng Phan
IPC分类号： H01L21/768
CPC分类号： C23C16/18 , C23C16/42 , C23C16/56 , H01L21/02057 , H01L21/02063 , H01L21/02068 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/68785 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76864
摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
摘要翻译：本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

5. 发明申请

US20090269507A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES 审中-公开
标题翻译：选择性钴沉积铜表面
公开(公告)号：US20090269507A1
公开(公告)日：2009-10-29
申请号：US12111921
申请日：2008-04-29
申请人： Sang-Ho Yu , Kevin Moraes , Seshadri Ganguli , Hua Chung , See-Eng Phan
发明人： Sang-Ho Yu , Kevin Moraes , Seshadri Ganguli , Hua Chung , See-Eng Phan
IPC分类号： B05D3/04 , B05D5/12 , C23C16/44
CPC分类号： C23C16/16 , C23C16/0218 , C23C16/18 , H01L21/02068 , H01L21/02074 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/324 , H01L21/76849 , H01L21/7685 , H01L21/76862 , H01L21/76883
摘要： Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.
摘要翻译：本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成钴层的方法。在一个实施例中，提供了一种用于封盖衬底上的铜表面的方法，其包括将衬底定位在处理室内，其中衬底含有受污染的铜表面和电介质表面，将形成的污染的铜表面暴露于还原剂在预处理过程中的铜表面，将基底暴露于钴前体气体，以在铜表面上选择性地形成钴覆盖层，同时在气相沉积工艺期间暴露介电表面，并且在钴上沉积介电阻挡层覆盖层和电介质表面。在另一个实施方案中，沉积处理循环包括进行气相沉积工艺和随后的后处理工艺，该沉积处理循环可以重复以形成多个钴覆盖层。

6. 发明授权

US08637390B2 Metal gate structures and methods for forming thereof 有权
标题翻译：金属门结构及其形成方法
公开(公告)号：US08637390B2
公开(公告)日：2014-01-28
申请号：US13116794
申请日：2011-05-26
申请人： Seshadri Ganguli , Sang Ho Yu , Sang-Hyeob Lee , Hyoung-Chan Ha , Wei Ti Lee , Hoon Kim , Srinivas Gandikota , Yu Lei , Kevin Moraes , Xianmin Tang
发明人： Seshadri Ganguli , Sang Ho Yu , Sang-Hyeob Lee , Hyoung-Chan Ha , Wei Ti Lee , Hoon Kim , Srinivas Gandikota , Yu Lei , Kevin Moraes , Xianmin Tang
IPC分类号： H01L21/4763
CPC分类号： H01L21/28079 , H01L21/28088 , H01L21/32051 , H01L29/49
摘要： Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.
摘要翻译：本文提供了金属门结构及其形成方法。在一些实施例中，在具有形成在高k电介质层中的特征的衬底上形成金属栅极结构的方法可以包括在电介质层顶部的特征内沉积第一层; 在所述特征内在所述第一层顶部沉积包含钴或镍的第二层; 以及在第二层顶部沉积包括特征内的金属的第三层以填充该特征，其中第一层或第二层中的至少一层形成润湿层以形成后续沉积层的成核层，其中第一层第二层或第三层形成功函数层，并且其中第三层形成栅电极。

7. 发明申请

US20100304027A1 SUBSTRATE PROCESSING SYSTEM AND METHODS THEREOF 审中-公开
标题翻译：基板处理系统及其方法
公开(公告)号：US20100304027A1
公开(公告)日：2010-12-02
申请号：US12789194
申请日：2010-05-27
申请人： Wei Ti Lee , Lai Ta , Srinivas Guggilla , Kevin Moraes , Olkan Cuvalci , Regan Young , John Mazzocco
发明人： Wei Ti Lee , Lai Ta , Srinivas Guggilla , Kevin Moraes , Olkan Cuvalci , Regan Young , John Mazzocco
IPC分类号： C23C16/44 , C23C16/00
CPC分类号： C23C14/568 , C23C14/564 , C23C16/4401 , C23C16/54
摘要： Embodiments of the invention provide methods for processing substrates within a substrate processing system. In one embodiment, the method provides depositing a material on a substrate within a vapor deposition chamber coupled to a buffer chamber contained within a mainframe while maintaining a pressure of about 1×10−6 Torr or lower within a transfer chamber contained within the mainframe. The method further includes transferring the substrate from the vapor deposition chamber to the buffer chamber by a substrate handling robot while flowing a gas into the buffer chamber, evacuating the vapor deposition chamber, and maintaining a greater internal pressure within the buffer chamber than in the vapor deposition chamber. In some embodiments, the method includes transferring the substrate from the transfer chamber to a PVD chamber coupled to the transfer chamber by another substrate handling robot and depositing another material on the substrate within the PVD chamber.
摘要翻译：本发明的实施例提供了在衬底处理系统内处理衬底的方法。在一个实施例中，该方法提供了在包含在主机内的传送室内保持约1×10 -6 Torr或更低的压力的情况下，在耦合到主机内的缓冲室的气相沉积室内的衬底上沉积材料。该方法还包括：在将气体流入缓冲室的同时，通过基板处理机器人将基板从气相沉积室转移到缓冲室，抽空蒸镀室，并在缓冲室内保持比在蒸气中更大的内部压力沉积室。在一些实施例中，该方法包括将衬底从传送室转移到通过另一衬底处理机器人耦合到传送室的PVD室，并将另一材料沉积在PVD室内的衬底上。

8. 发明授权

US08558299B2 Semiconductor device with gate electrode stack including low resistivity tungsten and method of forming 有权
标题翻译：具有包括低电阻率钨的栅电极堆叠的半导体器件和形成方法
公开(公告)号：US08558299B2
公开(公告)日：2013-10-15
申请号：US13157164
申请日：2011-06-09
申请人： Yong Cao , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
发明人： Yong Cao , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
IPC分类号： H01L29/788
CPC分类号： H01L21/28079 , C23C14/165 , C23C14/345 , C23C14/35 , H01L21/28088 , H01L21/2855 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.
摘要翻译：本文所述的实施例提供了一种半导体器件及其形成方法和装置。半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。栅极电极堆叠包括在栅极介电层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。

9. 发明申请

US20110303960A1 LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING 有权
标题翻译：具有增强离子化和射频功率耦合的低电阻TUNGSTEN PVD
公开(公告)号：US20110303960A1
公开(公告)日：2011-12-15
申请号：US13157164
申请日：2011-06-09
申请人： YONG CAO , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
发明人： YONG CAO , Xianmin Tang , Srinivas Gandikota , Wei D. Wang , Zhendong Liu , Kevin Moraes , Muhammad M. Rasheed , Thanh X. Nguyen , Ananthkrishna Jupudi
IPC分类号： H01L29/788 , H01L21/283 , C23C14/34 , H01L21/3205
CPC分类号： H01L21/28079 , C23C14/165 , C23C14/345 , C23C14/35 , H01L21/28088 , H01L21/2855 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.
摘要翻译：本文所述的实施例提供了一种半导体器件及其形成方法和装置。半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。栅极电极堆叠包括在栅极电介质层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。

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