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11. 发明授权

US07312951B2 Magnetic head for perpendicular magnetic recording 有权
标题翻译：用于垂直磁记录的磁头
公开(公告)号：US07312951B2
公开(公告)日：2007-12-25
申请号：US11038390
申请日：2005-01-21
申请人： Kei Hirata , Kiyoshi Noguchi , Tetsuya Roppongi , Atsushi Yamaguchi
发明人： Kei Hirata , Kiyoshi Noguchi , Tetsuya Roppongi , Atsushi Yamaguchi
IPC分类号： G11B5/127 , G11B5/147 , G11B5/133 , G11B5/33
CPC分类号： G11B5/1278 , Y10T428/115 , Y10T428/1186
摘要： The invention provides a magnetic head for perpendicular magnetic recording having an air bearing surface positioned facing the recording surface of a recording medium, which records magnetic information on the recording medium by generating magnetic flux toward the recording surface of the recording medium, and comprises a magnetic pole which generates magnetic flux toward the recording surface of the recording medium and a return yoke having one end connected to the magnetic pole and the other end positioned facing the recording surface of the recording medium, wherein the material composing the magnetic pole has a magnetostriction constant λ of at least 0 and less than 10×10−6, with a parameter P represented by the formula: P=Hk/(λ×σ) (where Hk represents the magnetic anisotropic field (A/m), σ represents the stress (MPa) and λ represents the magnetostriction constant) of larger than 0.1 and less than 200.
摘要翻译：本发明提供了一种用于垂直磁记录的磁头，其具有面向记录介质的记录表面的空气轴承表面，其通过向记录介质的记录表面产生磁通量而将磁信息记录在记录介质上，并且包括磁向记录介质的记录表面产生磁通的磁极和一个与磁极相连的一端的返回磁轭和面对记录介质的记录表面的另一端，其中构成磁极的材料具有磁致伸缩常数 λ至少为0且小于10×10 -6，具有由以下公式表示的参数P：P = Hk /（lambdaxsigma）（其中Hk表示磁各向异性场（A / m），σ 表示应力（MPa），λ表示磁致伸缩常数）大于0.1且小于200。

12. 发明申请

US20060262457A1 Magnetic field sensor provided with an upper shield layer having portions with different magnetostriction 失效
公开(公告)号：US20060262457A1
公开(公告)日：2006-11-23
申请号：US11411107
申请日：2006-04-26
申请人： Kei Hirata , Takahiko Machita , Koji Shimazawa , Kiyoshi Noguchi
发明人： Kei Hirata , Takahiko Machita , Koji Shimazawa , Kiyoshi Noguchi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3912 , B82Y10/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996
摘要： A magnetic field sensor comprises: a magnetic field detecting element that detects magnitude of an external magnetic field based on electric resistance of the magnetic field detecting element to sense current, the electric resistance being varied in accordance with the external magnetic field; an upper shield layer that is formed to cover the magnetic field detecting element; and a protective layer that is formed above the upper shield layer with respect to a direction of stacking. The upper shield layer includes a first portion at least part of which covers a top surface of the magnetic field detecting element, and a second portion that covers the first portion, and, the first portion has a larger absolute value of magnetostriction than the second portion.

13. 发明申请

US20060098335A1 Magnetic head for perpendicular magnetic recording, head gimbal assembly, head arm assembly and magnetic disk drive 有权
标题翻译：用于垂直磁记录的磁头，磁头万向架组件，磁头臂组件和磁盘驱动器
公开(公告)号：US20060098335A1
公开(公告)日：2006-05-11
申请号：US11266289
申请日：2005-11-04
申请人： Kei Hirata , Atsushi Yamaguchi , Tetsuya Roppongi , Kiyoshi Noguchi
发明人： Kei Hirata , Atsushi Yamaguchi , Tetsuya Roppongi , Kiyoshi Noguchi
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3113 , G11B5/3116
摘要： A pole layer incorporate a track width defining and a wide portion. A material forming the pole layer is an alloy whose major elements are iron and nickel. In the alloy, where the proportions of iron and nickel with respect to the total of iron and nickel are indicated as (100-M) weight % and M weight %, respectively, M is greater than 0 and smaller than or equal to 10. The internal stress of the pole layer is a tensile stress. The magnetostriction constant of the material forming the pole layer is positive. Where the anisotropy field of the pole layer is Hk (A/m), the magnetostriction constant of the material forming the pole layer is λ(×10−6), and the internal stress of the pole layer is σ (MPa), the value of Hk/(λ×σ) is greater than 0.01 and smaller than 0.2.
摘要翻译：极层包含限定的轨道宽度和宽的部分。形成极层的材料是其主要元素是铁和镍的合金。在合金中，铁和镍相对于铁和镍总量的比例分别表示为（100-M）重量％和M重量％，M大于0且小于或等于10。极层的内应力是拉伸应力。形成极层的材料的磁致伸缩常数为正。在极层的各向异性场为Hk（A / m）的情况下，形成极层的材料的磁致伸缩常数为λ（×10 -6 -6），极层的内应力为 sigma（MPa），Hk /（lambdaxsigma）的值大于0.01且小于0.2。

14. 发明申请

US20050286170A1 Magnetic head for perpendicular magnetic recording 有权
标题翻译：用于垂直磁记录的磁头
公开(公告)号：US20050286170A1
公开(公告)日：2005-12-29
申请号：US11038390
申请日：2005-01-21
申请人： Kei Hirata , Kiyoshi Noguchi , Tetsuya Roppongi , Atsushi Yamaguchi
发明人： Kei Hirata , Kiyoshi Noguchi , Tetsuya Roppongi , Atsushi Yamaguchi
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , Y10T428/115 , Y10T428/1186
摘要： The invention provides a magnetic head for perpendicular magnetic recording having an air bearing surface positioned facing the recording surface of a recording medium, which records magnetic information on the recording medium by generating magnetic flux toward the recording surface of the recording medium, and comprises a magnetic pole which generates magnetic flux toward the recording surface of the recording medium and a return yoke having one end connected to the magnetic pole and the other end positioned facing the recording surface of the recording medium, wherein the material composing the magnetic pole has a magnetostriction constant λ of at least 0 and less than 10×10−6, with a parameter P represented by the formula: P=Hk/(λ×σ) (where Hk represents the magnetic anisotropic field (A/m), σ represents the stress (MPa) and λ represents the magnetostriction constant) of larger than 0.1 and less than 200.
摘要翻译：本发明提供了一种用于垂直磁记录的磁头，其具有面向记录介质的记录表面的空气轴承表面，其通过向记录介质的记录表面产生磁通量而将磁信息记录在记录介质上，并且包括磁向记录介质的记录表面产生磁通的磁极和一个与磁极相连的一端的返回磁轭和面对记录介质的记录表面的另一端，其中构成磁极的材料具有磁致伸缩常数 λ至少为0且小于10×10 -6，具有由以下公式表示的参数P：P = Hk /（lambdaxsigma）（其中Hk表示磁各向异性场（A / m），σ 表示应力（MPa），λ表示磁致伸缩常数）大于0.1且小于200。

15. 发明申请

US20050264934A1 Thin-film magnetic head, head gimbal assembly with thin-film magnetic head, head arm assembly with head gimbal assembly, magnetic disk drive apparatus with head gimbal assembly and manufacturing method of thin-film magnetic head 失效
标题翻译：薄膜磁头，具有薄膜磁头的头万向架组件，带头万向架组件的头臂组件，头万向架组件的磁盘驱动装置和薄膜磁头的制造方法
公开(公告)号：US20050264934A1
公开(公告)日：2005-12-01
申请号：US11139697
申请日：2005-05-31
申请人： Taro Oike , Hiraku Hirabayashi , Shin Narushima , Takamitsu Sakamoto , Kiyoshi Noguchi
发明人： Taro Oike , Hiraku Hirabayashi , Shin Narushima , Takamitsu Sakamoto , Kiyoshi Noguchi
IPC分类号： G11B5/147 , G11B5/187 , G11B5/31
CPC分类号： G11B5/187 , G11B5/3116 , G11B5/3163
摘要： A thin-film magnetic head comprising an inductive element including at least: a lower magnetic pole; a write gap layer; and an upper magnetic pole opposed to the lower magnetic pole through the write gap layer, a width WP2 in a track-width direction at a facing-to-magnetic-medium top end of the upper magnetic pole being larger than a width WP1 in the track-width direction at a facing-to-magnetic-medium top end of the lower magnetic pole, and a distance FPDP2 between the top end of the upper magnetic pole and a flare point of the upper magnetic pole being smaller than a distance FPDP1 between the top end of the lower magnetic pole and a flare point of the lower magnetic pole, is provided.
摘要翻译：一种薄膜磁头，包括至少包括下磁极的感应元件; 写间隙层; 以及通过写入间隙层与下部磁极相对的上部磁极，在上部磁极的面对磁性介质顶端的轨道宽度方向上的宽度W P2 大于在下磁极的面对磁介质顶端处的轨道宽度方向上的宽度W P1 P1和之间的距离FPD P2 被提供。

16. 发明申请

US20050013044A1 Perpendicular magnetic recording element, magnetic head, magnetic head device and magnetic recording/reproducing apparatus 有权
标题翻译：垂直磁记录元件，磁头，磁头装置和磁记录/重放装置
公开(公告)号：US20050013044A1
公开(公告)日：2005-01-20
申请号：US10891182
申请日：2004-07-15
申请人： Kei Hirata , Kiyoshi Noguchi , Tetsuya Mino , Tetsuya Roppongi
发明人： Kei Hirata , Kiyoshi Noguchi , Tetsuya Mino , Tetsuya Roppongi
IPC分类号： G11B5/31 , G11B5/127
CPC分类号： G11B5/127
摘要： The soft magnetic film takes its hard axis along the direction in which a magnetic field is generated and its easy axis along a direction perpendicular to the direction of the writer magnetic field. The magnetic bias film applies a magnetic bias along the easy axis to the soft magnetic film.
摘要翻译：软磁性膜沿其沿着写入磁场方向垂直的方向沿其产生磁场的方向和其容易的轴取其硬轴。磁偏置膜沿着容易的轴向磁性膜施加磁偏置。

17. 发明授权

US5968676A Magnetoresistance effect film and magnetoresistance effect type head 失效
标题翻译：磁阻效应膜和磁阻效应型头
公开(公告)号：US5968676A
公开(公告)日：1999-10-19
申请号：US993019
申请日：1997-12-18
申请人： Satoru Araki , Kiyoshi Noguchi
发明人： Satoru Araki , Kiyoshi Noguchi
IPC分类号： G11B5/31 , G11B5/39 , H01F10/08 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/3268 , H01L43/10 , B41J2002/041 , G11B2005/3996 , G11B5/3163 , Y10S428/90 , Y10T428/1107
摘要： A spin valve type magnetoresistance effect film comprises a magnetic multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, and an antiferromagnetic layer which is formed on a surface of the ferromagnetic layer remote from a surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromagnetic layer. The antiferromagnetic layer contains oxygen as impurities and a concentration of oxygen contained in the antiferromagnetic layer is set to 1 to 2,000 atomic ppm. With this arrangement, there can be provided a magnetoresistance effect film having a high-quality antiferromagnetic layer which is excellent in thermal stability, sufficiently high in blocking temperature and highly excellent in pinning effect. Further, there can be provided a magnetoresistance effect type head which is excellent in thermal stability, high in magnetic field sensitivity and large in MR change ratio.
摘要翻译：自旋阀型磁阻效应膜包括：包含非磁性金属层的磁性多层膜，形成在非磁性金属层的一个表面上的铁磁层，形成在非磁性金属的另一个表面上的软磁性层层和反铁磁层，其形成在铁磁层的远离其与非磁性金属层相邻的表面的表面上，以便引导铁磁层的磁化方向。反铁磁性层含有氧作为杂质，反铁磁性层中所含的氧浓度为1〜2000原子ppm。通过这种布置，可以提供具有优异的热稳定性，阻断温度足够高，钉扎效果优异的高品质反铁磁层的磁阻效应膜。此外，可以提供热稳定性优异，磁场灵敏度高，MR变化率大的磁阻效应型头。

18. 发明授权

US5958611A Magnetic multilayered film, magnetoresistance effect element and magnetoresistance device 失效
标题翻译：磁性多层膜，磁阻效应元件和磁阻器件
公开(公告)号：US5958611A
公开(公告)日：1999-09-28
申请号：US873739
申请日：1997-06-12
申请人： Manabu Ohta , Kiyoshi Noguchi , Masashi Sano , Satoru Araki , Taro Oike
发明人： Manabu Ohta , Kiyoshi Noguchi , Masashi Sano , Satoru Araki , Taro Oike
IPC分类号： G11B5/31 , G11B5/39 , H01F10/08 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/3268 , H01L43/10 , G11B2005/3996 , G11B5/3163 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/24355
摘要： According to the present invention, a magnetic multilayered film includes an oxide antiferromagnetic layer, a pinned ferromagnetic layer which is pinned by the oxide antiferromagnetic layer, a non-magnetic metal layer and a free ferromagnetic layer which are stacked on a substrate in order. A surface roughness Ra of the oxide antiferromagnetic layer at the side of the pinned ferromagnetic layer is set to no greater than 0.6 nm, and a crystal grain size D of the oxide antiferromagnetic layer is set to a value in the range of 10 to 40 nm. Thus, the magnetic multilayered film has the large exchange-coupling magnetic field and MR ratio and MR sensitivity. The magnetic multilayered film may be applied to a magnetoresistance effect element which may also applied to a magnetoresistance device, such as, a magnetoresistance effect type head. The magnetoresistance effect element having such a magnetic multilayered film is capable of obtaining high outputs. The magnetoresistance effect type head having such a magnetoresistance effect element which is excellent in current efficiency and capable of detecting signals magnetically recorded in high density, particularly in ultrahigh density exceeding 3 Gbit/inch.sup.2 and further obtaining large outputs.
摘要翻译：根据本发明，磁性多层膜包括氧化物反铁磁性层，由氧化物反铁磁层固定的钉扎铁磁性层，依次层叠在基板上的非磁性金属层和自由铁磁性层。在被钉扎的铁磁层一侧的氧化物反铁磁性层的表面粗糙度Ra被设定为不大于0.6nm，并且氧化物反铁磁性层的晶粒尺寸D设定在10至40nm的范围内的值。因此，磁性多层膜具有大的交换耦合磁场和MR比和MR灵敏度。可以将磁性多层膜施加到也可以施加到诸如磁阻效应型头的磁阻器件的磁阻效应元件。具有这种磁性多层膜的磁阻效应元件能够获得高输出。具有这样的磁阻效应元件的磁电阻效应型头具有优异的电流效率，能够检测高密度地磁记录的信号，特别是超过3Gbit / inch2的超高密度，并进一步获得大的输出。

19. 发明授权

US4594296A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US4594296A
公开(公告)日：1986-06-10
申请号：US562071
申请日：1983-12-16
申请人： Kiyoshi Noguchi , Kouji Kobayashi , Suguru Takayama
发明人： Kiyoshi Noguchi , Kouji Kobayashi , Suguru Takayama
IPC分类号： G11B5/706 , G11B5/64 , G11B5/65 , G11B5/66 , G11B5/716 , G11B5/85
CPC分类号： G11B5/66 , G11B5/716 , Y10S428/928 , Y10T428/12458 , Y10T428/12465 , Y10T428/12861
摘要： A magnetic recording medium which comprises a magnetic layer formed on a substrate and comprising Co, or Co and one to three elements selected from the group consisting of Ni, Cr and O, wherein, when the magnetic layer is divided equally into four portions in the direction of the thickness of the magnetic layer, the density of the portion located farthest from the substrate is greater by at least 20% than the average density of three other portions.
摘要翻译：一种磁记录介质，包括形成在基底上的包含Co或Co的磁性层和从由Ni，Cr和O组成的组中选择的一种至三种元素的磁性层，其中当磁性层被均匀地分成四部分时磁性层的厚度方向，距离基板最远的部分的密度比三个其它部分的平均密度大至少20％。

20. 发明授权

US08492809B2 Spin injection electrode structure, spin transport element, and spin transport device 有权
标题翻译：自旋注入电极结构，自旋传输元件和自旋传输装置
公开(公告)号：US08492809B2
公开(公告)日：2013-07-23
申请号：US13216965
申请日：2011-08-24
申请人： Tomoyuki Sasaki , Tohru Oikawa , Kiyoshi Noguchi , Toshio Suzuki
发明人： Tomoyuki Sasaki , Tohru Oikawa , Kiyoshi Noguchi , Toshio Suzuki
IPC分类号： H01L29/82
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1675 , H01L29/82
摘要： The present invention provides a spin injection electrode structure, a spin transport element, and a spin transport device which enable effective spin injection in a silicon channel layer at room temperature. A spin injection electrode structure IE comprises a silicon channel layer 12, a first magnesium oxide film 13A disposed on a first part of the silicon channel layer 12, and a first ferromagnetic layer 14A disposed on the first magnesium oxide film 13A. The first magnesium oxide film 13A partly includes a first lattice-matched part P lattice-matched with both of the silicon channel layer 12 and the first ferromagnetic layer 14A.
摘要翻译：本发明提供一种自旋注入电极结构，自旋传输元件和自旋传输器件，其能够在室温下在硅沟道层中有效地自旋注入。自旋注入电极结构IE包括硅沟道层12，设置在硅沟道层12的第一部分上的第一氧化镁膜13A和设置在第一氧化镁膜13A上的第一铁磁层14A。第一氧化镁膜13A部分地包括与硅沟道层12和第一铁磁层14A两者晶格匹配的第一晶格匹配部分P.

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