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1. 发明专利

JP2013160813A Resist composition and pattern forming method 审中-公开
公开(公告)号：JP2013160813A
公开(公告)日：2013-08-19
申请号：JP2012020345
申请日：2012-02-01
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： ISHIZUKA KEITA
IPC分类号： G03F7/039 , C07C309/12 , C08F20/38 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition having excellent lithography characteristics and a resist pattern forming method.SOLUTION: A resist composition includes a base component (A) whose solubility in an alkali developer changes by action of acid, and an acid generator component (B) for generating acid by exposure. The acid generator component (B) contains an acid generator (B1) made of a compound represented by a general formula (b1-1) [X represents a 1-15C hydrocarbon group which may have a substituent, Rrepresents a 1-10C hydrocarbon group which may have a substituent, Rrepresents a fluorinated alkyl group, v1 represents an integer of 1 to 5, v2 represents an integer of 0 to 4, and Zrepresents an organic cation].

2. 发明专利

JP2011085878A Resist composition, method for forming resist pattern, novel compound, and acid generator 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案，新型化合物和酸产生剂的方法
公开(公告)号：JP2011085878A
公开(公告)日：2011-04-28
申请号：JP2009270085
申请日：2009-11-27
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KAWAKAMI AKINARI , UTSUMI YOSHIYUKI , HANEDA HIDEO , SESHIMO TAKEHIRO , MATSUZAWA KENSUKE , ISHIZUKA KEITA , ENDO KOTARO
IPC分类号： G03F7/004 , C07C309/06 , C07C381/12 , C08F20/10 , G03F7/039 , H01L21/027
CPC分类号： C07D327/04 , C07D307/33 , C07D307/93 , C07D307/94 , C07D309/30 , C07D409/12 , C07D493/18 , C07D497/18 , G03F7/0045 , G03F7/0397 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a novel compound useful as an acid generator for resist composition, the acid generator formed of the compound, the resist composition containing the acid generator, and a method for forming a resist pattern using the resist composition.
SOLUTION: The resist composition contains a base component (A) whose solubility to an alkali developer changes by the action of an acid, and an acid generator component (B) which generates the acid by exposure. The acid generator component (B) contains an acid generator (B1) formed of a compound having a group represented by general formula (I) in a cation part, wherein R
5 represents an organic group having a carbonyl group, an ester bond or a sulfonyl group, and Q represents a divalent linking group.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：待解决的问题：为了提供可用作抗蚀剂组合物的酸发生剂的新型化合物，由化合物形成的酸产生剂，含有酸产生剂的抗蚀剂组合物和使用该抗蚀剂组合物形成抗蚀剂图案的方法。解决方案：抗蚀剂组合物含有其碱性显影剂通过酸的作用而变化的碱成分（A）和通过曝光产生酸的酸产生剂组分（B）。酸产生剂组分（B）含有在阳离子部分由具有通式（I）表示的基团的化合物形成的酸产生剂（B1），其中R 5表示具有羰基的有机基团基团，酯键或磺酰基，Q表示二价连接基团。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010061145A Method for forming resist pattern 有权
标题翻译：形成电阻图案的方法
公开(公告)号：JP2010061145A
公开(公告)日：2010-03-18
申请号：JP2009239780
申请日：2009-10-16
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： HIRAYAMA HIROSHI , HANEDA HIDEO , FUJIMURA SATOSHI , IWAI TAKESHI , SATO MITSURU , TAKASU RYOICHI , TACHIKAWA TOSHIKAZU , IWASHITA ATSUSHI , ISHIZUKA KEITA , YAMADA TOMOTAKA , TAKAYAMA JUICHI , YOSHIDA MASAAKI
IPC分类号： G03F7/039 , G03F7/26 , C08F20/18 , G03F7/038 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, using a resist composition which is stable relative to solvents used in immersion lithography processes and displays superior sensitivity and resist pattern profile. SOLUTION: The method for forming a resist pattern includes an immersion exposure step and uses a positive resist composition, containing a resin component (A), an acid generator component (B) generating an acid by exposure, and an organic solvent (C). The component (A) exhibits an increase in alkali solubility led by the action of an acid and contains (a1) a structural unit derived from a (meth)acrylate ester having an acid dissociable, dissolution-suppressing group; (a2) a structural unit derived from a (meth)acrylate ester having a lactone unit; (a4) a structural unit derived from (meth)acrylate ester, having a polycyclic group but no structural units (a0), including a structural unit (a0-1) containing an anhydride of a dicarboxylic acid and a structural unit (a0-2) containing a phenolic hydroxyl group. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成抗蚀剂图案的方法，使用相对于浸渍光刻工艺中使用的溶剂是稳定的抗蚀剂组合物，并显示出优异的灵敏度和抗蚀剂图案。解决方案：形成抗蚀剂图案的方法包括浸渍曝光步骤，并使用含有树脂组分（A），通过曝光产生酸的酸产生剂组分（B）和有机溶剂（ C）。组分（A）表现出由酸的作用引起的碱溶解度的增加，并且含有（a1）衍生自具有酸解离，溶解抑制基团的（甲基）丙烯酸酯的结构单元; （a2）衍生自具有内酯单元的（甲基）丙烯酸酯的结构单元; （a4）具有多环基但不含结构单元（a0）的（甲基）丙烯酸酯衍生物的结构单元，包括含有二羧酸酐和结构单元（a0-2）的结构单元（a0-1））含有酚羟基。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2010008912A Resist composition, resist pattern forming method, novel compound, and acid generator 有权
标题翻译：抗菌组合物，抗性图案形成方法，新型化合物和酸发生器
公开(公告)号：JP2010008912A
公开(公告)日：2010-01-14
申请号：JP2008170812
申请日：2008-06-30
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： ISHIZUKA KEITA , UTSUMI YOSHIYUKI , HANEDA HIDEO , MATSUZAWA KENSUKE
IPC分类号： G03F7/004 , C08F220/10 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a novel compound useful as an acid generator for a resist composition, an acid generator using the compound, a resist composition containing the acid generator, and a resist pattern forming method using the resist composition. SOLUTION: The resist composition contains a base component (A) of which the solubility in an alkali developer changes by the action of an acid and an acid generator component (B) which generates an acid upon exposure to light, wherein the acid generator component (B) contains an acid generator (B1) comprising a compound represented by a general formula (b1-1) wherein Y 11 is 1-4C fluorinated alkyl; Y 12 is 1-4C fluorinated alkylene; Y 13 is a single bond or a divalent linking group, X 10 is a 3-30C cyclic hydrocarbon group, and A + is an organic cation. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种可用作抗蚀剂组合物的酸产生剂的新型化合物，使用该化合物的酸产生剂，含有酸产生剂的抗蚀剂组合物和使用该抗蚀剂组合物的抗蚀剂图案形成方法。解决方案：抗蚀剂组合物含有其中在碱性显影剂中的溶解度通过在暴露于光时产生酸的酸和酸产生剂组分（B）的作用而改变的碱组分（A），其中酸发生剂组分（B）含有一种酸产生剂（B1），其包含由通式（b1-1）表示的化合物，其中Y 11 为1-4C氟化烷基; Y 是1-4C氟化亚烷基; Y 13 是单键或二价连接基团，X 10 是3-30C环状烃基，A + 是有机物阳离子。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009242797A Norbornene polymer, its composition, and lithography method using the composition 有权
标题翻译： NORBORNENE聚合物，其组合物和使用组合物的平版印刷方法
公开(公告)号：JP2009242797A
公开(公告)日：2009-10-22
申请号：JP2009061467
申请日：2009-03-13
申请人： Promerus Llc , Tokyo Ohka Kogyo Co Ltd , プロメラス, エルエルシー , 東京応化工業株式会社
发明人： RHODES LARRY F , CHANG CHUN , KANDANARACHCHI PRAMOD , SEGER LAWRENCE D , ISHIZUKA KEITA , ENDO KOTARO , ANDO TOMOYUKI
IPC分类号： C08F32/08 , C08F34/00 , C09D123/24 , G03F7/039 , G03F7/11 , G03F7/38 , H01L21/027
CPC分类号： G03F7/11 , C08F232/08 , C08G61/06 , G03F7/0395 , G03F7/0397 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide non-self developing type and developing type norbornene polymers applicable to a liquid-immersion lithography process, a manufacturing methods for the polymers, a composition using the polymer, and the liquid-immersion lithography process using the composition. SOLUTION: The non-self developing type and developing type norbornene polymers useful for the liquid-immersion lithography process, the method for manufacturing such polymers, the composition using such a polymer, and the liquid-immersion lithography process using such a composition, are provided. In more details, there are provided: a norbornene polymer which is useful to form a developing layer and a topcoat layer to cover the developing layer in the liquid-immersion lithography process; and its process. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供适用于液浸光刻工艺的非自发显影型和显影型降冰片烯聚合物，聚合物的制造方法，使用该聚合物的组合物和使用液浸光刻工艺组成。解决方案：可用于液浸光刻工艺的非自显影型和显影型降冰片烯聚合物，制备这种聚合物的方法，使用这种聚合物的组合物和使用这种组合物的液浸光刻工艺，提供。更详细地，提供了：在液浸光刻工艺中可用于形成显影层和顶涂层以覆盖显影层的降冰片烯聚合物; 及其过程。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009134174A Protective film forming material and photoresist pattern forming method 审中-公开
标题翻译：保护膜形成材料和光电子图案形成方法
公开(公告)号：JP2009134174A
公开(公告)日：2009-06-18
申请号：JP2007311429
申请日：2007-11-30
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： ZENSEI SATOSHI , TAKAYAMA JUICHI , ISHIZUKA KEITA , YOKOI SHIGERU , YOKOYA JIRO
IPC分类号： G03F7/11 , C08F32/08 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a protective film forming material which has low environmental impact, substantially avoids damage to a photoresist pattern, and enables formation of a photoresist pattern having good rectangular geometry, and a photoresist pattern forming method using the protective film forming material.
SOLUTION: The protective film forming material for forming a protective film laid on a photoresist film includes (a) an alkali-soluble polymer and (b) a terpene-based solvent having an ether bond.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种环境影响低的保护膜形成材料，基本上避免了光致抗蚀剂图案的损坏，并且能够形成具有良好矩形几何形状的光致抗蚀剂图案，以及使用该保护膜的形成方法成膜材料。＆lt; P＆gt;解决方案：用于形成在光刻胶膜上形成保护膜的保护膜形成材料包括（a）碱溶性聚合物和（b）具有醚键的萜烯系溶剂。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009122623A Resist composition, method of forming resist pattern, novel compound, and acid generator 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案，新型化合物和酸产生剂的方法
公开(公告)号：JP2009122623A
公开(公告)日：2009-06-04
申请号：JP2008048103
申请日：2008-02-28
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： ISHIZUKA KEITA , UTSUMI YOSHIYUKI , KAWAKAMI AKINARI , SESHIMO TAKEHIRO , HANEDA HIDEO
IPC分类号： G03F7/004 , C08F220/18 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a novel compound useful as an acid generator for a resist composition, an acid generator, a resist composition, and a method of forming a resist pattern. SOLUTION: The compound is represented by general formula (B1-1). The acid generator is composed of the compound. The resist composition contains an acid generator composed of the compound. In the formula, R x represents a hydrocarbon group which may contain a substituent group; Q 1 represents a 1-12C alkylene group which may contain a substituent group, or a single bond; n represents 0 or 1; Y 1 represents a 1-4C alkylene group or a 1-4C fluorinated alkylene group; and A + represents an organic cation which contains a nitrogen atom. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供可用作抗蚀剂组合物的酸产生剂，酸产生剂，抗蚀剂组合物和形成抗蚀剂图案的方法的新型化合物。化合物由通式（B1-1）表示。酸发生剂由化合物组成。抗蚀剂组合物含有由该化合物组成的酸发生剂。在该式中，R“X”表示可以含有取代基的烃基; Q 1 表示可以含有取代基或单键的1-12C亚烷基; n表示0或1; Y 1 表示1-4C亚烷基或1-4C氟化亚烷基; 并且A + 表示含有氮原子的有机阳离子。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2009040761A New compound, method for producing the same, acid-generating agent, resist composition, and method for forming resist pattern 有权
标题翻译：新化合物，其生产方法，酸生成剂，耐蚀组合物和形成耐蚀图案的方法
公开(公告)号：JP2009040761A
公开(公告)日：2009-02-26
申请号：JP2007257492
申请日：2007-10-01
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： HANEDA HIDEO , IWAI TAKESHI , SESHIMO TAKEHIRO , KAWAKAMI AKINARI , ISHIZUKA KEITA
IPC分类号： C07D333/46 , C07C309/06 , C07C309/20 , C07C309/24 , C07C381/12 , C07D335/02 , G03F7/004 , G03F7/039
摘要： PROBLEM TO BE SOLVED: To provide a new compound useful as an acid-generating agent used for a resist composition, a method for producing the same, a compound useful as a precursor of the above compound, a method for producing the same, an acid-developing agent, a resist composition and a method for forming a resist pattern. SOLUTION: The compound is expressed by general formula (b1-1) [wherein, A is a divalent group forming a 3 to 7-membered ring-structured ring together with an S atom bonded with the A, and the ring may have a substituent; R 2 is an aromatic group which may have a substituent, a 1-10C linear or branched alkyl which may have a substituent or a 2-10C linear or branched alkenyl which may have a substituent; (n) is 0 or 1; and Y 1 is a 1-4C alkylene which may be substituted with F]. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供可用作抗蚀剂组合物中的酸产生剂的新化合物，其制备方法，可用作上述化合物的前体的化合物，其制备方法，酸显影剂，抗蚀剂组合物和形成抗蚀剂图案的方法。解决方案：化合物由通式（b1-1）表示[其中，A是与A键合的S原子与3至7元环结构的环一起形成的二价基团，环可以具有取代基; R 2是可以具有取代基的芳基，可以具有取代基的1-10C直链或支链烷基或可具有取代基的2-10C直链或支链烯基; （n）为0或1; 并且Y 1 是可以被F]取代的1-4C亚烷基。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2005284238A Method for forming positive type resist composition for immersion exposure and resist pattern 有权
标题翻译：用于形成浸渍曝光和耐蚀图案的正型耐腐蚀组合物的方法
公开(公告)号：JP2005284238A
公开(公告)日：2005-10-13
申请号：JP2004170424
申请日：2004-06-08
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： ISHIZUKA KEITA , ENDO KOTARO
IPC分类号： G03F7/039 , C08F220/10 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0046 , C08F220/18 , C08F220/28 , G03F7/0397 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a positive type resist composition for immersion exposure and a resist pattern, particularly the positive type resist composition for immersion exposure having a tolerance to liquid immersion superior in a water cutoff performance, and the resist pattern using the resist composition. SOLUTION: The positive type resist composition for immersion exposure contains (A) a resin component of which alkali solubility is increased by the action of acid, and (B) an acid generating agent that generates acid by exposure. The resist composition is characterized in that the resin component (A) contains at least acrylic ester unit (a1) and (meta) acrylic ester unit (a2) having an acid dissociative solution inhibition group, and that the unit (a1) is composed of a cyclic group coupled with the acrylic ester of the unit (a1) and a fluorinated organic group of a particular structure coupled with the cyclic group. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于形成浸渍曝光用正型抗蚀剂组合物和抗蚀剂图案的方法，特别是具有耐水分性能优异的浸渍耐受性的浸渍曝光用正型抗蚀剂组合物，以及使用抗蚀剂组合物的抗蚀剂图案。解决方案：用于浸渍曝光的正型抗蚀剂组合物含有（A）通过酸的作用使碱溶解度增加的树脂成分，（B）通过曝光产生酸的酸产生剂。抗蚀剂组合物的特征在于，树脂成分（A）至少含有具有酸解离溶液抑制基团的丙烯酸酯单元（a1）和（间）丙烯酸酯单元（a2），单元（a1）由与单元（a1）的丙烯酸酯和与环状基团偶联的特定结构的氟化有机基团连接的环状基团。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2005157259A Resist upper layer film forming material and resist pattern forming method using the same 有权
标题翻译：使用其形成材料和电阻形成方法的上层膜
公开(公告)号：JP2005157259A
公开(公告)日：2005-06-16
申请号：JP2004132080
申请日：2004-04-27
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： WAKIYA KAZUMASA , ISHIZUKA KEITA , ENDO KOTARO
IPC分类号： G03F7/11 , C08K5/43 , C08K5/46 , C08L101/12 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist upper layer film forming material which contains a fluoro-surfactant free of environmental problem and easy to be handled, and shows the same effect as a case using C 8 F 17 SO 3 H (PFOS). SOLUTION: The resist upper layer film forming material comprises at least a selectively soluble resin component and a fluorocarbon compound. A fluorocarbon compound of the formula (1): (C n F 2n+1 SO 2 ) 2 NH (where m is an integer of 1-5) or the formula (2): C m F 2m+1 COOH (where m is an integer of 10-15) or another specified fluorocarbon compound is preferably used as the above fluorocarbon compound. COPYRIGHT: (C)2005,JPO&NCIPI

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