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    • 97. 发明申请
    • System and Method for Measuring Interferences
    • 测量干扰的系统和方法
    • US20090033916A1
    • 2009-02-05
    • US11833440
    • 2007-08-03
    • I-Jen HsuCheng-Chung Lai
    • I-Jen HsuCheng-Chung Lai
    • G01N21/00G01B11/02
    • G01B9/02027G01B9/02007G01B2290/40G01B2290/45G01B2290/70
    • A system and method for measuring interferences are disclosed. The system is based on the concept of a composite interferometer. The sample is measured while a simultaneous compensation of the phase deviation due to the relative displacement of the optical delay component between the measurements at different pixels of the sample is performed. In the application of profilometry, the information of the surface profile of a material is obtained from the phase shift of the interference signal. By using the proposed compensation mechanism, an axial resolution at nanometer scale can be achieved. For the measurement of a thin film, a polarized probe beam is oblique incident on the sample. The system can perform a simultaneous measurement of the refractive index and the thickness of the thin film. From the ratio of the intensities of the interferograms of TE and TM waves as well as the phase shifts of the interferograms, the refractive index and the thickness of the thin film can then be obtained simultaneously.
    • 公开了一种用于测量干扰的系统和方法。 该系统是基于复合干涉仪的概念。 测量样本,同时补偿由于样品的不同像素处的测量之间的光学延迟分量的相对位移引起的相位偏差。 在轮廓测量的应用中,从干涉信号的相移中获得材料的表面轮廓的信息。 通过使用提出的补偿机制,可以实现纳米尺度的轴向分辨率。 对于薄膜的测量,偏振探测光束倾斜入射到样品上。 该系统可以同时测量薄膜的折射率和厚度。 从TE和TM波的干涉图的强度比以及干涉图的相移的比例可以同时获得薄膜的折射率和厚度。
    • 98. 发明申请
    • Multi-Ion Potential Sensor and Fabrication thereof
    • 多离子电势传感器及其制作
    • US20090021263A1
    • 2009-01-22
    • US11778677
    • 2007-07-17
    • Shen-Kan HsiungJung-Chuan ChouTai-Ping SunNien-Hsuan ChouShien-I Wei
    • Shen-Kan HsiungJung-Chuan ChouTai-Ping SunNien-Hsuan ChouShien-I Wei
    • G01N27/00B05D5/12
    • G01N27/3271
    • A multi-ion potential sensor is disclosed. The multi-ion potential sensor comprises a substrate, a conductive layer, an isolation layer, a tin oxide (SnO2) layer and a selective layer. The conductive layer comprises a plurality of independent conductive areas, wherein every conductive area comprises a readout area, a transmissive area and a sensing area, and the transmissive area of every conductive area is packaged by the isolation layer. The tin oxide layer comprises a plurality of independent tin oxide areas, wherein every tin oxide area is deposited on the sensing area, and the selective layer comprises a plurality of independent selective areas, wherein every selective area is set on the tin oxide area. The multi-ion potential sensor has various advantages, such as good sensitivity, low cost, simplicity, disposable, portable and data acquisition by a computer for different applications.
    • 公开了一种多离子电位传感器。 多离子电位传感器包括衬底,导电层,隔离层,氧化锡(SnO 2)层和选择层。 导电层包括多个独立的导电区域,其中每个导电区域包括读出区域,透射区域和感测区域,并且每个导电区域的透射区域被隔离层封装。 锡氧化物层包括多个独立的氧化锡区域,其中每个氧化锡区域沉积在感测区域上,并且选择层包括多个独立的选择区域,其中每个选择区域设置在氧化锡区域上。 多离子电位传感器具有各种优点,例如灵敏度高,成本低,简便,一次性,便携式和数据采集的计算机不同应用。