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1. 发明专利

JP2012049041A Silver coating material for movable contact component and method for manufacturing the same 审中-公开
标题翻译：用于可移动接触部件的镀银材料及其制造方法
公开(公告)号：JP2012049041A
公开(公告)日：2012-03-08
申请号：JP2010191579
申请日：2010-08-27
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： KOSEKI KAZUHIRO , KOBAYASHI YOSHIAKI , KIKUCHI SHIN
IPC分类号： H01H1/04 , H01H11/04
摘要： PROBLEM TO BE SOLVED: To provide a silver coating material for a movable contact component and a manufacturing method therefor, in which a silver layer on a surface is not peeled and the contact resistance is not increased even after long-term use under an environment where switching is repeated.SOLUTION: The silver coating material for a movable contact component is constituted by sequentially laminating an underlayer 2 made of any one of nickel, a nickel alloy, cobalt, and a cobalt alloy, an intermediate layer 3 made of any one of copper, a copper alloy, tin, and a tin alloy, and an outermost layer 5 made of silver or a silver alloy, on a conductive base 1 made of copper, a copper alloy, iron, or an iron alloy. An intermediate oxide layer 4 as a second intermediate layer exists between the intermediate layer and the outermost layer.
摘要翻译：要解决的问题：为了提供一种用于可动接触部件的银涂层材料及其制造方法，其中表面上的银层不被剥离，并且即使在长期使用后接触电阻也不增加重复切换的环境。解决方案：用于可移动接触部件的银涂料通过依次层压由镍，镍合金，钴和钴合金中的任一种制成的底层2，由铜中的任一种制成的中间层3 ，铜合金，锡和锡合金，以及由银或银合金制成的最外层5，在由铜，铜合金，铁或铁合金制成的导电基体1上。作为第二中间层的中间氧化物层4存在于中间层和最外层之间。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012033919A Lead frame for optical semiconductor device, method of manufacturing the same, and optical semiconductor device 有权
标题翻译：用于光学半导体器件的引线框架，其制造方法和光学半导体器件
公开(公告)号：JP2012033919A
公开(公告)日：2012-02-16
申请号：JP2011150461
申请日：2011-07-06
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： KOBAYASHI YOSHIAKI , SUZUKI SATOSHI , TACHIBANA AKIRA , KIKUCHI SHIN , ZAMA SATORU
IPC分类号： H01L33/62 , H01L23/48
CPC分类号： H01L2224/48091 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a high brightness lead frame exhibiting excellent heat dissipation for an optical semiconductor device used in an LED, a photocoupler or a photointerrupter in which overall reflectivity is higher than that of a conventional silver coating in visual light range (wavelength 400-800nm), and reflectivity is good especially when a chip emitting light near the wavelength of 450nm is mounted, and to provide a method of manufacturing the same.SOLUTION: The lead frame for an optical semiconductor device has a reflective layer formed partially or entirely on at least on one side or both sides of the outermost surface of a conductive substrate. On the outermost surface in a region where at least the light emitted from an optical semiconductor element is reflected, the reflective layer has such a texture as at least the surface of a plating texture consisting of silver is deformed plastically. At least on the surface thereof, the area ratio of plating texture consisting of silver remaining by plastic deformation is 50% or less.
摘要翻译：要解决的问题：为了提供一种在用于LED，光耦合器或光断续器中的光学半导体器件表现出优异的散热的高亮度引线框架，其中总体反射率高于常规的银色涂层在视觉上的反射率范围（波长400-800nm），并且特别是当安装发射波长为450nm的光的芯片时，反射率是很好的，并且提供其制造方法。解决方案：用于光学半导体器件的引线框架具有在导电基板的最外表面的至少一侧或两侧上部分或全部形成的反射层。在至少从光半导体元件发射的光被反射的区域中的最外表面上，反射层具有至少由银构成的电镀纹理的表面塑性变形的纹理。至少在其表面上，由通过塑性变形剩余的银构成的电镀纹理的面积比为50％以下。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012023355A Led component material having plating film with high reflectance and led component 有权
标题翻译： LED组件材料具有高反射和LED组件的镀膜
公开(公告)号：JP2012023355A
公开(公告)日：2012-02-02
申请号：JP2011133716
申请日：2011-06-15
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： TACHIBANA AKIRA , KOBAYASHI YOSHIAKI , KIKUCHI SHIN , SUZUKI SATOSHI
IPC分类号： H01L33/60 , H01L23/50 , H01L33/62
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a lead frame which is sufficient in reflectance and superior in high luminance and heat dissipation when a chip emitting light to a near-ultraviolet region (wavelength of 340 to 400 nm), especially around wavelength of 375 nm in a lead frame for optical semiconductor device, which is used for an LED, a photocoupler and a photointerrupter, and to provide a manufacturing method of the lead frame and an LED component using the lead frame for optical semiconductor device.SOLUTION: An LED component material is obtained by depositing a plating film through electrocrystallization on, partially or entirely, at least one face or both faces of a metal base and smoothing a surface of the plating film. Reflectance and adhesion with a sealing material are improved by making surface roughness Ra in measurement by a stylus surface roughness meter to be 0.010 μm or above and surface roughness Sa in measurement by an atomic force microscope to be 50 nm or below in the LED component material.
摘要翻译：要解决的问题：为了提供一种引线框架，当将芯片发射到近紫外区域（波长为340-400nm）的光线，特别是波长的波长范围内时，提供足够的反射率和优异的高亮度和散热性在用于LED，光电耦合器和光断续器的光半导体装置的引线框架中，375nm，并且提供引线框架的制造方法和使用光半导体器件的引线框架的LED部件。解决方案：通过在部分或全部金属基底的至少一个面或两面上进行电结晶沉积电镀膜，并平滑电镀膜的表面，获得LED部件材料。通过使用针式表面粗糙度计测量的表面粗糙度Ra为0.010μm以上，通过原子力显微镜测定的表面粗糙度Sa为50nm以下，可以提高与密封材料的反射率和粘合性。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011146741A Lead frame for optical semiconductor device, method for manufacturing the same, and optical semiconductor device 有权
标题翻译：用于光学半导体器件的引线框架，其制造方法和光学半导体器件
公开(公告)号：JP2011146741A
公开(公告)日：2011-07-28
申请号：JP2011087432
申请日：2011-04-11
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： KOBAYASHI YOSHIAKI , KOSEKI KAZUHIRO , KIKUCHI SHIN
IPC分类号： H01L23/50 , H01L33/60
CPC分类号： H01L33/62 , H01L33/486 , H01L2924/0002 , Y10T428/26 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide: a lead frame for an optical semiconductor device, excelling in reflectivity characteristics particularly in a near-ultraviolet region without degrading luminance for a long term; a method for manufacturing the same; and an optical semiconductor device. SOLUTION: In this lead frame for an optical semiconductor device, a layer formed of silver or a silver alloy is formed on a conductive base. The lead frame for an optical semiconductor device includes, as the outermost layer, a surface layer which is formed of a metal selected from a group comprising gold, a gold alloy, palladium and a palladium alloy or an alloy thereof, wherein a solid solution layer of the metal material that serves as the main component of the surface layer and silver is formed between the surface layer and the layer formed of silver or the silver alloy, and the solid solution layer has a concentration distribution from the surface layer side. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供：一种光学半导体器件的引线框架，特别是在近紫外区域具有优异的反射特性，而长期不降低亮度; 其制造方法; 和光半导体装置。解决方案：在这种用于光学半导体器件的引线框架中，在导电基底上形成由银或银合金形成的层。作为最外层的光学半导体装置的引线框架，包括由选自金，金合金，钯和钯合金或其合金的金属形成的表面层，其中固溶层作为表层的主要成分的金属材料和银形成在表面层和由银或银合金形成的层之间，固溶层具有从表面层侧的浓度分布。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2012028757A Lead frame for optical semiconductor device, method of manufacturing the same, and optical semiconductor device 有权
标题翻译：用于光学半导体器件的引线框架，其制造方法和光学半导体器件
公开(公告)号：JP2012028757A
公开(公告)日：2012-02-09
申请号：JP2011137423
申请日：2011-06-21
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： KOBAYASHI YOSHIAKI , MATSUDA AKIRA , SUZUKI SATOSHI , KIKUCHI SHIN , ZAMA SATORU
IPC分类号： H01L23/48 , H01L33/60 , H01L33/62
CPC分类号： H01L2224/48091 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a lead frame for an optical semiconductor device which is used in an LED, a photocoupler, a photointerrupter, or the like, that has its emission wavelength in a range from near-ultraviolet through visible light (wavelength 340-800 nm), and in which reflectivity is good when a chip emitting light in a near-ultraviolet range (wavelength 340-400 nm), especially a wavelength of around 375 nm, and in a visible light range (wavelength 400-800 nm), especially a wavelength of around 450 nm, is mounted and high luminance and excellent heat dissipation are ensured.SOLUTION: The lead frame for an optical semiconductor device has a reflective layer partially or entirely at least on one side or both sides of the outermost surface of a substrate. On the outermost surface at least in a region where light emitted from an optical semiconductor element is reflected, the reflective layer has such a texture as a plating texture composed of silver or a silver alloy and deformed plastically.
摘要翻译：要解决的问题：为了提供一种用于LED，光电耦合器，光断续器等的光学半导体器件的引线框架，其发射波长在从近紫外到可见光的范围内（波长340-800nm），并且当发射近紫外范围（波长340-400nm）的光的芯片，特别是约375nm的波长和可见光范围（波长400nm）的光的反射率良好时 -800nm），特别是约450nm的波长，并且确保了高亮度和优异的散热。解决方案：用于光学半导体器件的引线框架在基板的最外表面的至少一侧或两侧部分或全部具有反射层。至少在从光半导体元件发射的光被反射的区域的最外表面上，反射层具有由银或银合金构成的电镀纹理和塑性变形的纹理。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2010166044A Lead frame for optical semiconductor device, and method for manufacturing the same 审中-公开
标题翻译：用于光学半导体器件的引线框架及其制造方法
公开(公告)号：JP2010166044A
公开(公告)日：2010-07-29
申请号：JP2009289449
申请日：2009-12-21
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： KOBAYASHI YOSHIAKI , KOSEKI KAZUHIRO , KIKUCHI SHIN
IPC分类号： H01L33/62 , H01L23/50
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a lead frame for an optical semiconductor device, which is sufficient in reflection characteristics, and also is excellent in corrosion resistance and wire bondability. SOLUTION: In the lead frame for the optical semiconductor device, a reflection layer 2 composed of silver or silver alloy is formed on a base 1. In the lead frame, at least one or more rust proof films 3 composed of an organic compound with physical or chemical coupling with silver or silver alloy are formed on the surface of the reflection layer 2 composed of silver or silver alloy, and the total thickness of the rust proof films 3 is ≤50 Å. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供足够的反射特性的光学半导体器件的引线框，并且还具有优异的耐腐蚀性和引线接合性。解决方案：在用于光学半导体器件的引线框架中，在基底1上形成由银或银合金构成的反射层2.在引线框架中，至少一个或多个防锈膜3由有机在由银或银合金构成的反射层2的表面上形成与银或银合金的物理或化学偶合的化合物，并且防锈膜3的总厚度≤50。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2012009572A Photosemiconductor device lead frame, manufacturing method thereof, and photosemiconductor device 有权
标题翻译：光电导体器件引线框架及其制造方法和光电子器件
公开(公告)号：JP2012009572A
公开(公告)日：2012-01-12
申请号：JP2010143097
申请日：2010-06-23
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： KOBAYASHI YOSHIAKI , KIKUCHI SHIN
IPC分类号： H01L23/50
CPC分类号： H01L2224/48091 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a lead frame which has good reflectivity in ultraviolet to near-infrared regions and good wire bondability, excels in corrosion resistance and specially has superior wire bondability and a manufacturing method for the same.SOLUTION: A photosemiconductor device lead frame includes a reflection layer 2 made of rhodium or rhodium alloy created on a conductive substrate 1, on top of which is formed an uppermost layer 3 composed of gold, palladium or platinum or an alloy of the foregoing in thickness of 0.001 to 0.05 μm, the uppermost layer 3 being created at a spot to be wire-bonded. The hardness Hof the lead frame by a nano-indentation process at a depth of 0.005 μm from the surface of the uppermost layer 3 is made to be in the range 500 to 3000 N/mm.
摘要翻译：要解决的问题：提供一种在紫外线到近红外区域具有良好的反射率并且具有良好的线接合性的引线框架，具有优异的耐腐蚀性，并且特别具有优异的引线接合性及其制造方法。解决方案：光半导体装置引线框架包括由在导电基板1上形成的由铑或铑合金制成的反射层2，其上形成由金，钯或铂构成的最上层3或由上述厚度为0.001〜0.05μm，最上层3产生在要引线接合的点上。通过从最上层3的表面开始的深度为0.005μm的纳米压痕处理，引线框架的硬度H IT 为500〜3000 N / mm 2 。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2012009542A Lead flame for optical semiconductor device and method for manufacturing the same 有权
标题翻译：用于光学半导体器件的引线火焰及其制造方法
公开(公告)号：JP2012009542A
公开(公告)日：2012-01-12
申请号：JP2010142705
申请日：2010-06-23
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： KOBAYASHI YOSHIAKI , KIKUCHI SHIN
IPC分类号： H01L33/62 , H01L23/50
CPC分类号： H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a lead flame for optical semiconductor device with excellent light reflectance and high brightness which has excellent long-term reliability, wire bondability and superior soldering property in regions exposed to the external, and a method for manufacturing the same.SOLUTION: In a lead flame for optical semiconductor device in which a wire bonding is provided on a base board, a reflective layer consisting of Ag or Ag alloy is formed on the base board, an anticorrosion coat layer consisting of metal or alloy selected from a group consisting of indium, indium alloy, tin and tin alloy, and having a thickness of 0.005 to 0.2 μm is formed on the reflective layer, and an outmost layer consisting of metal or alloy selected from a group consisting of Au, Pt and Au alloy not including Ag, and Pt alloy not including Ag, and having a thickness of 0.001 to 0.05 μm is formed on a region where at least of the wire bonding is provided, on the anticorrosion coat layer.
摘要翻译：要解决的问题：为了提供具有优异的光反射率和高亮度的光学半导体器件的铅火焰，其在暴露于外部的区域中具有优异的长期可靠性，线焊接性和优异的焊接性能，以及制造方法一样。解决方案：在基板上设置引线接合的光半导体装置的铅火焰中，在基板上形成由Ag或Ag合金构成的反射层，由金属或合金构成的防腐层选自由铟，铟合金，锡和锡合金组成的组，并且在反射层上形成厚度为0.005至0.2μm的最外层，以及由Au，Pt组成的组中的金属或合金组成的最外层和不含Ag的Au合金和不含Ag的Pt合金，并且在至少提供引线接合的区域上形成厚度为0.001〜0.05μm的防腐蚀涂层。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2011129658A Lead frame for optical semiconductor device, method for manufacturing the same, and optical semiconductor device 审中-公开
标题翻译：用于光学半导体器件的引线框架，其制造方法和光学半导体器件
公开(公告)号：JP2011129658A
公开(公告)日：2011-06-30
申请号：JP2009285883
申请日：2009-12-17
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： KOBAYASHI YOSHIAKI , KIKUCHI SHIN
IPC分类号： H01L33/62
CPC分类号： H01L2224/48091 , H01L2224/48227 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a lead frame having high reflectance between an ultraviolet region and a near-infrared region, good wire bonding performance and excellent corrosion resistance, and a method for manufacturing the lead frame. SOLUTION: A lead frame has an outermost surface layer, which is formed of either gold, palladium, platinum or an alloy thereof, at least in a portion subjected to wire bonding, in an upper layer of a reflection layer formed of rhodium or an rhodium alloy on a conductive substrate. By forming the outermost surface layer to have a thickness of 0.001-0.05 μm, a lead frame for an optical semiconductor device can be provided, wherein the lead frame is excellent in light reflectance, also has good corrosion resistance, and achieves further improved reliability in wire bonding performance. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在紫外区域和近红外区域之间具有高反射率的引线框架，良好的引线接合性能和优异的耐腐蚀性，以及用于制造引线框架的方法。解决方案：在由铑形成的反射层的上层中，至少在引线接合部分中，引线框架具有由金，钯，铂或其合金形成的最外表面层或导电基板上的铑合金。通过形成厚度为0.001-0.05μm的最外表面层，可以提供一种用于光学半导体器件的引线框架，其中引线框架的光反射率优异，并且还具有良好的耐腐蚀性，并且进一步提高了可靠性引线接合性能。版权所有（C）2011，JPO＆INPIT

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