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    • 97. 发明申请
    • RECEIVER CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS
    • 半导体存储器接收器电路
    • US20090059703A1
    • 2009-03-05
    • US12172108
    • 2008-07-11
    • Tae Jin HwangYong Ju KimHee Woong SongIc Su OhHyung Soo KimHae Rang ChoiJi Wang Lee
    • Tae Jin HwangYong Ju KimHee Woong SongIc Su OhHyung Soo KimHae Rang ChoiJi Wang Lee
    • G11C7/00
    • G11C7/1078G11C7/1084G11C7/1087G11C7/1093G11C7/22G11C7/222
    • A receiver circuit is described herein, comprising a first data determining unit configured to detect and amplify a voltage level difference between first and second external data and generate first and second sense signals and to generate first internal data in response to the first and second sense signals, a first offset control unit configured to generate first and second offset signals in response to the first and second sense signals, the first and second offset signals swinging between a maximum voltage level and a minimum voltage level determined based on a first code, a second data determining unit configured to detect and amplify the voltage level difference between the first and second external data to generate third and fourth sense signals and to generate second internal data in response to the third and fourth sense signals; and a second offset control unit for generating third and fourth offset signals in response to the third and fourth sense signals, the third and fourth offset signals swinging between a maximum voltage level and a minimum voltage level determined based on a second code, wherein the first data determining unit is configured to determine setup time and hold time of the first internal data in response to the third and fourth offset signals, and wherein the second data determining unit is configured to determine setup time and hold time of the second internal data in response to the first and second offset signals.
    • 本文描述了一种接收器电路,包括:第一数据确定单元,被配置为检测和放大第一和第二外部数据之间的电压电平差,并产生第一和第二感测信号,并响应于第一和第二感测信号产生第一内部数据 第一偏移控制单元,被配置为响应于第一和第二感测信号产生第一和第二偏移信号,第一和第二偏移信号在基于第一代码确定的最大电压电平和最小电压电平之间摆动,第二偏移控制单元 数据确定单元,被配置为检测和放大第一和第二外部数据之间的电压电平差,以产生第三和第四感测信号,并响应于第三和第四感测信号产生第二内部数据; 以及第二偏移控制单元,用于响应于第三和第四感测信号产生第三和第四偏移信号,第三和第四偏移信号在基于第二代码确定的最大电压电平和最小电压电平之间摆动,其中第一和第二偏移信号 数据确定单元被配置为响应于第三和第四偏移信号来确定第一内部数据的建立时间和保持时间,并且其中第二数据确定单元被配置为响应于确定第二内部数据的建立时间和保持时间 到第一和第二偏移信号。
    • 100. 发明授权
    • Delay locked loop
    • 延迟锁定环路
    • US08319535B2
    • 2012-11-27
    • US13111568
    • 2011-05-19
    • Jae-Min JangYong-Ju KimHae-Rang Choi
    • Jae-Min JangYong-Ju KimHae-Rang Choi
    • H03L7/06
    • H03L7/087G11C7/222H03L7/0814H03L7/0816
    • A DLL circuit includes a common delay line configured to generate a delay locked clock by selectively delaying a source clock by one or more unit delays in response to a first delay control code or a second delay control code, a clock cycle detector configured to compare a phase of the source clock with a phase of the delay locked clock in a cycle detection mode and generate the first delay control code corresponding to a delay amount of a cycle of the source clock based on a result of comparing the phases of the source and delay locked clocks, a feedback delay configured to delay the delay locked clock and output a feedback clock, and a delay amount controller configured to compare the phase of the source clock with a phase of the feedback clock in a delay locking mode and change the second delay control code based on a result of comparing the source and feedback clocks.
    • DLL电路包括公共延迟线,其配置为通过响应于第一延迟控制代码或第二延迟控制代码选择性地将源时钟延迟一个或多个单位延迟来产生延迟锁定时钟,时钟周期检测器被配置为 源时钟的相位以延迟锁定时钟的相位处于周期检测模式,并且基于比较源极和延迟的相位的结果生成与源时钟的周期的延迟量相对应的第一延迟控制代码 锁定时钟,被配置为延迟延迟锁定时钟并输出反馈时钟的反馈延迟,以及延迟量控制器,被配置为将延迟锁定模式中的源时钟的相位与反馈时钟的相位进行比较,并且改变第二延迟 基于比较源和反馈时钟的结果的控制代码。