专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US09893493B2 Surface emitting quantum cascade laser 有权
公开(公告)号：US09893493B2
公开(公告)日：2018-02-13
申请号：US15246750
申请日：2016-08-25
申请人： Kabushiki Kaisha Toshiba
发明人： Shinji Saito , Tsutomu Kakuno , Osamu Yamane , Akira Tsumura
IPC分类号： H01S5/34 , H01S5/042 , H01S5/18
CPC分类号： H01S5/3402 , H01S5/0425 , H01S5/105 , H01S5/18 , H01S5/183 , H01S5/2027 , H01S5/2228 , H01S2301/145
摘要： A surface emitting quantum cascade laser includes an active layer, a first semiconductor layer, and first electrode. The active layer has a plurality of quantum well layers stacked therein. The active layer is capable of emitting laser light by inter-subband transition. The first semiconductor layer is provided on the active layer and having a first surface provided with a plurality of pits so as to constitute a two-dimensional lattice. The first electrode is provided on the first semiconductor layer and having a periodic opening. Each pit is asymmetric with respect to a line parallel to a side of the lattice. The laser light is emitted in a direction generally perpendicular to the active layer from a pit exposed to the opening.

92. 发明授权

US09859685B2 Small aperture formation for facilitating optoelectronic device integration with defective semiconductor materials 有权
公开(公告)号：US09859685B2
公开(公告)日：2018-01-02
申请号：US14966850
申请日：2015-12-11
申请人： International Business Machines Corporation
发明人： Effendi Leobandung , Ning Li , Devendra K. Sadana
IPC分类号： H01S5/18 , H01S5/183 , H01L27/092 , H01S5/10 , H01S5/187 , H01S5/22
CPC分类号： H01S5/183 , H01L21/8258 , H01L27/092 , H01S5/1042 , H01S5/18 , H01S5/18311 , H01S5/18363 , H01S5/187 , H01S5/2004 , H01S5/2081 , H01S5/22 , H01S5/3201 , H01S2301/176
摘要： In one example, a device includes a layered semiconductor material having material defects formed therein and an optoelectronic device formed in the layered semiconductor material. The optoelectronic device includes an active region comprising an aperture formed through the layered semiconductor material. The aperture is formed in a manner that avoids intersection with the material defects.

93. 发明授权

US09830937B1 Horizontal cavity surface emitting laser assembly features for heat assisted magnetic recording 有权
公开(公告)号：US09830937B1
公开(公告)日：2017-11-28
申请号：US15408646
申请日：2017-01-18
申请人： Seagate Technology LLC
发明人： Roger L. Hipwell, Jr. , Jon Paul Hurley , Scott Eugene Olson , Ralph Kevin Smith , Joseph Michael Stephan
IPC分类号： G11B5/48 , H01S5/10 , H01S5/18 , G11B5/00
CPC分类号： G11B5/4826 , G11B5/4866 , G11B2005/0021 , H01S5/005 , H01S5/02252 , H01S5/02272 , H01S5/18
摘要： A laser is configured to emit light along a substrate-parallel plane along a first surface of the laser. An etched facet is on an emitting end of a lasing cavity and an etched mirror is on another end of the lasing cavity. An etched shaping mirror redirects light received from the etched facet in a direction normal to the substrate-parallel plane. A slider comprises an optical input coupler configured to couple the light from the laser into a waveguide of the slider. At least one protrusion is disposed on the laser and at least one recession is disposed on the slider, the at least one protrusion and the at least one recession configured to align the laser with the slider to allow the light to be coupled into the optical input coupler.

94. 发明申请

US20170338624A1 SEMICONDUCTOR LASER DEVICE 有权
公开(公告)号：US20170338624A1
公开(公告)日：2017-11-23
申请号：US15538219
申请日：2015-12-24
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Yuu TAKIGUCHI , Kazuyoshi HIROSE , Yoshitaka KUROSAKA , Takahiro SUGIYAMA , Yoshiro NOMOTO
IPC分类号： H01S5/042 , H01S5/12 , H01S5/022 , H01S5/18 , H01S5/026 , H01S5/343
CPC分类号： H01S5/0425 , G02F1/13 , H01S3/1065 , H01S5/0228 , H01S5/026 , H01S5/0624 , H01S5/06243 , H01S5/105 , H01S5/12 , H01S5/14 , H01S5/18 , H01S5/18302 , H01S5/18361 , H01S5/34313 , H01S5/34353 , H01S2301/02 , H01S2301/20
摘要： This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.

95. 发明申请

US20170271849A1 SURFACE EMITTING QUANTUM CASCADE LASER 有权
公开(公告)号：US20170271849A1
公开(公告)日：2017-09-21
申请号：US15246750
申请日：2016-08-25
申请人： Kabushiki Kaisha Toshiba
发明人： Shinji SAITO , Tsutomu KAKUNO , Osamu YAMANE , Akira TSUMURA
IPC分类号： H01S5/34 , H01S5/18 , H01S5/042
CPC分类号： H01S5/3402 , H01S5/0425 , H01S5/105 , H01S5/18 , H01S5/183 , H01S5/2027 , H01S5/2228 , H01S2301/145
摘要： A surface emitting quantum cascade laser includes an active layer, a first semiconductor layer, and first electrode. The active layer has a plurality of quantum well layers stacked therein. The active layer is capable of emitting laser light by inter-subband transition. The first semiconductor layer is provided on the active layer and having a first surface provided with a plurality of pits so as to constitute a two-dimensional lattice. The first electrode is provided on the first semiconductor layer and having a periodic opening. Each pit is asymmetric with respect to a line parallel to a side of the lattice. The laser light is emitted in a direction generally perpendicular to the active layer from a pit exposed to the opening.

96. 发明授权

US09692202B2 Lasers with beam shape and beam direction modification 有权
公开(公告)号：US09692202B2
公开(公告)日：2017-06-27
申请号：US14535590
申请日：2014-11-07
申请人： MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
发明人： Alex A. Behfar , Cristian Stagarescu , Norman Sze-keung Kwong
IPC分类号： H01S5/18 , H01S5/00 , H01S5/022 , H01S5/026
CPC分类号： H01S5/0071 , G02B6/305 , G02B6/34 , G02B6/4214 , G02B27/0983 , H01S5/02252 , H01S5/02292 , H01S5/026 , H01S5/1014 , H01S5/18 , H01S2301/185
摘要： A reflective surface is disclosed in conjunction with a semiconductor laser to shape a laser beam and modify a direction of the laser beam. The reflective surface may be formed on a structure disposed adjacent to a laser structure to allow high coupling of laser light to, for example, a silicon photonics chip or an optical fiber.

97. 发明授权

US09660415B2 Semiconductor laser device 有权
公开(公告)号：US09660415B2
公开(公告)日：2017-05-23
申请号：US14786217
申请日：2014-04-25
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Yuu Takiguchi , Yoshiro Nomoto
IPC分类号： H01S5/026 , H01S5/183 , H01S5/18 , H01S5/187 , G02F1/1343 , G02F1/1335 , H01S5/10
CPC分类号： H01S5/0265 , G02F1/133603 , G02F1/133615 , G02F1/13439 , H01S5/105 , H01S5/18 , H01S5/183 , H01S5/18302 , H01S5/18386 , H01S5/187
摘要： This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, and a diffraction grating layer 6 which is optically connected to the active layer 4. The spatial light modulator SLM includes a transparent common electrode 25, a plurality of transparent pixel electrodes 21, a liquid crystal layer LC arranged between the common electrode 25 and the pixel electrodes 21. A laser beam output in a thickness direction of the diffraction grating layer 6 is modulated by the spatial light modulator SLM, passes therethrough, and is output to the outside.

98. 发明授权

US09531160B2 Two-dimensional photonic crystal surface-emitting laser 有权
标题翻译：二维光子晶体表面发射激光器
公开(公告)号：US09531160B2
公开(公告)日：2016-12-27
申请号：US14773584
申请日：2014-02-25
申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY
发明人： Susumu Noda , Tsuyoshi Okino , Kyoko Kitamura , Yoshinori Tanaka , Yong Liang
IPC分类号： H01S5/00 , H01S5/18 , H01S5/042 , H01S5/10 , H01S3/00 , H01S3/10
CPC分类号： H01S5/18 , H01S3/0085 , H01S3/10 , H01S5/0425 , H01S5/105 , H01S5/1215 , H01S2301/18
摘要： A two-dimensional photonic crystal surface emitting laser has a laminated structure including: a two-dimensional photonic crystal (2DPC) layer in which refractive index distribution is formed by two-dimensionally arranging air holes in a plate-shaped base member; and an active layer for generating light with wavelength λL by receiving an injection of electric current. The two-dimensional photonic crystal surface emitting laser emits a laser beam in the direction of an inclination angle θ from normal to the 2DPC layer.
摘要翻译：二维光子晶体表面发射激光器具有层叠结构，包括：二维光子晶体（2DPC）层，其中通过在板状基底构件中二维布置空气孔而形成折射率分布; 以及通过接收电流的注入而产生具有波长λL的光的有源层。二维光子晶体表面发射激光器从垂直于2DPC层的倾斜角度θ的方向发射激光束。

99. 发明授权

US09407064B2 Light-emitting element and method for manufacturing the same 有权
公开(公告)号：US09407064B2
公开(公告)日：2016-08-02
申请号：US14823868
申请日：2015-08-11
申请人： Sony Corporation
发明人： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
IPC分类号： H01S5/00 , H01L33/44 , H01L33/32 , H01S5/125 , H01S5/22 , H01S5/343 , H01S5/223 , H01S5/187 , H01S5/022 , B82Y20/00 , H01S5/042 , H01S5/183 , H01S5/18
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/125 , H01S5/18 , H01S5/18311 , H01S5/18338 , H01S5/187 , H01S5/22 , H01S5/221 , H01S5/2231 , H01S5/343 , H01S5/34313 , H01S5/3432 , H01S2301/176 , H01S2301/18
摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

100. 发明授权

US09048623B2 Photonic crystal laser 有权
标题翻译：光子晶体激光器
公开(公告)号：US09048623B2
公开(公告)日：2015-06-02
申请号：US13581743
申请日：2011-03-01
申请人： Susumu Noda , Kyoko Kitamura , Yoshitaka Kurosaka , Kyosuke Sakai
发明人： Susumu Noda , Kyoko Kitamura , Yoshitaka Kurosaka , Kyosuke Sakai
IPC分类号： H01S5/18 , H01S5/10 , B82Y20/00 , H01S5/187 , H01S5/026 , H01S5/343
CPC分类号： H01S5/105 , B82Y20/00 , H01S5/0267 , H01S5/1071 , H01S5/187 , H01S5/34333 , H01S2301/14 , H01S2301/203
摘要： A photonic crystal laser capable of producing a radially-polarized halo-shaped laser beam having a smaller width than conventional beams includes: an active layer; a ring-shaped photonic crystal including a plate-shaped base body on one side of the active layer, the base body having a number of modified refractive index areas of the same shape, the modified refractive index areas having a refractive index different from the base body and periodically arranged in the circumferential direction of a ring, and each of the modified refractive index areas being asymmetrically shaped with respect to an axis extending through the center of the modified refractive index area in the radial direction of the ring; a first and second electrode facing each other across the active layer and the ring-shaped photonic crystal; and a window provided in the second electrode capable of allowing passage of a laser light generated from the ring-shaped photonic crystal.
摘要翻译：能够产生具有比常规光束更小的宽度的径向偏振的卤素状激光束的光子晶体激光器包括：有源层; 在有源层的一侧包括板状基体的环状光子晶体，所述基体具有多个相同形状的改性折射率区域，所述改性折射率区域的折射率不同于所述基底并且每个修改的折射率区域相对于在环的径向方向上延伸穿过修改的折射率区域的中心的轴线不对称地成形; 第一和第二电极，跨越有源层和环形光子晶体彼此面对; 以及设置在第二电极中的能够允许从环形光子晶体产生的激光通过的窗口。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式