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91. 发明授权

US4349794A Shallow bulk acoustic wave devices 失效
标题翻译：浅体积声波装置
公开(公告)号：US4349794A
公开(公告)日：1982-09-14
申请号：US954149
申请日：1978-10-24
申请人： Reynold S. Kagiwada , Kuo-Hsiung Yen , Ke-Li Wang , Kei F. Lau , Donald L. Lochhead , James A. Leaverton
发明人： Reynold S. Kagiwada , Kuo-Hsiung Yen , Ke-Li Wang , Kei F. Lau , Donald L. Lochhead , James A. Leaverton
IPC分类号： H03H9/02 , H03H9/15 , H03B5/32 , H03H9/36
CPC分类号： H03H9/02795 , H03H9/02236 , H03H9/02653 , H03H9/027 , H03H9/02716
摘要： Acoustic wave devices employing shallow bulk acoustic waves rather than surface acoustic waves, to provide higher frequencies of operation and other significant advantages, such as less susceptibility to aging and less sensitivity to surface contamination. In each embodiment of the invention, a transmitting transducer and a receiving transducer are oriented on the surface of an anisotropic piezoelectric crystal to achieve substantial coupling of shallow bulk acoustic waves and essentially zero coupling of surface acoustic waves. In one embodiment of the invention, various types of grating filters utilize shallow bulk acoustic waves, and a set of parallel mechanical or electrical discontinuities at or near the surface of the crystal provide reflection of acoustic energy at a frequency determined by the spacing of the discontinuities. Uniformly spaced gratings provide bandpass filter operation, and gratings with graduated spacings provide for frequency compression or expansion. In another embodiment of the invention, variations in device characteristics due to temperature changes are compensated for by directing the shallow bulk waves through materials having favorable or opposite temperature characteristics compared with those of the material into which the waves are originally launched. In other embodiments of the invention, a shallow bulk acoustic wave includes a multistrip coupler, for transferring electroacoustic energy from one propagation path to another, for use in bandpass filters, delay lines or unidirectional transducers.
摘要翻译：使用浅体积声波而不是表面声波的声波装置，以提供更高的操作频率和其他显着的优点，例如对老化的敏感性较低和对表面污染的敏感性较小。在本发明的每个实施例中，发射换能器和接收换能器定向在各向异性压电晶体的表面上，以实现浅体积声波和表面声波的基本零耦合的实质耦合。在本发明的一个实施例中，各种类型的光栅滤波器利用浅体积声波，并且在晶体表面处或附近的一组平行的机械或电气不连续性以由不连续部分的间隔确定的频率提供声能的反射。均匀间隔的光栅提供带通滤波器操作，具有刻度间距的光栅可用于频率压缩或扩展。在本发明的另一个实施例中，由于温度变化引起的器件特性的变化是通过将浅体积波导入具有有利或相反温度特性的材料来补偿的，与材料相比，波浪最初被发射的材料。在本发明的其他实施例中，浅体积声波包括用于将电声能从一个传播路径转移到另一传播路径的多带耦合器，用于带通滤波器，延迟线或单向换能器。

92. 发明授权

US4342014A Multi-resonator crystal filter having a reduced number of pins and method of fabrication thereof 失效
标题翻译：具有减少引脚数量的多谐振器晶体滤波器及其制造方法
公开(公告)号：US4342014A
公开(公告)日：1982-07-27
申请号：US222430
申请日：1981-01-05
申请人： Aristotelis Arvanitis
发明人： Aristotelis Arvanitis
IPC分类号： H03H9/05 , H03H9/54 , H03H9/56 , H03H3/04 , H03H9/15
CPC分类号： H03H9/56 , H03H9/545 , Y10T29/42
摘要： A multi-resonator crystal filter is provided having a reduced number of electrical connecting pins. The monolithic crystal filter includes at least four resonators, namely, an input resonator, an output resonator and electrically coupled center resonators. A single electrical pin connection is made to the electrically coupled together center resonators thus avoiding the need for an individual connecting pin for each resonator.
摘要翻译：提供了具有减少数量的电连接销的多谐振器晶体滤波器。单片晶体滤波器包括至少四个谐振器，即输入谐振器，输出谐振器和电耦合中心谐振器。对电耦合在一起的中心谐振器进行单个电引脚连接，从而避免了每个谐振器需要单独的连接引脚。

93. 发明公开

US20240291466A1 SPURIOUS MODE REDUCTION FOR ELECTROMECHANICAL RESONATOR CIRCUIT 审中-公开
公开(公告)号：US20240291466A1
公开(公告)日：2024-08-29
申请号：US18173950
申请日：2023-02-24
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Ting-Ta Yen , Jeronimo Segovia Fernandez , Sean Chang
IPC分类号： H03H9/15 , H03H3/02 , H03H9/02
CPC分类号： H03H9/15 , H03H3/02 , H03H9/02007
摘要： One example described herein includes an integrated circuit (IC). The IC includes a substrate having opposing first and second sides. The second side can include a curved surface. The IC also includes a resonator on the first side. A curvature of the curved surface can reflect a property of the resonator.

94. 发明授权

US12074582B2 Electroacoustic resonator 有权
公开(公告)号：US12074582B2
公开(公告)日：2024-08-27
申请号：US17597467
申请日：2020-07-14
申请人： RF360 SINGAPORE PTE. LTD
发明人： Matthias Pernpeintner
IPC分类号： H03H9/02 , H03H9/15 , H03H9/25 , H10N30/87
CPC分类号： H03H9/02992 , H03H9/15 , H03H9/25 , H10N30/87
摘要： An electroacoustic resonator comprises a substrate (3) with a piezoelectric material and an interdigital electrode structure on a top side (33) of the substrate. The electrode structure comprises a first electrode (1) and a second electrode (2) each with a busbar (20) and a plurality of fingers (10). The fingers of both electrodes interdigitate. The region of the top side between the two busbars is subdivided into two barrier regions (113), two trap regions (112) and one track region (111), the trap regions being located between the two barrier regions and the track region being located between the two trap regions. At least some fingers each comprise one barrier portion (13), two trap portions (12) and one track portion (11), wherein the barrier portion is associated with the barrier region closest to the busbar assigned to the finger, the trap portions are each associated with one of the trap regions and the track portion is associated with the track region. The fingers are configured such that the velocity of a main mode of surface acoustic waves is smaller in the trap regions than in the track region. Each electrode comprises a plurality of stub fingers (30) being shorter than the fingers. Each stub finger is associated only with the barrier region closest to the busbar assigned to the stub finger. The electrodes are configured such that a velocity of the main mode in the barrier regions is greater than in the track region.

95. 发明授权

US12072484B2 Power efficiency optimization method of LC resonant driver for MEMS mirrors 有权
公开(公告)号：US12072484B2
公开(公告)日：2024-08-27
申请号：US17353724
申请日：2021-06-21
申请人： MICROSOFT TECHNOLOGY LICENSING, LLC
发明人： Chang Joon Park , Martin Francis Galinski
IPC分类号： G02B26/08 , H03H7/00 , H03H9/15
CPC分类号： G02B26/0833 , H03H9/15 , H03H2007/006 , H03H2009/155
摘要： Techniques are described herein for dynamically adjusting a resonant frequency of a resonance circuit to optimize power transfer to a mirror device such as a MEMS mirror. A variable capacitance circuit can be operated responsive to a bias control signal. A capacitance control circuit can vary the bias control signal to the resonance circuit responsive to a sense signal. The sense circuit is configured to generate the sense signal responsive to an output of the mirror device. By monitoring a signal level from the output of the mirror device 130, and adjusting the bias control signal of the resonance circuit, the exact resonance frequency of the resonance circuit can be adjusted until a peak signal level is observed, thus improving the efficiency of the energy transferred from the driver circuit 110 to the mirror device 130, and counteracting the impact of parasitic capacitances on the resonance.

96. 发明授权

US12001012B2 Piezoelectric based MEMS device with time sharing actuation and sensing circuitry 有权
公开(公告)号：US12001012B2
公开(公告)日：2024-06-04
申请号：US17238596
申请日：2021-04-23
申请人： STMicroelectronics S.r.l. , STMicroelectronics Ltd
发明人： Davide Terzi , Gianluca Mendicino , Dadi Sharon
IPC分类号： G02B26/10 , B81B3/00 , G02B26/08 , G09G3/34 , H02N2/10 , H02N2/14 , H03H9/15 , H10N30/20 , H10N30/853
CPC分类号： G02B26/101 , B81B3/0021 , G02B26/0858 , G09G3/346 , H02N2/103 , H02N2/145 , H03H9/15 , H10N30/204 , B81B2201/032 , H10N30/8554
摘要： Disclosed herein is a microelectromechanical (MEMS) device, including a rotor and a first piezoelectric actuator mechanically coupled to the rotor. The first piezoelectric actuator is electrically coupled between a first signal node and a common voltage node. A second piezoelectric actuator is mechanically coupled to the rotor, and is electrically coupled between a second signal node and the common voltage node. Control circuitry includes a drive circuit configured to drive the first and second piezoelectric actuators, a sense circuit configured to process sense signals generated by the first and second pizeoelectric actuators, and a multiplexing circuit. The multiplexing circuit is configured to alternate between connecting the drive circuit to the first piezoelectric actuator while connecting the sense circuit to the second piezoelectric actuator, and connecting the drive circuit to the second piezoelectric actuator while connecting the sense circuit to the first piezoelectric actuator.

97. 发明公开

US20240088868A1 RESONATOR 审中-公开
公开(公告)号：US20240088868A1
公开(公告)日：2024-03-14
申请号：US17941037
申请日：2022-09-09
申请人： AAC Technologies Pte. Ltd.
发明人： Benedict Slotte
IPC分类号： H03H9/15
CPC分类号： H03H9/15
摘要： Provided is a resonator. The resonator includes: at least one air cavity and a plurality of air passages communicating with the air cavity. The air cavity and the plurality of air passages are tuned to generate one or more acoustic resonances. Therefore, the desired low acoustic damping can be reasonably well maintained, while distributing higher modes over a wider set of frequencies, while also making each of them proportionally weaker. Thus, they may be more easily made weak enough not to interfere with the desired behaviour of the overall acoustic resonator construction.

98. 发明公开

US20230246629A1 LAYERS, STRUCTURES, ACOUSTIC WAVE RESONATORS, DEVICES, CIRCUITS AND SYSTEMS 审中-公开
公开(公告)号：US20230246629A1
公开(公告)日：2023-08-03
申请号：US18094387
申请日：2023-01-08
申请人： QXONIX INC.
发明人： DARIUSZ BURAK , KEVIN J. GRANNEN , JACK LENELL
IPC分类号： H03H9/15 , H01Q21/00 , H01Q9/04 , H03H9/56
CPC分类号： H03H9/15 , H01Q21/00 , H01Q9/0407 , H03H9/568
摘要： Techniques for improving acoustic resonators and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a plurality of piezoelectric layers including first and second piezoelectric layers acoustically coupled with one another and arranged over the substrate. The first and second piezoelectric layers may have respective piezoelectric axis orientations. The first and second piezoelectric layers may have respective thicknesses. An example system may comprise an oscillator circuit coupled with the bulk acoustic wave (BAW) resonator. For example, a radar system may comprise the oscillator circuit coupled with the bulk acoustic wave (BAW) resonator.

99. 发明授权

US11632095B2 Wafer level surface acoustic wave filter and package method 有权
公开(公告)号：US11632095B2
公开(公告)日：2023-04-18
申请号：US17544124
申请日：2021-12-07
申请人： Spreadtrum Communications (Shanghai) Co., Ltd.
发明人： Jing Chen , Cong Liang
IPC分类号： H03H9/10 , H03H9/02 , H03H9/15 , H03H9/64
摘要： Embodiments of the present application provide a wafer level surface acoustic wave filter and a package method, the surface acoustic wave filter includes a wafer, an electrode layer, a supporting wall and a cover plate; wherein, the wafer includes a substrate layer and a piezoelectric thin film layer combined together by wafer bonding, the electrode layer is arranged on a surface of the piezoelectric thin film layer, the supporting wall surrounds between the piezoelectric thin film layer and the cover plate to form a sealed cavity; and the cover plate includes at least a first material layer, which uses the same material as the substrate layer.

100. 发明授权

US11601106B2 Thin-film bulk acoustic resonator and semiconductor apparatus comprising the same 有权
公开(公告)号：US11601106B2
公开(公告)日：2023-03-07
申请号：US16868373
申请日：2020-05-06
申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION , NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION
发明人： Herb He Huang , Clifford Ian Drowley , Jiguang Zhu , Halting Li
IPC分类号： H03H3/02 , H03H9/17 , H03H9/05 , H03H9/58 , H03H9/10 , H01L27/20 , H03H3/007 , H03H9/02 , H03H9/15
摘要： A thin-film bulk acoustic resonator (FBAR) apparatus includes a lower dielectric layer including a first cavity; an upper dielectric layer including a second cavity, wherein the upper dielectric layer is on the lower dielectric layer; and an acoustic resonance film that is positioned between and separating the first and the second cavities. The acoustic resonance film includes a lower electrode layer, an upper electrode layer, and a piezoelectric film that is sandwiched between the lower and upper electrode layers. A plan view of the first and the second cavities overlap to form an overlapped region having a polygonal shape without parallel sides.

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