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21. 发明授权

US09608156B2 Assembly and mounting of solar cells on space panels 有权
公开(公告)号：US09608156B2
公开(公告)日：2017-03-28
申请号：US14795461
申请日：2015-07-09
申请人： SolAero Technologies Corp.
发明人： Marvin B. Clevenger , Benjamin C. Richards , Cory Tourino
IPC分类号： H01L21/00 , H01L31/0725 , H01L31/041 , H01L31/0735 , H01L31/048 , H01L31/0304 , H01L31/074 , H01L31/18 , H01L31/049
CPC分类号： H01L31/0725 , H01L31/03046 , H01L31/041 , H01L31/048 , H01L31/049 , H01L31/0508 , H01L31/0735 , H01L31/074 , H01L31/18 , Y02E10/544 , Y02P70/521
摘要： The present disclosure provides a method of fabricating a solar cell panel in an automated process by applying an adhesive pattern to a support, positioning a solar cell assembly over the pattern, and applying pressure to adhere the assembly to the support.

22. 发明授权

US09548409B2 Solar cell having doped semiconductor heterojunction contacts 有权
标题翻译：具有掺杂半导体异质结触点的太阳能电池
公开(公告)号：US09548409B2
公开(公告)日：2017-01-17
申请号：US14459062
申请日：2014-08-13
申请人： SunPower Corporation
发明人： Peter John Cousins
IPC分类号： H01L31/028 , H01L31/0392 , H01L31/0745 , H01L31/0747 , H01L31/0224 , H01L31/0376 , H01L31/068 , H01L31/18 , H01L31/0216 , H01L31/074
CPC分类号： H01L31/02008 , H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/02366 , H01L31/03682 , H01L31/03762 , H01L31/03921 , H01L31/068 , H01L31/074 , H01L31/0745 , H01L31/0747 , H01L31/1804 , Y02E10/50 , Y02E10/548 , Y02P70/521
摘要： A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.
摘要翻译：硅太阳能电池已经在硅衬底的表面上形成在隧道氧化硅层上的掺杂非晶硅接触。制造太阳能电池时不需要高温处理。

23. 发明申请

US20160118525A1 III-V PHOTOVOLTAIC ELEMENTS 有权
公开(公告)号：US20160118525A1
公开(公告)日：2016-04-28
申请号：US14982991
申请日：2015-12-29
申请人： International Business Machines Corporation
发明人： Stephen W. Bedell , Bahman Hekmatshoartabari , Devendra K. Sadana , Davood Shahrjerdi
IPC分类号： H01L31/074 , H01L31/0216 , H01L31/0224
CPC分类号： H01L31/074 , H01L31/02167 , H01L31/022466 , H01L31/0304 , H01L31/036 , H01L31/077 , H01L31/20 , Y02E10/50 , Y02E10/544 , Y02P70/521
摘要： Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a III-V base. Additionally, a solar cell structure having improved open circuit voltage includes a shallow junction III-V emitter formed by epitaxy or diffusion followed by the epitaxy of SixGe1−x passivated by amorphous SiyGe1−y:H.

24. 发明申请

US20160087138A1 TRANSPARENT CONDUCTING OXIDE FOR PHOTOVOLTAIC DEVICES 审中-公开
标题翻译：用于光伏器件的透明导电氧化物
公开(公告)号：US20160087138A1
公开(公告)日：2016-03-24
申请号：US14954831
申请日：2015-11-30
申请人： SolarCity Corporation
发明人： Jianming Fu , Zheng Xu , Jiunn Benjamin Heng , Chentao Yu
IPC分类号： H01L31/074 , H01L31/0216 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/074 , H01L31/02167 , H01L31/022466 , H01L31/022475 , H01L31/072 , H01L31/075 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： One embodiment of the present invention provides a solar cell. The solar cell includes a Si base layer, a passivation layer situated above the Si base layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a first transparent-conducting-oxide (TCO) layer situated above the heavily doped a-Si layer, a back-side electrode situated below the Si base layer, and a front-side electrode situated above the first TCO layer. The first TCO layer comprises at least one of: GaInO, GaInSnO, ZnInO, and ZnInSnO.
摘要翻译：本发明的一个实施例提供一种太阳能电池。太阳能电池包括Si基底层，位于Si基底层之上的钝化层，位于钝化层上方的重掺杂非晶硅层（a-Si）层，位于上面的第一透明导电氧化物（TCO）层重掺杂的a-Si层，位于Si基底层下方的背面电极和位于第一TCO层上方的前侧电极。第一TCO层包括GaInO，GaInSnO，ZnInO和ZnInSnO中的至少一种。

25. 发明申请

US20160013350A1 GROUP-IV SOLAR CELL STRUCTURE USING GROUP-IV or III-V HETEROSTRUCTURES 有权
公开(公告)号：US20160013350A1
公开(公告)日：2016-01-14
申请号：US14807347
申请日：2015-07-23
申请人： The Boeing Company
发明人： Richard R. King , Christopher M. Fetzer , Nasser H. Karam
IPC分类号： H01L31/074 , H01L31/18 , H01L31/0725
CPC分类号： H01L31/074 , H01L31/0687 , H01L31/0725 , H01L31/0735 , H01L31/0745 , H01L31/078 , H01L31/18 , Y02E10/50 , Y02E10/544
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

26. 发明申请

US20150214392A1 PHOTOVOLTAIC CELL HAVING A HETEROJUNCTION AND METHOD FOR MANUFACTURING SUCH A CELL 审中-公开
标题翻译：具有异位的光电池和制造这种细胞的方法
公开(公告)号：US20150214392A1
公开(公告)日：2015-07-30
申请号：US14430401
申请日：2013-09-24
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Julien Buckley , Pierre Mur
IPC分类号： H01L31/0216 , H01L31/074 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/072 , H01L31/074 , H01L31/0747 , H01L31/1868 , Y02E10/50
摘要： The invention relates to a photovoltaic cell having a heterojunction, including a doped substrate (1), in which: a first main face (1A) of said substrate is covered with a passivation layer (2A), a doped layer (3A) of the type opposite to the substrate and forming the transmitter of said cell; the second main face (1B) of said substrate is covered with a passivation layer (2B), a doped layer (3B) of the same type as the substrate defining a repulsing field for the minor carriers of the substrate; characterized in that: the material of the passivation layer (2A) on the transmitter (E) side is selected so as to have a lower potential barrier for the photo-generated minor carriers than for the major carrier of the substrate; and in that the material of the passivation layer (2B) on the side of the repulsing field (BSF) is selected so as to have a lower potential barrier for all the photo-generated major carriers than for the minor carriers of the substrate.
摘要翻译：本发明涉及一种具有异质结的光伏电池，包括掺杂衬底（1），其中：所述衬底的第一主面（1A）被钝化层（2A）覆盖，掺杂层（3A）类型与衬底相反并形成所述电池的发射器; 所述衬底的第二主面（1B）被钝化层（2B），与衬底相同类型的掺杂层（3B）覆盖，所述衬底限定用于衬底的次要载流子的排斥场; 其特征在于，选择发射机（E）侧的钝化层（2A）的材料，以使得对于光生的副载流子具有比基板的主载体更低的势垒; 并且选择在排斥场侧（BSF）侧的钝化层（2B）的材料，以便对于所有的光生主载流子具有比对于衬底的次要载流子更低的势垒。

27. 发明申请

US20140345679A1 MULTIJUNCTION PHOTOVOLTAIC DEVICE HAVING SIGE(SN) AND GAASNSB CELLS 审中-公开
标题翻译：具有信号（SN）和GAASNSB细胞的多功能光伏器件
公开(公告)号：US20140345679A1
公开(公告)日：2014-11-27
申请号：US14342016
申请日：2012-08-14
申请人： Andrew Johnson
发明人： Andrew Johnson
IPC分类号： H01L31/0725 , H01L31/0216 , H01L31/18 , H01L31/0735 , H01L31/074
CPC分类号： H01L31/0328 , H01L29/16 , H01L29/20 , H01L29/267 , H01L31/02167 , H01L31/03044 , H01L31/068 , H01L31/0687 , H01L31/06875 , H01L31/0725 , H01L31/0735 , H01L31/074 , H01L31/1812 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A multijunction tandem photovoltaic device is disclosed having a bottom subcell of silicon germanium or silicon germanium tin material and above that a subcell of gallium nitride arsenide antimonide material. The materials are lattice matched to gallium arsenide, which preferably forms the substrate. Preferably, further lattice matched subcells of gallium arsenide, indium gallium phosphide and aluminium gallium arsenide or aluminium indium gallium phosphide are provided.
摘要翻译：公开了一种多结串联光伏器件，其具有硅锗或硅锗锡材料的底部子电池，并且高于氮化镓砷化锑化物材料的子电池。这些材料与砷化镓晶格匹配，优选形成衬底。优选地，提供了砷化镓，磷酸铟镓和砷化镓镓或铝铟镓磷化物的另外的晶格匹配子电池。

28. 发明申请

US20140326301A1 MULTIJUNCTION PHOTOVOLTAIC DEVICE HAVING SIGE(SN) AND (IN)GAASNBI CELLS 审中-公开
标题翻译：具有信号（SN）和（在）GAASNBI细胞的多功能光伏器件
公开(公告)号：US20140326301A1
公开(公告)日：2014-11-06
申请号：US14342061
申请日：2012-08-14
申请人： Andrew Johnson
发明人： Andrew Johnson
IPC分类号： H01L31/0725 , H01L31/074 , H01L31/18
CPC分类号： H01L31/0328 , H01L29/16 , H01L29/20 , H01L29/267 , H01L31/02167 , H01L31/03044 , H01L31/068 , H01L31/0687 , H01L31/06875 , H01L31/0725 , H01L31/0735 , H01L31/074 , H01L31/1812 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A multijunction tandem photovoltaic device is disclosed having a bottom subcell of silicon germanium or silicon germanium tin material and above that a subcell of gallium nitride arsenide bismide, or indium gallium nitride arsenide bismide, material. The materials are lattice matched to gallium arsenide, which preferably forms the substrate. Preferably, further lattice matched subcells of gallium arsenide, indium gallium phosphide and aluminium gallium arsenide or aluminium indium gallium phosphide are provided.
摘要翻译：公开了一种多结串联光伏器件，其具有硅锗或硅锗锡材料的底部子电池，并且高于氮化镓砷化铋二次电池或氮化镓镓砷化物铋的子电池。这些材料与砷化镓晶格匹配，优选形成衬底。优选地，提供了砷化镓，磷酸铟镓和砷化镓镓或铝铟镓磷化物的另外的晶格匹配子电池。

29. 发明申请

US20140007932A1 FLEXIBLE III-V SOLAR CELL STRUCTURE 有权
标题翻译：柔性III-V太阳能电池结构
公开(公告)号：US20140007932A1
公开(公告)日：2014-01-09
申请号：US13568121
申请日：2012-08-06
申请人： Stephen W. Bedell , Cheng-Wei Cheng , Bahman Hekmatshoartabari , Ning Li , Devendra K. Sadana , Davood Shahrjerdi
发明人： Stephen W. Bedell , Cheng-Wei Cheng , Bahman Hekmatshoartabari , Ning Li , Devendra K. Sadana , Davood Shahrjerdi
IPC分类号： H01L31/074
CPC分类号： H01L31/06875 , H01L21/02381 , H01L21/02433 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/02664 , H01L31/03042 , H01L31/0735 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： Solar cell structures include stacked layers in reverse order on a germanium substrate wherein a n++ (In)GaAs buffer layer plays dual roles as buffer and contact layers in the inverted structures. The absorbing layers employed in such exemplary structures are III-V layers such as (In)GaAs. Controlled spalling may be employed as part of the fabrication process for the solar cell structures, which may be single or multi-junction. The requirement for etching a buffer layer is eliminated, thereby facilitating the manufacturing process of devices using the disclosed structures.
摘要翻译：太阳能电池结构在锗衬底上以相反的顺序包括堆叠层，其中n ++（In）GaAs缓冲层在倒置结构中起缓冲层和接触层的双重作用。在这种示例性结构中采用的吸收层是III-V层，例如（In）GaAs。受控的剥落可以用作太阳能电池结构的制造过程的一部分，其可以是单结或多结。消除了蚀刻缓冲层的要求，从而便于使用公开的结构的器件的制造过程。

30. 发明授权

US5942772A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5942772A
公开(公告)日：1999-08-24
申请号：US44845
申请日：1998-03-20
申请人： Katsunori Nishii , Mitsuru Nishitsuji , Takahiro Yokoyama , Akiyoshi Tamura
发明人： Katsunori Nishii , Mitsuru Nishitsuji , Takahiro Yokoyama , Akiyoshi Tamura
IPC分类号： H01L29/812 , H01L21/335 , H01L21/338 , H01L21/76 , H01L29/10 , H01L29/778 , H01L29/80 , H01L31/0328 , H01L31/0336 , H01L31/109 , H01L31/074
CPC分类号： H01L29/66446 , H01L21/7605 , H01L29/1029 , H01L29/7783 , H01L29/802
摘要： A heterojunction epitaxial layer, including a first semiconductor layer containing Al and having a thickness of 50 nm or less and a second semiconductor layer different in composition from the first semiconductor layer, is formed on a substrate composed of semi-insulating GaAs. A gate electrode is formed on a specified region of the top surface of the heterojunction epitaxial layer. The source/drain formation regions of the heterojunction epitaxial layer are provided with respective high-concentration N-type impurity diffusion regions, on which respective ohmic electrodes are formed.
摘要翻译：在由半绝缘GaAs构成的衬底上形成异质结外延层，其包含含有Al且厚度为50nm以下的第一半导体层和与第一半导体层的组成不同的第二半导体层。栅电极形成在异质结外延层的顶表面的特定区域上。异质结外延层的源极/漏极形成区域设置有各自形成有各自的欧姆电极的高浓度N型杂质扩散区域。

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