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21. 发明授权

US5254202A Fabrication of laser ablation masks by wet etching 失效
标题翻译：通过湿蚀刻制造激光烧蚀掩模
公开(公告)号：US5254202A
公开(公告)日：1993-10-19
申请号：US864838
申请日：1992-04-07
申请人： Leon H. Kaplan
发明人： Leon H. Kaplan
IPC分类号： C04B41/53 , C04B41/91 , G03F1/54 , G03F1/80 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/00
CPC分类号： C04B41/009 , C04B41/5353 , C04B41/91 , G03F1/54 , G03F1/80 , Y10T428/24331 , Y10T428/24917 , Y10T428/24926
摘要： Tantalum (or hafnium) oxide layers, alternated with silicon oxide layers in a dielectric stack reflector type mask for high power laser ablation, are wet etched at a high temperature with a highly caustic solution, preferably potassium hydroxide, to provide a much increased manufacturing yield in comparison with known processes such as ion milling. High feature density is achieved through the use of a resist which is built in two patterning steps. Preferably, a chromium layer is deposited and covered with an organic resist which is patterned by an optical or electron beam exposure. The chromium is then etched by means of the resist mask to form a resist for the caustic wet etch of the tantalum (or hafnium) oxide either separately or together with silicon oxide layers of the dielectric stack reflector mask to be used in the laser ablation process at high power.
摘要翻译：在用于大功率激光烧蚀的电介质堆叠反射器型掩模中与氧化硅层交替的钽（或铪）氧化物层在高温下用高苛性碱溶液（优选氢氧化钾）进行湿法蚀刻，以提供大大提高的制造成品率与已知的方法如离子研磨相比。通过使用内置于两个图案化步骤中的抗蚀剂来实现高特征密度。优选地，沉积铬层并用有机抗蚀剂覆盖，该有机抗蚀剂通过光学或电子束曝光被图案化。然后通过抗蚀剂掩模蚀刻铬，以形成用于钽（或铪）氧化物的苛性湿法蚀刻的抗蚀剂，分别或与电介质堆叠反射器掩模的氧化硅层一起用于激光烧蚀过程在高功率。

22. 发明授权

US4826556A Plastic mold decapsuling apparatus 失效
标题翻译：塑胶模具拆封装置
公开(公告)号：US4826556A
公开(公告)日：1989-05-02
申请号：US199708
申请日：1988-05-27
申请人： Nobutoshi Kobayashi
发明人： Nobutoshi Kobayashi
IPC分类号： H01L21/00 , B44C1/22 , B29C37/00 , C03C15/00 , C03C25/06
CPC分类号： H01L21/67126
摘要： A plastic mold decapsuling apparatus for decapsuling a plastic mold by feeding an etchant to the plastic mold comprises an etchant bottle; an etchant tank; a decapsuling plastic mold holder; an etchant feeding pump; and, in particular, a bell-shaped cover cap for shielding a plastic mold to be decapsuled on the mold holder from outside air to maintain pressure of the etchant fed by the etchant feeding pump. Since the plastic mold is shielded, even if the plastic mold is decapsuled, it is possible to maintain the etchant feeding pressure at a constant level without introducing outside air into the etchant recirculating passage, thus permitting a stable decapsuling treatment.
摘要翻译：一种用于通过向塑料模具馈入蚀刻剂来对塑料模具进行封装的塑料模具拆封装置包括蚀刻剂瓶; 蚀刻槽; 一个解封塑料模架; 蚀刻剂进料泵; 特别是用于屏蔽塑料模具的钟形盖帽，以从外部空气中将模具保持器解封装，以保持由蚀刻剂供给泵供给的蚀刻剂的压力。由于塑料模具被屏蔽，即使塑料模具被开封，也可以将蚀刻剂进料压力保持在恒定水平，而不会将外部空气引入到蚀刻剂再循环通道中，从而允许稳定的解封装处理。

23. 发明授权

US4816115A Process of making via holes in a double-layer insulation 失效
标题翻译：在双层绝缘中制作通孔的工艺
公开(公告)号：US4816115A
公开(公告)日：1989-03-28
申请号：US172738
申请日：1988-03-23
申请人： Eva Horner , Reinhold Muhl , Hans-Joachim Trumpp
发明人： Eva Horner , Reinhold Muhl , Hans-Joachim Trumpp
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/768 , B44C1/22 , B29C37/00 , C03C15/00 , C03C25/06
CPC分类号： H01L21/31138 , H01L21/76804
摘要： A method of making via holes in a double-layer insulation of nitride and polyimide. The via holes are made with one photomask only by applying a photoresist process with double exposure, and a multi-step dry etching process. The double exposure, which includes an image-wise exposure followed by blanket irradiation, achieves an edge angle in the photoresist between approx. 60.degree. and 70.degree., depending on the exposure time ratios. This angle is transferred into the polyimide layer in a dry etching process. In a first etching step with CF.sub.4 as etching gas the greater part of the polyimide is removed. For removing the residual polyimide in the via holes there now follows an etching step in O.sub.2. Etch bias is thus kept on a very low level. The nitride layer is then etched with CF.sub.4 as etching gas, with the etching process being executed in two steps, each followed by an etching step in O.sub.2 for laterally shifting the photoresist and the polyimide via the resist angle. By softening the step height a softer profile of the via holes is ensured, which permits very good covering by a second layer of metallurgy.
摘要翻译：在氮化物和聚酰亚胺的双层绝缘中制造通孔的方法。通孔仅通过使用双曝光的光致抗蚀剂工艺和多步骤干蚀刻工艺由一个光掩模制成。包括曝光后进行成像曝光的双重曝光在光致抗蚀剂中达到约 60°和70°，取决于曝光时间比。该干燥蚀刻工艺将该角度转移到聚酰亚胺层中。在用CF 4作为蚀刻气体的第一蚀刻步骤中，去除了大部分聚酰亚胺。为了去除通孔中的残余聚酰亚胺，现在在O 2中进行蚀刻步骤。因此，蚀刻偏压保持在非常低的水平。然后用CF4作为蚀刻气体蚀刻氮化物层，蚀刻过程分两步进行，随后在O 2中进行蚀刻步骤，以通过抗蚀剂角横向移动光致抗蚀剂和聚酰亚胺。通过软化台阶高度，确保通孔的较软的轮廓，这允许通过第二层冶金进行非常好的覆盖。

24. 发明授权

US4793896A Method for forming local interconnects using chlorine bearing agents 失效
标题翻译：使用含氯剂形成局部互连的方法
公开(公告)号：US4793896A
公开(公告)日：1988-12-27
申请号：US159852
申请日：1988-02-22
申请人： Monte A. Douglas
发明人： Monte A. Douglas
IPC分类号： C23F1/12 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/768 , B44C , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H01L21/31116 , H01L21/32137 , H01L21/76895
摘要： A method for etching titanium nitride local interconnects is disclosed. A layer of titanium nitride is formed as a by-product of the formation of titanium silicide by direct reaction; this layer of titanium nitride is present over the titanium silicide layer, as well as over insulators such as oxide. A plasma etch using CCl.sub.4 as the etchant is used to etch the titanium nitride anisotropically, and selectively relative to the titanium silicide due to the passivation of the titanium silicide surface by the carbon atoms of the CCl.sub.4. Excess chlorine concentration may be reduced, further reducing the undesired etching of the titanium silicide, by providing a consumable power electrode, or by introducing chlorine scavenger gases into the reactor. The plasma may be ignited by exposing the gases to a mercury/argon light source, photodetaching electrons from the anions in the gas.

25. 发明授权

US4789427A Method for removing resist from semiconductor device 失效
标题翻译：从半导体器件去除抗蚀剂的方法
公开(公告)号：US4789427A
公开(公告)日：1988-12-06
申请号：US51396
申请日：1987-05-19
申请人： Shuzo Fujimura , Yoshikazu Kato , Syouzi Mochizuki
发明人： Shuzo Fujimura , Yoshikazu Kato , Syouzi Mochizuki
IPC分类号： H01L21/30 , G03F7/42 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/311 , H01L21/312 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/311 , G03F7/42 , H01L21/31138 , H01L21/312
摘要： A method for removing a resist on a layer formed on a semiconductor substrate includes the steps of removing a portion of the resist by plasma processing and removing the remaining resist by a chemical process.This method prevents the entry of heavy metal particles contained in the resist into the semiconductor substrate, so that a functional region formed in the semiconductor substrate is not contaminated by the heavy metal particles. As a result, destruction of the functional elements formed in the functional region is prevented, and thus the minority carrier generation lifetime in the device is not reduced.

26. 发明授权

US4789423A Method for manufacturing multi-layer printed circuit boards 失效
标题翻译：制造多层印刷电路板的方法
公开(公告)号：US4789423A
公开(公告)日：1988-12-06
申请号：US45251
申请日：1987-04-27
申请人： Peter P. Pelligrino
发明人： Peter P. Pelligrino
IPC分类号： H05K3/20 , H05K3/22 , H05K3/38 , H05K3/46 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H05K3/4626 , H05K3/205 , H05K3/22 , H05K2201/0195 , H05K2201/09118 , H05K2203/0152 , H05K2203/068 , H05K2203/0726 , H05K3/386
摘要： Methods and apparatus for providing fine line, high density multiple layer printed circuit board packages are disclosed. In the method for fabricating multiple layer printed circuit board package, a printed circuit board is formed having a conductive circuit pattern embedded in and integral with an insulator materil substrate, such that the surface of the conductive circuit pattern is exposed along one surface of the substrate, and lays flush and coplanar with therewith. At least two of said boards are stacked with a layer of insulator material interposed between each pair of adjacent boards. The entire assembly is heat-pressed together to form a homogenous block of insulator material having conductive circuit patterns embedded and integrally molded therein.
摘要翻译：公开了提供细线，高密度多层印刷电路板封装的方法和设备。在制造多层印刷电路板封装的方法中，形成了印刷电路板，其具有嵌入并与绝缘体材料基底一体化的导电电路图案，使得导电电路图案的表面沿着基板的一个表面露出并与其平齐地共面。至少两个所述板堆叠有介于每对相邻板之间的绝缘体材料层。整个组件被热压在一起以形成具有嵌入并整体模制在其中的导电电路图案的绝缘体材料的均匀块。

27. 发明授权

US4786358A Method for forming a pattern of a film on a substrate with a laser beam 失效
标题翻译：用激光束在基板上形成膜图案的方法
公开(公告)号：US4786358A
公开(公告)日：1988-11-22
申请号：US082545
申请日：1987-08-07
申请人： Shunpei Yamazaki , Akira Mase , Hiroyuki Sakayori
发明人： Shunpei Yamazaki , Akira Mase , Hiroyuki Sakayori
IPC分类号： B23K26/06 , G02F1/1343 , G03F7/20 , H01L21/48 , H05K3/02 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H01L21/4846 , B23K26/066 , G02F1/13439 , G03F7/2006 , H05K3/027 , Y10S430/146
摘要： An improved method for forming a pattern on a substrate coated with a film is shown. The substrate is irradiated with a laser beam which is shaped through a mask, and a portion of the film is removed by the energy of the laser beam to produce the desired pattern. The laser beam is emitted from an exmer laser.
摘要翻译：示出了在涂覆有薄膜的基材上形成图案的改进方法。用通过掩模成形的激光束照射基板，并且通过激光束的能量去除膜的一部分以产生期望的图案。激光束从激光器发射。

28. 发明授权

US4784722A Method forming surface emitting diode laser 失效
标题翻译：方法形成表面发射二极管激光器
公开(公告)号：US4784722A
公开(公告)日：1988-11-15
申请号：US109945
申请日：1987-10-19
申请人： Zong-Long Liau , James N. Walpole
发明人： Zong-Long Liau , James N. Walpole
IPC分类号： H01S5/02 , H01S5/18 , H01S5/42 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01S5/18 , H01S5/0201 , H01S5/42 , H01S5/0203 , H01S5/1082 , Y10S438/978
摘要： A method and apparatus for forming a monolithic surface emitting laser diode array by providing vertical partly light transmissive mirror surfaces opposite parabolic light reflective mirror surfaces formed adjacent the active buried layer of a heterostructure diode laser. The mirror surfaces are preferably formed using a mass-transport heating process. Other mirror shapes may be formed in accordance with the invention.
摘要翻译：通过提供与异质结构二极管激光器的有源掩埋层相邻形成的抛物面反光镜面相对的垂直部分透光镜面形成单片表面发射激光二极管阵列的方法和装置。镜面优选使用质量传递加热方法形成。根据本发明可以形成其它镜面形状。

29. 发明授权

US4778562A Reactive ion etching of tin oxide films using neutral reactant gas containing hydrogen 失效
标题翻译：使用含氢的中性反应气体对氧化锡膜进行反应离子蚀刻
公开(公告)号：US4778562A
公开(公告)日：1988-10-18
申请号：US639853
申请日：1984-08-13
申请人： Shih-Chia Chang
发明人： Shih-Chia Chang
IPC分类号： C04B41/53 , C04B41/91 , H01L31/18 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： C04B41/009 , C04B41/5346 , C04B41/91 , H01L31/1884 , Y02E10/50
摘要： High resolution patterns can be etched in tin oxide films in one step using reactive ion etching when the reactant gas consists substantially of nitrogen and/or argon and from small but effective amounts of hydrogen up to about 10 percent by volume hydrogen.
摘要翻译：当反应物气体基本上由氮气和/或氩气组成并且从小而有效量的氢气达到约10体积％的氢气时，可以在一个步骤中使用反应离子蚀刻在氧化锡膜中蚀刻高分辨率图案。

30. 发明授权

US4775444A Process for fabricating multilayer circuit boards 失效
标题翻译：多层电路板制造工艺
公开(公告)号：US4775444A
公开(公告)日：1988-10-04
申请号：US89741
申请日：1987-08-26
申请人： John L. Cordani
发明人： John L. Cordani
IPC分类号： C23F1/00 , C23C22/24 , H05K3/38 , H05K3/46 , C23F1/02 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： C23C22/24 , H05K3/384 , H05K3/385 , H05K2203/0315 , H05K2203/072 , H05K3/4611
摘要： Printed circuit boards having copper circuit patterns coated with an adhesion promoter (e.g., copper oxide, tin) are subjected to the action of an aqueous chromic acid solution prior to incorporation in a multi-layer board by interposing layers of semi-cured polymeric non-conductive material between the individual boards and laminating the assembly using heat and pressure. The chromic acid treatment serves to improve adhesion between the layers and, in particular, to overcome or minimize the "pink ring" effect which is frequently observed around holes drilled through multilayer boards.
摘要翻译：具有涂覆有粘合促进剂（例如氧化铜，锡）的铜电路图案的印刷电路板在通过插入半固化聚合物非离子表面层之前在铬酸水溶液的作用下被引入多层板中，导电材料在单独的板之间并且使用热和压力层压组件。铬酸处理用于改善层之间的粘合性，特别是克服或最小化在通过多层板钻孔的孔周围经常观察到的“粉红色环”效应。

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