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    • 91. 发明授权
    • High voltage booster circuit for use in EEPROMs
    • 用于EEPROM的高压升压电路
    • US4916334A
    • 1990-04-10
    • US226312
    • 1988-07-29
    • Hidenobu MinagawaYuuichi TatsumiHiroshi IwahashiMasamichi AsanoMizuho Imai
    • Hidenobu MinagawaYuuichi TatsumiHiroshi IwahashiMasamichi AsanoMizuho Imai
    • G11C16/30H02M3/07H03K5/02
    • G11C16/30H02M3/07H03K5/023
    • A semiconductor integrated circuit includes a CMOS circuit operated on a voltage of a first voltage level to set an output node thereof to a voltage of the first voltage level or a reference voltage; an output circuit for controlling supply of a voltage of a second voltage level which is higher than the first voltage level to a signal output node; and an isolation MOS transistor having a current path connected between the output node of the CMOS circuit and the signal output node and a gate connected to receive a control signal. The output node of the CMOS circuit is set to the reference voltage with the conduction resistance of the isolation MOS transistor kept high after the lapse of period in which the voltage of the second voltage level is kept supplied to the signal output node. After this, the conduction resistance of the isolation MOS transistor is reduced in response to the control signal.
    • 半导体集成电路包括以第一电压电平工作的CMOS电路,以将其输出节点设置为第一电压电平或参考电压的电压; 输出电路,用于控制向信号输出节点提供高于第一电压电平的第二电压电平的电压; 以及隔离MOS晶体管,其具有连接在CMOS电路的输出节点和信号输出节点之间的电流路径以及连接以接收控制信号的栅极。 CMOS电路的输出节点被设定为参考电压,其中隔离MOS晶体管的导通电阻保持高电平,其中第二电压电平的电压被保持提供给信号输出节点。 此后,隔离MOS晶体管的导通电阻响应于控制信号而减小。
    • 92. 发明授权
    • Signal level transforming circuit
    • 信号电平变换电路
    • US4916330A
    • 1990-04-10
    • US249157
    • 1988-09-26
    • Akira HatakeyamaTakeshi Nakane
    • Akira HatakeyamaTakeshi Nakane
    • H03K3/0233H03K3/2893H03K5/02H03K5/08H03K19/018
    • H03K3/2893H03K3/02337
    • A signal level transforming circuit includes a constant current circuit for supplying a constant current corresponding to a power voltage of an input signal to an electrical line connected between an output terminal connected with an input terminal via an input resistor and a common voltage level terminal, a low level clamping circuit for clamping the minimum value of the voltage at the output terminal to a first low level voltage, a voltage generating circuit for generating a constant voltage so as to transform a voltage signal in the input terminal into a binary signal, and a comparing circuit having a hysteresis characteristic and including a multi-collector type transistor having one collector connected with a voltage output terminal in the voltage generating circuit via a resistor for setting a comparing voltage, and having another collector connected to the output terminal, and a transistor inserted between a base of the multi-collector type transistor and the resistor for setting a comparing voltage and for turning ON when the voltage at the input terminal exceeds the voltage in the resistor.
    • 信号电平变换电路包括:恒流电路,用于将与输入信号的电源电压相对应的恒定电流提供给连接在经由输入电阻器与输入端子连接的输出端子与公共电压电平端子之间的电线; 低电平钳位电路,用于将输出端子处的电压的最小值钳位到第一低电平电压;电压产生电路,用于产生恒定电压,以将输入端子中的电压信号转换为二进制信号;以及 具有滞后特性的比较电路,包括具有一个集电极的多集电极型晶体管,该多极集电极型晶体管通过用于设定比较电压的电阻器与电压产生电路中的电压输出端子连接,并且具有连接到输出端子的另一个集电极 插入在多集电极型晶体管的基极和用于固定的电阻器之间 g是一个比较电压,当输入端的电压超过电阻中的电压时导通。
    • 98. 发明授权
    • Pin driver circuit
    • 引脚驱动电路
    • US4800294A
    • 1989-01-24
    • US147484
    • 1988-01-25
    • Keith A. Taylor
    • Keith A. Taylor
    • H03K19/088G01R31/319H03K5/02H03K17/66H03K19/0175H03K19/082H03K3/023H03K5/12
    • G01R31/31924H03K17/666H03K19/0826G01R31/31922
    • A pin driver circuit for driving a digital integrated circuit is capable of producing symmetrical rise and fall characteristics, yet is suitable for implementation in monolithic bipolar integrated circuits. This circuit includes a pair of matched transconductance amplifiers, one at each end of an output resistor, connected between a voltage source and a return voltage. Each amplifier has one of a pair of equal resistors between its input terminal and high output terminal to develop an equal swing voltage on alternate ends of the output resistor when a swing voltage current source is switched between the two input resistors by a control signal. The output is taken from the junction between the output resistor and the low output terminal of the amplifier at the high end of the output resistor. An additional current source is connected to the input resistor of the amplifier at the low end of the divider to provide a current which may be adjusted to allow the standing current in the output resistor to be reduced to a satisfactory minimum. Additional circuitry can be added to allow the output to be put in a high impedance condition. In a preferred embodiment, the high level of the output, the swing voltage, and the standing current may all be controlled.
    • 用于驱动数字集成电路的引脚驱动电路能够产生对称的上升和下降特性,但适用于单片双极集成电路中的实现。 该电路包括一对匹配的跨导放大器,一个在输出电阻器的每一端,连接在电压源和返回电压之间。 每个放大器在其输入端和高输出端之间具有一对相等电阻中的一个,当通过控制信号在两个输入电阻之间切换摆动电压电流源时,在输出电阻的交替端产生相等的摆幅电压。 输出取自输出电阻器高端的放大器的输出电阻和低输出端之间的结。 额外的电流源连接到放大器的输入电阻器在分压器的低端,以提供可以被调节的电流,以使输出电阻器中的驻极电流能够降低到令人满意的最小值。 可以添加额外的电路,以使输出处于高阻抗状态。 在优选实施例中,可以全部控制输出的高电平,摆幅电压和静止电流。
    • 100. 发明授权
    • Electronic arrays having thin film line drivers
    • 具有薄膜线驱动器的电子阵列
    • US4782340A
    • 1988-11-01
    • US899442
    • 1986-08-22
    • Wolodymyr CzubatyjRoger W. Pryor
    • Wolodymyr CzubatyjRoger W. Pryor
    • G11C11/407G11C8/08H01L21/8229H01L27/10H01L27/102H03K5/02H03K19/0175G09G3/34
    • G11C8/08H01L27/10H03K19/017545H03K5/023G11C2211/5614
    • Fully integrated thin film electronic arrays including thin film line driver circuits and address decoding circuits are disclosed. Each line driver employs a two terminal thin film threshold switching device of the type exhibiting a negative resistance characteristic for very high speed, high current operation. The line drivers are particularly useful when driving address lines or other switched conductors in arrays having large capacitive loads or current requirements. The address decoding circuits are constructed from an array of thin film diodes configured as a plurality of AND logic gates, with the output of each AND gate providing the trigger signal to turn on a line driver circuit associated with a particular address line. Thin film structures used to implement the fully integrated arrays include diodes and threshold switches arranged as high density vertical devices in the form of multilayer mesa structures. An electronic memory array having a plurality of vertically arranged cells, with each cell provided with a thin film isolation diode and a thin film memory element, is also disclosed.
    • 公开了包括薄膜线路驱动电路和地址解码电路的完全集成的薄膜电子阵列。 每个线路驱动器采用具有负电阻特性的类型的双端子薄膜阈值开关器件,用于非常高速,高电流操作。 当驱动具有大容性负载或电流要求的阵列中的地址线或其他开关导体时,线路驱动器特别有用。 地址解码电路由配置为多个AND逻辑门的薄膜二极管阵列构成,每个与门的输出提供触发信号以接通与特定地址线相关联的线路驱动电路。 用于实现完全集成阵列的薄膜结构包括二极管和阈值开关,其布置为多层台面结构形式的高密度垂直器件。 还公开了具有多个垂直排列的单元的电子存储器阵列,每个单元设置有薄膜隔离二极管和薄膜存储元件。