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1. 发明申请

US20110065265A1 FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE 有权
标题翻译：第III组氮化物晶体的制造方法和制造装置
公开(公告)号：US20110065265A1
公开(公告)日：2011-03-17
申请号：US12949268
申请日：2010-11-18
申请人： Hitoshi KASAI , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi KASAI , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/20
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

2. 发明授权

US07534310B2 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate 有权
标题翻译：单晶GaN衬底，生长单晶GaN的方法和制造单晶GaN衬底的方法
公开(公告)号：US07534310B2
公开(公告)日：2009-05-19
申请号：US11434744
申请日：2006-05-17
申请人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
发明人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
IPC分类号： C30B29/38
CPC分类号： C30B29/406 , C30B23/002 , C30B25/02 , C30B29/403
摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).
摘要翻译：低位错密度GaN单晶衬底通过形成具有平行条纹的种子掩模，并且定期地在下衬底上周期性地对准，在面生长条件下生长GaN晶体，形成平行的小平面重叠和基于掩模的小平面谷条纹，保持小平面山丘和小平面谷，产生伴随谷的大量缺陷积聚区域（H），产生小面后的低位错单晶区域（Z），使平面生长区域（Y）在平面之后通过生长小面的作用将小面上的面陷入谷中，减少低位错单晶区（Z）和C平面生长区（Y）中的位错，并在芯（S）或大量缺陷积聚区（H）的界面（K）。

3. 发明申请

US20080202409A1 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate 有权
标题翻译：生长GaN晶体的方法，单晶GaN衬底的制造方法和单晶GaN衬底
公开(公告)号：US20080202409A1
公开(公告)日：2008-08-28
申请号：US12068891
申请日：2008-02-13
申请人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
发明人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
IPC分类号： C30B23/04
CPC分类号： C30B29/406 , C30B23/002 , C30B25/02 , C30B29/403
摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).
摘要翻译：低位错密度GaN单晶衬底通过形成具有平行条纹的种子掩模，并且定期地在下衬底上周期性地对准，在面生长条件下生长GaN晶体，形成平行的小平面重叠和基于掩模的小平面谷条纹，保持小平面山丘和小平面谷，产生伴随谷的大量缺陷积聚区域（H），产生小面后的低位错单晶区域（Z），使平面生长区域（Y）在平面之后通过生长小面的作用将小面上的面陷入谷中，减少低位错单晶区（Z）和C平面生长区（Y）中的位错，并在芯（S）或大量缺陷积聚区（H）的界面（K）。

4. 发明申请

US20070280872A1 Method of growing gallium nitride crystal and gallium nitride substrate 审中-公开
标题翻译：生长氮化镓晶体和氮化镓衬底的方法
公开(公告)号：US20070280872A1
公开(公告)日：2007-12-06
申请号：US11806888
申请日：2007-06-05
申请人： Takuji Okahisa , Kensaku Motoki , Koji Uematsu , Seiji Nakahata , Ryu Hirota , Hideyuki Ijiri , Hitoshi Kasai , Shunsuke Fujita , Fumitaka Sato , Toru Matsuoka
发明人： Takuji Okahisa , Kensaku Motoki , Koji Uematsu , Seiji Nakahata , Ryu Hirota , Hideyuki Ijiri , Hitoshi Kasai , Shunsuke Fujita , Fumitaka Sato , Toru Matsuoka
IPC分类号： C30B19/00 , C01B21/06 , H01L21/322
CPC分类号： C30B29/406 , C01B21/0632 , C01P2002/54 , C30B25/183 , H01L21/0237 , H01L21/02389 , H01L21/02395 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0257 , H01L21/02609 , H01L21/02639 , H01L21/02642
摘要： The GaN facet growth method produces defect accumulating regions H on masks by forming a dotmask or a stripemask on an undersubstrate, growing GaN in a reaction furnace in vapor phase, inducing GaN crystals on exposed parts without covering the masks, inviting facets starting from verges of the masks and producing defect accumulating regions H on the mask. The defect accumulating regions H have four versions, that is, non (O), polycrystal (P), c-axis inclining single crystal (A) and orientation inversion (J). The best is the orientation inversion region (J). A sign of occurrence of the orientation inversion regions (J) is beaks of inversion orientation appearing on facets. GaN is grown on a masked undersubstrate by supplying a carbon material at a hydrocarbon partial pressure of 10 Pa to 5 kPa for 0.5 hour to 2 hour by an HVPE facet growth method without burying facets.
摘要翻译： GaN面生长方法通过在下衬底上形成网状掩模或剥离掩模来形成掩模上的缺陷积聚区H，在气相中在反应炉中生长GaN，在不覆盖掩模的情况下在暴露部分上诱导GaN晶体，掩模，并在掩模上产生缺陷累积区域H. 缺陷积聚区H具有四种形式，即非（O），多晶（P），c轴倾斜单晶（A）和取向反转（J）。最好的是取向反演区（J）。取向反转区域（J）的发生的标志是出现在面上的反转取向的喙。通过在没有掩埋面的HVPE刻面生长法中，通过以10Pa〜5kPa的烃分压供给0.5小时〜2小时的碳材料，在掩蔽的底基板上生长GaN。

5. 发明授权

US08404569B2 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
公开(公告)号：US08404569B2
公开(公告)日：2013-03-26
申请号：US12949268
申请日：2010-11-18
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

6. 发明授权

US08198177B2 AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing same 有权
标题翻译： AlxInyGal-x-yN混合晶体衬底，其生长方法及其生产方法
公开(公告)号：US08198177B2
公开(公告)日：2012-06-12
申请号：US13281106
申请日：2011-10-25
申请人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
发明人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
IPC分类号： H01L21/322
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02642 , H01L21/02647
摘要： Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0
摘要翻译：将种子以规则的图案植入到下衬底上。通过小平面生长法在混合晶体生长在种子植入的底层基底上，使Al x In y Ga 1-x-y N（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0

7. 发明授权

US07794543B2 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate 有权
标题翻译：生长GaN晶体的方法，单晶GaN衬底的制造方法和单晶GaN衬底
公开(公告)号：US07794543B2
公开(公告)日：2010-09-14
申请号：US12068891
申请日：2008-02-13
申请人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
发明人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
IPC分类号： C30B25/04
CPC分类号： C30B29/406 , C30B23/002 , C30B25/02 , C30B29/403
摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).
摘要翻译：低位错密度GaN单晶衬底通过形成具有平行条纹的种子掩模，并且定期地在下衬底上周期性地对准，在面生长条件下生长GaN晶体，形成平行的小平面重叠和基于掩模的小平面谷条纹，保持小平面山丘和小平面谷，产生伴随谷的大量缺陷积聚区域（H），产生小面后的低位错单晶区域（Z），使平面生长区域（Y）在平面之后通过生长小面的作用将小面上的面陷入谷中，减少低位错单晶区（Z）和C平面生长区（Y）中的位错，并在芯（S）或大量缺陷积聚区（H）的界面（K）。

8. 发明授权

US07858502B2 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US07858502B2
公开(公告)日：2010-12-28
申请号：US12540492
申请日：2009-08-13
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

9. 发明授权

US07655960B2 A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same 有权
标题翻译： AlxInyGa1-x-yN混合晶体基板，其生长方法及其制造方法
公开(公告)号：US07655960B2
公开(公告)日：2010-02-02
申请号：US11501817
申请日：2006-08-10
申请人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
发明人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
IPC分类号： H01L33/00
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02642 , H01L21/02647
摘要： Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1, 0
摘要翻译：将种子以规则的图案植入到下衬底上。通过小面生长法在种子植入的底层上生长Al x In y Ga 1-x-y N（0 <= x <= 1,0 <= y <= 1,0

10. 发明申请

US20080006201A1 Method of growing gallium nitride crystal 审中-公开
标题翻译：生长氮化镓晶体的方法
公开(公告)号：US20080006201A1
公开(公告)日：2008-01-10
申请号：US11826798
申请日：2007-07-18
申请人： Ryu Hirota , Kensaku Motoki , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
发明人： Ryu Hirota , Kensaku Motoki , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
IPC分类号： C30B25/04
CPC分类号： C30B25/183 , C30B23/025
摘要： The facet growth method grows GaN crystals by preparing an undersubstrate, forming a dotmask or a stripemask on the undersubstrate, growing GaN in vapor phase, causing GaN growth on exposed parts, suppressing GaN from growing on masks, inducing facets starting from edges of the masks and rising to tops of GaN crystals on exposed parts, maintaining the facets, making defect accumulating regions H on masked parts. attracting dislocations into the defect accumulating regions H on masks and reducing dislocation density of the surrounding GaN crystals on exposed parts. The defect accumulating regions H on masks have four types. The best of the defect accumulating regions H is an inversion region J. Occurrence of the inversion regions J requires preceding appearance of beaks with inversion orientation on the facets. Sufficient inversion regions J are produced at an initial stage by maintaining the temperature Tj at 900° C. to 990° C. without fail. Allowable inversion regions J beaks are produced at an initial stage by the sets of temperatures T(K) and growing speeds Vj (μm/h) satisfying −4.39×105/T+3.87×102
摘要翻译：小面生长方法通过制备下衬底，在下衬底上形成点阵掩模或剥离掩模来生长GaN晶体，在气相中生长GaN，在曝光部分上生长GaN，抑制GaN在掩模上生长，从掩模的边缘开始引起刻面并在暴露部分上升到GaN晶体的顶部，保持刻面，使掩模部件上的缺陷积聚区域H。在掩模上吸引缺陷积聚区H的位错，并降低暴露部分周围GaN晶体的位错密度。掩模上的缺陷积聚区域H具有四种类型。缺陷累积区域H中的最好的是反转区域J.反转区域J的出现需要在面上具有反转取向的喙前面的出现。通过将温度Tj保持在900℃至990℃而在初始阶段产生足够的反转区域J. 在初始阶段通过温度T（K）和生长速度Vj（mum / h）的集合产生允许的反转区域J喙，满足-4.39×10 5 / T +3.87×10 2

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