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1. 发明授权

US07354477B2 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate 失效
公开(公告)号：US07354477B2
公开(公告)日：2008-04-08
申请号：US10936512
申请日：2004-09-09
申请人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
发明人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
IPC分类号： C30B21/08
CPC分类号： C30B23/02 , C30B25/02 , C30B29/403 , C30B29/406
摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).

2. 发明授权

US07303630B2 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate 失效
标题翻译：生长GaN晶体的方法，单晶GaN衬底的制造方法和单晶GaN衬底
公开(公告)号：US07303630B2
公开(公告)日：2007-12-04
申请号：US10933291
申请日：2004-09-03
申请人： Kensaku Motoki , Takuji Okahisa , Ryu Hirota , Seiji Nakahata , Koji Uematsu
发明人： Kensaku Motoki , Takuji Okahisa , Ryu Hirota , Seiji Nakahata , Koji Uematsu
IPC分类号： C30B21/08
CPC分类号： C30B29/40 , C30B25/18
摘要： Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations from neighboring regions, accumulate the dislocations into pit bottoms, and make closed defect accumulating regions (H) on the seeds. The polycrystalline or slanting orientation single crystal closed defect accumulating regions (H) induce microcracks due to thermal expansion anisotropy. The best one is orientation-inversion single crystal closed defect accumulating regions (H). At an early stage, orientation-inverse protrusions are induced on tall facets and unified with each other above the seeds. Orientation-inverse crystals growing on the unified protrusions become the orientation-inverse single crystal closed defect accumulating regions (H).
摘要翻译：点状种子以规则图案植入下衬底。通过小面生长法在种植植入的底物上生长GaN晶体。小面生长使种子凹陷在种子上方。方面组装相邻区域的位错，将位错累积到坑底，并在种子上形成闭合缺陷积聚区（H）。多晶或倾斜取向单晶闭合缺陷积聚区（H）由于热膨胀各向异性而引起微裂纹。最好的是定向反转单晶闭合缺陷积聚区（H）。在早期阶段，在高面上诱导取向反突起，并在种子之上彼此统一。在均匀突起上生长的取向反相晶体成为取向反单晶闭合缺陷积聚区（H）。

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