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11. 发明申请

US20090117714A1 Method of producing semiconductor device, and substrate processing apparatus 审中-公开
标题翻译：半导体装置的制造方法以及基板处理装置
公开(公告)号：US20090117714A1
公开(公告)日：2009-05-07
申请号：US12153043
申请日：2008-05-13
申请人： Naonori Akae , Yushin Takasawa
发明人： Naonori Akae , Yushin Takasawa
IPC分类号： H01L21/365
CPC分类号： H01L29/42332 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/67167 , H01L21/6719 , H01L29/40114 , H01L29/7881
摘要： Disclosed is a method of producing a semiconductor device, comprising the steps of carrying a substrate with an insulating film formed on its surface into a processing chamber; processing the substrate to form silicon grains on the insulating film formed on the surface of the substrate by introducing at least a silicon-base gas into the processing chamber; and carrying the processed substrate out of the processing chamber, wherein in the processing step, a silicon-base gas and a dopant gas are introduced into the processing chamber with the temperature and the pressure inside the processing chamber being so controlled that, when the silicon-base gas is introduced singly, the silicon-base gas is not thermally decomposed under the controlled condition, in such a manner that the flow rate of the dopant gas could be equal to or more than the flow rate of the silicon-base gas.
摘要翻译：公开了一种制造半导体器件的方法，包括以下步骤：将其表面上形成有绝缘膜的衬底运送到处理室中; 通过至少将硅基气体引入到处理室中，处理衬底以在形成在衬底表面上的绝缘膜上形成硅晶粒; 并将处理后的基板搬出处理室，其中在处理步骤中，硅基气体和掺杂剂气体被引入处理室中，处理室内的温度和压力被控制，使得当硅碱性气体被单独引入，硅基气体在受控状态下不会被热分解，使得掺杂剂气体的流量可以等于或大于硅基气体的流量。

12. 发明申请

US20080210285A1 Thermoelectric Conversion Material And Production Method For Thermoelectric Conversion Material 有权
标题翻译：热电转换材料及热电转换材料的制造方法
公开(公告)号：US20080210285A1
公开(公告)日：2008-09-04
申请号：US11667753
申请日：2005-11-15
申请人： Hideo Hosono , Masahiro Hirano , Hiromichi Ohta , Kunihito Koumoto
发明人： Hideo Hosono , Masahiro Hirano , Hiromichi Ohta , Kunihito Koumoto
IPC分类号： H01L35/02 , H01L35/34 , H01L21/365
CPC分类号： H01L35/22 , H01L35/34
摘要： A thermoelectric conversion material having a novel composition is provided. The thermoelectric conversion material comprises a first dielectric material layer, a second dielectric material layer, and an electron localization layer that is present between the first dielectric material layer and the second dielectric material layer and that has a thickness of 1 nm.
摘要翻译：提供具有新型组成的热电转换材料。热电转换材料包括第一电介质材料层，第二电介质材料层和存在于第一电介质材料层和第二电介质材料层之间且厚度为1nm的电子定位层。

13. 发明申请

US20050287817A1 Low dielectric constant zinc oxide 失效
标题翻译：低介电常数氧化锌
公开(公告)号：US20050287817A1
公开(公告)日：2005-12-29
申请号：US11156264
申请日：2005-06-17
申请人： Robert Burgener , Roger Felix , Gary Renlund
发明人： Robert Burgener , Roger Felix , Gary Renlund
IPC分类号： C01G9/02 , H01L21/00 , H01L21/28 , H01L21/31 , H01L21/3115 , H01L21/316 , H01L21/363 , H01L21/365 , H01L21/469 , H01L23/58 , H01L27/15 , H01L29/225 , H01L29/26 , H01L31/0296 , H01L31/0328 , H01L31/12 , H01L33/28 , H01S5/30 , H01S5/327 , H01S5/347
CPC分类号： H01L21/02551 , B82Y20/00 , C01G9/02 , C01P2006/40 , C30B25/02 , C30B29/16 , C30B29/48 , H01L21/02554 , H01L21/02565 , H01L21/02568 , H01L21/02579 , H01L21/3115 , H01L21/316 , H01L23/5329 , H01L29/225 , H01L31/02963 , H01L33/025 , H01L33/28 , H01L33/285 , H01L2924/0002 , H01S5/305 , H01S5/3054 , H01S5/327 , H01S5/347 , H01L2924/00
摘要： Low dielectric constant group II-VI compounds, such as zinc oxide, and fabrication methods are disclosed. Low dielectric constant insulator materials are fabricated by doping zinc oxide with at least one mole % p-type dopant ion. Low dielectric constant zinc oxide insulator materials are fabricated by doping zinc oxide with silicon having a concentration of at least 1017 atoms/cm3. Low dielectric zinc oxide insulator materials are fabricated by doping zinc oxide with a dopant ion having a concentration of at least about 1018 atoms/cm3, followed by heating to a temperature which converts the zinc oxide to an insulator. The temperature varies depending upon the choice of dopant. For arsenic, the temperature is at least about 450° C.; for antimony, the temperature is at least about 650° C. The dielectric constant of zinc oxide semiconductor is lowered by doping zinc oxide with a dopant ion at a concentration at least about 1018 to about 1019 atoms/cm3.
摘要翻译：公开了诸如氧化锌的低介电常数组II-VI化合物和制造方法。低介电常数绝缘体材料通过用至少一摩尔％p型掺杂剂离子掺杂氧化锌来制造。低介电常数氧化锌绝缘体材料是通过用浓度至少为10 17原子/ cm 3的硅掺杂氧化锌来制造的。低介电氧化锌绝缘体材料通过掺杂浓度为至少约10 18原子/ cm 3的掺杂剂离子氧化锌制造，然后加热至温度其将氧化锌转化为绝缘体。温度根据掺杂剂的选择而变化。对于砷，温度至少为450°C。对于锑，温度为至少约650℃。氧化锌半导体的介电常数通过掺杂浓度为至少约10至约10的掺杂剂离子氧化锌而降低 > 19原子/ cm 3。

14. 发明授权

US6045626A Substrate structures for electronic devices 失效
标题翻译：电子设备基板结构
公开(公告)号：US6045626A
公开(公告)日：2000-04-04
申请号：US102568
申请日：1998-06-23
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L21/365 , H01L33/12 , H01L33/16 , H01L33/32 , H01L33/34 , H01L39/24
CPC分类号： H01L33/007 , H01L41/0815 , H01L41/316 , H01L41/319 , H01L39/2461
摘要： A substrate structure includes a single crystal Si substrate and a surface layer, with a buffer layer interleaved therebetween. The buffer layer includes at least one of an R--Zr family oxide thin film composed mainly of a rare earth oxide and/or zirconium oxide, an AMnO.sub.3 thin film composed mainly of rare earth element A, Mn and O and having a hexagonal YMnO.sub.3 type structure, an AlO.sub.x thin film composed mainly of Al and O, and a NaCl type nitride thin film composed mainly of titanium nitride, niobium nitride, tantalum nitride or zirconium nitride. The surface layer is an epitaxial film containing a wurtzite type oxide and/or nitride. The surface layer can serve as a functional film such as a semiconductor film or an underlying film therefor, and the substrate structure is useful for the manufacture of electronic devices.
摘要翻译：衬底结构包括单晶Si衬底和表面层，其间具有交错的缓冲层。缓冲层包括主要由稀土氧化物和/或氧化锆组成的R-Zr族氧化物薄膜中的至少一种，主要由稀土元素A，Mn和O组成的具有六方晶YMnO 3型的AMnO 3薄膜主要由Al和O组成的AlOx薄膜和主要由氮化钛，氮化铌，氮化钽或氮化锆组成的NaCl型氮化物薄膜。表面层是含有纤锌矿型氧化物和/或氮化物的外延膜。表面层可以用作诸如半导体膜或其下面的膜的功能膜，并且衬底结构对于电子器件的制造是有用的。

15. 发明授权

US06020253A Use of tertiarybutylbis-(dimethylamino)phosphine in forming semiconductor material by chemical vapor deposition 失效
标题翻译：叔丁基双（二甲基氨基）膦在化学气相沉积法中的应用
公开(公告)号：US06020253A
公开(公告)日：2000-02-01
申请号：US267911
申请日：1999-03-05
申请人： Robert W. Gedridge, Jr. , Thomas J. Groshens , Kelvin T. Higa
发明人： Robert W. Gedridge, Jr. , Thomas J. Groshens , Kelvin T. Higa
IPC分类号： C23C16/30 , C30B25/02 , H01L21/205 , H01L21/316 , H01L21/365 , H01L21/20
CPC分类号： C30B25/02 , C23C16/301 , C30B29/38 , C30B29/40 , H01L21/02524 , H01L21/02543 , H01L21/02551 , H01L21/02576 , H01L21/0262 , H01L21/31625
摘要： A new compound, tertiarybutylbis-(dimethylamino)phosphine, ((CH.sub.3).sub.3 C)((CH.sub.3).sub.2 N).sub.2 P, is used as a precursor in forming phosphorus-containing semiconductor material by chemical vapor deposition. Tertiarybutylbis-(dimethylamino)phosphine is prepared by reacting a phosphorus trihalide, PX.sub.3, with the tertiarybutyl Grignard reagent ((CH.sub.3).sub.3 C)MgX. The resultant product is treated with lithium dimethylamide reagent LiN(CH.sub.3).sub.2. Tertiarybutylbis-(dimethylamino)phosphine is then recovered from the reaction mixture. Phosphorus-containing semiconductor materials are formed by chemical vapor deposition by means of bubbling a carrier gas through the new compound and then transporting the ((CH.sub.3).sub.3 C)((CH.sub.3).sub.2 N).sub.2 P with the carrier gas to a heated substrate. Additional elements from groups II, III, V, and VI of the periodic table are then deposited on the substrate to form the Phosphorus-containing semiconductor materials.
摘要翻译：使用新的化合物叔丁基二（二甲基氨基）膦，（（CH3）3C）（（CH3）2N）2P作为通过化学气相沉积形成含磷半导体材料的前体。通过三氯化磷PX3与叔丁基格氏试剂（（CH3）3C）MgX反应制备叔丁基双（二甲基氨基）膦。所得产物用二甲基酰胺试剂LiN（CH 3）2处理。然后从反应混合物中回收叔丁基双（二甲氨基）膦。含磷的半导体材料通过化学气相沉积形成，通过使载气鼓泡通过新化合物，然后将（（CH 3）3 C）（（CH 3）2 N）2 P与载气输送到加热的基底。然后将周期表第II，III，V和VI族的附加元素沉积在衬底上以形成含磷的半导体材料。

16. 发明授权

US5766345A Epitaxial growth method of semiconductor 失效
标题翻译：半导体的外延生长方法
公开(公告)号：US5766345A
公开(公告)日：1998-06-16
申请号：US543283
申请日：1995-10-16
申请人： Shigetaka Tomiya , Kazushi Nakano , Satoshi Ito , Rikako Minatoya
发明人： Shigetaka Tomiya , Kazushi Nakano , Satoshi Ito , Rikako Minatoya
IPC分类号： C30B25/14 , C30B23/02 , H01L21/203 , H01L21/363 , H01L21/365 , H01S5/00 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/327
CPC分类号： H01L33/28 , C30B23/02 , C30B29/48 , H01L21/02395 , H01L21/02439 , H01L21/02505 , H01L21/02557 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L33/0087 , H01S5/327 , H01S2304/04 , H01S5/0421 , H01S5/2213 , H01S5/2231
摘要： An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method of manufacturing a semiconductor light-emitting device, it is possible to obtain a semiconductor light-emitting device having a long life and excellent light-emitting characteristic. When a II-VI compound semiconductor is grown epitaxially, a VI/II ratio, i.e., a supplying ratio of VI-group element and II-group element used in the epitaxial growth is selected in a range of from 1.3 to 2.5.
摘要翻译：当外延生长II-VI化合物半导体时，半导体的外延生长方法可以可靠地避免产生不规则性。当将该方法应用于制造半导体发光器件的方法时，可以获得具有长寿命和优异的发光特性的半导体发光器件。当外延生长II-VI化合物半导体时，在外延生长中使用的VI / II比例，即VI族元素和II族元素的供给比选择为1.3〜2.5。

17. 发明授权

US5589110A Container for liquid metal organic compound 失效
标题翻译：液态金属有机化合物容器
公开(公告)号：US5589110A
公开(公告)日：1996-12-31
申请号：US533462
申请日：1995-09-25
申请人： Takashi Motoda , Shoichi Karakida , Nobuaki Kaneno , Shigeki Kageyama
发明人： Takashi Motoda , Shoichi Karakida , Nobuaki Kaneno , Shigeki Kageyama
IPC分类号： C30B35/00 , C23C16/448 , C30B25/14 , H01L21/205 , H01L21/365 , B01F3/04
CPC分类号： C23C16/45561 , C23C16/4481 , C23C16/4482 , C23C16/4485 , C30B25/14 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0262
摘要： A metal organic compound container apparatus for containing a liquid metal organic compound, receiving a carrier gas, and producing a carrier gas stream saturated with vapor of the metal organic compound including a container for containing a liquid metal organic compound; an inlet pipe for introducing a carrier gas into the container, the inlet pipe having an end for immersion in the metal organic compound; a carrier gas flow rate controller for controlling carrier gas flow into the inlet pipe; a first exhaust pipe for exhausting carrier gas from the container at a first flow rate, the first exhaust pipe having an end not contacting the metal organic compound; a first gas flow rate controller for controlling one of pressure and the first flow rate of the carrier gas through the first exhaust pipe; a second exhaust pipe for exhausting carrier gas from the container at a second flow rate, the second exhaust pipe having an end not contacting the metal organic compound; and a second gas flow rate controller for controlling the second flow rate.
摘要翻译：一种金属有机化合物容器装置，用于容纳液体金属有机化合物，接收载气，并制备包含含有液态金属有机化合物的容器的金属有机化合物饱和的载气流; 用于将载气引入容器的入口管，所述入口管具有用于浸入所述金属有机化合物的端部; 用于控制载气流入入口管的载气流量控制器; 第一排气管，其以第一流量从所述容器排出载气，所述第一排气管的端部不接触所述金属有机化合物; 第一气体流量控制器，用于控制通过第一排气管的载气的压力和第一流量之一; 第二排气管，用于以第二流量从所述容器排出载气，所述第二排气管具有不接触所述金属有机化合物的端部; 以及用于控制第二流量的第二气体流量控制器。

18. 发明授权

US5399503A Method for growing a HgCdTe epitaxial layer on a semiconductor substrate 失效
标题翻译：在半导体衬底上生长HgCdTe外延层的方法
公开(公告)号：US5399503A
公开(公告)日：1995-03-21
申请号：US7829
申请日：1993-01-22
申请人： Tetsuo Saito , Tetsuya Kochi , Tamotsu Yamamoto , Kazuo Ozaki , Kosaku Yamamoto
发明人： Tetsuo Saito , Tetsuya Kochi , Tamotsu Yamamoto , Kazuo Ozaki , Kosaku Yamamoto
IPC分类号： H01L21/205 , C30B23/02 , H01L21/363 , H01L21/365 , H01L21/86 , H01L31/18
CPC分类号： H01L31/1832 , C30B23/02 , C30B29/48 , H01L21/0242 , H01L21/0256 , H01L21/02562 , H01L21/02614 , H01L21/02631 , Y10S148/064 , Y10S438/971
摘要： A method for growing an epitaxial layer of a group II-VI tenary or quaternary compound on a substrate. In particular a HgCdTe semiconductor layer is grown on a substrate such as sapphire which does not interdiffuse with the materials in the semiconductor layer. Initially a crystalline CdTe semiconductor layer is formed on the substrate and then the substrate with the CdTe layer thereon is placed into an enclosure along with a Hg-Cd-Te source that is rich in Te. The substrate and the source are then heated so as to establish three-phase equilibrium conditions in the enclosure whereby vapors from the source are transported to the CdTe layer and the latter is converted into a ternary semiconductor compound having the composition Hg.sub.1-x Cd.sub.x Te. The substrate with the Hg.sub.1-x Cd.sub.x Te epitaxial layer thereon is useful as a sensing device.
摘要翻译：一种用于在衬底上生长II-VI族基团或四元化合物的外延层的方法。特别地，HgCdTe半导体层生长在诸如不与半导体层中的材料相互扩散的蓝宝石的衬底上。最初在衬底上形成晶体CdTe半导体层，然后将其上具有CdTe层的衬底与富含Te的Hg-Cd-Te源一起放置在封装中。然后加热衬底和源，以便在外壳中建立三相平衡条件，由此将来自源的蒸汽输送到CdTe层，并且将其转化为具有组成为Hg1-xCdxTe的三元半导体化合物。其上具有Hg1-xCdxTe外延层的衬底可用作感测装置。

19. 发明授权

US5354708A Method of nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine 失效
标题翻译：使用胺进行外延生长期间II-VI半导体化合物的氮掺杂方法
公开(公告)号：US5354708A
公开(公告)日：1994-10-11
申请号：US091634
申请日：1993-07-14
申请人： Nikhil R. Taskar , Babar A. Khan , Donald R. Dorman
发明人： Nikhil R. Taskar , Babar A. Khan , Donald R. Dorman
IPC分类号： C30B29/48 , C23C16/18 , C30B25/02 , C30B25/10 , H01L21/205 , H01L21/365 , H01L21/20
CPC分类号： H01L21/02395 , C30B25/02 , C30B25/105 , C30B29/48 , H01L21/0256 , H01L21/02579 , H01L21/0262 , Y10S148/041 , Y10S148/064
摘要： The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is at least above the bandgap energy of the compound at the growth temperature.
摘要翻译：通过使用叔丁胺作为掺杂剂载体，II-VI半导体化合物的生长外延层中的N受体的浓度增强，并且通过使用光辅助生长进一步增强，其使用波长为至少高于化合物在生长温度下的带隙能量。

20. 发明授权

US5302232A (111) Group II-VI epitaxial layer grown on (111) silicon substrate 失效
标题翻译：（111）在（111）硅衬底上生长的II-VI族外延层
公开(公告)号：US5302232A
公开(公告)日：1994-04-12
申请号：US987683
申请日：1992-12-09
申请人： Hiroji Ebe , Akira Sawada
发明人： Hiroji Ebe , Akira Sawada
IPC分类号： H01L21/20 , C30B25/02 , H01L21/205 , H01L21/36 , H01L21/365 , H01L31/0264
CPC分类号： H01L21/02562 , C30B25/02 , C30B29/48 , H01L21/02381 , H01L21/02395 , H01L21/02433 , H01L21/02609 , H01L21/0262 , Y10S438/973
摘要： A group II-VI epitaxial layer grown on a (111) silicon substrate has a lattice mismatch which is minimized, as between the group II-VI epitaxial layer and the silicon substrate. The grown group II-VI epitaxial layer also has a (111) plane at the interface with the substrate, and a 30.degree. in-plane rotation slip is formed at the interface between the (111) silicon substrate and the group II-VI epitaxial layer. The above structure is produced by a metal organic chemical vapor deposition method (MOCVD), in which a mol ratio of a group VI gas source supply to a group II gas source supply is kept greater than 15 during the growth. The (111) silicon substrate is preferably mis-oriented toward the direction of the silicon substrate. When a HgCdTe layer is grown on the epitaxial layer, the product thus formed has utility as a monolithic infrared detector in which a plurality of detector elements are formed in the HgCdTe layer and a signal processing circuit is formed in the silicon substrate.
摘要翻译：在（111）硅衬底上生长的II-VI族外延层具有如II-VI族外延层和硅衬底之间的最小化的晶格失配。生长的组II-VI外延层在与衬底的界面处还具有（111）面，并且在（111）硅衬底和II-VI族外延层之间的界面处形成30度的面内旋转滑移层。上述结构是通过金属有机化学气相沉积法（MOCVD）制备的，其中VI族气源源与II族气体源的摩尔比在生长过程中保持大于15。（111）硅衬底优选地朝向硅衬底的<110>方向错误取向。当在外延层上生长HgCdTe层时，由此形成的产品可用作单片红外检测器，其中在HgCdTe层中形成多个检测器元件，并且在硅衬底中形成信号处理电路。

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