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21. 发明申请

US20150060265A1 DUAL DISCHARGE MODES OPERATION FOR REMOTE PLASMA 有权
标题翻译：双排放模式远程等离子体操作
公开(公告)号：US20150060265A1
公开(公告)日：2015-03-05
申请号：US14468066
申请日：2014-08-25
申请人： Applied Materials, Inc.
发明人： Tae Seung Cho , Yi-Heng Sen , Soonam Park , Dmitry Lubomirsky
IPC分类号： H01J37/32
CPC分类号： H01J37/32596 , H01J37/32018 , H01J37/32357 , H01J37/32449 , H01J37/32541 , H01J37/32568
摘要： Embodiments of the present technology may include a method of processing a semiconductor substrate. The method may include providing the semiconductor substrate in a processing region. Additionally, the method may include flowing gas through a cavity defined by a powered electrode. The method may further include applying a negative voltage to the powered electrode. Also, the method may include striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas. The hollow cathode discharge effluents may then be flowed to the processing region through a plurality of apertures defined by electrically grounded electrode. The method may then include reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region.
摘要翻译：本技术的实施例可以包括处理半导体衬底的方法。该方法可以包括在处理区域中提供半导体衬底。另外，该方法可以包括使气体流过由动力电极限定的空腔。该方法可以进一步包括向被动电极施加负电压。此外，该方法可以包括在空腔中冲击空心阴极放电以从气体形成空心阴极排出流出物。然后可以通过由电接地电极限定的多个孔将空心阴极排出流出物流动到处理区域。该方法可以包括使空心阴极排出流体与处理区域中的半导体衬底反应。

22. 发明授权

US08969212B2 Dry-etch selectivity 有权
标题翻译：干蚀刻选择性
公开(公告)号：US08969212B2
公开(公告)日：2015-03-03
申请号：US13834206
申请日：2013-03-15
申请人： Applied Materials, Inc.
发明人： He Ren , Jang-Gyoo Yang , Jonghoon Baek , Anchuan Wang , Soonam Park , Saurabh Garg , Xinglong Chen , Nitin K. Ingle
IPC分类号： H01L21/302 , H01L21/311 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32357
摘要： A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.
摘要翻译：描述了蚀刻暴露的图案化异质结构的方法，并且包括由反应性前体形成的远程等离子体蚀刻。等离子体功率是脉冲的，而不是连续地保持。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物选择性地比另一种更快地去除一种材料。蚀刻选择性是由等离子体功率脉冲到远程等离子体区域而产生的，这已经被发现抑制了到达衬底的离子充电物质的数量。蚀刻选择性也可能由位于远程等离子体的一部分与基板处理区域之间的离子抑制元件的存在引起。

23. 发明授权

US11591693B2 Ceramic showerheads with conductive electrodes 有权
公开(公告)号：US11591693B2
公开(公告)日：2023-02-28
申请号：US17176411
申请日：2021-02-16
申请人： Applied Materials, Inc.
发明人： Laksheswar Kalita , Soonam Park , Dmitry Lubomirsky , Tien Fak Tan , LokKee Loh , Saravjeet Singh , Tae Won Kim
IPC分类号： H01J37/32 , C23C16/455 , C23C16/34 , H01L21/3213 , H01L21/285 , C23C16/458
摘要： Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

24. 发明授权

US11276590B2 Multi-zone semiconductor substrate supports 有权
公开(公告)号：US11276590B2
公开(公告)日：2022-03-15
申请号：US15597949
申请日：2017-05-17
申请人： Applied Materials, Inc.
发明人： Mehmet Tugrul Samir , Dongqing Yang , Dmitry Lubomirsky , Peter Hillman , Soonam Park , Martin Yue Choy , Lala Zhu
IPC分类号： H01L21/67 , H01L21/687 , H01J37/32
摘要： Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

25. 发明授权

US10593523B2 Systems and methods for internal surface conditioning in plasma processing equipment 有权
公开(公告)号：US10593523B2
公开(公告)日：2020-03-17
申请号：US15139243
申请日：2016-04-26
申请人： Applied Materials, Inc.
发明人： Soonam Park , Yufei Zhu , Edwin C. Suarez , Nitin K. Ingle , Dmitry Lubomirsky , Jiayin Huang
IPC分类号： H01J37/32 , H01L21/66 , H01L21/311 , H01L21/3213 , H01L21/67 , C23C16/455 , C23C16/50 , C23C16/505 , C23C16/52
摘要： A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

26. 发明授权

US10541184B2 Optical emission spectroscopic techniques for monitoring etching 有权
公开(公告)号：US10541184B2
公开(公告)日：2020-01-21
申请号：US15646845
申请日：2017-07-11
申请人： Applied Materials, Inc.
发明人： Soonwook Jung , Soonam Park , Dmitry Lubomirsky
IPC分类号： H01L21/3065 , H01L21/66 , H01L21/67 , G01N21/31 , G01N21/67
摘要： Embodiments may include a method of etching. The method may also include flowing a gas mixture through a plasma discharge to form plasma effluents. The method may further include flowing the plasma effluents through a plurality of apertures to a layer on a substrate. The layer may have a first thickness. In addition, the method may include etching the layer with the plasma effluents. The method may also include measuring the intensity of emission from a reaction of plasma effluents with the layer. The method may further include summing the intensity of the emission while the plasma effluents are being flowed to the layer to obtain an integrated intensity. The method may then include comparing the integrated intensity to a reference value corresponding to a target etch thickness. The method may include extinguishing the plasma discharge when the integrated intensity is equal to or greater than the reference value.

27. 发明授权

US10468285B2 High temperature chuck for plasma processing systems 有权
公开(公告)号：US10468285B2
公开(公告)日：2019-11-05
申请号：US15642977
申请日：2017-07-06
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Sultan Malik , Dmitry Lubomirsky , Shambhu N. Roy , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Shankar Venkataraman
IPC分类号： H01L21/683 , H01L21/3065 , H01L21/67
摘要： A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

28. 发明授权

US10453655B2 Plasma reactor having digital control over rotation frequency of a microwave field with direct up-conversion 有权
公开(公告)号：US10453655B2
公开(公告)日：2019-10-22
申请号：US16213978
申请日：2018-12-07
申请人： Applied Materials, Inc.
发明人： Satoru Kobayashi , Hideo Sugai , Soonam Park , Kartik Ramaswamy , Dmitry Lubomirsky
IPC分类号： H01J37/32
摘要： A plasma reactor for processing a workpiece has a microwave source with a digitally synthesized rotation frequency using direct digital up-conversion and a user interface for controlling the rotation frequency.

29. 发明申请

US20190311883A1 SEMICONDUCTOR PROCESSING CHAMBER FOR MULTIPLE PRECURSOR FLOW 审中-公开
公开(公告)号：US20190311883A1
公开(公告)日：2019-10-10
申请号：US16448305
申请日：2019-06-21
申请人： Applied Materials, Inc.
发明人： Mehmet Tugrul Samir , Dongqing Yang , Dmitry Lubomirsky , Peter Hillman , Soonam Park , Martin Yue Choy , Lala Zhu
IPC分类号： H01J37/32
摘要： Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

30. 发明申请

US20190304756A1 SEMICONDUCTOR CHAMBER COATINGS AND PROCESSES 审中-公开
公开(公告)号：US20190304756A1
公开(公告)日：2019-10-03
申请号：US16374420
申请日：2019-04-03
申请人： Applied Materials, Inc.
发明人： Laksheswar Kalita , Soonam Park , Toan Q. Tran , Lili Ji , Dmitry Lubomirsky , Akhil Devarakonda , Tien Fak Tan , Tae Won Kim , Saravjeet Singh , Alexander Tam , Jingchun Zhang , Jing J. Zhang
IPC分类号： H01J37/32 , C23C4/134 , C23C4/11
摘要： Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum, stainless steel, or nickel plate defining a plurality of apertures. The plate may include a hybrid coating, and the hybrid coating may include a first layer comprising a corrosion resistant coating. The first layer may extend conformally through each aperture of the plurality of apertures. The hybrid coating may also include a second layer comprising an erosion resistant coating extending across a plasma-facing surface of the semiconductor chamber component.

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