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    • 4. 发明授权
    • Ion gate for dual ion mobility spectrometer and method thereof
    • 双离子迁移谱仪的离子门及其方法
    • US08013297B2
    • 2011-09-06
    • US12579719
    • 2009-10-15
    • Hua PengQingjun ZhangJin LinYuanjing LiZhiqiang ChenShaoji MaoZhude DaiDai Hua, legal representativeShiping CaoZhongxia ZhangYangtian ZhangDexu LinQinghua Wang
    • Hua PengQingjun ZhangJin LinYuanjing LiZhiqiang ChenShaoji MaoZhude DaiShiping CaoZhongxia ZhangYangtian ZhangDexu LinQinghua Wang
    • G01N27/64H01J49/06
    • H01J3/04H01J49/004H01J49/061
    • Disclosed is an ion gate for a dual IMS and method. The ion gate includes an ion source, a first gate electrode placed on one side of the ion source, a second gate electrode placed on the other side of the ion source, a third gate electrode placed on the side of the first gate electrode away from the ion source, a fourth gate electrode placed on the side of the second gate electrode away from the ion source, wherein during the ion storage, the potential at the position on the tube axis of the ion gate corresponding to the first gate electrode is different from the potentials at the positions on the tube axis corresponding to the ion source and the third gate electrode, and the potential at the position on the tube axis corresponding to the second gate electrode is different from the potentials at the positions on the tube axis corresponding to the ion source and the fourth gate electrode. According to the present invention, after sample gas enters the ion gates, charge exchange with reaction ions occurs between the first gate electrode and the second electrode, and positive and negative ions are continuously stored into the storage regions for the positive and negative ions. This leads to an improvement of utility rate of ions. Then, the ions are educed in a step-wise manner from the storage regions for the positive and negative ions by a simple control of a combination of the electrodes.
    • 公开了一种用于双重IMS和方法的离子门。 离子浇口包括离子源,位于离子源一侧的第一栅电极,位于离子源另一侧的第二栅电极,位于第一栅电极侧的第三栅电极, 离子源,第四栅极放置在远离离子源的第二栅电极侧,其中在离子存储期间,对应于第一栅电极的离子门的管轴上的位置的电位不同 从对应于离子源和第三栅电极的管轴上的位置的电位和对应于第二栅电极的管轴上的位置的电位与管轴对应的位置的电位不同 到离子源和第四栅电极。 根据本发明,在样品气体进入离子浇口之后,在第一栅电极和第二电极之间产生与反应离子的电荷交换,正离子和负离子被连续地存储在正离子和负离子的存储区中。 这导致了离子的利用率的提高。 然后,通过简单地控制电极的组合,从正离子和负离子的存储区域逐步地排出离子。
    • 5. 发明申请
    • ION GATE FOR DUAL ION MOBILITY SPECTROMETER AND METHOD THEREOF
    • 用于双离子移动光谱仪的离子通道及其方法
    • US20100102219A1
    • 2010-04-29
    • US12579719
    • 2009-10-15
    • Hua PengQingjun ZhangJin LinYuanjing LiZhiqiang ChenShaoji MaoZhude DaiShiping CaoZhongxia ZhangYangtian ZhangDexu LinQinghua WangZhang Qing Jun
    • Hua PengQingjun ZhangJin LinYuanjing LiZhiqiang ChenShaoji MaoZhude DaiShiping CaoZhongxia ZhangYangtian ZhangDexu LinQinghua WangZhang Qing Jun
    • H01J49/02B01D59/44
    • H01J3/04H01J49/004H01J49/061
    • Disclosed is an ion gate for a dual IMS and method. The ion gate includes an ion source, a first gate electrode placed on one side of the ion source, a second gate electrode placed on the other side of the ion source, a third gate electrode placed on the side of the first gate electrode away from the ion source, a fourth gate electrode placed on the side of the second gate electrode away from the ion source, wherein during the ion storage, the potential at the position on the tube axis of the ion gate corresponding to the first gate electrode is different from the potentials at the positions on the tube axis corresponding to the ion source and the third gate electrode, and the potential at the position on the tube axis corresponding to the second gate electrode is different from the potentials at the positions on the tube axis corresponding to the ion source and the fourth gate electrode. According to the present invention, after sample gas enters the ion gates, charge exchange with reaction ions occurs between the first gate electrode and the second electrode, and positive and negative ions are continuously stored into the storage regions for the positive and negative ions. This leads to an improvement of utility rate of ions. Then, the ions are educed in a step-wise manner from the storage regions for the positive and negative ions by a simple control of a combination of the electrodes.
    • 公开了一种用于双重IMS和方法的离子门。 离子浇口包括离子源,位于离子源一侧的第一栅电极,位于离子源另一侧的第二栅电极,位于第一栅电极侧的第三栅电极, 离子源,第四栅极放置在远离离子源的第二栅电极侧,其中在离子存储期间,对应于第一栅电极的离子门的管轴上的位置的电位不同 从对应于离子源和第三栅电极的管轴上的位置的电位和对应于第二栅电极的管轴上的位置的电位与管轴对应的位置的电位不同 到离子源和第四栅电极。 根据本发明,在样品气体进入离子浇口之后,在第一栅电极和第二电极之间产生与反应离子的电荷交换,正离子和负离子被连续地存储在正离子和负离子的存储区中。 这导致了离子的利用率的提高。 然后,通过简单地控制电极的组合,从正离子和负离子的存储区域逐步地排出离子。
    • 6. 发明申请
    • Array-based ion storage system and method therefor
    • 基于阵列的离子存储系统及其方法
    • US20100065755A1
    • 2010-03-18
    • US12318343
    • 2008-12-24
    • Yuanjing LiZhiqiang ChenQingjun ZhangHua PengZhude DaiShaoji MaoDexu Lin
    • Yuanjing LiZhiqiang ChenQingjun ZhangHua PengZhude DaiShaoji MaoDexu Lin
    • H01J27/00
    • H01J49/062G01N27/622
    • An array-based ion storage system and method are disclosed. The system comprises: an ion generation section; and an ion storage section comprising a first end electrode coupled to the ion generation section and formed as having a plurality of holes, a second end electrode formed as having a plurality of holes, an intermediate electrode formed as having a plurality of holes, a first insulator formed in the shape of a ring and sandwiched between the first end electrode and the intermediate electrode to insulate them from each other, and a second insulator formed in the shape of a ring and sandwiched between the intermediate electrode and the second end electrode to insulate them from each other. With the present invention, the ion storage section can be made thinner to facilitate consistency in ion extraction and reduce the spread of ion mobility spectrum peak. In addition, the first and second insulators each have a big hole, and thus the ions cannot bump onto the insulation material at both sides at the time of ion vibration or thermal movement in the storage space. Therefore, charge transfer and accumulation at the insulator and the subsequent discharge will not occur, suppressing instability of storage and loss of ions.
    • 公开了一种基于阵列的离子存储系统和方法。 该系统包括:离子产生部分; 以及离子存储部,其包括耦合到所述离子产生部并形成为具有多个孔的第一端电极,形成为具有多个孔的第二端电极,形成为具有多个孔的中间电极,第一 绝缘体形成为环状并夹在第一端电极和中间电极之间以使它们彼此绝缘;以及第二绝缘体,其形成为环形并夹在中间电极和第二端电极之间以绝缘 他们从彼此。 利用本发明,可以使离子存储部分更薄以促进离子提取的一致性,并减少离子迁移谱峰的扩散。 此外,第一绝缘体和第二绝缘子各自具有大的孔,因此离子在存储空间中的离子振动或热运动时两侧不会碰到绝缘材料上。 因此,不会发生绝缘体的电荷转移和积聚,并且不会发生随后的放电,从而抑制存储的不稳定性和离子的损失。
    • 8. 发明授权
    • Array-based ion storage system and method therefor
    • 基于阵列的离子存储系统及其方法
    • US08084737B2
    • 2011-12-27
    • US12318343
    • 2008-12-24
    • Yuanjing LiZhiqiang ChenQingjun ZhangHua PengZhude DaiShaoji MaoDexu Lin
    • Yuanjing LiZhiqiang ChenQingjun ZhangHua PengZhude DaiShaoji MaoDexu Lin
    • H01J27/00
    • H01J49/062G01N27/622
    • An array-based ion storage system includes an ion generation section, and an ion storage section having a first end electrode coupled to the ion generation section and having multiple holes, a second end electrode having multiple holes, an intermediate electrode having multiple holes, a first insulator formed as a ring between the first end electrode and the intermediate electrode, and a second insulator formed as a ring between the intermediate electrode and the second end electrode. The ion storage section can be made thinner to facilitate consistency in ion extraction and reduce the spread of an ion mobility spectrum peak. The insulators have a big hole, and the ions cannot bump onto the insulation material during ion vibration or thermal movement in the storage space. Therefore, charge transfer and accumulation at the insulator and the subsequent discharge will not occur, suppressing instability of storage and loss of ions.
    • 基于阵列的离子存储系统包括离子产生部分和离子存储部分,其具有耦合到离子产生部分并具有多个孔的第一端电极,具有多个孔的第二端电极,具有多个孔的中间电极, 第一绝缘体形成为第一端电极和中间电极之间的环,以及在中间电极和第二端电极之间形成为环的第二绝缘体。 离子存储部分可以被制成更薄以促进离子提取的一致性并减少离子迁移谱峰的扩散。 绝缘子有一个很大的空穴,离子在储存空间的离子振动或热运动过程中不会碰到绝缘材料上。 因此,不会发生绝缘体的电荷转移和积聚,并且不会发生随后的放电,从而抑制存储的不稳定性和离子的损失。
    • 9. 发明申请
    • SECURITY INSPECTION DOOR
    • 安全检查门
    • US20090321638A1
    • 2009-12-31
    • US12468194
    • 2009-05-19
    • Haifeng HuZhiqiang ChenYuanjing LiJin LinJinyu ZhangHua PengQingjun ZhangZhongxia ZhangYangtian ZhangXiaoti YinLiwei Song
    • Haifeng HuZhiqiang ChenYuanjing LiJin LinJinyu ZhangHua PengQingjun ZhangZhongxia ZhangYangtian ZhangXiaoti YinLiwei Song
    • G01N23/00G01T1/00G01R19/00
    • G01V11/00G01N1/02G01N2001/022
    • The present invention discloses a security inspection door comprising a narcotic drug/explosive detecting subsystem, a radioactive substance detecting subsystem and a metal detecting subsystem which are provided in a tank body, wherein electromagnetic radiation shields are respectively provided around the three detecting subsystems, so that the narcotic drug/explosive detecting subsystem, the radioactive substance detecting subsystem and the metal detecting subsystem are isolated from one another and are not interfered with one another. In the present invention, the narcotic drug/explosive detecting subsystem, the radioactive substance detecting subsystem and the metal detecting subsystem are combined together for the first time to form a novel security inspection door, so the narcotic drugs/the explosives, the radioactive substances and the dangerous metal articles can be detected at the same time. Further, in the present invention, electromagnetic radiation shields are respectively provided around the three detecting subsystems, so that the three detecting subsystems are isolated from one another and are not interfered with one another, and thus, the inspection reliability and the inspection accuracy are improved.
    • 本发明公开了一种安全检查门,其包括设在罐体内的麻醉药物/爆炸物检测子系统,放射性物质检测子系统和金属检测子系统,其中分别在三个检测子系统周围设置电磁辐射屏蔽,使得 麻醉药品/爆炸物检测子系统,放射性物质检测子系统和金属检测子系统彼此隔离,不会相互干扰。 在本发明中,麻醉药物/爆炸物检测子系统,放射性物质检测子系统和金属检测子系统首次组合形成新型安全检查门,麻醉药品/爆炸物,放射性物质和 可以同时检测危险的金属制品。 此外,在本发明中,在三个检测子系统周围分别设置有电磁辐射屏蔽,使得三个检测子系统彼此隔离并且不彼此干扰,从而提高了检查可靠性和检查精度 。