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1. 发明申请

US20090127664A1 GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE FABRICATION METHOD, AND GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE 审中-公开
标题翻译：第III组氮化物半导体晶体生长方法，第III族氮化物半导体晶体基板制造方法和III族氮化物半导体晶体基板
公开(公告)号：US20090127664A1
公开(公告)日：2009-05-21
申请号：US12273179
申请日：2008-11-18
申请人： Takuji OKAHISA , Tomohiro Kawase , Tomoki Uemura , Muneyuki Nishioka , Satoshi Arakawa
发明人： Takuji OKAHISA , Tomohiro Kawase , Tomoki Uemura , Muneyuki Nishioka , Satoshi Arakawa
IPC分类号： H01L31/20 , H01L29/20
CPC分类号： H01L21/02576 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262
摘要： A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a first group III nitride semiconductor crystal doped with silicon by using silicon tetrachloride (SiCl4) gas as doping gas, on the underlying substrate by vapor phase growth. The growth rate of the first group III nitride semiconductor crystal is at least 200 μm/h and not more than 2000 μm/h.
摘要翻译： III族氮化物半导体晶体的生长方法包括以下步骤：制备下面的衬底，并且通过使用四氯化硅（SiCl 4）气体作为掺杂气体来生长掺杂有硅的第一III族氮化物半导体晶体，通过气相生长在下面的衬底上成长。第一III族氮化物半导体晶体的生长速率为至少200μm/ h且不超过2000μm/ h。

2. 发明申请

US20090127663A1 GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE FABRICATION METHOD, AND GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE 审中-公开
标题翻译：第III组氮化物半导体晶体生长方法，第III族氮化物半导体晶体基板制造方法和III族氮化物半导体晶体基板
公开(公告)号：US20090127663A1
公开(公告)日：2009-05-21
申请号：US12273137
申请日：2008-11-18
申请人： Takuji Okahisa , Tomohiro Kawase , Tomoki Uemura , Muneyuki Nishioka , Satoshi Arakawa
发明人： Takuji Okahisa , Tomohiro Kawase , Tomoki Uemura , Muneyuki Nishioka , Satoshi Arakawa
IPC分类号： H01L29/20 , H01L21/322
CPC分类号： H01L21/02576 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262
摘要： A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a group III nitride semiconductor crystal doped with silicon by using silicon tetrafluoride gas as doping gas, on the underlying substrate by vapor phase growth.
摘要翻译： III族氮化物半导体晶体的生长方法包括以下步骤：通过使用四氟化硅气体作为掺杂气体，通过气相生长在底层衬底上生长掺杂有硅的III族氮化物半导体晶体。

3. 发明申请

US20090127662A1 GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
标题翻译： III类氮化物半导体晶体基板和半导体器件
公开(公告)号：US20090127662A1
公开(公告)日：2009-05-21
申请号：US12273101
申请日：2008-11-18
申请人： Takuji Okahisa , Tomohiro Kawase , Tomoki Uemura , Muneyuki Nishioka , Satoshi Arakawa
发明人： Takuji Okahisa , Tomohiro Kawase , Tomoki Uemura , Muneyuki Nishioka , Satoshi Arakawa
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C30B25/02 , C30B29/403
摘要： A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10−4 Ω·m and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.
摘要翻译： III族氮化物半导体晶体基板的直径为至少25mm且不大于160mm。 III族氮化物半导体晶体衬底的电阻率至少为1×10 -4Ω·cm且不大于0.1Ω·cm。 III族氮化物半导体晶体的直径方向的电阻率分布为-30％以上且30％以下。 III族氮化物半导体晶体的厚度方向的电阻率分布为〜16％以上且16％以下。

4. 发明授权

US08698282B2 Group III nitride semiconductor crystal substrate and semiconductor device 有权
标题翻译： III族氮化物半导体晶体基板和半导体器件
公开(公告)号：US08698282B2
公开(公告)日：2014-04-15
申请号：US12273101
申请日：2008-11-18
申请人： Takuji Okahisa , Tomohiro Kawase , Tomoki Uemura , Muneyuki Nishioka , Satoshi Arakawa
发明人： Takuji Okahisa , Tomohiro Kawase , Tomoki Uemura , Muneyuki Nishioka , Satoshi Arakawa
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C30B25/02 , C30B29/403
摘要： A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10−4 Ω·cm and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.
摘要翻译： III族氮化物半导体晶体基板的直径为至少25mm且不大于160mm。 III族氮化物半导体晶体基板的电阻率至少为1×10-4＆OHgr·cm，不大于0.1＆OHgr·cm。 III族氮化物半导体晶体的直径方向的电阻率分布为-30％以上且30％以下。 III族氮化物半导体晶体的厚度方向的电阻率分布为〜16％以上且16％以下。

5. 发明申请

US20100164070A1 Group III Nitride Semiconductor Crystal Substrate and Semiconductor Device 审中-公开
标题翻译： III族氮化物半导体晶体基板和半导体器件
公开(公告)号：US20100164070A1
公开(公告)日：2010-07-01
申请号：US12719719
申请日：2010-03-08
申请人： Takuji OKAHISA , Tomohiro Kawase , Tomoki Uemura , Muneyuki Nishioka , Satoshi Arakawa
发明人： Takuji OKAHISA , Tomohiro Kawase , Tomoki Uemura , Muneyuki Nishioka , Satoshi Arakawa
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C30B25/02 , C30B29/403
摘要： A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10−4 Ω·cm and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.
摘要翻译： III族氮化物半导体晶体基板的直径为至少25mm且不大于160mm。 III族氮化物半导体晶体基板的电阻率至少为1×10-4＆OHgr·cm，不大于0.1＆OHgr·cm。 III族氮化物半导体晶体的直径方向的电阻率分布为-30％以上且30％以下。 III族氮化物半导体晶体的厚度方向的电阻率分布为〜16％以上且16％以下。

6. 发明申请

US20110110840A1 METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRIDE CRYSTAL 审中-公开
标题翻译：生产III族氮化物晶体和III族氮化物晶体的方法
公开(公告)号：US20110110840A1
公开(公告)日：2011-05-12
申请号：US13054373
申请日：2009-06-26
申请人： Michimasa Miyanaga , Naho Mizuhara , Keisuke Tanizaki , Issei Satoh , Hideaki Nakahata , Satoshi Arakawa , Yoshiyuki Yamamoto , Takashi Sakurada
发明人： Michimasa Miyanaga , Naho Mizuhara , Keisuke Tanizaki , Issei Satoh , Hideaki Nakahata , Satoshi Arakawa , Yoshiyuki Yamamoto , Takashi Sakurada
IPC分类号： C30B29/40 , C30B23/02 , C30B23/06 , C01B21/06
CPC分类号： C30B29/403 , C30B23/025 , C30B25/18
摘要： A method for producing a group III-nitride crystal having a large thickness and high quality and a group III-nitride crystal are provided. A method for producing a group III-nitride crystal 13 includes the following steps: A underlying substrate 11 having a major surface 11a tilted toward the direction with respect to the (0001) plane is prepared. The group III-nitride crystal 13 is grown by vapor-phase epitaxy on the major surface 11a of the underlying substrate 11. The major surface 11a of the underlying substrate 11 is preferably a plane tilted at an angle of −5° to 5° from the {01-10} plane.
摘要翻译：提供了具有大厚度和高质量的III族氮化物晶体和III族氮化物晶体的制造方法。制备III族氮化物晶体13的方法包括以下步骤：制备具有相对于（0001）面朝向<1-100>方向倾斜的主表面11a的下面的基底11。 III族氮化物晶体13通过在下面的基底11的主表面11a上的气相外延生长。下面的基底11的主表面11a优选是以-5°至5°的角度倾斜的平面 {01-10}飞机。

7. 发明申请

US20100120231A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20100120231A1
公开(公告)日：2010-05-13
申请号：US12529073
申请日：2009-02-12
申请人： Hiroyuki Kitabayashi , Koji Katayama , Satoshi Arakawa
发明人： Hiroyuki Kitabayashi , Koji Katayama , Satoshi Arakawa
IPC分类号： H01L21/20 , H01L21/28
CPC分类号： H01L21/3081 , H01S5/0425 , H01S5/2086
摘要： A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S10) of forming a GaN-based semiconductor layer, a step (S20) of forming an Al film on the GaN-based semiconductor layer, a step (S30, S40) of forming a mask layer composed of a material having a lower etching rate than that of the material constituting the Al film, a step (S50) of partially removing the Al film and the GaN-based semiconductor layer using the mask layer as a mask to form a ridge portion, a step (S60) of retracting the positions of the side walls at the ends of the Al film from the positions of the side walls of the mask layer, a step (S70) of forming a protection film composed of a material having a lower etching rate than that of the material constituting the Al film on the side surfaces of the ridge portion and on the upper surface of the mask layer, and a step (S80) of removing the Al film to remove the mask layer and the protection film formed on the upper surface of the mask layer.
摘要翻译：根据本发明的制造半导体器件的方法包括以下步骤：形成GaN基半导体层的步骤（S10），在GaN基半导体层上形成Al膜的步骤（S20），形成由具有比构成Al膜的材料的蚀刻速率低的材料构成的掩模层的步骤（S30，S40）;使用该步骤（S50）部分地除去Al膜和GaN基半导体层掩模层作为掩模以形成脊部;步骤（S60），从掩模层的侧壁的位置缩回Al膜的端部处的侧壁的位置，形成步骤（S70）由掩模层的侧表面和掩模层的上表面上的蚀刻速率低于构成Al膜的材料的蚀刻速率低的材料形成的保护膜，以及除去Al膜的步骤（S80）以去除掩模层和形成的保护膜 n掩模层的上表面。

8. 发明申请

US20080232553A1 RADIOLOGICAL IMAGING APPARATUS, RADIOLOGICAL IMAGING METHOD, AND PROGRAM 有权
标题翻译：放射成像装置，放射成像方法和程序
公开(公告)号：US20080232553A1
公开(公告)日：2008-09-25
申请号：US12045383
申请日：2008-03-10
申请人： Toshitaka Agano , Satoshi Arakawa , Atsushi Fukuda
发明人： Toshitaka Agano , Satoshi Arakawa , Atsushi Fukuda
IPC分类号： H05G1/02
CPC分类号： A61B6/587 , A61B6/4429 , A61B6/547
摘要： A radiological imaging apparatus is provided that includes a radiation source, a radiation detection section that detects radiation that passes through a subject, a signal detection section that detects signals from a plurality of signal generating sections disposed on the radiation detection section in a manner such that each signal generating section is in a different location, a signal comparison section that compares the signals detected by the signal detection section, a positional relationship judgment section that makes a judgment as to whether a positional relationship between the radiation detection section and the radiation source is a predetermined positional relationship based on a comparison result, a position control section that controls a position of at least one of the radiation source and the radiation detection section to maintain the positional relationship as the predetermined positional relationship based on a judgment result, a position control holding section that holds the radiation source and the radiation detection section in the position set by the position control section after the positional relationship is set to the prescribed positional relationship, and a notification section that provides notification in a case where the positional relationship judgment section makes a judgment that the positional relationship is not the prescribed positional relationship during holding.
摘要翻译：提供了一种放射线成像装置，其包括：辐射源，检测通过对象的辐射的放射线检测部;信号检测部，其以设置在所述放射线检测部上的多个信号生成部检测信号，每个信号产生部分在不同的位置，信号比较部分，其对由信号检测部分检测的信号进行比较;位置关系判断部分，判断辐射检测部分和辐射源之间的位置关系是否为基于比较结果的预定位置关系;位置控制部分，其基于判断结果控制所述辐射源和所述辐射检测部分中的至少一个的位置，以将所述位置关系保持为所述预定位置关系;位置控制部持有部分在将所述位置关系设定为所述规定的位置关系之后，将所述位置控制部所设定的位置处的所述辐射源和所述放射线检测部保持在所述位置关系判断部进行判断的情况下提供通知的通知部位置关系在保持期间不是规定的位置关系。

9. 发明申请

US20060243933A1 Method and apparatus for recording and reading out radiation images 失效
公开(公告)号：US20060243933A1
公开(公告)日：2006-11-02
申请号：US11477586
申请日：2006-06-30
申请人： Satoshi Arakawa
发明人： Satoshi Arakawa
IPC分类号： G03B42/08
CPC分类号： G03B42/08
摘要： One surface of a stimulable phosphor sheet supported at a position for image recording is exposed to radiation, and a radiation image is stored on the stimulable phosphor sheet. Image readout is performed from the side of the other surface of the stimulable phosphor sheet supported at the position for image recording. Energy remaining on the stimulable phosphor sheet is then released by irradiating erasing light to an entire area of the stimulable phosphor sheet with a sheet-shaped erasing light source, which has uniform transmissivity to radiation and is located close to the one surface of the stimulable phosphor sheet supported at the position for image recording.

10. 发明申请

US20060151728A1 Radiation image signal acquiring method 失效
标题翻译：辐射图像信号采集方法
公开(公告)号：US20060151728A1
公开(公告)日：2006-07-13
申请号：US11324296
申请日：2006-01-04
申请人： Satoshi Arakawa
发明人： Satoshi Arakawa
IPC分类号： G03B42/08
CPC分类号： G03B42/08
摘要： A stimulable phosphor sheet, on which a radiation image of an object has been stored, is scanned with stimulating rays, which cause the stimulable phosphor sheet to emit light in proportion to the amount of energy stored on the stimulable phosphor sheet during exposure of the stimulable phosphor sheet to radiation. The light, which is emitted by the stimulable phosphor sheet when the stimulable phosphor sheet is scanned with the stimulating rays, is detected, and an image signal representing the radiation image of the object is acquired. The scanning of the stimulable phosphor sheet with the stimulating rays is performed from an object image-carrying edge area, in which a radiation image pattern representing the object has been stored, the object image-carrying edge area being one of edge areas of the stimulable phosphor sheet.
摘要翻译：用刺激光线扫描其上已经存储有物体的放射线图像的可刺激的荧光粉片，其使得可刺激的荧光体片材在暴露于可刺激的荧光体片材期间与存储在可刺激的磷光体片材上的能量的量成比例地发光荧光片照射。检测可刺激的荧光体片用刺激光线扫描时由可刺激的荧光体片发射的光，并且获取表示物体的辐射图像的图像信号。通过刺激光线对可刺激的荧光体片材的扫描是从存储有表示物体的放射线图像图案的物体图像携带边缘区域进行的，物体图像载体边缘区域是可刺激的边缘区域之一荧光粉片。

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