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1. 发明申请

WO2009052453A2 PLASMA DOPING SYSTEM WITH CHARGE CONTROL 审中-公开
标题翻译：带充电控制的等离子体掺杂系统
公开(公告)号：WO2009052453A2
公开(公告)日：2009-04-23
申请号：PCT/US2008080400
申请日：2008-10-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , JEON YONGBAE , SINGH VIKRAM , MILLER TIMOTHY J , FANG ZIWEI , WALTHER STEVEN R , GUPTA ATUL
发明人： JEON YONGBAE , SINGH VIKRAM , MILLER TIMOTHY J , FANG ZIWEI , WALTHER STEVEN R , GUPTA ATUL
IPC分类号： H01L21/22 , C23C14/00 , C23C16/00 , H01J37/32 , H01L21/26
CPC分类号： H01J37/32642 , H01J37/32412 , H01J37/32935
摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.
摘要翻译：等离子体掺杂的方法包括在等离子体室中产生包括支撑衬底的台板附近的掺杂剂离子的等离子体。台板被偏压为具有负电位的偏压电压波形，该偏压电压波形吸引等离子体中的离子到等离子体掺杂的基板。监测至少一个传感器测量与有利于形成放电的充电条件有关的数据。响应于所测量的数据修改至少一个等离子体工艺参数，从而降低形成放电的可能性。

2. 发明申请

WO2006002138A3 ETCH AND DEPOSITION CONTROL FOR PLASMA IMPLANTATION 审中-公开
标题翻译：等离子体植入的蚀刻和沉积控制
公开(公告)号：WO2006002138A3
公开(公告)日：2006-04-06
申请号：PCT/US2005021883
申请日：2005-06-21
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , SINGH VIKRAM , PERSING HAROLD , MILLER TIMOTHY , GUPTA ATUL , FANG ZIWEI
发明人： SINGH VIKRAM , PERSING HAROLD , MILLER TIMOTHY , GUPTA ATUL , FANG ZIWEI
IPC分类号： H01L21/223 , C03C15/00 , C23C14/00
CPC分类号： H01L21/2236 , H01J37/32412
摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surfacemodifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.
摘要翻译：用于离子植入衬底的方法包括从包括至少一种植入物种的至少一种植入材料形成等离子体，将所述至少一种植入物种植入到所述基底的表面中，以及将所述表面的至少一种表面改性物质引导至减少与等离子体相关的表面损伤。用于离子注入的装置被配置为实现该方法。

3. 发明申请

WO2005114692A3 In-situ process chamber preperation methods for plasma ion implantation systems 审中-公开
标题翻译：等离子体离子注入系统的原位处理室预处理方法
公开(公告)号：WO2005114692A3
公开(公告)日：2006-03-02
申请号：PCT/US2005017699
申请日：2005-05-19
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , SINGH VIKRAM , GUPTA ATUL , PERSING HAROLD M , WALTHER STEVEN R , TESTONI ANNE L
发明人： SINGH VIKRAM , GUPTA ATUL , PERSING HAROLD M , WALTHER STEVEN R , TESTONI ANNE L
IPC分类号： H01J37/32
CPC分类号： H01J37/32495 , H01J37/32412
摘要： A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate, depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate, before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors, plasma ion implantation of the substrate according to a plasma ion implantation process, and repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.

4. 发明申请

WO2005114692A9 IN-SITU PROCESS CHAMBER PREPARATION METHODS FOR PLASMA ION IMPLANTATION SYSTEMS 审中-公开
标题翻译：等离子体植入系统的现场过程室制备方法
公开(公告)号：WO2005114692A9
公开(公告)日：2006-01-19
申请号：PCT/US2005017699
申请日：2005-05-19
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , SINGH VIKRAM , GUPTA ATUL , PERSING HAROLD M , WALTHER STEVEN R , TESTONI ANNE L
发明人： SINGH VIKRAM , GUPTA ATUL , PERSING HAROLD M , WALTHER STEVEN R , TESTONI ANNE L
IPC分类号： H01J37/32
CPC分类号： H01J37/32495 , H01J37/32412
摘要： A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate, depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate, before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors, plasma ion implantation of the substrate according to a plasma ion implantation process, and repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.
摘要翻译：用于等离子体离子注入衬底的方法包括提供等离子体离子注入系统，其包括处理室，用于在处理室中产生等离子体的源，用于将衬底保持在处理室中的压板和用于加速离子的电压源从等离子体进入衬底，在沉积新鲜涂层之前，在沉积新鲜涂层之前，在处理室的内表面上沉积与组合物中与等离子体离子注入导致的沉积膜相似的新涂层，清洁处理室的内表面通过使用一种或多种激活的清洁前体去除旧膜，根据等离子体离子注入工艺等离子体离子注入基板，并重复清洁处理室的内表面并在等离子体离子注入之后沉积新涂层的步骤或更多的基材。

5. 发明申请

WO2007109252A3 METHOD OF PLASMA PROCESSING WITH IN-SITU MONITORING AND PROCESS PARAMETER TUNING 审中-公开
标题翻译：用现场监测和过程参数调谐进行等离子体处理的方法
公开(公告)号：WO2007109252A3
公开(公告)日：2008-04-17
申请号：PCT/US2007006879
申请日：2007-03-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , RENAU ANTHONY , SINGH VIKRAM , GUPTA ATUL , MILLER TIMOTHY , AREVALO EDWIN , PAPASOULIOTIS GEORGE , JEON YONG BAE
发明人： RENAU ANTHONY , SINGH VIKRAM , GUPTA ATUL , MILLER TIMOTHY , AREVALO EDWIN , PAPASOULIOTIS GEORGE , JEON YONG BAE
IPC分类号： H01L21/66
CPC分类号： H01J37/32935 , H01J37/32412 , H01J37/3299 , H01L22/20
摘要： A method of selecting plasma doping process parameters includes determining a recipe parameter database for achieving at least one plasma doping condition. The initial recipe parameters are determined from the recipe parameter database. In-situ measurements of at least one plasma doping condition are performed. The in-situ measurements of the at least one plasma doping condition are correlated to at least one plasma doping result. At least one recipe parameter is changed in response to the correlation so as to improve at least one plasma doping process performance metric.
摘要翻译：选择等离子体掺杂工艺参数的方法包括确定用于实现至少一种等离子体掺杂条件的配方参数数据库。从配方参数数据库确定初始配方参数。进行至少一个等离子体掺杂条件的原位测量。至少一种等离子体掺杂条件的原位测量与至少一种等离子体掺杂结果相关。响应于相关性改变至少一个配方参数，以便改进至少一个等离子体掺杂工艺性能度量。

6. 发明申请

WO2011126772A2 CONTINUOUSLY OPTIMIZED SOLAR CELL METALLIZATION DESIGN THROUGH FEED-FORWARD PROCESS 审中-公开
标题翻译：通过进给前进过程连续优化的太阳能电池金属化设计
公开(公告)号：WO2011126772A2
公开(公告)日：2011-10-13
申请号：PCT/US2011030021
申请日：2011-03-25
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , RIORDON BENJAMIN B , LOW RUSSELL J , GUPTA ATUL , WEAVER WILLIAM T
发明人： RIORDON BENJAMIN B , LOW RUSSELL J , GUPTA ATUL , WEAVER WILLIAM T
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , H01L21/266 , H01L31/022433 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks, After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created and imaging is used to determine the appropriate metallization layer.
摘要翻译：公开了一种改进的，低成本的处理衬底的方法，例如制造太阳能电池。使用掩模或不使用光刻或掩模在衬底上产生掺杂区域。在植入完成之后，使用视觉识别来确定植入的准确区域。然后可以通过随后的工艺步骤来使用该信息来对合适的金属化层进行包装并提供对准信息。这些技术也可用于其他离子注入机应用。在另一方面，产生点图案选择性发射体，并且使用成像来确定合适的金属化层。

7. 发明申请

WO2009111666A3 COUNTERDOPING FOR SOLAR CELLS 审中-公开
标题翻译：对太阳能电池的反制
公开(公告)号：WO2009111666A3
公开(公告)日：2009-12-10
申请号：PCT/US2009036235
申请日：2009-03-05
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , BATEMAN NICHOLAS P T , SULLIVAN PAUL , GUPTA ATUL
发明人： BATEMAN NICHOLAS P T , SULLIVAN PAUL , GUPTA ATUL
IPC分类号： H01L31/042 , H01L21/265
CPC分类号： H01L31/022441 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Methods of counterdoping a solar cell, particularly an IBC solar cell are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p- doped. Traditionally, a plurality of lithography and doping steps are required to achieve this desired configuration. In contrast, one lithography step can be eliminated by the use of a blanket doping of one conductivity and a mask patterned counterdoping process of the opposite conductivity. The areas dosed during the masked patterned doping receive a sufficient dose so as to completely reverse the effect of the blanket doping and achieve a conductivity that is opposite the blanket doping. In another embodiment, the counterdoping is performed by means of a direct patterning technique, thereby eliminating the remaining lithography step. Various methods of direct counterdoping processes are disclosed.
摘要翻译：公开了反掺杂太阳能电池特别是IBC太阳能电池的方法。太阳能电池的一个表面可能需要部分是n掺杂的，而其他部分是p掺杂的。传统上，需要多个光刻和掺杂步骤来实现这种期望的配置。相反，通过使用一种导电性的全面掺杂和相反导电性的掩模图案反掺杂工艺，可以消除一个光刻步骤。在掩模图案化掺杂期间定量的区域接收足够的剂量以完全反转覆盖掺杂的效果并实现与覆盖掺杂相反的导电性。在另一个实施例中，借助于直接图案化技术来执行反掺杂，由此消除剩余的光刻步骤。公开了直接反掺杂工艺的各种方法。

8. 发明申请

WO2009111668A3 USE OF DOPANTS WITH DIFFERENT DIFFUSIVITIES FOR SOLAR CELL MANUFACTURE 审中-公开
标题翻译：用于太阳能电池制造的不同扩散剂的使用
公开(公告)号：WO2009111668A3
公开(公告)日：2009-11-12
申请号：PCT/US2009036238
申请日：2009-03-05
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , BATEMAN NICHOLAS P T , GUPTA ATUL , HATEM CHRISTOPHER R , RAMAPPA DEEPAK
发明人： BATEMAN NICHOLAS P T , GUPTA ATUL , HATEM CHRISTOPHER R , RAMAPPA DEEPAK
IPC分类号： H01L31/042 , H01L21/265
CPC分类号： H01L33/025 , H01L21/26513 , H01L31/022441 , H01L31/0236 , H01L31/03529 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.
摘要翻译：公开了通过利用两种不同掺杂剂来调整衬底的掺杂剂分布的方法，每种掺杂剂具有不同的扩散率。衬底可以是例如太阳能电池。通过引入两种不同的掺杂剂，例如通过离子注入，炉扩散或糊状物，可以产生所需的掺杂剂分布。此外，掺杂剂可以同时，部分同时或顺序地引入。掺杂剂对优选由一种较轻的物质和一种较重的物质组成，其中较轻的物质具有较大的扩散系数。例如，可以使用诸如硼和镓，硼和铟，磷和砷的掺杂物对，以及磷和锑。

9. 发明申请

WO2009102875A3 APPARATUS FOR MEASURING BEAM CHARACTERISTICS AND A METHOD THEREOF 审中-公开
标题翻译：用于测量光束特性的装置及其方法
公开(公告)号：WO2009102875A3
公开(公告)日：2009-11-05
申请号：PCT/US2009033933
申请日：2009-02-12
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , OLSON JOSEPH C , GUPTA ATUL
发明人： OLSON JOSEPH C , GUPTA ATUL
IPC分类号： H01L21/265 , H01L21/66
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/2446 , H01J2237/24507 , H01J2237/24528 , H01J2237/24542
摘要： An apparatus and a method for detecting particle beam characteristics are disclosed. In one embodiment, the apparatus may have a body including a first end and second end and at least one detector between the first and second ends. The apparatus may have a transparent state where a portion of the particles entering the apparatus may pass through the apparatus. The apparatus may also have a minimum transparency state where substantially all of the particles entering the apparatus may be prevented from passing through the apparatus and detected. Different transparency state may be achieved by rotating the apparatus or the detector contained therein. With the apparatus, it is possible to detect the beam properties such as the beam intensity, angle, parallelism, and a distribution of the particles in a particle beam.
摘要翻译：公开了一种用于检测粒子束特性的装置和方法。在一个实施例中，设备可以具有包括第一端和第二端的主体以及在第一端和第二端之间的至少一个检测器。该设备可以具有透明状态，其中进入设备的一部分颗粒可以通过设备。该装置还可以具有最小的透明度状态，其中可以防止进入装置的基本上所有的颗粒通过装置并被检测。可以通过旋转装置或其中包含的检测器来实现不同的透明度状态。利用该装置，可以检测诸如光束强度，角度，平行度以及颗粒束中颗粒分布的光束特性。

10. 发明申请

WO2009111667A8 ESTABLISHING A HIGH PHOSPHORUS CONCENTRATION IN SOLAR CELLS 审中-公开
标题翻译：建立太阳能电池中的高磷浓度
公开(公告)号：WO2009111667A8
公开(公告)日：2010-11-04
申请号：PCT/US2009036236
申请日：2009-03-05
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , BATEMAN NICHOLAS P T , GUPTA ATUL , HATEM CHRISTOPHER R , PAPASOULIOTIS GEORGE D , MAYNARD HELEN L
发明人： BATEMAN NICHOLAS P T , GUPTA ATUL , HATEM CHRISTOPHER R , PAPASOULIOTIS GEORGE D , MAYNARD HELEN L
IPC分类号： H01L31/042 , H01L21/265
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , Y02E10/547 , Y02P70/521
摘要： Methods of controlling the diffusion of a dopant in a solar cell are disclosed. A second species is used in conjunction with the dopant to modify the diffusion region. For example, phosphorus and boron both diffuse by pairing with interstitial silicon atoms. Thus, by controlling the creation and location of these interstitials, the diffusion rate of the dopant can be controlled. In one embodiment, a heavier element, such as germanium, argon or silicon, is used to create interstitials. Because of the presence of these heavier elements, the dopant diffuses deeper into the substrate. In another embodiment, carbon is implanted. Carbon reduces the number of interstitials, and thus can be used to limit the diffusion of the dopant. In another embodiment, a lighter element, such as helium is used to amorphize the substrate. The crystalline-amorphous interface created limits diffusion of the dopant into the substrate.
摘要翻译：公开了控制太阳能电池中掺杂剂扩散的方法。第二种与掺杂剂结合使用以改变扩散区。例如，磷和硼通过与间隙硅原子配对而扩散。因此，通过控制这些间隙的产生和位置，可以控制掺杂剂的扩散速率。在一个实施例中，使用较重的元素，例如锗，氩或硅，以产生间隙。由于这些较重的元素的存在，掺杂剂扩散到衬底中。在另一个实施方案中，植入碳。碳减少了间隙的数量，因此可用于限制掺杂剂的扩散。在另一个实施方案中，使用诸如氦的较轻元素使基底无定形。产生的晶体 - 非晶界面限制了掺杂剂到衬底中的扩散。

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