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1. 发明授权

US07033647B2 Method of synthesising carbon nano tubes 失效
标题翻译：碳纳米管合成方法
公开(公告)号：US07033647B2
公开(公告)日：2006-04-25
申请号：US10301317
申请日：2002-11-20
申请人： Xinhe Tang , Klaus Mauthner , Ernst Hammel , Hans Löschner , Elmar Platzgummer , Gerhard Stengl
发明人： Xinhe Tang , Klaus Mauthner , Ernst Hammel , Hans Löschner , Elmar Platzgummer , Gerhard Stengl
IPC分类号： C23C16/26 , C23C16/48 , D01F9/127
CPC分类号： C30B23/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B29/02 , C30B29/605 , C30B33/00 , Y10S427/102
摘要： Method of synthesizing carbon nano tubes (CNTs) on a catalyst layer formed on a support member, by catalytic deposition of carbon from a gaseous phase, whereby an ion beam is used prior to, during, and/or after formation of the carbon nano tubes for modifying the physical, chemical, and/or conductive properties of the carbon nanotubes.
摘要翻译：在形成在支撑体上的催化剂层上合成碳纳米管（CNT）的方法，通过从气相中催化沉积碳，由此在形成碳纳米管之前，期间和/或之后使用离子束用于改变碳纳米管的物理，化学和/或导电性质。

2. 发明授权

US06858118B2 Apparatus for enhancing the lifetime of stencil masks 有权
标题翻译：用于增加模板掩模寿命的装置
公开(公告)号：US06858118B2
公开(公告)日：2005-02-22
申请号：US10395572
申请日：2003-03-24
申请人： Elmar Platzgummer , Hans Löschner , Gerhard Stengl
发明人： Elmar Platzgummer , Hans Löschner , Gerhard Stengl
IPC分类号： C23C14/04 , C23C14/32 , C23C14/34 , C23C14/46 , C23C14/54 , G03F1/00 , H01J37/317 , H01L21/027
CPC分类号： C23C14/547 , B82Y10/00 , B82Y40/00 , G03F1/20 , G03F1/82 , H01J37/3174 , H01J2237/31755 , H01J2237/31788 , H01J2237/31794
摘要： An apparatus for masked ion-beam lithography comprises a mask maintenance module for prolongation of the lifetime of the stencil mask. The module comprises a deposition means for depositing material to the side of the mask irradiated by the lithography beam, with at least one deposition source being positioned in front of the mask, and further comprises a sputter means in which at least one sputter source, positioned in front of the mask holder means and outside the path of the lithography beam, produces a sputter ion beam directed to the mask in order to sputter off material from said mask in a scanning procedure and compensate for inhomogeneity of deposition.
摘要翻译：用于掩模离子束光刻的装置包括用于延长模板掩模寿命的掩模维护模块。该模块包括用于将材料沉积到由光刻光束照射的掩模侧面的沉积装置，其中至少一个沉积源位于掩模的前面，并且还包括溅射装置，其中定位至少一个溅射源在掩模保持器装置的前面并且在光刻光束的路径之外，产生指向掩模的溅射离子束，以便在扫描过程中从所述掩模溅射材料并补偿沉积的不均匀性。

3. 发明授权

US07687783B2 Multi-beam deflector array device for maskless particle-beam processing 有权
标题翻译：用于无掩模粒子束处理的多光束偏转器阵列器件
公开(公告)号：US07687783B2
公开(公告)日：2010-03-30
申请号：US12038326
申请日：2008-02-27
申请人： Elmar Platzgummer , Hans Löschner , Samuel Kvasnica , Reinhard Springer , Mathias Irmscher , Florian Letzkus , Jörg Butschke
发明人： Elmar Platzgummer , Hans Löschner , Samuel Kvasnica , Reinhard Springer , Mathias Irmscher , Florian Letzkus , Jörg Butschke
IPC分类号： H01J3/14
CPC分类号： G03F1/20 , B82Y10/00 , B82Y40/00 , H01J37/045 , H01J37/3174 , H01J37/3177 , H01J2237/0437
摘要： The invention relates to a multi-beam deflector array device for use in a particle-beam exposure apparatus employing a beam of charged particles, the multi-beam deflector array device having a plate-like shape with a membrane region, the membrane region including a first side facing towards the incoming beam of particles, an array of apertures, each aperture allowing passage of a corresponding beamlet formed out of the beam of particles, a plurality of depressions, each depression being associated with at least one aperture, and an array of electrodes, each aperture being associated with at least one electrode and each electrode being located in a depression, the electrodes being configured to realize a non-deflecting state, wherein the particles that pass through the apertures are allowed to travel along a desired path, and a deflecting state, wherein the particles are deflected off the desired path.
摘要翻译：本发明涉及一种用于使用带电粒子束的粒子束曝光装置中的多光束偏转器阵列装置，该多光束偏转器阵列装置具有带有膜区域的板状形状，该膜区域包括一个第一面朝向输入的粒子束，一组孔，每个孔允许通过由粒子束形成的对应子束，多个凹陷，每个凹陷与至少一个孔相关联，以及阵列的电极，每个孔与至少一个电极相关联，并且每个电极位于凹陷中，电极被配置为实现非偏转状态，其中允许通过孔的颗粒沿着期望的路径行进，并且偏转状态，其中颗粒偏离所需的路径。

4. 发明授权

US06455429B1 Method of producing large-area membrane masks 有权
标题翻译：生产大面积膜面膜的方法
公开(公告)号：US06455429B1
公开(公告)日：2002-09-24
申请号：US09669469
申请日：2000-09-25
申请人： Jörg Butschke , Florian Letzkus , Elisabeth Penteker , Reinhard Springer , Bernd Höfflinger , Hans Löschner
发明人： Jörg Butschke , Florian Letzkus , Elisabeth Penteker , Reinhard Springer , Bernd Höfflinger , Hans Löschner
IPC分类号： H01L21302
CPC分类号： G03F1/20 , G03F1/22
摘要： Inventive methods are provided for the production of large-area membrane masks, wherein an inexpedient mechanical excessive strain on the membrane or of the membrane layer/etching stop layer/supporting wafer system or the resulting breaking of the components is avoided, which excessive strain occurs particularly due to the employment of an etching cell or generally due to the thin semiconductor layers. The stripping of the semiconductor support layer is preferably performed in two partial steps that are carried out in a mechanically sealed etching cell or with a protective coating, or that one partial step is performed with an etching cell and one with a protective coating, or that the stripping of the semiconductor support layer is performed in a mechanically sealed etching cell initially with a supporting grid and that the supporting grid is removed only after withdrawal from the etching cell.
摘要翻译：提供了用于生产大面积膜掩模的本发明的方法，其中避免了膜或膜层/蚀刻停止层/支撑晶片系统上的不适当的机械过度应变或所得到的部件断裂，这种过度的应变发生特别是由于使用蚀刻单元或通常由于薄的半导体层而导致。半导体支撑层的剥离优选以机械密封的蚀刻池或保护涂层中进行的两个部分步骤进行，或者用蚀刻池和一个保护涂层进行一个部分步骤，或半导体支撑层的剥离在最初具有支撑栅格的机械密封蚀刻池中执行，并且仅在从蚀刻单元退出之后才移除支撑栅。

5. 发明授权

US06419752B1 Structuring device for processing a substrate 失效
标题翻译：用于处理基板的结构装置
公开(公告)号：US06419752B1
公开(公告)日：2002-07-16
申请号：US09399303
申请日：1999-09-17
申请人： Igor V. Shvets , Ivajlo W. Rangelow , Peter Güthner , Jens Voight , Guido Mariotto , Hans Löschner
发明人： Igor V. Shvets , Ivajlo W. Rangelow , Peter Güthner , Jens Voight , Guido Mariotto , Hans Löschner
IPC分类号： C23C1600
CPC分类号： H01J37/32357 , C23C16/04 , H01J2237/3321
摘要： A structuring device (SD) for processing a surface of a substrate (SB), comprising a substrate chamber (VC) for mounting the substrate (SB) and a reaction chamber (GC) enabling a gas reaction at a given operating pressure. The reaction chamber (GC) has at least one gas inlet (GL) for a reaction gas and at least one injection outlet (JL) leading into the substrate chamber, while the substrate chamber (VC) is provided with a pumping system (PP) for maintaining a vacuum within the substrate chamber at a pressure not above the operating pressure of the gas reaction in the reaction chamber (GC). The injection outlet (JL) is provided with at least one injection pipe ending into an injection opening of given width, the injection pipe having a length not smaller than the width of the injection opening, the injection pipe forming the gas particles originating from the gas reaction into a gas jet streaming out of the injection opening. For controlling the distance between the injection opening and the substrate surface (SB) at a height of the order of or below the width of the opening as measured along the axis of the injection pipe, the injection outlet and/or the substrate are provided with a positioning means (NP,SP).
摘要翻译：一种用于处理衬底表面的结构设备（SD），包括用于安装衬底（SB）的衬底室（VC）和能够在给定工作压力下进行气体反应的反应室（GC）。反应室（GC）具有用于反应气体的至少一个气体入口（GL）和通向基板室的至少一个喷射出口（JL），而基板室（VC）设置有泵送系统（PP）用于在不高于反应室（GC）中的气体反应的操作压力的压力下在基板室内保持真空。注射口（JL）设置有至少一个注射管，其终止于给定宽度的注射开口，注射管的长度不小于注射开口的宽度，注射管形成来自气体的气体颗粒反应成从喷射口流出的气体喷射。为了控制注射开口和基底表面之间的距离（SB），其沿着注射管的轴线测量的开口宽度的数量级以下，注射口和/或基底设置有定位装置（NP，SP）。

6. 发明授权

US06835508B2 Large-area membrane mask and method for fabricating the mask 有权
标题翻译：大面积膜掩模和掩模制造方法
公开(公告)号：US06835508B2
公开(公告)日：2004-12-28
申请号：US10215227
申请日：2002-08-08
申请人： Jörg Butschke , Albrecht Ehrmann , Ernst Haugeneder , Frank-Michael Kamm , Florian Letzkus , Hans Löschner , Reinhard Springer
发明人： Jörg Butschke , Albrecht Ehrmann , Ernst Haugeneder , Frank-Michael Kamm , Florian Letzkus , Hans Löschner , Reinhard Springer
IPC分类号： G03F900
CPC分类号： G03F1/20 , G03F1/22
摘要： In order to increase the rigidity of a membrane mask that can be used for ion projection lithography, a second wafer made of the material of the membrane layer is provided in addition to a first wafer. The second wafer is patterned in the same way as the first wafer to form a second carrying ring and is fitted on the membrane layer in a mirror-inverted manner with respect to the first wafer so that the membrane area is arranged between the first and second carrying rings in a centered manner in the direction perpendicular to the membrane plane.
摘要翻译：为了提高可用于离子投影光刻的膜掩模的刚性，除了第一晶片之外还提供由膜层材料制成的第二晶片。以与第一晶片相同的方式对第二晶片进行构图，以形成第二承载环，并以相对于第一晶片的镜像反向的方式装配在膜层上，使得膜区域布置在第一和第二晶片之间以垂直于膜平面的方向以中心方式携带环。

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