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21. 发明申请

US20210025993A1 TRI-GATE CHARGE TRANSFER BLOCK STRUCTURE IN TIME OF FLIGHT PIXEL 有权
公开(公告)号：US20210025993A1
公开(公告)日：2021-01-28
申请号：US16522493
申请日：2019-07-25
申请人： OmniVision Technologies, Inc.
发明人： Woon Il Choi , Sohei Manabe
IPC分类号： G01S7/486 , G01S17/89 , H01L27/148 , H01L27/146
摘要： A pixel circuit includes a photodiode in semiconductor material to accumulate image charge in response to incident light. A tri-gate charge transfer block coupled includes a single shared channel region the semiconductor material. A transfer gate, shutter gate, and switch gate are disposed proximate to the single shared channel region. The transfer gate transfers image charge accumulated in the photodiode to the single shared channel region in response to a transfer signal. The shutter gate transfers the image charge in the single shared channel region to a floating diffusion in the semiconductor material in response to a shutter signal. The switch gate is configured to couple the single shared channel region to a charge storage structure in the semiconductor material in response to a switch signal.

22. 发明授权

US10741593B1 Vertical transfer gate storage for a global shutter in an image sensor 有权
公开(公告)号：US10741593B1
公开(公告)日：2020-08-11
申请号：US16422646
申请日：2019-05-24
申请人： OmniVision Technologies, Inc.
发明人： Keiji Mabuchi , Sohei Manabe
IPC分类号： H01L27/146 , H04N5/359 , H04N5/378
摘要： A pixel cell includes a photodiode disposed in a semiconductor material layer to accumulate image charge photogenerated in the photodiode in response to incident light. A storage transistor is coupled to the photodiode to store the image charge photogenerated in the photodiode. The storage transistor includes a storage gate disposed proximate a first surface of the semiconductor material layer. The storage gate includes a pair of vertical transfer gate (VTG) portions. Each one of the pair of VTG portions extends a first distance into the semiconductor material layer through the first surface of the semiconductor material layer. A storage node is disposed below the first surface of the semiconductor material layer and between the pair of VTG portions of the storage gate to store the image charge transferred from the photodiode in response to a storage signal.

23. 发明授权

US10283558B1 Floating diffusion of image sensor with low leakage current 有权
公开(公告)号：US10283558B1
公开(公告)日：2019-05-07
申请号：US15972380
申请日：2018-05-07
申请人： OmniVision Technologies, Inc.
发明人： Sohei Manabe , Keiji Mabuchi
IPC分类号： H01L27/146 , H04N5/359 , H04N5/378
摘要： An image sensor including a photodiode, a floating diffusion region, a first, second, and third doped region of a semiconductor material, and a first capacitor is presented. The photodiode is disposed in the semiconductor material to generate image charge in response to incident light. The floating diffusion region is disposed in the semiconductor material proximate to the photodiode. The floating diffusion region is at least partially surrounded by the first doped region of the semiconductor material. The second doped region and the third doped region of the semiconductor material each have an opposite polarity of the floating diffusion region and the first doped region. The floating diffusion region and at least part of the first doped region are laterally disposed between the second doped region and the third doped region.

24. 发明申请

US20180124372A1 Systems And Methods For Active Depth Imager With Background Subtract 审中-公开
公开(公告)号：US20180124372A1
公开(公告)日：2018-05-03
申请号：US15341374
申请日：2016-11-02
申请人： OmniVision Technologies, Inc.
发明人： Zheng Yang , Eiichi Funatsu , Sohei Manabe , Keiji Mabuchi , Dajiang Yang , Duli Mao , Bowei Zhang
IPC分类号： H04N13/00 , H04N13/02 , G06T7/00 , H04N5/353 , H04N5/378 , G06T5/00 , G06T5/50 , H01L27/146
CPC分类号： H04N13/106 , G01B11/24 , G06T5/001 , G06T5/50 , G06T7/586 , G06T7/593 , G06T2207/10028 , G06T2207/10144 , G06T2207/10152 , G06T2207/20224 , H01L27/146 , H01L27/14614 , H01L27/14643 , H04N5/3535 , H04N5/37452 , H04N5/378 , H04N13/254 , H04N13/271 , H04N2013/0092
摘要： An active depth imaging system and method of operating the same captures illuminator-on and illuminator-off image data with each of a first and second imager. The illuminator-on image data includes information representing an imaged scene and light emitted from an illuminator and reflected off of objects within the imaged scene. The illuminator-off image data includes information representing the imaged scene without the light emitted from the illuminator. For each image set captured by the first and second imagers, illuminator-off image data is subtracted from the illuminator-on image data to identify the illuminated light within the scene. The depth of an object at which the light is incident on then is determined by the subtracted image data of the first and second imagers.

25. 发明授权

US09936153B1 CMOS image sensor with dual floating diffusions per pixel for flicker-free detection of light emitting diodes 有权
公开(公告)号：US09936153B1
公开(公告)日：2018-04-03
申请号：US15285352
申请日：2016-10-04
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Duli Mao , Trygve Willassen , Johannes Solhusvik , Keiji Mabuchi , Gang Chen , Sohei Manabe , Dyson H. Tai , Bill Phan , Oray Orkun Cellek , Zhiqiang Lin
IPC分类号： H04N5/361 , H04N5/374 , H04N5/378 , H01L27/146
CPC分类号： H04N5/361 , H01L27/14636 , H01L27/14656 , H04N5/374 , H04N5/378
摘要： Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.

26. 发明申请

US20160037111A1 NEGATIVE BIASED SUBSTRATE FOR PIXELS IN STACKED IMAGE SENSORS 有权
标题翻译：堆叠式图像传感器中的像素的负偏移基板
公开(公告)号：US20160037111A1
公开(公告)日：2016-02-04
申请号：US14448154
申请日：2014-07-31
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Tiejun Dai , Rui Wang , Dyson H. Tai , Sohei Manabe
IPC分类号： H04N5/378 , H01L27/146 , H04N5/376
CPC分类号： H04N5/378 , H01L27/14612 , H01L27/14634 , H01L27/14636 , H04N5/376
摘要： A pixel cell includes a photodiode disposed within a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. A transfer transistor is disposed within the first semiconductor chip and coupled to the photodiode to transfer the image charge from the photodiode. A bias voltage generation circuit disposed within a second semiconductor chip for generating a bias voltage. The bias voltage generation circuit is coupled to the first semiconductor chip to bias the photodiode with the bias voltage. The bias voltage is negative with respect to a ground voltage of the second semiconductor chip. A floating diffusion is disposed within the second semiconductor chip. The transfer transistor is coupled to transfer the image charge from the photodiode on the first semiconductor chip to the floating diffusion on the second semiconductor chip.
摘要翻译：像素单元包括设置在第一半导体芯片内的光电二极管，用于响应入射在光电二极管上的光累积图像电荷。传输晶体管设置在第一半导体芯片内并耦合到光电二极管以从光电二极管传输图像电荷。偏置电压产生电路，设置在第二半导体芯片内，用于产生偏置电压。偏置电压产生电路耦合到第一半导体芯片以偏置偏压的光电二极管。偏置电压相对于第二半导体芯片的接地电压为负。浮置扩散部设置在第二半导体芯片内。传输晶体管被耦合以将图像电荷从第一半导体芯片上的光电二极管转移到第二半导体芯片上的浮动扩散。

27. 发明申请

US20150179695A1 IMAGE SENSOR PIXEL FOR HIGH DYNAMIC RANGE IMAGE SENSOR 有权
标题翻译：高动态范围图像传感器的图像传感器像素
公开(公告)号：US20150179695A1
公开(公告)日：2015-06-25
申请号：US14135066
申请日：2013-12-19
申请人： OmniVision Technologies, Inc.
发明人： Jeong-Ho Lyu , Sohei Manabe
IPC分类号： H01L27/146
CPC分类号： H01L27/14605 , H01L27/14607 , H01L27/1461 , H01L27/14612 , H01L27/14627 , H01L27/14641 , H01L27/14643 , H01L27/14645
摘要： An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode disposed in has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. The first photodiode can be used to for measuring low light and the second photodiode can be used for measuring bright light.
摘要翻译：用于高动态范围图像传感器的图像传感器像素包括第一光电二极管和第二光电二极管。第一光电二极管包括第一掺杂区域，第一轻掺杂区域和设置在第一掺杂区域和第一轻掺杂区域之间的第一高掺杂区域。设置在其中的第二光电二极管的第二全阱容量基本上等于第一光电二极管的第一全阱容量。第二光电二极管包括第二掺杂区域，第二轻掺杂区域和设置在第二掺杂区域和第二轻掺杂区域之间的第二高掺杂区域。第一光电二极管可用于测量低光，第二光电二极管可用于测量亮光。

28. 发明申请

US20150172579A1 METHOD OF READING OUT AN IMAGE SENSOR WITH TRANSFER GATE BOOST 有权
标题翻译：读取带有转移门的图像传感器的方法
公开(公告)号：US20150172579A1
公开(公告)日：2015-06-18
申请号：US14133127
申请日：2013-12-18
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Sohei Manabe , Jeong-Ho Lyu
IPC分类号： H04N5/378 , H01L27/146 , H04N5/3745
CPC分类号： H04N5/378 , H01L27/14641 , H04N5/3559 , H04N5/3598 , H04N5/37455 , H04N5/37457
摘要： An image sensor includes photosensitive regions, transfer transistors, and one or more shared charge-to-voltage mechanism. A method for reading out the image sensor includes enabling a first transfer transistor to transfer photo-generated charge from a first photosensitive region to a shared charge-to-voltage mechanism. The method also includes no more than partially enabling a second transfer transistor to partially turn on the second transfer transistor to increase a capacitance of the shared charge-to-voltage mechanism while the photo-generated charge is transferred from the first photosensitive region to the shared charge-to-voltage mechanism.
摘要翻译：图像传感器包括光敏区域，传输晶体管和一个或多个共用电荷 - 电压机构。读出图像传感器的方法包括：使第一传输晶体管能够将光电荷从第一光敏区域转移到共享的电荷 - 电压机构。该方法还包括不超过部分地允许第二传输晶体管部分地接通第二传输晶体管以增加共享的电荷 - 电压机构的电容，同时光电荷从第一感光区域传送到共享的充电电压机制。

29. 发明授权

US09054007B2 Image sensor pixel cell with switched deep trench isolation structure 有权
标题翻译：具有开关深沟槽隔离结构的图像传感器像素单元
公开(公告)号：US09054007B2
公开(公告)日：2015-06-09
申请号：US13968210
申请日：2013-08-15
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Sing-Chung Hu , Rongsheng Yang , Gang Chen , Howard E. Rhodes , Sohei Manabe , Hsin-Chih Tai
IPC分类号： H01L27/146 , H01L27/092
CPC分类号： H01L27/14643 , H01L27/0928 , H01L27/14601 , H01L27/1463 , H01L27/1464
摘要： A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode and the floating diffusion to selectively transfer image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure lined with a dielectric layer inside the DTI structure is disposed in the semiconductor material isolates the first region on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. Doped semiconductor material inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
摘要翻译：像素单元包括设置在半导体材料的第一区域中的外延层中的光电二极管。浮置扩散部设置在设置在第一区域的外延层中的阱区域中。传输晶体管设置在第一区域中并且耦合在光电二极管和浮动扩散之间以选择性地将图像电荷从光电二极管转移到浮动扩散。在DTI结构内部布置有介电层的深沟槽隔离（DTI）结构设置在半导体材料中，将DTI结构的一侧上的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离开。响应于传输晶体管选择性地将图像电荷从光电二极管转移到浮动扩散，DTI结构内部的掺杂半导体材料选择性地耦合到读出脉冲电压。

30. 发明申请

US20150048427A1 IMAGE SENSOR PIXEL CELL WITH SWITCHED DEEP TRENCH ISOLATION STRUCTURE 有权
标题翻译：具有开关深度分离隔离结构的图像传感器像素单元
公开(公告)号：US20150048427A1
公开(公告)日：2015-02-19
申请号：US13968210
申请日：2013-08-15
申请人： Omnivision Technologies, Inc.
发明人： Sing-Chung Hu , Rongsheng Yang , Gang Chen , Howard E. Rhodes , Sohei Manabe , Hsin-Chih Tai
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/0928 , H01L27/14601 , H01L27/1463 , H01L27/1464
摘要： A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode and the floating diffusion to selectively transfer image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure lined with a dielectric layer inside the DTI structure is disposed in the semiconductor material isolates the first region on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. Doped semiconductor material inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
摘要翻译：像素单元包括设置在半导体材料的第一区域中的外延层中的光电二极管。浮置扩散部设置在设置在第一区域的外延层中的阱区域中。传输晶体管设置在第一区域中并且耦合在光电二极管和浮动扩散之间以选择性地将图像电荷从光电二极管转移到浮动扩散。在DTI结构内部布置有介电层的深沟槽隔离（DTI）结构设置在半导体材料中，将DTI结构的一侧上的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离开。响应于传输晶体管选择性地将图像电荷从光电二极管转移到浮动扩散，DTI结构内部的掺杂半导体材料选择性地耦合到读出脉冲电压。

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