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21. 发明授权

US10134591B2 Method for manufacturing a semiconductor device 有权
公开(公告)号：US10134591B2
公开(公告)日：2018-11-20
申请号：US15517681
申请日：2014-10-07
申请人： Tandem Sun AB
发明人： Yanting Sun
IPC分类号： H01L21/02 , H01L31/028 , H01L31/0304 , H01L31/0336 , H01L31/107 , H01L31/18
摘要： This invention is directed toward a method for manufacturing a semiconductor device with a heterostructure comprises covering a semiconductor structure with a seed layer structure; forming one or more separated circularly shaped openings in the seed layer structure to expose the semiconductor structure therein, and leave the seed layer structure outside the one or more separated circularly shaped openings; forming an insulator layer thereon; etching the obtained structure to (i) expose at least a portion of the seed layer structure, such that the exposed at least portion of the seed layer structure surrounds each of the one or more separated circularly shaped openings, and (ii) optionally expose the semiconductor structure, in the one or more separated circularly shaped openings; and epitaxially growing a semiconductor layer from the exposed at least portion of the seed layer structure, firstly mainly vertically and then into each of the one or more separated circularly shaped openings until the epitaxially grown semiconductor layer coalesces with the insulator layer or the semiconductor structure in each of the one or more separated circularly shaped openings.

22. 发明授权

US10096736B1 P-Type chalcogenide and n-type silicon heterojunction infared photodiodes and method of manufacturing thereof 有权
公开(公告)号：US10096736B1
公开(公告)日：2018-10-09
申请号：US15900738
申请日：2018-02-20
申请人： HRL Laboratories, LLC
发明人： Jeong-Sun Moon , Hwa Chang Seo
IPC分类号： H01L21/00 , H01L31/109 , H01L31/02 , H01L45/00 , H01L31/18 , H01L31/0216 , H01L31/0336 , H01L31/0272
摘要： A photodetector comprising a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon; wherein the p-type phase-change chalcogenide material comprises one of GeTe and SbTe.

23. 发明申请

US20180198015A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 审中-公开
公开(公告)号：US20180198015A1
公开(公告)日：2018-07-12
申请号：US15741783
申请日：2016-07-06
申请人： The Hong Kong University of Science and Technology
发明人： Qinglin He , Ying Hoi Lai , Yi Liu , Iam Keong Sou
IPC分类号： H01L31/108 , H01L31/0336 , H01L31/0224 , H01L31/18 , H01L21/66
CPC分类号： H01L31/108 , H01L21/02395 , H01L21/02568 , H01L21/0259 , H01L21/02631 , H01L22/26 , H01L29/122 , H01L29/22 , H01L29/267 , H01L31/00 , H01L31/022408 , H01L31/022491 , H01L31/0304 , H01L31/032 , H01L31/0328 , H01L31/0336 , H01L31/036 , H01L31/18
摘要： A diode, UV radiation detector, and method of manufacturing semiconductor device that includes a diode with a substrate having a first side and a second side. The diode includes an active layer having a rocksalt phase crystalline structure of CaS disposed on the first side of the substrate, and an electrical contact disposed on the second side of the substrate. The diode also includes a semi-transparent conducting layer disposed on the active layer. The UV radiation detector includes the diode and circuitry connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector may detect radiation having a wavelength between 220 and 280 nm. The substrate may have a lattice mismatch between 0.47% and 12.6% with respect to the active layer.

24. 发明授权

US09741901B2 Two-terminal electronic devices and their methods of fabrication 有权
公开(公告)号：US09741901B2
公开(公告)日：2017-08-22
申请号：US14339210
申请日：2014-07-23
申请人： CBRITE INC.
发明人： Gang Yu , Chan-Long Shieh , Zhao Chen
IPC分类号： H01L27/32 , H01L27/146 , H01L27/30 , H01L33/00 , H01L33/06 , H01L33/34 , H01L33/26 , H01L33/42 , H01L51/05 , H01L31/072 , H01L31/046 , H01L31/0224 , H01L31/0336 , H01L31/032 , H01L31/0312 , H01L31/0272 , H01L31/0352 , H01L31/18 , H01L51/42 , H01L51/44 , H01L51/56 , H01L51/52 , H01L51/50 , H01L51/00
CPC分类号： H01L33/42 , H01L27/14665 , H01L27/14669 , H01L27/14676 , H01L27/14683 , H01L27/14696 , H01L27/307 , H01L27/308 , H01L27/3241 , H01L31/046 , H01L31/072 , H01L33/005 , H01L33/06 , H01L33/26 , H01L33/34 , H01L51/004 , H01L51/0081 , H01L51/0085 , H01L51/0587 , H01L51/4253 , H01L51/502 , H01L51/5088 , H01L51/5092 , H01L51/5096 , H01L2251/5353 , H01L2933/0016 , Y02E10/50
摘要： Two-terminal electronic devices, such as photodetectors, photovoltaic devices and electroluminescent devices, are provided. The devices include a first electrode residing on a substrate, wherein the first electrode comprises a layer of metal; an I-layer comprising an inorganic insulating or broad band semiconducting material residing on top of the first electrode, and aligned with the first electrode, wherein the inorganic insulating or broad band semiconducting material is a compound of the metal of the first electrode; a semiconductor layer, preferably comprising a p-type semiconductor, residing over the I-layer; and a second electrode residing over the semiconductor layer, the electrode comprising a layer of a conductive material. The band gap of the material of the semiconductor layer, is preferably smaller than the band gap of the I-layer material. The band gap of the material of the I-layer is preferably greater than 2.5 eV.

25. 发明申请

US20170236968A1 PHOTOELECTRONIC DEVICE INCLUDING CHARGE BARRIER 有权
公开(公告)号：US20170236968A1
公开(公告)日：2017-08-17
申请号：US15181804
申请日：2016-06-14
申请人： Samsung Electronics Co., Ltd.
发明人： Jinseong HEO , Kiyoung Lee , Jaeho Lee , Sangyeob Lee , Eunkyu Lee , Seongjun Park
IPC分类号： H01L31/109 , H01L31/0216 , H01L31/0224 , H01L31/0392 , H01L31/0336
CPC分类号： H01L31/109 , H01L31/02161 , H01L31/022466 , H01L31/0336 , H01L31/0352 , H01L31/072 , Y02E10/50
摘要： A photoelectronic device includes a semiconductor substrate doped with a first type impurity, a second semiconductor layer doped with a second type impurity of an opposite type to the first type impurity, a transparent electrode formed on a second surface of the second semiconductor layer, the second surface being opposite a first surface on which the semiconductor substrate is formed, and a barrier layer disposed between the second semiconductor layer and the semiconductor substrate or between the second semiconductor layer and the transparent electrode. The second semiconductor layer has a band gap energy less than that of the semiconductor substrate, and the barrier layer includes a semiconductor material or an insulator having a band gap greater than that of the semiconductor substrate.

26. 发明申请

US20170194527A1 NANO AVALANCHE PHOTODIODE ARCHITECTURE FOR PHOTON DETECTION 审中-公开
公开(公告)号：US20170194527A1
公开(公告)日：2017-07-06
申请号：US15356152
申请日：2016-11-18
申请人： NARSINGH B. SINGH , JOHN V. VELIADIS , BETTINA NECHAY , ANDRE BERGHMANS , DAVID J. KNUTESON , DAVID KAHLER , BRIAN WAGNER , MARC SHERWIN
发明人： NARSINGH B. SINGH , JOHN V. VELIADIS , BETTINA NECHAY , ANDRE BERGHMANS , DAVID J. KNUTESON , DAVID KAHLER , BRIAN WAGNER , MARC SHERWIN
IPC分类号： H01L31/107 , H01L31/18 , H01L31/0336 , H01L27/144 , H01L31/0232
CPC分类号： H01L31/1075 , H01L27/1443 , H01L27/1446 , H01L31/02327 , H01L31/0336 , H01L31/035227 , H01L31/18
摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

27. 发明授权

US09608028B2 Image sensor and method for manufacturing same 有权
公开(公告)号：US09608028B2
公开(公告)日：2017-03-28
申请号：US14903700
申请日：2014-07-08
申请人： Rayence Co., Ltd. , Vatech Ewoo Holdings Co., Ltd.
发明人： Tae Woo Kim , Dong Jin Lee
IPC分类号： H01L27/146 , H01L31/0264 , H01L31/0296 , H01L31/0224 , H01L31/0336
CPC分类号： H01L27/14676 , H01L27/14601 , H01L27/14636 , H01L27/14658 , H01L27/14683 , H01L27/14696 , H01L31/0224 , H01L31/0296 , H01L31/0336
摘要： Disclosed is an image sensor, which is characterized by increased strength of adhesion between a photoconductive layer and a front electrode made of aluminum, and which includes a first electrode composed of aluminum, copper or an aluminum-copper alloy on a substrate, a buffer layer formed on the first electrode, a photoconductive layer formed on the buffer layer, and a second electrode formed on the photoconductive layer, wherein the buffer layer includes a material having higher strength of adhesion than the photoconductive layer to the first electrode.

28. 发明申请

US20170062648A1 HYBRID MULTI-JUNCTION PHOTOVOLTAIC CELLS AND ASSOCIATED METHODS 有权
标题翻译：混合多结节光电池及相关方法
公开(公告)号：US20170062648A1
公开(公告)日：2017-03-02
申请号：US15137696
申请日：2016-04-25
申请人： Ascent Solar Technologies, Inc.
发明人： Lawrence M. Woods , Rosine M. Ribelin , Prem Nath
IPC分类号： H01L31/18 , H01L31/073 , H01L31/0336
CPC分类号： H01L31/18 , H01L21/0256 , H01L21/02579 , H01L21/385 , H01L31/0336 , H01L31/0392 , H01L31/046 , H01L31/0725 , H01L31/073 , H01L31/1828 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.
摘要翻译：多结光伏电池包括在基板上形成的基板和背接触层。在背面接触层上形成低带隙IB-IIIB-VIB2族材料太阳能吸收层。异质结伙伴层形成在低带隙太阳能吸收层上，以帮助形成底部电池结，异质结伙伴层包括至少一层具有至少100欧姆 - 厘米电阻率的高电阻率材料层。高电阻率材料具有式（Zn和/或Mg）（S，Se，O和/或OH）。在异质结伙伴层之上形成导电互连层，并且在导电互连层上形成至少一个附加的单结光伏电池作为顶部电池。顶部单元可以具有非晶硅或p型硒化镉太阳能吸收层。硒化镉可以用氯化物掺杂工艺从n型转变成p型。

29. 发明授权

US09450121B2 Solid-state imaging device and electronic apparatus 有权
标题翻译：固态成像装置和电子装置
公开(公告)号：US09450121B2
公开(公告)日：2016-09-20
申请号：US14567067
申请日：2014-12-11
申请人： Sony Corporation
发明人： Koji Nagahiro
IPC分类号： H01L31/0336 , H01L27/146 , H01L31/032 , H01L31/09
CPC分类号： H01L31/0322 , H01L27/14632 , H01L27/14645 , H01L31/09 , Y02E10/541
摘要： A solid-state imaging device includes a photoelectric conversion device that includes a non-chalcopyrite-based compound semiconductor of at least one layer, which is lattice bonded or pseudo lattice bonded, and is formed on a silicon substrate, and a chalcopyrite-based compound semiconductor of at least one layer which is formed on the non-chalcopyrite-based compound semiconductor.
摘要翻译：固态成像装置包括：光电转换装置，其包括至少一层的非黄铜矿型化合物半导体，该化合物半导体是晶格键合或伪晶格结合的，并且形成在硅衬底上，以及基于黄铜矿的化合物形成在非黄铜矿基化合物半导体上的至少一层的半导体。

30. 发明授权

US09385224B2 Method of forming an integrated multichannel device and single channel device structure 有权
标题翻译：形成集成多通道器件和单通道器件结构的方法
公开(公告)号：US09385224B2
公开(公告)日：2016-07-05
申请号：US14458906
申请日：2014-08-13
申请人： Karen M. Renaldo , Eric J. Stewart , Robert S. Howell , Howell George Henry , Harlan Carl Cramer , Justin Andrew Parke , Matthew Russell King
发明人： Karen M. Renaldo , Eric J. Stewart , Robert S. Howell , Howell George Henry , Harlan Carl Cramer , Justin Andrew Parke , Matthew Russell King
IPC分类号： H01L29/76 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L29/778 , H01L21/02 , H01L21/76 , H01L29/06 , H01L21/302 , H01L29/66
CPC分类号： H01L29/155 , H01L21/0254 , H01L21/302 , H01L21/3065 , H01L21/7605 , H01L21/76224 , H01L21/76877 , H01L21/8252 , H01L27/0605 , H01L27/085 , H01L29/0642 , H01L29/0649 , H01L29/2003 , H01L29/205 , H01L29/41725 , H01L29/42316 , H01L29/518 , H01L29/66431 , H01L29/66462 , H01L29/7783
摘要： An integrated circuit is disclosed that includes a single channel device having a first portion of a single shared heterostructure overlying a substrate structure in a single channel device area, and a gate contact that is in contact with the first portion of the single shared heterostructure. The integrated circuit also includes a multichannel device comprising a second portion of the single shared heterostructure overlying the substrate structure in a multichannel device area, a barrier layer overlying the second portion of the single shared heterostructure, and a superlattice structure overlying the barrier layer, the superlattice structure comprising a plurality of heterostructures. An isolation region in the single shared heterostructure electrical isolates the single channel device from the multichannel device.
摘要翻译：公开了一种集成电路，其包括具有在单通道器件区域中覆盖衬底结构的单个共享异质结构的第一部分的单通道器件，以及与单个共用异质结构的第一部分接触的栅极接触。集成电路还包括多通道器件，其包括覆盖多通道器件区域中的衬底结构的单个共享异质结构的第二部分，覆盖在单个共用异质结构的第二部分上的阻挡层，以及覆盖在阻挡层上的超晶格结构，超晶格结构包括多个异质结构。单个共享异质结构中的隔离区域将单通道器件与多通道器件隔离。

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