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91. 发明授权

US07192802B2 ALD ZnO seed layer for deposition of ZnO nanostructures on a silicon substrate 失效
标题翻译： ALD ZnO种子层，用于在硅衬底上沉积ZnO纳米结构
公开(公告)号：US07192802B2
公开(公告)日：2007-03-20
申请号：US10976594
申请日：2004-10-29
申请人： Lisa H. Stecker , John F. Conley, Jr.
发明人： Lisa H. Stecker , John F. Conley, Jr.
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/16 , C30B29/605 , H01L21/02472 , H01L21/02513 , H01L21/02554 , H01L21/02603 , H01L21/02628
摘要： Zinc-oxide nanostructures are grown without using a metal catalyst by forming a seed layer of polycrystalline zinc oxide on a surface of a substrate. The seed layer can be formed by an atomic layer deposition technique. Growth of at least one zinc-oxide nanostructure is induced on the seed layer. The seed layer can alternatively be formed by using a spin-on technique, such as a metal organic deposition technique, a spray pyrolisis technique, an RF sputtering technique or by oxidation of the seed layer.
摘要翻译：通过在基材的表面上形成多晶氧化锌的晶种层，生长氧化锌纳米结构体而不使用金属催化剂。种子层可以通过原子层沉积技术形成。在种子层上诱导至少一种氧化锌纳米结构的生长。种子层可以替代地通过使用旋涂技术形成，例如金属有机沉积技术，喷雾热解技术，RF溅射技术或种子层的氧化。

92. 发明授权

US07189430B2 Directed assembly of highly-organized carbon nanotube architectures 有权
标题翻译：高度组织的碳纳米管结构的定向组装
公开(公告)号：US07189430B2
公开(公告)日：2007-03-13
申请号：US10361640
申请日：2003-02-11
申请人： Pulickel M. Ajayan , Ramanath Ganapathiraman , Anyuan Cao
发明人： Pulickel M. Ajayan , Ramanath Ganapathiraman , Anyuan Cao
IPC分类号： C23C16/00 , B05D5/00 , B05D1/32
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/16 , C01B2202/08 , C04B35/14 , C04B35/62802 , C04B35/62839 , C04B2235/3206 , C04B2235/3217 , C04B2235/3418 , C04B2235/5264 , C04B2235/528 , C04B2235/5288 , C30B29/605 , C30B33/00 , H01M4/583 , Y10T428/139
摘要： A method of controllably aligning carbon nanotubes to a template structure to fabricate a variety of carbon nanotube containing structures and devices having desired characteristics is provided. The method allows simultaneous, selective growth of both vertically and horizontally controllably aligned nanotubes on the template structure but not on a substrate in a single process step.
摘要翻译：提供了一种可控地将碳纳米管与模板结构对准以制造各种含碳纳米管的结构和具有期望特性的器件的方法。该方法允许在单一工艺步骤中在模板结构上的垂直和水平可控排列的纳米管的同时，选择性生长，但不在基板上。

93. 发明申请

US20070032052A1 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices 审中-公开
公开(公告)号：US20070032052A1
公开(公告)日：2007-02-08
申请号：US11543746
申请日：2006-10-04
申请人： Charles Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
发明人： Charles Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

94. 发明申请

US20070026645A1 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices 有权
公开(公告)号：US20070026645A1
公开(公告)日：2007-02-01
申请号：US11543326
申请日：2006-10-04
申请人： Charles Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
发明人： Charles Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
IPC分类号： H01L21/20
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

95. 发明申请

US20070004225A1 Low-temperature catalyzed formation of segmented nanowire of dielectric material 审中-公开
标题翻译：介电材料的分段纳米线的低温催化形成
公开(公告)号：US20070004225A1
公开(公告)日：2007-01-04
申请号：US11174076
申请日：2005-06-30
申请人： Donghui Lu , Zhan Chen
发明人： Donghui Lu , Zhan Chen
IPC分类号： H01L21/469
CPC分类号： C30B25/005 , C30B11/12 , C30B25/105 , C30B29/38 , C30B29/605
摘要： The present invention discloses a method of forming a segmented nanowire including: providing a substrate; pre-cleaning the substrate; pre-treating the substrate; forming and placing a catalyst over the substrate; and forming the segmented nanowire over the catalyst with recurring pulses of plasma-enhanced chemical vapor deposition (PECVD) of a dielectric material.
摘要翻译：本发明公开了一种形成分段纳米线的方法，包括：提供基底; 预清洗基材; 预处理底物; 在衬底上形成和放置催化剂; 以及通过电介质材料的等离子体增强化学气相沉积（PECVD）的循环脉冲在催化剂上形成分段纳米线。

96. 发明授权

US07153703B2 Synthesis of stable colloidal nanocrystals using organic dendrons 有权
标题翻译：使用有机树突的合成稳定的胶体纳米晶体
公开(公告)号：US07153703B2
公开(公告)日：2006-12-26
申请号：US10146420
申请日：2002-05-13
申请人： Xiaogang Peng , Haiyan Chen
发明人： Xiaogang Peng , Haiyan Chen
IPC分类号： G01N33/551
CPC分类号： C01B19/007 , C30B5/00 , C30B29/605 , C30B33/00
摘要： A method for stabilizing colloidal suspensions of nanocrystals or nanoparticles in a solvent or solid matrix is provided by coating the nanocrystals with bulky organic molecules, specifically dendrons. By coating nanocrystals with a dense organic dendron coat and further cross-linking the dendron ligands, oxidation of the nanocrystals and dissociation of the ligands are avoided. This invention allows nanocrystals to undergo rigorous purification and processing. It may regularly be applied to a variety of nanocrystals.
摘要翻译：通过用庞大的有机分子（特别是树突）涂覆纳米晶体，提供了稳定溶剂或固体基质中纳米晶体或纳米颗粒的胶体悬浮液的方法。通过用致密的有机树突涂层涂覆纳米晶体并进一步交联树枝状配体，避免了纳米晶体的氧化和配体的解离。本发明允许纳米晶体经过严格的纯化和处理。它可以经常应用于各种纳米晶体。

97. 发明申请

US20060269669A1 Apparatus and method for making carbon nanotube array 有权
标题翻译：制造碳纳米管阵列的装置和方法
公开(公告)号：US20060269669A1
公开(公告)日：2006-11-30
申请号：US11371997
申请日：2006-03-08
申请人： Kai-Li Jiang , Kai Liu , Shou-Shan Fan
发明人： Kai-Li Jiang , Kai Liu , Shou-Shan Fan
IPC分类号： C23C16/00
CPC分类号： C23C16/0281 , C23C16/26 , C23C16/448 , C30B25/02 , C30B29/02 , C30B29/605 , Y10S427/102
摘要： An apparatus for making an array of carbon nanotubes includes a reaction chamber with a gas inlet and a gas outlet; a quartz boat disposed in the reaction chamber; a substrate with a surface deposited with a film of first catalyst, the substrate being disposed in the quartz boat; and a second catalyst disposed in the quartz beside the substrate. A method for making an array of carbon nanotubes, comprising the steps of: (a) providing a substrate with a surface deposited with a film of first catalyst; (b) disposing a second catalyst beside the substrate to produce small amounts of hydrogen gas which flows to the first catalyst; (c) introducing a carrier gas and a carbon source gas flowing from the second catalyst to the first catalyst at a predetermined temperature; and (d) growing an array of carbon nanotubes extending from the substrate.
摘要翻译：制造碳纳米管阵列的装置包括具有气体入口和气体出口的反应室; 设置在反应室中的石英舟; 具有表面沉积有第一催化剂膜的基板，所述基板设置在所述石英舟中; 以及设置在基板旁边的石英中的第二催化剂。一种制备碳纳米管阵列的方法，包括以下步骤：（a）向基材提供沉积有第一催化剂膜的表面; （b）在基板旁边设置第二催化剂以产生流过第一催化剂的少量氢气; （c）在预定温度下引入从第二催化剂流向第一催化剂的载气和碳源气体; 和（d）生长从衬底延伸的碳纳米管阵列。

98. 发明授权

US07135057B2 Gas storage medium and methods 失效
标题翻译：储气介质及方法
公开(公告)号：US07135057B2
公开(公告)日：2006-11-14
申请号：US10417688
申请日：2003-04-16
申请人： Pavel Kornilovich
发明人： Pavel Kornilovich
IPC分类号： C01B3/00 , B01J20/22 , F17C11/00
CPC分类号： B82Y30/00 , B01J20/10 , B01J20/28007 , B01J20/28023 , B01J20/3204 , B01J20/3246 , B01J20/3257 , B01J20/3285 , B01J20/3293 , C01B3/001 , C01B3/0015 , C01B33/02 , C30B29/06 , C30B29/605 , C30B33/00 , F17C11/005 , Y02E60/321 , Y02E60/328 , Y10S502/526 , Y10T428/2938 , Y10T428/298
摘要： A storage medium for gas molecules has a nanowire core and a number of organic molecules attached to the exterior surface of the nanowire. The organic molecules attached to the exterior of the nanowire are adapted to releasably hold gas molecules. Methods for making and using the invention, including the use of a silicon nanowire, are disclosed.
摘要翻译：用于气体分子的存储介质具有纳米线芯和附着到纳米线外表面的多个有机分子。附着在纳米线外部的有机分子适于可释放地保持气体分子。公开了制造和使用本发明的方法，包括使用硅纳米线。

99. 发明授权

US07129554B2 Nanosensors 有权
标题翻译：纳米传感器
公开(公告)号：US07129554B2
公开(公告)日：2006-10-31
申请号：US10020004
申请日：2001-12-11
申请人： Charles M. Lieber , Hongkun Park , Qingqiao Wei , Yi Cui , Wenjie Liang
发明人： Charles M. Lieber , Hongkun Park , Qingqiao Wei , Yi Cui , Wenjie Liang
IPC分类号： H01L27/14 , H01L29/82 , H01L29/84
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G01N2610/00 , G11C13/0014 , G11C13/0019 , G11C13/04 , G11C2213/17 , G11C2213/81 , H01L23/53276 , H01L29/0669 , H01L29/0673 , H01L29/16 , H01L29/1602 , H01L29/1606 , H01L29/207 , H01L29/267 , H01L51/0048 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , Y10S977/762 , Y10S977/957 , H01L2924/00
摘要： Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
摘要翻译：描述由纳米线组成的电气装置及其制造和使用的方法。纳米线可以是纳米管，优选单壁碳纳米管。它们可以使用化学图案化的表面，通过化学气相沉积方向布置在横杆阵列中。化学气相沉积也可以用于在引导电场的情况下在阵列中形成纳米管，任选地与自组装单层图案组合。描述双稳态设备。

100. 发明授权

US07129154B2 Method of growing semiconductor nanowires with uniform cross-sectional area using chemical vapor deposition 失效
标题翻译：使用化学气相沉积生长具有均匀横截面积的半导体纳米线的方法
公开(公告)号：US07129154B2
公开(公告)日：2006-10-31
申请号：US10857191
申请日：2004-05-28
申请人： Sung Soo Yi
发明人： Sung Soo Yi
IPC分类号： H01L21/36 , H01L21/20
CPC分类号： B82Y30/00 , B82Y10/00 , C30B11/12 , C30B29/06 , C30B29/42 , C30B29/605 , H01L21/0237 , H01L21/02488 , H01L21/02543 , H01L21/02546 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , Y10S977/762 , Y10S977/818
摘要： A nanowire of a semiconductor material and having a uniform cross-sectional area along its length is grown using a chemical vapor deposition process. In the method, a substrate is provided, a catalyst nanoparticle is deposited on the substrate, a gaseous precursor mixture comprising a constituent element of the semiconductor material is passed over the substrate, and adatoms of the constituent element are removed from a lateral surface of the nanowire during the passing of the precursor mixture. The removing comprises passing over the substrate a gaseous etchant that forms a volatile compound with the adatoms, the gaseous etchant comprising a halogenated hydrocarbon. Removing the adatoms of the constituent element before such adatoms are incorporated into the nanowire prevents such adatoms from accumulating on the lateral surface of the nanowire and allows the nanowire to grow with a uniform cross-sectional area along its length.
摘要翻译：使用化学气相沉积工艺生长半导体材料的纳米线并沿其长度具有均匀的横截面积。在该方法中，提供衬底，催化剂纳米颗粒沉积在衬底上，包含半导体材料的构成元素的气态前体混合物通过衬底，并且构成元素的原子从侧面纳米线在前体混合物通过期间。去除包括使基板上的气溶胶与吸附原子一起形成挥发性化合物，气态蚀刻剂包括卤代烃。在将这些吸附原子并入纳米线之前去除构成元素的吸附原子可以防止这种吸附原子积聚在纳米线的侧表面上，并允许纳米线沿着其长度以均匀的横截面积生长。

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