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11. 发明授权

US07923744B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07923744B2
公开(公告)日：2011-04-12
申请号：US12755019
申请日：2010-04-06
申请人： Tzong-Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
发明人： Tzong-Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
IPC分类号： H01L29/26
CPC分类号： H01L33/44 , H01L33/20 , H01L2933/0091
摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.
摘要翻译：本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块结构。第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。第一电极形成在第一区域上。在第二区域上形成发光层和第二导电型半导体材料层。凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。在每个凸块结构的侧壁中形成至少一个凹部。或者，每个凸块结构的侧壁具有弯曲的轮廓。

12. 发明申请

US20100230706A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100230706A1
公开(公告)日：2010-09-16
申请号：US12755019
申请日：2010-04-06
申请人： Tzong Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
发明人： Tzong Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
IPC分类号： H01L33/02
CPC分类号： H01L33/44 , H01L33/20 , H01L2933/0091
摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.
摘要翻译：本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块结构。第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。第一电极形成在第一区域上。在第二区域上形成发光层和第二导电型半导体材料层。凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。在每个凸块结构的侧壁中形成至少一个凹部。或者，每个凸块结构的侧壁具有弯曲的轮廓。

13. 发明申请

US20100123146A1 LIGHT-EMITTING DEVICE STRUCTURE AND SEMICONDUCTOR WAFER STRUCTURE WITH THE SAME 有权
标题翻译：发光装置结构与半导体波长结构
公开(公告)号：US20100123146A1
公开(公告)日：2010-05-20
申请号：US12421923
申请日：2009-04-10
申请人： SHU HUI LIN
发明人： SHU HUI LIN
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22
摘要： A light-emitting device structure comprises a substrate having a first region and a second region outside the first region, a first conductive type semiconductor layer positioned on the first region, a light-emitting structure positioned on the first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on the light-emitting structure, and a wall structure positioned on the second region.
摘要翻译：发光器件结构包括具有第一区域和第一区域外部的第二区域的衬底，位于第一区域上的第一导电类型半导体层，位于第一导电类型半导体层上的发光结构，第二导电类型半导体层位于所述发光结构上的导电型半导体层，以及位于所述第二区域上的壁结构。

14. 发明授权

US07659557B2 Semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07659557B2
公开(公告)日：2010-02-09
申请号：US11798873
申请日：2007-05-17
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L33/00
CPC分类号： H01L33/26 , H01L33/40
摘要： The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.
摘要翻译：本发明提供具有II-V族（或II-IV-V族）化合物接触层的半导体发光器件及其制造方法。根据本发明的优选实施例的半导体发光器件包括基板，第一导电型半导体材料层，发光层，第一电极，第二导电型半导体材料层，II-V族（或II-IV-V族）化合物接触层，透明导电层和第二电极。 II-V族（或II-IV-V族）化合物接触层的存在改善了第二导电类型半导体材料层和透明导电层之间的欧姆接触。

15. 发明申请

US20090057702A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20090057702A1
公开(公告)日：2009-03-05
申请号：US12128394
申请日：2008-05-28
申请人： Shu-Wei CHIU
发明人： Shu-Wei CHIU
IPC分类号： H01L33/00
CPC分类号： H01L33/46
摘要： The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, at least one electrode structure, and a light reflector. The substrate has an upper surface. The multi-layer structure is formed on the upper surface of the substrate. The multi-layer structure includes a light-emitting region and at least one semiconductor material layer. The multi-layer structure also has a top surface. The at least one electrode structure is formed on the top surface of the multi-layer structure. The light reflector is formed on the top surface of the multi-layer structure.
摘要翻译：本发明公开了一种半导体发光装置。根据本发明的半导体发光器件包括衬底，多层结构，至少一个电极结构和光反射器。基板具有上表面。多层结构形成在基板的上表面上。多层结构包括发光区域和至少一个半导体材料层。多层结构也具有顶面。至少一个电极结构形成在多层结构的顶表面上。光反射器形成在多层结构的顶表面上。

16. 发明申请

US20090045419A1 Semiconductor light-emitting device with high light-extraction efficiency and method for fabricating the same 有权
标题翻译：具有高光提取效率的半导体发光器件及其制造方法
公开(公告)号：US20090045419A1
公开(公告)日：2009-02-19
申请号：US12000064
申请日：2007-12-07
申请人： Tzong-Liang Tsai
发明人： Tzong-Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/02 , H01L33/22
摘要： The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic electrode structure. The substrate has a first upper surface and a plurality of recesses formed on the first upper surface. The first semiconductor material layer is formed on the first upper surface of the substrate and has a second upper surface. The multi-layer structure is formed on the second upper surface of the first semiconductor material layer and includes a light-emitting region. The ohmic electrode structure is formed on the multi-layer structure. In particular, the first semiconductor material layer has a refractive index different from those of the substrate and a bottom-most layer of the multi-layer structure.
摘要翻译：本发明公开了一种半导体发光器件及其制造方法。根据本发明的半导体发光器件包括衬底，第一半导体材料层，多层结构和欧姆电极结构。基板具有形成在第一上表面上的第一上表面和多个凹部。第一半导体材料层形成在基板的第一上表面上并具有第二上表面。多层结构形成在第一半导体材料层的第二上表面上并且包括发光区域。欧姆电极结构形成在多层结构上。特别地，第一半导体材料层的折射率与基板和多层结构的最底层的折射率不同。

17. 发明授权

US07408204B2 Flip-chip packaging structure for light emitting diode and method thereof 有权
标题翻译：用于发光二极管的倒装芯片封装结构及其方法
公开(公告)号：US07408204B2
公开(公告)日：2008-08-05
申请号：US11463273
申请日：2006-08-08
申请人： Ching-Wen Tung
发明人： Ching-Wen Tung
IPC分类号： H01L29/22 , H01L23/495
CPC分类号： H01L33/62 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/131 , H01L2224/16225 , H01L2224/16238 , H01L2224/29034 , H01L2224/29124 , H01L2224/29144 , H01L2224/32225 , H01L2224/32227 , H01L2224/32502 , H01L2224/32506 , H01L2224/48091 , H01L2224/49107 , H01L2224/73203 , H01L2224/73265 , H01L2224/81192 , H01L2224/81903 , H01L2224/83101 , H01L2224/83192 , H01L2224/83805 , H01L2224/9211 , H01L2924/00014 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/12041 , Y10T225/286 , Y10T225/29 , Y10T225/298 , Y10T225/30 , Y10T225/343 , H01L2924/01013 , H01L2924/00012 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A packaging structure and method for a light emitting diode is provided. The present invention uses flip-chip and eutectic bonding technology to attach a LED to a thermal and electrical conducting substrate. The flip-chip packaging structure comprises a thermal and electrical conducting substrate having an insulating layer formed in an appropriate area on the top surface of the substrate and a bonding pad formed on top of the insulating layer; and a LED reversed in a flip-chip style and joined to the substrate by eutectic bonding. A first electrode of the LED is eutectically bonded to an appropriate area on the top surface of the substrate via a eutectic layer, while a second electrode of the LED is electrically connected to the bonding pad.
摘要翻译：提供了一种用于发光二极管的封装结构和方法。本发明使用倒装芯片和共晶接合技术将LED连接到导热和导电基板。所述倒装芯片封装结构包括导热基板和导电基板，所述基板具有形成在所述基板顶表面上的适当区域中的绝缘层和形成在所述绝缘层顶部上的焊盘; 并且以倒装芯片形式反转的LED并且通过共晶接合连接到基板。 LED的第一电极通过共晶层共晶地结合到衬底的顶表面上的适当区域，而LED的第二电极电连接到焊盘。

18. 发明申请

US20080023709A1 Semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20080023709A1
公开(公告)日：2008-01-31
申请号：US11798873
申请日：2007-05-17
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/26 , H01L33/40
摘要： The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.
摘要翻译：本发明提供具有II-V族（或II-IV-V族）化合物接触层的半导体发光器件及其制造方法。根据本发明的优选实施例的半导体发光器件包括基板，第一导电型半导体材料层，发光层，第一电极，第二导电型半导体材料层，II-V族（或II-IV-V族）化合物接触层，透明导电层和第二电极。 II-V族（或II-IV-V族）化合物接触层的存在改善了第二导电类型半导体材料层和透明导电层之间的欧姆接触。

19. 发明授权

US09947839B2 LED assembly 有权
公开(公告)号：US09947839B2
公开(公告)日：2018-04-17
申请号：US15297554
申请日：2016-10-19
申请人： HUGA OPTOTECH INC. , Interlight Optotech Corporation
发明人： Tzer-Perng Chen , Tzu-Chi Cheng
IPC分类号： H01L33/62 , H01L33/50 , H01L33/48
CPC分类号： H01L33/504 , H01L33/486 , H01L33/507 , H01L33/62 , H01L2224/48137 , H01L2224/48464 , H01L2224/49109 , H01L2924/181 , H01L2924/00012
摘要： This disclosure discloses an LED assembly. The LED assembly includes a transparent mount with a top surface and a bottom surface opposite to the top surface, an LED chip arranged on the top surface, an electrode plate, a first phosphor layer having a first phosphor, and a second phosphor layer having a second phosphor, wherein the transparent mount and the electrode plate substantially have a same width. The electrode plate is arranged on an edge of the top surface and electrically connected to the LED chip.

20. 发明授权

US09306118B2 Method of treating substrate 有权
标题翻译：底物处理方法
公开(公告)号：US09306118B2
公开(公告)日：2016-04-05
申请号：US11976872
申请日：2007-10-29
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai
IPC分类号： H01L33/00 , H01L33/22 , H01L29/30 , H01L21/304
CPC分类号： H01L33/22 , H01L21/3043 , H01L29/30
摘要： A method of treating a substrate includes forming a plurality of nicks on an upper surface of the substrate by an electromagnetic wave without using a mask, wherein sidewalls of each nick have fusion formed thereon; roughening the sidewalls by removing the fusion; and forming an epitaxial multi-layer structure on the upper surface and the nicks. The roughened sidewalls of each nick comprise an average roughness equal to or larger than 1 nm.
摘要翻译：处理基板的方法包括：在不使用掩模的情况下通过电磁波在基板的上表面上形成多个切口，其中每个切口的侧壁在其上形成熔融; 通过去除融合来粗糙化侧壁; 并在上表面和刻痕上形成外延多层结构。每个切口的粗糙化的侧壁具有等于或大于1nm的平均粗糙度。

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