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1. 发明申请

US20180106682A1 FABRICATION METHOD FOR MICROMECHANICAL SENSORS 审中-公开
公开(公告)号：US20180106682A1
公开(公告)日：2018-04-19
申请号：US15836535
申请日：2017-12-08
申请人： MP High Tech Solutions Pty Ltd
发明人： Marek Steffanson
IPC分类号： G01J5/10 , B81C1/00
CPC分类号： G01J5/10 , B81C1/00142 , B81C1/0019 , B81C2201/0132 , G01J5/045 , G01J5/0806 , G01J5/40
摘要： In one approach, a method of fabricating radiation detection devices includes: forming a structural layer overlying a frontside of a substrate; forming a metallic layer overlying the structural layer; releasing each of a plurality of devices on the substrate by etching a backside of the substrate, wherein each device comprises a plate and legs attached to the plate, the legs comprising at least a portion of the metallic layer; and sealing each of the plurality of devices, the sealing comprising: attaching a transparent cavity cap to the frontside of the substrate; and attaching a radiation-transparent substrate to the backside of the substrate.

2. 发明授权

US09919921B2 Methods of preparing nanodevices 有权
公开(公告)号：US09919921B2
公开(公告)日：2018-03-20
申请号：US14604896
申请日：2015-01-26
申请人： The Regents of the University of Colorado, a body corporate , DRS Network & Imaging Systems, LLC
发明人： Victor M. Bright , Steven George , Joseph J. Brown , Nathan T. Eigenfeld , Jason M. Gray , George Dee Skidmore
IPC分类号： H01L21/20 , B82B3/00 , B81C1/00 , B05D3/14 , B05D7/24 , B82B1/00 , C23C16/01 , C23C16/02 , C23C16/14 , C23C16/40 , C23C16/455 , C23C16/56 , B82Y30/00
CPC分类号： B82B3/008 , B05D3/145 , B05D7/24 , B81C1/0019 , B81C1/00492 , B82B1/005 , B82Y30/00 , C23C16/01 , C23C16/0245 , C23C16/14 , C23C16/403 , C23C16/45525 , C23C16/45553 , C23C16/45555 , C23C16/56 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to novel nano- and micro-electromechanical devices and novel methods of preparing them. In one aspect, the invention includes methods of preparing a nanodevice. In certain embodiments, the methods comprise coating a polymer layer with a first at least one thin solid material layer using atomic layer deposition (ALD), thus forming an ALD-generated layer. In other embodiments, the methods comprise patterning the first at least one thin solid material layer to form a nanodevice. In yet other embodiments, the methods comprise releasing the nanodevice from the polymer layer.

3. 发明授权

US09604845B2 Methods of forming microstructure and electronic device having moveable component 有权
公开(公告)号：US09604845B2
公开(公告)日：2017-03-28
申请号：US14873091
申请日：2015-10-01
申请人： STMicroelectronics, Inc.
发明人： Ming Fang
IPC分类号： H01L21/00 , B81C1/00 , B81B7/00
CPC分类号： B81C1/00666 , B81B7/0029 , B81B2203/0181 , B81C1/0019 , B81C2201/0169 , B81C2201/112
摘要： A method of manufacturing microstructures, such as MEMS or NEMS devices, including forming a protective layer on a surface of a moveable component of the microstructure. For example, a silicide layer may be formed on a portion of at least four different surfaces of a poly-silicon mass that is moveable with respect to a substrate of the microstructure. The process may be self-aligning.

4. 发明授权

US09511995B2 Method and apparatus for building three-dimensional MEMS elements 有权
公开(公告)号：US09511995B2
公开(公告)日：2016-12-06
申请号：US13397230
申请日：2012-02-15
申请人： Brian Lee Wardle , Fabio Ferruccio Fachin , Stefan Nikles , Mathew Varghese
发明人： Brian Lee Wardle , Fabio Ferruccio Fachin , Stefan Nikles , Mathew Varghese
IPC分类号： B81C1/00 , G01P15/08
CPC分类号： B05D3/10 , B81B2201/0235 , B81B2203/0109 , B81C1/00007 , B81C1/0019 , G01P15/0802 , Y10T428/24612
摘要： The disclosure generally relates to method and apparatus for forming three-dimensional MEMS. More specifically, the disclosure relates to a method of controlling out-of-plane buckling in microstructural devices so as to create micro-structures with out-of-plane dimensions which are 1×, 5×, 10×, 100× or 500× the film's thickness or above the surface of the wafer. An exemplary device formed according to the disclosed principles, includes a three dimensional accelerometer having microbridges extending both above and below the wafer surface.

5. 发明申请

US20160096729A1 Photolithography Structures and Methods 审中-公开
标题翻译：光刻结构与方法
公开(公告)号：US20160096729A1
公开(公告)日：2016-04-07
申请号：US14508342
申请日：2014-10-07
申请人： Pixtronix, Inc.
发明人： Javier Villarreal , Timothy Brosnihan , Chin-Yuan Ho , Hung-Chien Lin
IPC分类号： B81C1/00 , B81B7/02 , G06T1/20 , B81B3/00
CPC分类号： G06T1/20 , B81B2201/045 , B81B2201/047 , B81B2203/0307 , B81C1/0019 , B81C2201/0108 , B81C2201/0132 , B81C2201/014 , B81C2201/0181 , G02B26/02
摘要： This disclosure provides systems, methods and apparatus including processes that use two layers of resist, with a layer of etch stop material in between. The two layers of resist may be etched in separate processes to form devices having vias with sidewalls that extend through both layers of resist
摘要翻译：本公开提供了包括使用两层抗蚀剂的工艺的系统，方法和设备，其间具有一层蚀刻停止材料。可以在单独的工艺中蚀刻两层抗蚀剂，以形成具有延伸穿过两层抗蚀剂的侧壁的通路的器件

6. 发明授权

US09217755B2 Method and apparatus for building three-dimensional MEMS elements 有权
标题翻译：用于构建三维MEMS元件的方法和装置
公开(公告)号：US09217755B2
公开(公告)日：2015-12-22
申请号：US13397318
申请日：2012-02-15
申请人： Brian Lee Wardle , Fabio Ferruccio Fachin , Stefan Nikles , Mathew Varghese
发明人： Brian Lee Wardle , Fabio Ferruccio Fachin , Stefan Nikles , Mathew Varghese
IPC分类号： H01L21/00 , G01P15/00 , B81C1/00 , G01P15/08
CPC分类号： B81C1/00007 , B81B2201/0207 , B81B2201/0235 , B81C1/00142 , B81C1/00158 , B81C1/0019 , G01P15/00 , G01P15/008 , G01P15/0802 , Y10T29/49117 , Y10T29/49155
摘要： The disclosure generally relates to method and apparatus for forming three-dimensional MEMS. More specifically, the disclosure relates to a method of controlling out-of-plane buckling in microstructural devices so as to create micro-structures with out-of-plane dimensions which are 1×, 5×, 10×, 100× or 500× the film's thickness or above the surface of the wafer. An exemplary device formed according to the disclosed principles, includes a three dimensional accelerometer having microbridges extending both above and below the wafer surface.
摘要翻译：本发明一般涉及用于形成三维MEMS的方法和装置。更具体地说，本公开涉及一种控制微结构装置中的平面外屈曲的方法，以便产生具有1×，5×，10×，100×或500× 膜的厚度或晶片表面之上。根据所公开的原理形成的示例性装置包括具有在晶片表面上方和下方延伸的微桥的三维加速度计。

7. 发明申请

US20150353342A1 MEMS and Method for Forming the Same 有权
标题翻译： MEMS及其形成方法
公开(公告)号：US20150353342A1
公开(公告)日：2015-12-10
申请号：US13860759
申请日：2013-04-11
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuei-Sung Chang , Ting-Hau Wu
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81B3/001 , B81B3/0013 , B81B3/0016 , B81C1/00134 , B81C1/00142 , B81C1/0015 , B81C1/0019 , B81C1/00468 , B81C1/00484 , B81C1/00936 , B81C1/0096 , H01L2924/1461
摘要： A method and apparatus are provided to prevent or reduce stiction of a MEMS device. The MEMS device may include a protrusion extending from a surface of the MEMS device. During manufacture, the protrusion may be connected across an opening in the MEMS device to a sidewall of the substrate. Before manufacture of the MEMS device is completed, at least a portion of the protrusion connecting the MEMS device to the substrate may be removed. During operation, the protrusion may provide stiction prevention or reduction for the surface from which the first protrusion may extend. A plurality of protrusions may be formed along a plurality of surfaces for the MEMS device to prevent or reduce stiction along the corresponding surfaces. Protrusions may also be formed on devices surrounding or encapsulating the MEMS device to prevent or reduce stiction of the MEMS device to the surrounding or encapsulating devices.
摘要翻译：提供了一种方法和装置来防止或减少MEMS装置的静摩擦。 MEMS器件可以包括从MEMS器件的表面延伸的突起。在制造期间，突起可以跨过MEMS器件中的开口连接到衬底的侧壁。在完成MEMS装置的制造之前，可以将连接MEMS装置的基板的突起的至少一部分去除。在操作期间，突起可以为第一突起可以延伸的表面提供防止或减小静止。可以沿着用于MEMS器件的多个表面形成多个突起，以防止或减小沿着相应表面的粘连。也可以在围绕或封装MEMS器件的器件上形成突起，以防止或降低MEMS器件对周围或封装器件的粘连。

8. 发明授权

US09193580B1 Barium titanate nanowire their arrays and array based devices 有权
标题翻译：钛酸钡纳米线阵列和阵列设备
公开(公告)号：US09193580B1
公开(公告)日：2015-11-24
申请号：US14531843
申请日：2014-11-03
申请人： UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
发明人： Henry A. Sodano , Aneesh K. Venkata
IPC分类号： B81B3/00 , B81C1/00 , B81C3/00
CPC分类号： B81B3/0021 , B81B2201/032 , B81C1/0019 , B81C3/005 , G01P15/0922 , H01L41/1136 , H01L41/31 , H02N2/18
摘要： A nano-electromechanical system comprises piezoelectric vertically aligned BaTiO3 nanowire arrays for energy-harvesting applications, sensors, and other applications. The aligned piezoelectric nanowire arrays provide highly accurate nano-electromechanical system-based dynamic sensor with a wide operating bandwidth and unity coherence and energy harvesters at low frequencies. The growth of vertically aligned (B45-mm long) barium titanate nanowire arrays is realized through a hydrothermal synthesis.
摘要翻译：纳米机电系统包括用于能量收集应用，传感器和其它应用的压电垂直排列的BaTiO3纳米线阵列。对准的压电纳米线阵列提供高精度的基于纳米机电系统的动态传感器，具有宽的工作带宽和低频的单位相干和能量收集器。通过水热合成实现垂直取向（B45-mm）钛酸钡纳米线阵列的生长。

9. 发明申请

US20150287607A1 METHOD OF MAKING FLEXIBLE, FOLDABLE, AND STRETCHABLE DEVICES 有权
标题翻译：制造柔性，可折叠和可拉伸装置的方法
公开(公告)号：US20150287607A1
公开(公告)日：2015-10-08
申请号：US14418203
申请日：2013-07-31
申请人： Wayne State University
发明人： Yong Xu , Hongen Tu , Eric GR Kim , Jessin K. John
IPC分类号： H01L21/3065 , H01L21/56
CPC分类号： H01L21/3065 , B81C1/0019 , G01L19/0092 , G01L2009/0069 , H01L21/3081 , H01L21/56 , H01L27/1218 , H01L27/1262 , H01L29/0657 , H01L29/7842 , H05K1/0278 , H05K1/0283 , H05K3/007
摘要： A method of making a flexible, foldable, stretchable electronic device. The method includes deposition of a polymer layer, such as parylene C, to impart flexibility to the device. The device overcomes the limitations of related flexible electronics schemes by employing established silicon-on-insulator complementary metal-oxide-semiconductor technology with a flexible enclosure. Devices made in such a way may be used in a wide variety of applications including incorporation into medical devices.
摘要翻译：制造柔性，可折叠，可拉伸的电子装置的方法。该方法包括聚合物层（例如聚对二甲苯C）的沉积，以赋予该装置的柔性。该器件通过采用已建立的绝缘体上硅互补金属氧化物半导体技术与柔性封装来克服相关柔性电子方案的局限性。以这种方式制造的装置可以用于各种应用，包括并入医疗装置。

10. 发明授权

US08859317B2 Gas sensor and manufacturing method thereof 有权
标题翻译：气体传感器及其制造方法
公开(公告)号：US08859317B2
公开(公告)日：2014-10-14
申请号：US13706046
申请日：2012-12-05
申请人： Industrial Technology Research Institute
发明人： Yu Sheng Hsieh , Jing Yuan Lin , Shang Chian Su
IPC分类号： H01L21/02 , H01L29/84 , B81C1/00 , H01L41/113 , G01N33/00 , G01N27/04 , G01N27/12
CPC分类号： H01L29/84 , B81C1/00158 , B81C1/00182 , B81C1/0019 , G01N27/04 , G01N27/128 , G01N33/0036 , H01L41/1136
摘要： A gas sensor manufacturing method comprises the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a trench and at least one conducting line; coating or imprinted a sensing material on the integrated circuit region; and etching the carrier and the oxide layer to form a cavity up to the gap so as to form a film structure which is suspended in the cavity by the cantilevered connecting arm.
摘要翻译：气体传感器的制造方法包括以下步骤：提供包括氧化物层，器件层和载体的SOI衬底，其中所述氧化物层设置在所述器件层和所述载体之间; 蚀刻器件层以形成集成电路区域，外部区域，沟槽和至少一条导电线; 在集成电路区域上涂覆或印刷感测材料; 并且蚀刻载体和氧化物层以形成直到间隙的空腔，以形成通过悬臂连接臂悬挂在空腔中的膜结构。

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