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1. 发明申请

US20090093129A1 Gas Baffle and Distributor for Semiconductor Processing Chamber 有权
标题翻译：半导体加工室的气体挡板和分配器
公开(公告)号：US20090093129A1
公开(公告)日：2009-04-09
申请号：US12253687
申请日：2008-10-17
申请人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
发明人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
IPC分类号： H01L21/31
CPC分类号： C23C16/45563 , C23C16/4401 , C23C16/4404
摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.
摘要翻译：提供了用于在半导体处理室中分配气体的装置和方法。在一个实施例中，用于气体处理室的气体分配器包括主体。主体包括具有气体偏转表面的挡板以将气体的流动从第一方向转移到第二方向。气体偏转表面包括凹面。凹面包括至少约75％的气体偏转表面的表面积。凹面大致使气体朝向室壁偏转，并且提供了来自挡板的减少的金属原子污染物，从而可以减少季节时间。

2. 发明授权

US07799704B2 Gas baffle and distributor for semiconductor processing chamber 有权
公开(公告)号：US07799704B2
公开(公告)日：2010-09-21
申请号：US12253687
申请日：2008-10-17
申请人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
发明人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45563 , C23C16/4401 , C23C16/4404
摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

3. 发明授权

US07740706B2 Gas baffle and distributor for semiconductor processing chamber 失效
标题翻译：用于半导体处理室的气体挡板和分配器
公开(公告)号：US07740706B2
公开(公告)日：2010-06-22
申请号：US11564150
申请日：2006-11-28
申请人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
发明人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4405 , C23C16/45563 , C23C16/45591 , H01J37/3244 , H01J37/32449
摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.
摘要翻译：提供了用于在半导体处理室中分配气体的装置和方法。在一个实施例中，用于气体处理室的气体分配器包括主体。主体包括具有气体偏转表面的挡板以将气体的流动从第一方向转移到第二方向。气体偏转表面包括凹面。凹面包括至少约75％的气体偏转表面的表面积。凹面大致使气体朝向室壁偏转，并且提供了来自挡板的减少的金属原子污染物，从而可以减少季节时间。

4. 发明申请

US20080124944A1 GAS BAFFLE AND DISTRIBUTOR FOR SEMICONDUCTOR PROCESSING CHAMBER 审中-公开
公开(公告)号：US20080124944A1
公开(公告)日：2008-05-29
申请号：US11564167
申请日：2006-11-28
申请人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
发明人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45563 , C23C16/4401 , C23C16/4404
摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

5. 发明申请

US20080029484A1 In-situ process diagnostics of in-film aluminum during plasma deposition 审中-公开
标题翻译：等离子体沉积期间膜内铝的原位工艺诊断
公开(公告)号：US20080029484A1
公开(公告)日：2008-02-07
申请号：US11492639
申请日：2006-07-25
申请人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Young S. Lee
发明人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Young S. Lee
IPC分类号： C23F1/00 , G06F19/00 , H01L21/306 , H05H1/24 , C23C16/00
CPC分类号： H01J37/32972 , C23C16/4401 , C23C16/52 , H01J37/32935
摘要： The concentration of various contaminants in a plasma can be monitored during processing of a substrate such as a silicon wafer, in order to prevent an unacceptable amount of contamination from being deposited on the substrate. The radiation emitted from the plasma through a window in the processing chamber during processing can be detected and measured by a tool such as an optical emission spectrograph (OES) and the relative intensity of peaks in the spectrum corresponding to various contaminants can be analyzed in order to determine contaminant concentration. In one embodiment, the concentration of aluminum in a plasma is monitored during a plasma chemical vapor deposition (CVD) process in order to ensure that the amount of aluminum in the produced device is lower than a maximum threshold amount.
摘要翻译：为了防止在衬底上沉积不可接受量的污染物，可以在诸如硅晶片的衬底的处理期间监测等离子体中各种污染物的浓度。可以通过诸如光发射光谱仪（OES）的工具来检测和测量从等离子体通过处理室中的处理室中的窗口发射的辐射，并且可以按顺序分析对应于各种污染物的光谱中的峰的相对强度以确定污染物浓度。在一个实施例中，在等离子体化学气相沉积（CVD）工艺期间监测等离子体中铝的浓度，以确保所生产的装置中的铝量低于最大阈值量。

6. 发明申请

US20080063810A1 In-situ process state monitoring of chamber 审中-公开
标题翻译：室的原位过程状态监测
公开(公告)号：US20080063810A1
公开(公告)日：2008-03-13
申请号：US11508524
申请日：2006-08-23
申请人： Soonam Park , Qiwei Liang , Zhong Qiang , Dmitry Lubomirsky , Young S. Lee
发明人： Soonam Park , Qiwei Liang , Zhong Qiang , Dmitry Lubomirsky , Young S. Lee
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： H01J37/32972 , C23C16/4401 , C23C16/52 , H01J37/32935
摘要： The process state of a chamber after a maintenance procedure can be monitored in-situ in order to ensure that the chamber is ready for processing, while minimizing waste and downtime due to aftereffects of the maintenance procedure. The composition of a bulk plasma in a process chamber can be analyzed using an analytical tool to capture the emission spectrum of the plasma. The spectrum can be analyzed to generate a model of the current chamber conditions, which can be compared to a model of ideal chamber conditions using a statistical analysis approach such as multivariate primary component analysis. If the current and ideal models match to within a set confidence level, the chamber conditions are acceptable for processing devices, and any processing of cycling workpieces or other plasma-cleansing processes can be stopped.
摘要翻译：可以在现场监测维护程序之后的室的过程状态，以确保室准备好进行处理，同时将由于维护过程的后期影响引起的浪费和停机时间最小化。可以使用分析工具来分析处理室中的体积等离子体的组成以捕获等离子体的发射光谱。可以分析光谱以产生当前室条件的模型，其可以使用诸如多变量主成分分析的统计分析方法与理想室条件的模型进行比较。如果当前和理想模型与设定的置信水平相匹配，则腔室条件对于加工设备是可接受的，并且可以停止循环工件或其他等离子体清洁过程的任何处理。

7. 发明申请

US20070281106A1 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：US20070281106A1
公开(公告)日：2007-12-06
申请号：US11754924
申请日：2007-05-29
申请人： Dmitry Lubomirsky , Qiwei Liang , Soonam Park , Kien Chuc , Ellie Yieh
发明人： Dmitry Lubomirsky , Qiwei Liang , Soonam Park , Kien Chuc , Ellie Yieh
IPC分类号： H05H1/24
CPC分类号： C23C16/45502 , C23C16/401 , C23C16/402 , C23C16/452 , C23C16/45514 , C23C16/45565 , C23C16/45574 , C23C16/45576 , C23C16/45578 , C23C16/4584 , C23C16/4586 , C23C16/505 , C23C16/509 , C23C16/52 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32724 , H01J37/32752 , H01J2237/2001 , H01J2237/3321 , H01L21/02164 , H01L21/02274 , H01L21/76224
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。顶部入口可以位于衬底台的上方，并且侧入口可以在衬底台周围径向分布。反应性自由基前体可以通过顶部入口提供给沉积室。还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

8. 发明申请

US20110011338A1 FLOW CONTROL FEATURES OF CVD CHAMBERS 有权
标题翻译： CVD气泡流量控制特征
公开(公告)号：US20110011338A1
公开(公告)日：2011-01-20
申请号：US12836726
申请日：2010-07-15
申请人： Kien N. Chuc , Qiwei Liang , Hanh D. Nguyen , Xinglong Chen , Matthew Miller , Soonam Park , Toan Q. Tran , Adib Khan , Jang-Gyoo Yang , Dmitry Lubomirsky , Shankar Venkataraman
发明人： Kien N. Chuc , Qiwei Liang , Hanh D. Nguyen , Xinglong Chen , Matthew Miller , Soonam Park , Toan Q. Tran , Adib Khan , Jang-Gyoo Yang , Dmitry Lubomirsky , Shankar Venkataraman
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/45574 , H01J37/3244 , H01J37/32449 , Y10T137/85938
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.
摘要翻译：提供了用于气体分配组件的装置和方法。一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个第三孔。

9. 发明申请

US20070289534A1 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：US20070289534A1
公开(公告)日：2007-12-20
申请号：US11754858
申请日：2007-05-29
申请人： Dmitry Lubomirsky , Qiwei Liang , Soonam Park , Kien Chuc , Ellie Yieh
发明人： Dmitry Lubomirsky , Qiwei Liang , Soonam Park , Kien Chuc , Ellie Yieh
IPC分类号： C23C16/452
CPC分类号： C23C16/46 , C23C16/452 , C23C16/45565 , C23C16/45574 , H01L21/67115
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a radiative heating system to heat the substrate that includes at least one light source, where at least some of the light emitted from the light source travels through the top side of the deposition chamber before reaching the substrate. The system may also include a precursor distribution system to introduce the reactive radical precursor and additional dielectric precursors to the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括辐射加热系统以加热包括至少一个光源的基板，其中从光源发射的至少一些光在到达基板之前穿过沉积室的顶侧。该系统还可以包括将反应性基团前体和另外的电介质前体引入沉积室的前体分配系统。还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

10. 发明申请

US20070277734A1 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：US20070277734A1
公开(公告)日：2007-12-06
申请号：US11754916
申请日：2007-05-29
申请人： Dmitry Lubomirsky , Qiwei Liang , Soonam Park , Kien Chuc , Ellie Yieh
发明人： Dmitry Lubomirsky , Qiwei Liang , Soonam Park , Kien Chuc , Ellie Yieh
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/45574 , C23C16/505
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system comprising a dual-channel showerhead positioned above the substrate stage. The showerhead may have a faceplate with a first set of openings through which the reactive radical precursor enters the deposition chamber, and a second set of openings through which a second dielectric precursor enters the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括位于衬底台上方的双通道喷头。喷头可以具有面板，其具有第一组开口，反应性自由基前体通过该开口进入沉积室，以及第二组开口，第二介电体前体通过该开口进入沉积室。还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

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