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1. 发明申请

US20100095979A1 REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS 失效
标题翻译：具有循环高低压清洁步骤的远程等离子清洁工艺
公开(公告)号：US20100095979A1
公开(公告)日：2010-04-22
申请号：US12508381
申请日：2009-07-23
申请人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
发明人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
IPC分类号： B08B7/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
摘要翻译：一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

2. 发明授权

US09826433B2 Method and system for flow control between a base station controller and a base transceiver station 有权
公开(公告)号：US09826433B2
公开(公告)日：2017-11-21
申请号：US11748412
申请日：2007-05-14
申请人： Sanjay Kamath , Michael A. Kongelf , Leif Woodahl
发明人： Sanjay Kamath , Michael A. Kongelf , Leif Woodahl
IPC分类号： H04W28/10 , H04L12/801 , H04L12/807 , H04L12/835 , H04L12/805 , H04W28/14 , H04W48/08 , H04W92/12
CPC分类号： H04W28/10 , H04L47/10 , H04L47/14 , H04L47/27 , H04L47/30 , H04L47/36 , H04W28/14 , H04W48/08 , H04W92/12
摘要： According to a disclosed embodiment, a flow indication counter is incremented each time a data packet is transmitted from a buffer. When the number of data packets transmitted equals or exceeds a threshold number, a flow indication message comprising the buffer window size is generated and transmitted to the base station controller. Further, flow indication messages can be generated and transmitted every threshold time interval, independently of the number of data packets transmitted to ensure that flow indication messages are sent at least every preset time interval. Moreover, a system for flow control can be constructed comprising a flow indication counter module configured to provide an updated number of data packets transmitted. The system further comprises a window size monitoring module which determines the buffer window size and a message generating module which generates a flow indication message comprising the buffer window size.

3. 发明申请

US20090093129A1 Gas Baffle and Distributor for Semiconductor Processing Chamber 有权
标题翻译：半导体加工室的气体挡板和分配器
公开(公告)号：US20090093129A1
公开(公告)日：2009-04-09
申请号：US12253687
申请日：2008-10-17
申请人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
发明人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
IPC分类号： H01L21/31
CPC分类号： C23C16/45563 , C23C16/4401 , C23C16/4404
摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.
摘要翻译：提供了用于在半导体处理室中分配气体的装置和方法。在一个实施例中，用于气体处理室的气体分配器包括主体。主体包括具有气体偏转表面的挡板以将气体的流动从第一方向转移到第二方向。气体偏转表面包括凹面。凹面包括至少约75％的气体偏转表面的表面积。凹面大致使气体朝向室壁偏转，并且提供了来自挡板的减少的金属原子污染物，从而可以减少季节时间。

4. 发明授权

US07740706B2 Gas baffle and distributor for semiconductor processing chamber 失效
标题翻译：用于半导体处理室的气体挡板和分配器
公开(公告)号：US07740706B2
公开(公告)日：2010-06-22
申请号：US11564150
申请日：2006-11-28
申请人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
发明人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4405 , C23C16/45563 , C23C16/45591 , H01J37/3244 , H01J37/32449
摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.
摘要翻译：提供了用于在半导体处理室中分配气体的装置和方法。在一个实施例中，用于气体处理室的气体分配器包括主体。主体包括具有气体偏转表面的挡板以将气体的流动从第一方向转移到第二方向。气体偏转表面包括凹面。凹面包括至少约75％的气体偏转表面的表面积。凹面大致使气体朝向室壁偏转，并且提供了来自挡板的减少的金属原子污染物，从而可以减少季节时间。

5. 发明申请

US20080124944A1 GAS BAFFLE AND DISTRIBUTOR FOR SEMICONDUCTOR PROCESSING CHAMBER 审中-公开
公开(公告)号：US20080124944A1
公开(公告)日：2008-05-29
申请号：US11564167
申请日：2006-11-28
申请人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
发明人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45563 , C23C16/4401 , C23C16/4404
摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

6. 发明授权

US07237007B2 Method and system for flow control between a base station controller and a base transceiver station 有权
标题翻译：基站控制器和基站收发台之间的流量控制方法和系统
公开(公告)号：US07237007B2
公开(公告)日：2007-06-26
申请号：US10010990
申请日：2001-12-05
申请人： Sanjay Kamath , Michael A. Kongelf , Leif Woodahl
发明人： Sanjay Kamath , Michael A. Kongelf , Leif Woodahl
IPC分类号： G06F15/16 , G06F15/173
CPC分类号： H04W28/10 , H04L47/10 , H04L47/14 , H04L47/27 , H04L47/30 , H04L47/36 , H04W28/14 , H04W48/08 , H04W92/12
摘要： According to a disclosed embodiment, a flow indication counter is incremented each time a data packet is transmitted from a buffer. When the number of data packets transmitted equals or exceeds a threshold number, a flow indication message comprising the buffer window size is generated and transmitted to the base station controller. Further, flow indication messages can be generated and transmitted every threshold time interval, independently of the number of data packets transmitted to ensure that flow indication messages are sent at least every preset time interval. Moreover, a system for flow control can be constructed comprising a flow indication counter module configured to provide an updated number of data packets transmitted. The system further comprises a window size monitoring module which determines the buffer window size and a message generating module which generates a flow indication message comprising the buffer window size.
摘要翻译：根据所公开的实施例，每当从缓冲器发送数据分组时，流量指示计数器递增。当发送的数据包的数量等于或超过阈值数时，产生包括缓冲器窗口大小的流指示消息并将其发送到基站控制器。此外，流量指示消息可以在每个阈值时间间隔生成和发送，而与发送的数据分组的数量无关，以确保至少每预设时间间隔发送流量指示消息。此外，可以构造用于流控制的系统，其包括被配置为提供发送的更新数量的数据分组的流量指示计数器模块。该系统还包括确定缓冲器窗口大小的窗口大小监视模块和产生包括缓冲窗口大小的流指示消息的消息生成模块。

7. 发明授权

US07799704B2 Gas baffle and distributor for semiconductor processing chamber 有权
公开(公告)号：US07799704B2
公开(公告)日：2010-09-21
申请号：US12253687
申请日：2008-10-17
申请人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
发明人： Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45563 , C23C16/4401 , C23C16/4404
摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

8. 发明申请

US20130217241A1 TREATMENTS FOR DECREASING ETCH RATES AFTER FLOWABLE DEPOSITION OF SILICON-CARBON-AND-NITROGEN-CONTAINING LAYERS 审中-公开
标题翻译：在含硅和含氮层的流动沉积后减少蚀刻速率的处理
公开(公告)号：US20130217241A1
公开(公告)日：2013-08-22
申请号：US13590702
申请日：2012-08-21
申请人： Brian S. Underwood , Linlin Wang , Sanjay Kamath , Abhijit Basu Mallick , Nitin K. Ingle
发明人： Brian S. Underwood , Linlin Wang , Sanjay Kamath , Abhijit Basu Mallick , Nitin K. Ingle
IPC分类号： H01L21/02
CPC分类号： H01L21/02274 , H01L21/02126 , H01L21/02167 , H01L21/02208 , H01L21/02216 , H01L21/02222 , H01L21/02271 , H01L21/02318 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/31111
摘要： Methods are described for forming and curing a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon and carbon containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition chamber temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is treated to remove components which enabled the flowability, but are no longer needed after deposition. Removal of the components increases etch resistance in order to allow the gapfill silicon-carbon-and-nitrogen-containing layer to remain intact during subsequent processing. The treatments have been found to decrease the evolution of properties of the film upon exposure to atmosphere.
摘要翻译：描述了用于在半导体衬底上形成和固化可流动的含硅 - 碳和氮的层的方法。硅和碳组分可以来自含硅和碳的前体，而氮可以来自已经被活化的氮含量的前驱物，以加速氮与含较低沉积室的含硅和碳的前体的反应温度。处理初始可流动的含硅碳和氮的层以去除能够流动的组分，但在沉积后不再需要。组分的去除增加了耐蚀刻性，以便允许间隙填充硅 - 碳 - 和含氮层在后续处理过程中保持完整。已经发现这些处理降低了暴露于大气中的膜的性质的演变。

9. 发明授权

US07967913B2 Remote plasma clean process with cycled high and low pressure clean steps 失效
标题翻译：远程等离子清洁工艺，循环高低压清洁步骤
公开(公告)号：US07967913B2
公开(公告)日：2011-06-28
申请号：US12508381
申请日：2009-07-23
申请人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
发明人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
IPC分类号： B08B6/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
摘要翻译：一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

10. 发明授权

US07704897B2 HDP-CVD SiON films for gap-fill 失效
标题翻译：用于间隙填充的HDP-CVD SiON膜
公开(公告)号：US07704897B2
公开(公告)日：2010-04-27
申请号：US12035603
申请日：2008-02-22
申请人： Hemant P. Mungekar , Young S. Lee , Agnieszka Jakubowicz , Zhong Qiang Hua , Rionard Purnawan , Sanjay Kamath , Walter Zygmunt
发明人： Hemant P. Mungekar , Young S. Lee , Agnieszka Jakubowicz , Zhong Qiang Hua , Rionard Purnawan , Sanjay Kamath , Walter Zygmunt
IPC分类号： H01L21/316
CPC分类号： C23C16/045 , C23C16/308 , C23C16/507 , H01L21/3145 , H01L27/14627 , H01L27/14629 , Y10T29/41
摘要： The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.
摘要翻译：本发明涉及使用HDP-CVD工艺在衬底上沉积低应力/高折射率多层膜的方法。多层膜包括两个衬里层和大块间隙填充层，并且HDP-CVD工艺在沉积至少第二衬里层期间采用降低的衬底偏置功率。在降低的沉积温度下发生三层沉积，这进一步降低了多层膜的应力。较低的应力导致较少的缺陷率，这提高了膜保持辐射的光学限制的能力。

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