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11. 发明授权

US08497154B2 Solar cell system manufacturing method 有权
标题翻译：太阳能电池系统制造方法
公开(公告)号：US08497154B2
公开(公告)日：2013-07-30
申请号：US13572765
申请日：2012-08-13
申请人： Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
发明人： Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01L31/022425 , H01L31/047 , Y02E10/50
摘要： A method for manufacturing a solar cell system includes the following steps. First, a number of P-N junction cell preforms are provided. The number of the P-N junction cell preforms is M. The M P-N junction cell preforms is named from a first P-N junction cell preform to a Mth P-N junction cell preform. Second, the M P-N junction cell preforms are arranged along a straight line. Third, an inner electrode preform is formed between each two adjacent P-N junction cell preforms, wherein at least one inner electrode is a carbon nanotube array. Axial directions of the carbon nanotubes in the carbon nanotube array are parallel to the straight line.
摘要翻译：一种制造太阳能电池系统的方法包括以下步骤。首先，提供多个P-N结电池预制件。 P-N结电池预制件的数量为M.M P-N结电池预制件由第一P-N结电池预制件命名为第M个P-N结电池预制件。第二，M P-N结电池预制件沿直线布置。第三，在每个两个相邻的P-N结电池预制件之间形成内部电极预制件，其中至少一个内部电极是碳纳米管阵列。碳纳米管阵列中的碳纳米管的轴向平行于直线。

12. 发明授权

US09555562B2 Method for making nano-scale film 有权
标题翻译：制作纳米级膜的方法
公开(公告)号：US09555562B2
公开(公告)日：2017-01-31
申请号：US11982487
申请日：2007-11-02
申请人： Li-Na Zhang , Yao-Jun Zhang , Yi Ren , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Li-Na Zhang , Yao-Jun Zhang , Yi Ren , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： B29C41/12
CPC分类号： B29C41/12
摘要： A method for making a nano-scale film includes the steps of: (a) providing a suspension including an organic solvent and a number of nano-scale particles dispersed therein; (b) dropping/releasing the suspension into a liquid having a specific gravity greater than that of the nano-scale particles; and (c) forming a uniform film of nano-scale particles on the surface of the liquid.
摘要翻译：制备纳米级膜的方法包括以下步骤：（a）提供包含分散在其中的有机溶剂和许多纳米级颗粒的悬浮液; （b）将悬浮液滴入/释放到比重大于纳米级颗粒的液体的液体中; 和（c）在液体表面上形成均匀的纳米级颗粒膜。

13. 发明授权

US08778709B2 Method for making light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US08778709B2
公开(公告)日：2014-07-15
申请号：US13479229
申请日：2012-05-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/0079 , H01L33/0066 , H01L33/06 , H01L33/22 , H01L33/24
摘要： A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer.
摘要翻译：制造发光二极管的方法包括以下步骤。提供基板。在衬底的表面上生长第一半导体层。图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。暴露的第一半导体层被蚀刻以形成突出的一对。通过去除图案化掩模层形成多个三维纳米结构。在三维纳米结构的数量上依次生长有源层和第二半导体层。第一电极与第一半导体层电连接。第二电极被定位成覆盖远离有源层的第二半导体层的整个表面。

14. 发明授权

US08621746B2 Method for making phase change memory 有权
标题翻译：相变存储器的方法
公开(公告)号：US08621746B2
公开(公告)日：2014-01-07
申请号：US13332486
申请日：2011-12-21
申请人： Peng Liu , Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
发明人： Peng Liu , Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
IPC分类号： H01R43/00
CPC分类号： H01L45/06 , H01L45/126 , H01L45/144
摘要： A method for making phase change memory is provided. The method includes following steps. A substrate is provided. A plurality of first row electrode leads and the second row electrode leads is located on the substrate. A carbon nanotube layer is applied on the substrate to cover the first row electrode lead and the second row electrode lead. The carbon nanotube layer is patterned to form a plurality of carbon nanotube units located on the second row electrode lead. A phase change layer is applied on the surface of each carbon nanotube unit. A plurality of first electrodes, a plurality of second electrodes, a plurality of first row electrode leads and a plurality of second row electrode leads is located on the substrate.
摘要翻译：提供了一种制造相变存储器的方法。该方法包括以下步骤。提供基板。多个第一行电极引线和第二行电极引线位于基板上。在基板上涂布碳纳米管层以覆盖第一行电极引线和第二行电极引线。图案化碳纳米管层以形成位于第二行电极引线上的多个碳纳米管单元。在每个碳纳米管单元的表面上施加相变层。多个第一电极，多个第二电极，多个第一行电极引线和多个第二行电极引线位于基板上。

15. 发明授权

US08597990B2 Method for making thin film transistor 有权
公开(公告)号：US08597990B2
公开(公告)日：2013-12-03
申请号：US12384241
申请日：2009-04-02
申请人： Qun-Qing Li , Xue-Shen Wang , Kai-Li Jiang , Shou-Shan Fan
发明人： Qun-Qing Li , Xue-Shen Wang , Kai-Li Jiang , Shou-Shan Fan
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/6675 , B82Y10/00 , B82Y40/00 , H01L29/0665 , H01L29/0673 , H01L51/0012 , H01L51/0048 , H01L51/0541
摘要： A method for making a thin film transistor, the method comprising the steps of: providing an insulating substrate; forming a carbon nanotube layer on the insulating substrate, the carbon nanotube layer includes a plurality of carbon nanotubes; applying a source electrode and a drain electrode spaced from each other and electrically connected to two opposite ends of at least one of carbon nanotubes; covering the carbon nanotube layer with an insulating layer; and placing a gate electrode on the insulating layer, the gate electrode being opposite to and electrically insulated from the carbon nanotube layer by the insulating layer.

16. 发明授权

US08211398B2 Method for making semiconducting carbon nanotubes 有权
标题翻译：制造半导体碳纳米管的方法
公开(公告)号：US08211398B2
公开(公告)日：2012-07-03
申请号：US12952536
申请日：2010-11-23
申请人： Xue-Shen Wang , Qun-Qing Li , Shou-Shan Fan
发明人： Xue-Shen Wang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： B82Y40/00 , D01F9/12
CPC分类号： B82Y40/00 , B01J23/745 , B01J35/0013 , B01J37/08 , B82Y30/00 , C01B32/162 , C01B2202/22 , Y10S977/742 , Y10S977/842
摘要： A method for making semiconducting carbon nanotubes is provided. A catalyst precursor is disposed on a substrate. The catalyst precursor includes blood. Organic substances contained in the blood are removed and iron ions contained in the blood are oxidized to yield discrete ferric oxide nano-particles on the substrate. The ferric oxide nano-particles are reduced to yield isolated iron nano-particles on the substrate. Carbon nanotubes then grow on the iron nano-particles.
摘要翻译：提供制造半导体碳纳米管的方法。催化剂前体设置在基板上。催化剂前体包括血液。血液中含有的有机物被除去，血液中含有的铁离子被氧化，在基底上产生离散的三氧化二铁纳米粒子。还原氧化亚铁纳米颗粒以在基底上产生分离的铁纳米颗粒。然后碳纳米管在铁纳米颗粒上生长。

17. 发明授权

US08197598B2 Method for manufacturing iron silicide nano-wires 有权
标题翻译：铁硅化物纳米线的制造方法
公开(公告)号：US08197598B2
公开(公告)日：2012-06-12
申请号：US12291300
申请日：2008-11-06
申请人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C30B25/00
CPC分类号： C01B33/06 , Y10S117/902
摘要： A method for making iron silicide nano-wires comprises the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of iron powder into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600˜1200° C.
摘要翻译：制造铁硅化物纳米线的方法包括以下步骤。首先，提供增长的衬底和生长装置，该生长装置包括加热装置和反应室。其次，将生长的基材和一定量的铁粉放入反应室。第三，将含硅气体引入反应室。最后，将反应室加热至600〜1200℃

18. 发明授权

US08154011B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08154011B2
公开(公告)日：2012-04-10
申请号：US12384281
申请日：2009-04-02
申请人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L29/06
CPC分类号： H01L51/0558 , B82Y10/00 , H01L51/0048 , H01L51/0541 , H01L51/0545 , H01L51/102 , Y10S977/762
摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, a channel and a gate electrode. The drain electrode is spaced from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The channel includes a plurality of carbon nanotube wires, one end of each carbon nanotube wire is connected to the source electrode, and opposite end of each the carbon nanotube wire is connected to the drain electrode.
摘要翻译：薄膜晶体管包括源电极，漏电极，半导体层，沟道和栅电极。漏电极与源电极间隔开。栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。通道包括多个碳纳米管线，每个碳纳米管线的一端连接到源电极，并且每个碳纳米管线的相对端连接到漏电极。

19. 发明授权

US08101953B2 Thin film transistor having a plurality of carbon nanotubes 有权
标题翻译：具有多个碳纳米管的薄膜晶体管
公开(公告)号：US08101953B2
公开(公告)日：2012-01-24
申请号：US12384329
申请日：2009-04-02
申请人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112 , H01L27/108 , H01L29/04 , H01L29/12 , H01L31/0376 , H01L31/20
CPC分类号： H01L51/0012 , B82Y10/00 , H01L51/0048 , H01L51/0541 , H01L51/0545 , H01L51/0562 , Y10S977/723 , Y10S977/842 , Y10S977/938
摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer includes at least two stacked carbon nanotube films. Each carbon nanotube film includes an amount of carbon nanotubes. At least a part of the carbon nanotubes of each carbon nanotube film are aligned along a direction from the source electrode to the drain electrode.
摘要翻译：薄膜晶体管包括源电极，漏电极，半导体层和栅电极。漏电极与源电极间隔开。半导体层连接到源电极和漏电极。栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。半导电层包括至少两个堆叠的碳纳米管膜。每个碳纳米管膜包括一定量的碳纳米管。每个碳纳米管膜的碳纳米管的至少一部分沿着从源电极到漏电极的方向排列。

20. 发明授权

US08021902B2 Method for fabricating light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US08021902B2
公开(公告)日：2011-09-20
申请号：US12584386
申请日：2009-09-03
申请人： Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
发明人： Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , B82Y20/00 , B82Y30/00 , Y10S977/742
摘要： A method of fabricating a light emitting diode includes the following steps. A substrate is provided and a first semiconductor layer, an active layer, and a second semiconductor layer are placed on the substrate. A carbon nanotube structure is provided and the carbon nanotube structure is lie on the second semiconductor layer. A first electrode is formed on the carbon nanotube structure. A portion of the first semiconductor layer is exposed and a second electrode is formed on the exposed portion of the first semiconductor layer to obtain the light emitting diode.
摘要翻译：制造发光二极管的方法包括以下步骤。提供衬底，并且在衬底上放置第一半导体层，有源层和第二半导体层。提供碳纳米管结构，碳纳米管结构位于第二半导体层上。在碳纳米管结构上形成第一电极。暴露第一半导体层的一部分，并且在第一半导体层的暴露部分上形成第二电极以获得发光二极管。

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