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1. 发明授权

US10062857B2 Carbon nanotube vacuum transistors 有权
公开(公告)号：US10062857B2
公开(公告)日：2018-08-28
申请号：US15594233
申请日：2017-05-12
申请人： International Business Machines Corporation
发明人： Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu
IPC分类号： H01L51/10 , H01L51/05 , H01L51/00 , H01J21/10 , H01L29/06
CPC分类号： H01L51/0562 , H01J21/105 , H01L29/0673 , H01L51/0017 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0558
摘要： Vacuum transistors with carbon nanotube as the collector and/or emitter electrodes are provided. In one aspect, a method for forming a vacuum transistor includes the steps of: covering a substrate with an insulating layer; forming a back gate(s) in the insulating layer; depositing a gate dielectric over the back gate; forming a carbon nanotube layer on the gate dielectric; patterning the carbon nanotube layer to provide first/second portions thereof over first/second sides of the back gate, separated from one another by a gap G, which serve as emitter and collector electrodes; forming a vacuum channel in the gate dielectric; and forming metal contacts to the emitter and collector electrodes. Vacuum transistors are also provided.

2. 发明申请

US20180211984A1 ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180211984A1
公开(公告)日：2018-07-26
申请号：US15500125
申请日：2017-01-18
申请人： Shenzhen China Star Optoelectronics Technology Co. , Ltd.
发明人： Mian Zeng
IPC分类号： H01L27/12 , H01L51/05
CPC分类号： H01L27/1251 , G02F1/1368 , G02F2001/136245 , G02F2001/13685 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/77 , H01L27/12 , H01L27/1225 , H01L27/1237 , H01L27/127 , H01L27/1292 , H01L27/1296 , H01L29/401 , H01L29/41733 , H01L29/78603 , H01L29/78636 , H01L29/78648 , H01L29/7869 , H01L29/78696 , H01L51/0512 , H01L51/0554 , H01L51/0558 , H01L51/0562 , H01L51/105 , H05K2203/0384
摘要： Disclosed are an array substrate and a method for manufacturing the same. The array substrate includes a transmission gate structure having an upper thin film transistor and a lower thin film transistor. An active layer of the lower TFT is the first active layer, and an active layer of the upper TFT is the second active layer. The first active layer and the second active layer are provided on two sides of a source and drain layer, respectively, and share source and drain electrodes. Compared with the prior art, such structure is simpler, and furthermore it facilitates simplification of a manufacturing process of the transmission gate structure and improves a success rate of preparation thereof.

3. 发明申请

US20180006252A1 NANO-SCALE TRANSISTOR 审中-公开
公开(公告)号：US20180006252A1
公开(公告)日：2018-01-04
申请号：US15613182
申请日：2017-06-03
申请人： Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
发明人： JIN ZHANG , YANG WEI , KAI-LI JIANG , SHOU-SHAN FAN
IPC分类号： H01L51/05 , H01L51/42 , H01L51/00 , B82Y20/00 , B82Y10/00 , B82Y40/00 , C30B33/00 , C30B29/46
CPC分类号： H01L51/0562 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C30B29/46 , C30B33/00 , H01L27/30 , H01L51/0012 , H01L51/0026 , H01L51/0048 , H01L51/4213 , Y10S977/75 , Y10S977/827 , Y10S977/842 , Y10S977/938 , Y10S977/954
摘要： The present disclosure relates to a nano-scale transistor. The nano-scale transistor includes a source electrode, a drain electrode, a gate electrode and a nano-heterostructure. The nano-heterostructure is electrically coupled with the source electrode and the drain electrode. The gate electrode is insulated from the nano-heterostructure, the source electrode and the drain electrode via an insulating layer. The nano-heterostructure includes a first carbon nanotube, a second carbon nanotube and a semiconductor layer. The semiconductor layer includes a first surface and a second surface opposite to the first surface. The first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface.

4. 发明申请

US20170237042A1 Organic Electroluminescent Transistor 审中-公开
公开(公告)号：US20170237042A1
公开(公告)日：2017-08-17
申请号：US15413838
申请日：2017-01-24
申请人： E.T.C. S.R.L. , Flexterra, Inc.
发明人： Viviana BIONDO , Gianluca GENERALI , Andrea STEFANI , Michele MUCCINI , Guido TURATTI , Mitchell DENTI , Hakan USTA , Xiaoyan CHEN , Antonio FACCHETTI
IPC分类号： H01L51/52
CPC分类号： H01L51/5296 , C07D495/04 , H01L51/0061 , H01L51/0072 , H01L51/0074 , H01L51/0085 , H01L51/0562 , H01L51/5012 , H01L51/5016 , H01L2251/301 , H01L2251/303 , H01L2251/305 , H01L2251/308
摘要： The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.

5. 发明申请

US20170170267A1 STACKED CARBON NANOTUBE MULTIPLE THRESHOLD DEVICE 有权
公开(公告)号：US20170170267A1
公开(公告)日：2017-06-15
申请号：US15224480
申请日：2016-07-29
申请人： International Business Machines Corporation
发明人： Sami Rosenblatt , Rasit O Topaloglu
IPC分类号： H01L29/06 , H01L29/423
CPC分类号： H01L29/0673 , B82Y10/00 , H01L27/283 , H01L29/42392 , H01L29/775 , H01L51/0048 , H01L51/0558 , H01L51/0562 , H01L51/057 , Y10S977/75 , Y10S977/938
摘要： A device structure including a gate structure containing a first layer of carbon nanotubes and a second layer of carbon nanotubes. The first and the second layers are stacked vertically. The first and the second layers have carbon nanotubes which have substantially homogeneous electric characteristics within each layer. The carbon nanotubes in the first layer have different electric characteristics than the carbon nanotubes in the second layer, so that the device structure exhibits a multiple threshold behavior when coupled to a voltage source. The disclosure also includes a method for fabricating a multithreshold device structure.

6. 发明申请

US20170141319A1 CARBON NANOTUBE INTERLAYER, MANUFACTURING METHOD THEREOF, AND THIN FILM TRANSISTOR USING THE SAME 审中-公开
公开(公告)号：US20170141319A1
公开(公告)日：2017-05-18
申请号：US15309800
申请日：2015-05-14
申请人： DONGGUK UNIVERSITY INDUSTRAY-ACADEMIC COOPERATION FOUNDATION
发明人： Yong Young NOH
IPC分类号： H01L51/00 , H01L51/10 , H01L51/05
CPC分类号： H01L51/0049 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/0048 , H01L51/0516 , H01L51/052 , H01L51/0541 , H01L51/055 , H01L51/0558 , H01L51/0562 , H01L51/10 , H01L2251/301 , H01L2251/303
摘要： The present invention relates to a carbon nanotube interlayer, a manufacturing method thereof, and a thin film transistor using the same. More specifically, the present invention provides a carbon nanotube interlayer, a manufacturing method thereof, and a thin film transistor using the same, where the carbon nanotube interlayer is a layer constituting an organic thin film transistor and comprising a conjugated polymer and a single-walled carbon nanotube between an organic semiconductor layer and a source/drain electrode. The conjugated polymer selectively wraps the single-walled carbon nanotube having semiconducting properties.

7. 发明授权

US09634291B2 Organic light-emitting transistor 有权
公开(公告)号：US09634291B2
公开(公告)日：2017-04-25
申请号：US14511457
申请日：2014-10-10
申请人： Samsung Display Co., Ltd.
发明人： Ki-Seo Kim , Sung-Kook Park , Seung-Chan Lee
IPC分类号： H01L51/52 , H01L51/05
CPC分类号： H01L51/5296 , H01L51/0562
摘要： An organic light-emitting transistor (OLET) is provided. The OLET includes: a substrate; at least one first electrode on the substrate; a first semiconductor layer having a first conductive type on the first electrode; a second semiconductor layer having a second conductive type on the first semiconductor layer; a gate electrode disposed on a side surface of the second semiconductor layer; a gate insulating layer disposed between the gate electrode and the second semiconductor layer; an organic emission layer on the second semiconductor layer.

8. 发明申请

US20170069689A1 HYBRID HIGH ELECTRON MOBILITY TRANSISTOR AND ACTIVE MATRIX STRUCTURE 审中-公开
标题翻译：混合高电子移动晶体管和主动矩阵结构
公开(公告)号：US20170069689A1
公开(公告)日：2017-03-09
申请号：US15356608
申请日：2016-11-20
申请人： International Business Machines Corporation
发明人： Ali Afzali-Ardakani , Bahman Hekmatshoartabari , Devendra K. Sadana , Davood Shahrjerdi
IPC分类号： H01L27/28 , H01L51/10 , H01L27/32 , H01L51/05
CPC分类号： H01L27/286 , H01L27/1214 , H01L27/1218 , H01L27/1225 , H01L27/1251 , H01L27/3244 , H01L27/3274 , H01L29/408 , H01L29/432 , H01L29/435 , H01L29/66431 , H01L29/778 , H01L29/7786 , H01L29/78603 , H01L29/78654 , H01L51/0508 , H01L51/0529 , H01L51/0541 , H01L51/0558 , H01L51/0562 , H01L51/0587 , H01L51/105 , H01L51/107 , H05B33/0896 , H05B37/0209
摘要： Hybrid high electron mobility field-effect transistors including inorganic channels and organic gate barrier layers are used in some applications for forming high resolution active matrix displays. Arrays of such high electron mobility field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes. The organic gate barrier layers are operative to suppress both electron and hole transport between the inorganic channel layer and the gate electrodes of the high electron mobility field-effect transistors.
摘要翻译：包括无机通道和有机栅极阻挡层的混合高电子迁移率场效应晶体管用于形成高分辨率有源矩阵显示器的一些应用中。这种高电子迁移率场效应晶体管的阵列电连接到薄膜开关晶体管，并为诸如有机发光二极管的无源器件提供高驱动电流。有机栅极阻挡层可操作以抑制无机沟道层与高电子迁移率场效应晶体管的栅电极之间的电子和空穴传输。

9. 发明申请

US20160372663A1 ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20160372663A1
公开(公告)日：2016-12-22
申请号：US15252937
申请日：2016-08-31
申请人： FUJIFILM Corporation
发明人： Hiroo TAKIZAWA , Teruki NIORI , Yasunori YONEKUTA , Hayato YOSHIDA
IPC分类号： H01L51/00
CPC分类号： H01L51/004 , C07F7/081 , C07F7/0812 , H01L51/0003 , H01L51/0043 , H01L51/0055 , H01L51/0071 , H01L51/0073 , H01L51/0074 , H01L51/0094 , H01L51/0516 , H01L51/0558 , H01L51/0562 , H01L51/0566
摘要： Provided are an organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, and a source electrode and a drain electrode on a substrate, in which the organic semiconductor layer contains an organic semiconductor and a block copolymer, and the block copolymer is at least one selected from specific block copolymers such as a styrene-(meth)acrylate ester block copolymer and may be phase-separated, and a method for manufacturing an organic thin-film transistor, which includes an organic semiconductor containing a phase-separated block copolymer, including: applying a coating solution which contains an organic semiconductor and a block copolymer for film formation; and heating the obtained film so that the block copolymer is self-assembled.
摘要翻译：提供一种有机薄膜晶体管，其包括：在基板上包括栅极，有机半导体层，栅极绝缘层以及源电极和漏电极，其中有机半导体层包含有机半导体和嵌段共聚物，嵌段共聚物为选自特定的嵌段共聚物如苯乙烯 - （甲基）丙烯酸酯嵌段共聚物中的至少一种，可以进行相分离，以及有机薄膜晶体管的制造方法，其包括有机半导体含有相分离的嵌段共聚物，包括：涂布含有有机半导体的涂料溶液和用于成膜的嵌段共聚物; 加热得到的膜，使嵌段共聚物自组装。

10. 发明授权

US09515273B2 Thin film transistor with a current-induced channel 有权
标题翻译：具有电流感应通道的薄膜晶体管
公开(公告)号：US09515273B2
公开(公告)日：2016-12-06
申请号：US14380726
申请日：2013-06-20
申请人： Indian Institute of Technology Kanpur
发明人： Baquer Mazhari , Ankita Gangwar
IPC分类号： H01L51/00 , H01L51/05
CPC分类号： H01L51/0562 , H01L51/0046 , H01L51/0054 , H01L51/0055 , H01L51/0058 , H01L51/0068 , H01L51/0072 , H01L51/0073 , H01L51/0081 , H01L51/0091 , H01L51/0545
摘要： A thin film transistor (TFT) includes a hole transport layer having a first side and a second side and an electron transport layer having a first side and a second side. The first side of the electron transport layer is directly interfaced to the second side of the hole transport layer. The electron transport layer includes a material having greater ionization potential and greater electron affinity than the hole transport layer, thereby forming a hole barrier and an electron barrier at the junction between the electron transport layer and the hole transport layer. A channel in the TFT is created by current injected into the electron transport layer from a gate electrode rather than by an electrostatic field generated by voltage applied to the gate electrode. The accumulated charge density in the channel of the TFT can be significantly larger than what can be generated through field effect principle, therefore a much lower gate voltage is needed than in a conventional TFT.
摘要翻译：薄膜晶体管（TFT）包括具有第一侧和第二侧的空穴传输层和具有第一侧和第二侧的电子传输层。电子传输层的第一面直接与空穴传输层的第二面相接。电子传输层包括具有比空穴传输层更大的电离电位和更大的电子亲和力的材料，从而在电子传输层和空穴传输层之间的接合处形成空穴阻挡层和电子势垒。 TFT中的沟道通过从栅电极注入到电子传输层中的电流产生，而不是由施加到栅电极的电压产生的静电场产生。 TFT的通道中的累积电荷密度可以明显大于通过场效应原理产生的电荷密度，因此与常规TFT相比需要低得多的栅极电压。

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