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1. 发明申请

WO2008020955A2 TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION 审中-公开
标题翻译：温度控制离子植入技术
公开(公告)号：WO2008020955A2
公开(公告)日：2008-02-21
申请号：PCT/US2007/016460
申请日：2007-07-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , ENGLAND, Jonathan, Gerald , MUKA, Richard, S. , AREVALO, Edwin, A. , FANG, Ziwei , SINGH, Vikram
发明人： ENGLAND, Jonathan, Gerald , MUKA, Richard, S. , AREVALO, Edwin, A. , FANG, Ziwei , SINGH, Vikram
CPC分类号： H01L21/67115 , H01J37/20 , H01J2237/2001 , H01J2237/31701 , H01J2237/336 , H01L21/67063 , H01L21/67069 , H01L21/67109 , H01L21/67213 , H01L21/6831
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature- controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and ' to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post- cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre -heated platen and to remove the wafer from the platen to the post -cooling station.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，技术可以被实现为用于温度控制的离子注入的装置。该设备可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板包括：晶片夹紧机构，用于将晶片固定到压板上并且在晶片和压板之间提供预定的热接触以及一个或多个加热元件以预热并将压板保持在高于室温的预定温度范围内。该设备还可以包括后冷却站，以在离子注入之后冷却晶片。该装置还可以包括晶片处理组件，以将晶片装载到预加热的压板上并将晶片从压板移除到后冷却站。

2. 发明申请

WO2005115104A3 METHODS FOR STABLE AND REPEATABLE PLASMA ION IMPLANTATION 审中-公开
标题翻译：用于稳定和可重复等离子体植入的方法
公开(公告)号：WO2005115104A3
公开(公告)日：2006-07-06
申请号：PCT/US2005016219
申请日：2005-05-09
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , WALTHER STEVEN R , FANG ZIWEI , TOCCO JUSTIN , ELLIS CARLETON F III
发明人： WALTHER STEVEN R , FANG ZIWEI , TOCCO JUSTIN , ELLIS CARLETON F III
IPC分类号： H01J37/32 , C23C14/48 , H01L21/223 , H01L21/26 , H01L21/42
CPC分类号： H01J37/32412 , C23C14/48 , H01L21/2236
摘要： A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber (10), a source for producing a plasma (40) in the process chamber, a platen (14) for holding a substrate (20) in the process chamber, an anode (24) spaced from the platen, and a pulse source (30) for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, a parameter of an implant process is varied to at least partially compensate for undesired effects of interaction between ions being implanted and the substrate. For example, dose rate, ion energy, or both may be varied during the implant process. In another aspect, a pretreatment step includes accelerating ions from the plasma to the anode to cause emission of secondary electrons from the anode, and accelerating the secondary electrons from the anode to a substrate for pretreatment of the substrate.
摘要翻译：一种用于等离子体离子注入衬底的方法包括：提供等离子体离子注入系统，其具有处理室（10），用于在处理室中产生等离子体（40）的源，用于保持衬底（20）的压板（14）在处理室中，与压板间隔开的阳极（24）和用于产生用于将离子从等离子体加速到衬底中的注入脉冲的脉冲源（30）。在一个方面，改变植入过程的参数以至少部分地补偿被植入的离子与衬底之间的相互作用的不期望的影响。例如，剂量率，离子能量或两者可以在植入过程期间变化。在另一方面，预处理步骤包括将离子从等离子体加速到阳极，以引起来自阳极的二次电子的发射，以及将二次电子从阳极加速到衬底以预处理衬底。

3. 发明申请

WO2009045736A1 CHARGE NEUTRALIZATION IN A PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理装置中的充电中和
公开(公告)号：WO2009045736A1
公开(公告)日：2009-04-09
申请号：PCT/US2008/076799
申请日：2008-09-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , GODET, Ludovic , RADOVANOV, Svetlana , PAPASOULIOTIS, George, D. , RAJ, Deven, M. , SINGH, Vikram , MILLER, Timothy, J. , FANG, Ziwei
发明人： GODET, Ludovic , RADOVANOV, Svetlana , PAPASOULIOTIS, George, D. , RAJ, Deven, M. , SINGH, Vikram , MILLER, Timothy, J. , FANG, Ziwei
IPC分类号： H01L21/3065 , H01L21/205
CPC分类号： H01J37/32706 , H01J37/32623 , H01J37/32935
摘要： A plasma processing apparatus includes a process chamber, a source configured to generate a plasma in the process chamber, and a platen configured to support a workpiece in the process chamber. The platen is biased with a pulsed platen signal having pulse ON and OFF time periods to accelerate ions from the plasma towards the workpiece during the pulse ON time periods and not the pulse OFF time periods. A plate is positioned in the process chamber. The plate is biased with a plate signal to accelerate ions from the plasma towards the plate to cause an emission of secondary electrons from the plate during at least a portion of one of the pulse OFF time periods of the pulsed platen signal to at least partially neutralize charge accumulation on the workpiece.
摘要翻译：等离子体处理设备包括处理室，被配置为在处理室中产生等离子体的源和被配置为在处理室中支撑工件的压板。压板由具有脉冲ON和OFF时间段的脉冲压板信号偏置，以在脉冲接通时间段期间将离子从等离子体加速到工件，而不是脉冲关闭时间周期。板位于处理室中。板被板信号偏置，以将离子从等离子体加速到板，以在脉冲压板信号的脉冲关闭时间周期的至少一部分的至少一部分期间引起来自板的二次电子的发射，以至少部分中和电荷积累在工件上。

4. 发明申请

WO2007106449A3 TECHNIQUE FOR MONITORING AND CONTROLLING A PLASMA PROCESS 审中-公开
公开(公告)号：WO2007106449A3
公开(公告)日：2007-09-20
申请号：PCT/US2007/006244
申请日：2007-03-09
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , KOO, Bon-Woong , GODET, Ludovic , VOURLOUMIS, Vassilis, Panayotis , SINGH, Vikram , FANG, Ziwei , LINDSAY, Bernard, G.
发明人： KOO, Bon-Woong , GODET, Ludovic , VOURLOUMIS, Vassilis, Panayotis , SINGH, Vikram , FANG, Ziwei , LINDSAY, Bernard, G.
IPC分类号： H01J37/32 , H01J49/40
摘要： A time-of-f light ion sensor (100) for monitoring ion species in a plasma includes a housing (102). A drift tube (104) is positioned in the housing. An extractor electrode (106) is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes (108,110) is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is baised so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector (112) is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.

5. 发明申请

WO2006002138A3 ETCH AND DEPOSITION CONTROL FOR PLASMA IMPLANTATION 审中-公开
标题翻译：等离子体植入的蚀刻和沉积控制
公开(公告)号：WO2006002138A3
公开(公告)日：2006-04-06
申请号：PCT/US2005021883
申请日：2005-06-21
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , SINGH VIKRAM , PERSING HAROLD , MILLER TIMOTHY , GUPTA ATUL , FANG ZIWEI
发明人： SINGH VIKRAM , PERSING HAROLD , MILLER TIMOTHY , GUPTA ATUL , FANG ZIWEI
IPC分类号： H01L21/223 , C03C15/00 , C23C14/00
CPC分类号： H01L21/2236 , H01J37/32412
摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surfacemodifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.
摘要翻译：用于离子植入衬底的方法包括从包括至少一种植入物种的至少一种植入材料形成等离子体，将所述至少一种植入物种植入到所述基底的表面中，以及将所述表面的至少一种表面改性物质引导至减少与等离子体相关的表面损伤。用于离子注入的装置被配置为实现该方法。

6. 发明申请

WO2009052453A2 PLASMA DOPING SYSTEM WITH CHARGE CONTROL 审中-公开
标题翻译：带充电控制的等离子体掺杂系统
公开(公告)号：WO2009052453A2
公开(公告)日：2009-04-23
申请号：PCT/US2008080400
申请日：2008-10-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , JEON YONGBAE , SINGH VIKRAM , MILLER TIMOTHY J , FANG ZIWEI , WALTHER STEVEN R , GUPTA ATUL
发明人： JEON YONGBAE , SINGH VIKRAM , MILLER TIMOTHY J , FANG ZIWEI , WALTHER STEVEN R , GUPTA ATUL
IPC分类号： H01L21/22 , C23C14/00 , C23C16/00 , H01J37/32 , H01L21/26
CPC分类号： H01J37/32642 , H01J37/32412 , H01J37/32935
摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.
摘要翻译：等离子体掺杂的方法包括在等离子体室中产生包括支撑衬底的台板附近的掺杂剂离子的等离子体。台板被偏压为具有负电位的偏压电压波形，该偏压电压波形吸引等离子体中的离子到等离子体掺杂的基板。监测至少一个传感器测量与有利于形成放电的充电条件有关的数据。响应于所测量的数据修改至少一个等离子体工艺参数，从而降低形成放电的可能性。

7. 发明申请

WO2008020955A3 TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION 审中-公开
标题翻译：温度控制离子植入技术
公开(公告)号：WO2008020955A3
公开(公告)日：2008-06-19
申请号：PCT/US2007016460
申请日：2007-07-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , ENGLAND JONATHAN GERALD , MUKA RICHARD S , AREVALO EDWIN A , FANG ZIWEI , SINGH VIKRAM
发明人： ENGLAND JONATHAN GERALD , MUKA RICHARD S , AREVALO EDWIN A , FANG ZIWEI , SINGH VIKRAM
IPC分类号： H01L21/00 , H01L21/68
CPC分类号： H01L21/67115 , H01J37/20 , H01J2237/2001 , H01J2237/31701 , H01J2237/336 , H01L21/67063 , H01L21/67069 , H01L21/67109 , H01L21/67213 , H01L21/6831
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature- controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post -cooling station.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，技术可以被实现为用于温度控制的离子注入的装置。该设备可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板包括：晶片夹持机构，用于将晶片固定到压板上并在晶片和压板之间提供预定的热接触，以及一个或多个加热元件以预热并将压板保持在高于室温的预定温度范围内。该装置还可以包括后冷却站，以在离子注入之后冷却晶片。该装置还可以包括晶片处理组件，以将晶片加载到预热台板上，并将晶片从压板移除到后冷却站。

8. 发明申请

WO2009052453A3 PLASMA DOPING SYSTEM WITH CHARGE CONTROL 审中-公开
公开(公告)号：WO2009052453A3
公开(公告)日：2009-04-23
申请号：PCT/US2008/080400
申请日：2008-10-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , JEON, Yongbae , SINGH, Vikram , MILLER, Timothy, J. , FANG, Ziwei , WALTHER, Steven, R. , GUPTA, Atul
发明人： JEON, Yongbae , SINGH, Vikram , MILLER, Timothy, J. , FANG, Ziwei , WALTHER, Steven, R. , GUPTA, Atul
IPC分类号： H01L21/22 , H01L21/265 , C23C16/00 , C23C14/00 , H01J37/32
摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.

9. 发明申请

WO2007106449A2 TECHNIQUE FOR MONITORING AND CONTROLLING A PLASMA PROCESS 审中-公开
标题翻译：监测和控制等离子体过程的技术
公开(公告)号：WO2007106449A2
公开(公告)日：2007-09-20
申请号：PCT/US2007006244
申请日：2007-03-09
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , KOO BON-WOONG , GODET LUDOVIC , VOURLOUMIS VASSILIS PANAYOTIS , SINGH VIKRAM , FANG ZIWEI , LINDSAY BERNARD G
发明人： KOO BON-WOONG , GODET LUDOVIC , VOURLOUMIS VASSILIS PANAYOTIS , SINGH VIKRAM , FANG ZIWEI , LINDSAY BERNARD G
IPC分类号： H01J37/32 , H01J49/40
CPC分类号： H01J37/32422 , H01J37/32935
摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.
摘要翻译：用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。漂移管定位在壳体中。提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。多个电极位于漂移管的靠近提取器电极的第一端。多个电极被偏压，以使至少一部分吸引的离子进入漂移管并漂移到漂移管的第二端。离子检测器位于漂移管的第二端附近。离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

10. 发明申请

WO2006002138A2 ETCH AND DEPOSITION CONTROL FOR PLASMA IMPLANTATION 审中-公开
标题翻译：等离子体注入的蚀刻和沉积控制
公开(公告)号：WO2006002138A2
公开(公告)日：2006-01-05
申请号：PCT/US2005/021883
申请日：2005-06-21
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , SINGH, Vikram , PERSING, Harold , MILLER, Timothy , GUPTA, Atul , FANG, Ziwei
发明人： SINGH, Vikram , PERSING, Harold , MILLER, Timothy , GUPTA, Atul , FANG, Ziwei
IPC分类号： H01J37/00
CPC分类号： H01L21/2236 , H01J37/32412
摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surfacemodifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.
摘要翻译：一种用于衬底的离子注入的方法包括：从包括至少一种注入物种的至少一种注入材料形成等离子体;将所述至少一种注入物种注入到所述衬底的表面中;以及引导至少一个表面和害羞;在表面修饰物质以减少与等离子体相关的表面损伤。一种用于离子注入的装置被配置为实施该方法。

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