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1. 发明授权

US09859685B2 Small aperture formation for facilitating optoelectronic device integration with defective semiconductor materials 有权
公开(公告)号：US09859685B2
公开(公告)日：2018-01-02
申请号：US14966850
申请日：2015-12-11
申请人： International Business Machines Corporation
发明人： Effendi Leobandung , Ning Li , Devendra K. Sadana
IPC分类号： H01S5/18 , H01S5/183 , H01L27/092 , H01S5/10 , H01S5/187 , H01S5/22
CPC分类号： H01S5/183 , H01L21/8258 , H01L27/092 , H01S5/1042 , H01S5/18 , H01S5/18311 , H01S5/18363 , H01S5/187 , H01S5/2004 , H01S5/2081 , H01S5/22 , H01S5/3201 , H01S2301/176
摘要： In one example, a device includes a layered semiconductor material having material defects formed therein and an optoelectronic device formed in the layered semiconductor material. The optoelectronic device includes an active region comprising an aperture formed through the layered semiconductor material. The aperture is formed in a manner that avoids intersection with the material defects.

2. 发明授权

US09816920B2 Method for producing an integrated micromechanical fluid sensor component, integrated micromechanical fluid sensor component and method for detecting a fluid by means of an integrated micromechanical fluid sensor component 有权
公开(公告)号：US09816920B2
公开(公告)日：2017-11-14
申请号：US15112163
申请日：2014-11-21
申请人： Robert Bosch GmbH
发明人： Richard Fix , Rene Hartke , Jochen Beintner
IPC分类号： G01N1/10 , G01N21/3504 , G01N21/359 , G01N21/39 , H01S5/00 , H01S5/026 , H01S5/06 , H01S5/183
CPC分类号： G01N21/3504 , G01N21/359 , G01N21/39 , G01N2201/0612 , H01S5/0028 , H01S5/0264 , H01S5/0607 , H01S5/18361 , H01S5/18363
摘要： A method for producing an integrated micromechanical fluid sensor component includes forming a first wafer with a first Bragg reflector and with a light-emitting device on a first substrate. The light-emitting device is configured to emit light rays in an emission direction from a surface of the light-emitting device facing away from the first Bragg reflector. The method further includes forming a second wafer with a second Bragg reflector and with a photodiode on a second substrate. The photodiode is arranged on a surface of the second Bragg reflector facing towards the second substrate. The method also includes bonding or gluing the first wafer to the second wafer such that there is formed a cavity into which a fluid is introduced and through which the light rays can pass. The method further includes separating the fluid sensor component from the first and the second wafer.

3. 发明申请

US20170033534A1 VCSEL STRUCTURE 审中-公开
标题翻译： VCSEL结构
公开(公告)号：US20170033534A1
公开(公告)日：2017-02-02
申请号：US15302346
申请日：2015-04-07
申请人： Danmarks Tekniske Universitet
发明人： Il-Sug CHUNG , ALIREZA Taghizadeh
IPC分类号： H01S5/183 , H01S5/026
CPC分类号： H01S5/18319 , G02B6/12004 , H01S5/026 , H01S5/1032 , H01S5/183 , H01S5/18302 , H01S5/18311 , H01S5/18341 , H01S5/18361 , H01S5/18363 , H01S5/1838 , H01S5/18386 , H01S5/18397
摘要： The invention relates to a VCSEL structure based on a novel grating reflector. The grating reflector (1) comprises a grating layer (20) with a contiguous core grating region having a grating structure, wherein an index of refraction of high-index sections (21) of the grating structure is at least 2.5, and wherein an index of refraction of low-index sections (22) of the grating structure is less than 2. The core grating region defines a projection in a direction normal to the grating layer. The grating reflector further comprises a cap layer (30) abutting the grating layer (20), and an index of refraction of the cap layer within the projection of the core grating region onto the cap layer is at least 2.5, and within the projection of the core grating region, the cap layer is abutted by a first solid dielectric low-index layer, an index of refraction of the first low-index layer or air being less than 2; and within the projection of the core grating region, the grating layer is also abutted by a second low-index layer and/or by air, an index of refraction of the second low-index layer or air being less than 2. The VCSEL structure furthermore comprises a first reflector and an active region for providing a cavity and amplification. The cap layer (30) may comprise an active layer (32) between cladding layers (31,33) and electrical contacts (35,36) to provide a current through the active layer. Current confinement may be realized by low-index oxide regions (60).
摘要翻译：本发明涉及一种基于新型光栅反射器的VCSEL结构。光栅反射器（1）包括具有光栅结构的连续核心光栅区域的光栅层（20），其中光栅结构的高折射率部分（21）的折射率至少为2.5，并且其中指数光栅结构的低折射率部分（22）的折射率小于2.核心光栅区域在垂直于光栅层的方向上限定投影。栅格反射器还包括邻接光栅层（20）的覆盖层（30），并且覆盖层在核心光栅区域的突起内的覆盖层的折射率至少为2.5，并且在核心光栅区域，盖层与第一固体电介质低折射率层邻接，第一低折射率层或空气的折射率小于2; 并且在芯光栅区域的投影内，光栅层也被第二低折射率层和/或空气邻接，第二低折射率层或空气的折射率小于2. VCSEL结构还包括第一反射器和用于提供空腔和放大的有源区域。盖层（30）可以包括在包层（31,33）和电触头（35,36）之间的有源层（32），以提供通过有源层的电流。电流限制可以由低折射率氧化物区域实现（60）。

4. 发明授权

US09337623B2 High density laser optics 有权
公开(公告)号：US09337623B2
公开(公告)日：2016-05-10
申请号：US14642950
申请日：2015-03-10
申请人： Hewlett-Packard Development Company, L.P.
发明人： Michael Renne Ty Tan , David A. Fattal , Wayne Victor Sorin , Sagi Mathai
IPC分类号： H01S5/00 , H01S5/42 , H01S5/026 , H01S5/10 , H01S5/183 , B82Y20/00 , H01S5/187 , G02B6/12 , G02B6/124 , G02B6/13 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/068 , H01S5/343 , H01S5/40 , H01S5/34
CPC分类号： H01S5/423 , B82Y20/00 , G02B6/12016 , G02B6/12019 , G02B6/12026 , G02B6/124 , G02B6/13 , G02B2006/12107 , G02B2006/12164 , H01S5/0215 , H01S5/02248 , H01S5/02461 , H01S5/0268 , H01S5/068 , H01S5/1092 , H01S5/183 , H01S5/18319 , H01S5/18363 , H01S5/18386 , H01S5/187 , H01S5/3412 , H01S5/34313 , H01S5/3434 , H01S5/4087
摘要： Apparatuses and methods for high density laser optics are provided. An example, of a laser optics apparatus includes a plurality of vertical cavity surface emitting lasers (VCSELs) in a monolithically integrated array, a high contrast grating (HCG) integrated with an aperture of a vertical cavity of each of the plurality of the VCSELs to enable emission of a single lasing wavelength of a plurality of lasing wavelengths, and a plurality of single mode waveguides, each integrated with a grating coupler, that are connected to each of the plurality of the integrated VCSELs and the HCGs, where each of the grating couplers is aligned to an integrated VCSEL and HCG.

5. 发明申请

US20160056603A1 OPTICAL INTERCONNECTS 有权
标题翻译：光学互联
公开(公告)号：US20160056603A1
公开(公告)日：2016-02-25
申请号：US14466684
申请日：2014-08-22
申请人： Empire Technology Development LLC
发明人： Peter John Reece
IPC分类号： H01S3/067 , H01S5/183
CPC分类号： H01S5/146 , G02B6/02123 , G02B6/42 , G02B6/4214 , G02B6/4215 , H01S5/18308 , H01S5/18361 , H01S5/18363 , H01S5/1838
摘要： The present disclosure relates to methods and apparatuses for improving tolerances of in-plane optical alignment of optical interconnects. An example method includes depositing a first reflector with a first spectral reflectivity on an end of an optical fiber, coupling a laser to another end of the optical fiber, changing a spectral reflectivity of a region of the first reflector adjacent to the end of a core of the optical fiber from the first spectral reflectivity by exposure to the laser, resulting in a first reflector with multiple regions of spectral reflectivity, and coupling the first reflector to an integrated unit comprising an optical cavity deposited on a second reflector.
摘要翻译：本公开涉及用于改善光学互连的面内光学对准的公差的方法和装置。示例性方法包括在光纤端部沉积具有第一光谱反射率的第一反射器，将激光耦合到光纤的另一端，改变第一反射器的与芯的端部相邻的区域的光谱反射率通过暴露于激光器从第一光谱反射率获得光纤，从而产生具有多个光谱反射率区域的第一反射器，以及将第一反射器耦合到包括沉积在第二反射器上的光学腔的集成单元。

6. 发明申请

US20160013618A1 SURFACE EMITTING LASER AND OPTICAL COHERENCE TOMOGRAPHY APPARATUS 有权
标题翻译：表面发射激光和光学相干计算机
公开(公告)号：US20160013618A1
公开(公告)日：2016-01-14
申请号：US14790118
申请日：2015-07-02
申请人： CANON KABUSHIKI KAISHA
发明人： Yasuhiro Nagatomo
IPC分类号： H01S5/10 , H01S5/183 , G01B9/02 , H01S5/187
CPC分类号： H01S5/18366 , A61B5/0066 , G01B9/02001 , G01B9/02091 , H01S5/10 , H01S5/1039 , H01S5/12 , H01S5/125 , H01S5/183 , H01S5/1833 , H01S5/18333 , H01S5/18361 , H01S5/18363 , H01S5/187
摘要： In order to provide a wavelength tunable surface emitting laser capable of improving a wavelength tuning efficiency, provided is a surface emitting laser, including: a first reflector; a semiconductor cavity including an active layer; and a second reflector, the first reflector, the semiconductor cavity, and the second reflector being formed in the stated order, a gap portion being formed between the first reflector and a semiconductor layer, a cavity length being tunable, in which the surface emitting laser has a high reflectivity structure formed between the gap portion and the semiconductor cavity, and an expression of “(λ/2)×m+λ/8
摘要翻译：为了提供能够提高波长调谐效率的波长可调谐表面发射激光器，提供了一种表面发射激光器，包括：第一反射器; 包括有源层的半导体腔; 以及第二反射器，所述第一反射器，所述半导体腔和所述第二反射器按照所述顺序形成，在所述第一反射器和半导体层之间形成间隙部分，所述空腔长度是可调谐的，其中所述表面发射激光器在间隙部分和半导体腔之间形成高反射率结构，并且满足“（λ/ 2）×m +λ/ 8

7. 发明申请

US20150380904A1 SURFACE EMITTING LASER AND OPTICAL COHERENCE TOMOGRAPHY APPARATUS INCLUDING THE SAME 有权
标题翻译：表面发射激光和光学相干测量装置，包括它们
公开(公告)号：US20150380904A1
公开(公告)日：2015-12-31
申请号：US14755504
申请日：2015-06-30
申请人： CANON KABUSHIKI KAISHA
发明人： Yasuhiro Nagatomo
IPC分类号： H01S5/183 , G01B9/02
CPC分类号： H01S5/18361 , G01B9/02004 , G01B9/02091 , H01S5/18 , H01S5/183 , H01S5/18308 , H01S5/18316 , H01S5/18322 , H01S5/18341 , H01S5/18358 , H01S5/18363 , H01S5/18366 , H01S5/18369 , H01S5/1838 , H01S5/187 , H01S2301/163
摘要： A surface emitting laser includes a lower reflector, an active layer, and an upper reflector that are arranged in that order; an air gap provided between the active layer and the upper reflector; and a slab provided on an optical path of the air gap and having a refractive index that is higher than a refractive index of the air gap. A position of at least one of the upper reflector and the lower reflector in an optical axis direction is changed to change a wavelength of emitted light. In the case where the position of the upper reflector is changed, a center of the slab in the optical axis direction is located between any antinode of a standing wave formed in the air gap and a node of the standing wave that is adjacent to and on an upper-reflector side of the antinode.
摘要翻译：表面发射激光器包括按照该顺序布置的下反射器，有源层和上反射器; 在所述有源层和所述上反射器之间设置的气隙; 以及设置在所述气隙的光路上并且具有高于所述气隙的折射率的折射率的板。改变上反射器和下反射器中的至少一个在光轴方向上的位置以改变发射光的波长。在上反射体的位置改变的情况下，板坯在光轴方向上的中心位于形成在气隙中的驻波的任何波腹和与之相邻的驻波的节点之间波腹的上反射器侧。

8. 发明申请

US20140253925A1 SURFACE EMITTING LASER AND OPTICAL COHERENCE TOMOGRAPHY APPARATUS EQUIPPED WITH SURFACE EMITTING LASER 有权
标题翻译：表面发射激光和光学相干光学仪器配备表面发射激光
公开(公告)号：US20140253925A1
公开(公告)日：2014-09-11
申请号：US14198389
申请日：2014-03-05
申请人： CANON KABUSHIKI KAISHA
发明人： Yoshinobu Sekiguchi
IPC分类号： G01B9/02 , H01S5/183
CPC分类号： G01B9/02091 , H01S5/1021 , H01S5/1039 , H01S5/18311 , H01S5/18322 , H01S5/18358 , H01S5/18363 , H01S5/18366
摘要： A surface emitting laser according to the present invention includes a lower reflector, a first spacer layer, an active layer, a second spacer layer composed of a semiconductor material, a gap section formed of at least one of vacuum and gas, and an upper reflector in the written order, and also includes a control mechanism that changes a distance between an interface between the second spacer layer and the gap section and an interface between the upper reflector and the gap section. An optical path length neff×d extending from an interface between the lower reflector and the first spacer layer to an interface between the second spacer layer and the gap section satisfies a predetermined relationship.
摘要翻译：根据本发明的表面发射激光器包括下反射器，第一间隔层，有源层，由半导体材料构成的第二间隔层，由真空和气体中的至少一个形成的间隙部分和上反射器并且还包括改变第二间隔层和间隙部分之间的界面与上反射器与间隙部分之间的界面之间的距离的控制机构。从下反射器和第一间隔层之间的界面延伸到第二间隔层和间隙部分之间的界面的光程长度neff×d满足预定关系。

9. 发明授权

US07923275B2 Surface emitting laser and manufacturing method thereof 有权
标题翻译：表面发射激光器及其制造方法
公开(公告)号：US07923275B2
公开(公告)日：2011-04-12
申请号：US12544243
申请日：2009-08-20
申请人： Shigeru Nakagawa
发明人： Shigeru Nakagawa
IPC分类号： H01L21/00
CPC分类号： H01S5/1833 , B82Y20/00 , H01S5/18311 , H01S5/18316 , H01S5/18347 , H01S5/18363 , H01S5/2081 , H01S5/3432 , H01S2301/163
摘要： A surface emitting laser includes a lower Bragg reflector, a resonator and an upper Bragg reflector. The resonator is provided on top of the lower Bragg reflector and includes an active layer, a lower semiconductor layer and an upper semiconductor layer. The upper Bragg reflector is provided on top of the resonator, and includes a plurality of semiconductor layers. In this surface emitting laser, the uppermost layer among the plurality of semiconductor layers in the lower Bragg reflector forms an air gap, which is larger than the aperture of the first insulating layer, while the lowermost layer among the plurality of semiconductor layers in the upper Bragg reflector forms an air gap, which is larger than the aperture of the second insulating layer.
摘要翻译：表面发射激光器包括下布拉格反射器，谐振器和上布拉格反射器。谐振器设置在下布拉格反射器的顶部，并且包括有源层，下半导体层和上半导体层。上布拉格反射器设置在谐振器的顶部，并且包括多个半导体层。在该表面发射激光器中，下布拉格反射器中的多个半导体层中的最上层形成比第一绝缘层的孔径大的气隙，而上部的多个半导体层中的最下层布拉格反射器形成比第二绝缘层的孔径大的气隙。

10. 发明申请

US20060186426A1 Optical device, surface emitting type device and method for manufacturing the same 失效
公开(公告)号：US20060186426A1
公开(公告)日：2006-08-24
申请号：US11409045
申请日：2006-04-24
申请人： Shin-Ya Nunoue , Masayuki Ishikawa
发明人： Shin-Ya Nunoue , Masayuki Ishikawa
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/105 , B82Y20/00 , G02B6/4214 , H01L33/46 , H01L33/465 , H01S5/18308 , H01S5/18341 , H01S5/1835 , H01S5/18361 , H01S5/18363 , H01S5/209 , H01S5/34333 , H01S2304/04
摘要： The present invention provides an optical device and a surface emitting type device which have high efficiency and a stable operation and are manufactured at high manufacturing yield. The optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) including a plurality of semiconductor layers made of a nitride semiconductor with substantially same gaps therbetween. Further, the optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) in which a plurality of semiconductor layers made of nitride semiconductor and a plurality of organic layers made of organic material are alternately laminated.

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