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31. 发明申请

US20070279803A1 THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM 有权
标题翻译：薄膜磁头，头盖组件和硬盘系统
公开(公告)号：US20070279803A1
公开(公告)日：2007-12-06
申请号：US11756134
申请日：2007-05-31
申请人： Kei Hirata , Tetsuya Roppongi , Kiyoshi Noguchi
发明人： Kei Hirata , Tetsuya Roppongi , Kiyoshi Noguchi
IPC分类号： G11B5/147
CPC分类号： G11B5/1278 , B82Y10/00 , G11B5/11 , G11B5/3116 , G11B5/3146 , G11B5/743
摘要： The invention provides a thin-film magnetic head wherein the combined release angle Φ for a dominant recording magnetic field generated from a magnetic pole layer toward a patterned media for the purpose of recording magnetic information is set to within an angle range of 35° to 65° with respect to a patterned media surface. It is thus possible to invert, with efficiency and reliability, the directions of magnetization of isolate bits lined up on the patterned media for high-density recording.
摘要翻译：本发明提供了一种薄膜磁头，其中用于记录磁信息的从磁极层向图案化介质产生的主要记录磁场的组合释放角Phi设定在35°至65°的角度范围内 °相对于图案化介质表面。因此，可以以效率和可靠性反转排列在图案化介质上的高密度记录的隔离位的磁化方向。

32. 发明授权

US07262941B2 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效
标题翻译： FeTa纳米氧化物层作为覆盖层，用于增强底部自旋阀结构中的巨磁阻
公开(公告)号：US07262941B2
公开(公告)日：2007-08-28
申请号：US10856180
申请日：2004-05-28
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G11B5/39
CPC分类号： C22C38/10 , B32B15/01 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C22C38/12 , G01R33/093 , G11B5/3163 , G11B5/3903 , H01F10/3259 , H01F10/3272 , H01F41/302 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer. As a result of their structure and the method of their fabrication, these elements have higher GMR ratios and lower resistances than elements of the prior art.
摘要翻译：一种具有合成反铁磁性钉扎（SyAP）层的NiCr种子层底部自旋阀传感器元件和包括单个镜面反射纳米氧化物层（NOL）或包含非金属层的双层和镜面反射纳米氧化物层反射纳米氧化层。由于它们的结构及其制造方法的结果，这些元件具有比现有技术的元件更高的GMR比和更低的电阻。

33. 发明申请

US20060203379A1 Perpendicular magnetic recording element, thin film magnetic head, magnetic head device, and magnetic recording/reproducing apparatus 有权
标题翻译：垂直磁记录元件，薄膜磁头，磁头装置和磁记录/重放装置
公开(公告)号：US20060203379A1
公开(公告)日：2006-09-14
申请号：US11337659
申请日：2006-01-24
申请人： Kei Hirata , Takahiko Machita , Kiyoshi Noguchi
发明人： Kei Hirata , Takahiko Machita , Kiyoshi Noguchi
IPC分类号： G11B5/127
CPC分类号： G11B5/1278
摘要： A perpendicular magnetic recording element includes a recording magnetic pole film and a write shield film. The recording magnetic pole film has a yoke portion and a main magnetic pole for perpendicular recording. The main magnetic pole projects from a front end of the yoke portion to have an end on a medium-facing surface. The write shield film faces the recording magnetic pole film and has a height equal to or smaller than that of the recording magnetic pole film, as measured rearward from the medium-facing surface.
摘要翻译：垂直磁记录元件包括记录磁极膜和写保护膜。记录磁极膜具有用于垂直记录的磁轭部分和主磁极。主磁极从磁轭部的前端突出，以在中间面的表面上具有一端。写入屏蔽膜面向记录磁极膜，并且具有与记录磁极膜相同或更小的高度，从中间面向后测量。

34. 发明授权

US06909583B2 FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效
标题翻译： FeTa纳米氧化物层，用于增强底部自旋阀结构中的巨磁阻
公开(公告)号：US06909583B2
公开(公告)日：2005-06-21
申请号：US10437090
申请日：2003-05-13
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G01R33/09 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
摘要翻译：一种用于形成底部自旋阀传感器的方法，该底部自旋阀传感器具有反结合磁耦合到钉扎层的合成反铁磁钉扎（SyAP）层，其中SyAP的一个层形成为三层层压，其包含镜面反射氧化物层 FeTaO。根据该方法形成的传感器具有非常高的GMR比，并且具有良好的钉扎强度。

35. 发明授权

US4599280A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US4599280A
公开(公告)日：1986-07-08
申请号：US603668
申请日：1984-04-25
申请人： Toshiaki Izumi , Kiyoshi Noguchi , Misao Kohmoto
发明人： Toshiaki Izumi , Kiyoshi Noguchi , Misao Kohmoto
IPC分类号： G11B5/85 , G11B5/64
CPC分类号： G11B5/85 , Y10S428/90
摘要： In a magnetic recording medium comprising a length of a non-magnetic plastic substrate and a magnetic thin layer of Co or Co-Ni or Co-Ni-Cr formed thereon, when the coercive force of the medium is measured by changing the measuring direction in a plane defined by a longitudinal direction of the substrate and a direction normal to the major surface of the substrate, the following relationship is met:(Hc.sub.max -Hc.sub.min)/Hc(0).ltoreq.0.9where Hc.sub.max is the maximum coercive force, Hc.sub.min is the minimum coercive force, and Hc(0) is a coercive force in the longitudinal direction of the substrate.
摘要翻译：在包含一定长度的非磁性塑料基板和其上形成有Co或Co-Ni或Co-Ni-Cr的磁性薄层的磁记录介质中，当通过改变介质的测量方向来测量介质的矫顽力时由基板的纵向和垂直于基板的主表面的方向限定的平面，满足以下关系：（Hcmax-Hcmin）/ Hc（0）

36. 发明授权

US4550062A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US4550062A
公开(公告)日：1985-10-29
申请号：US561521
申请日：1983-12-15
申请人： Suguru Takayama , Kiyoshi Noguchi , Kouji Kobayashi
发明人： Suguru Takayama , Kiyoshi Noguchi , Kouji Kobayashi
IPC分类号： G11B5/706 , G11B5/64 , G11B5/65 , G11B5/66 , G11B5/716 , G11B5/85
CPC分类号： G11B5/716 , G11B5/66 , Y10S428/928 , Y10T428/12465 , Y10T428/12611 , Y10T428/12861 , Y10T428/12931
摘要： A magnetic recording medium which comprises a first layer formed on a substrate and comprising Co; Co and Ni; Co and O; or Co, Ni and O, and a second magnetic layer formed on the first magnetic layer and comprising Co and Cr at a weight ratio of Co/Cr being from 2.5 to 8.
摘要翻译：一种磁记录介质，包括形成在基底上并包含Co的第一层; Co和Ni; Co和O; 或Co，Ni和O，以及形成在第一磁性层上并以Co / Cr的重量比为2.5至8的Co和Cr的第二磁性层。

37. 发明授权

US08154828B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08154828B2
公开(公告)日：2012-04-10
申请号：US12500835
申请日：2009-07-10
申请人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
发明人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm2, an MR element that has a large variation of a resistance is obtained.
摘要翻译： CPP结构中的MR元件包括由Cu制成的间隔层，包含CoFe的磁性固定层和层压以夹持间隔层的CoFe的自由层。自由层位于磁性固定层的下方。自由层在（001）晶面取向，间隔层形成并定向在自由层的（001）晶面上的（001）晶面上。因此，在MR元件的面积电阻率（AR）例如低于0.3

38. 发明申请

US20110242696A1 MICROWAVE ASSISTED MAGNETIC HEAD 有权
标题翻译： MICROWAVE辅助磁头
公开(公告)号：US20110242696A1
公开(公告)日：2011-10-06
申请号：US12750870
申请日：2010-03-31
申请人： Hiroshi IKEDA , Isamu Sato , Kiyoshi Noguchi , Tsutomu Aoyama , Takuya Adachi
发明人： Hiroshi IKEDA , Isamu Sato , Kiyoshi Noguchi , Tsutomu Aoyama , Takuya Adachi
IPC分类号： G11B5/02
CPC分类号： G11B5/314 , G11B5/1278 , G11B2005/0024
摘要： A gap between a main pole and auxiliary pole composing a thin film magnetic head having a microwave assisted function of the present invention is filled with a nonmagnetic dielectric layer to embed a microwave radiator. The nonmagnetic dielectric layer has an inclined surface at a end on a side of an opposing medium surface by which the microwave radiated from the microwave radiator to be bent toward the main pole, whereby the microwave magnetic field generated from the microwave generator can be gathered immediately below the main pole, further improving the microwave assisted effect.
摘要翻译：构成本发明的具有微波辅助功能的薄膜磁头的主极和辅助极之间的间隙填充有非磁性介电层以嵌入微波辐射器。非磁性介电层在相对的介质表面的一侧的端部具有倾斜表面，微波从微波辐射器辐射到微波辐射器，从而微波发生器产生的微波磁场可以立即收集主杆下方进一步提高微波辅助效果。

39. 发明申请

US20110204886A1 MAGNETIC SENSOR, MAGNETIC DETECTOR, AND MAGNETIC HEAD 有权
标题翻译：磁传感器，磁性探测器和磁头
公开(公告)号：US20110204886A1
公开(公告)日：2011-08-25
申请号：US13017707
申请日：2011-01-31
申请人： Tomoyuki SASAKI , Tohru OIKAWA , Kiyoshi NOGUCHI
发明人： Tomoyuki SASAKI , Tohru OIKAWA , Kiyoshi NOGUCHI
IPC分类号： G01R33/02 , G11B5/23
CPC分类号： G01R33/1284 , B82Y25/00 , G01R33/093
摘要： A magnetic sensor comprises a first ferromagnetic body, a second ferromagnetic body, a channel extending from the first ferromagnetic body to the second ferromagnetic body, a magnetic shield covering the channel, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the channel.
摘要翻译：磁传感器包括第一铁磁体，第二铁磁体，从第一铁磁体延伸到第二铁磁体的通道，覆盖通道的磁屏蔽以及设置在通道和磁屏蔽之间的绝缘膜，而磁屏蔽件具有朝向通道延伸的通孔。

40. 发明授权

US07876534B2 Magneto-resistive effect device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻效应器，磁盘系统
公开(公告)号：US07876534B2
公开(公告)日：2011-01-25
申请号：US12014575
申请日：2008-01-15
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Kiyoshi Noguchi
IPC分类号： G11B5/11 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive device comprising a magnetoresistive unit, an upper shield layer and a lower shield layer stacked such that the magnetoresistive unit is held between them. The magnetoresistive unit comprises a nonmagnetic metal intermediate layer, a first ferromagnetic layer and a second ferromagnetic layer stacked with the nonmagnetic metal intermediate layer in the middle. When no bias magnetic field is applied, the first and second ferromagnetic layers have mutually antiparallel magnetizations. The magnetoresistive unit further comprises first and second side shield layers, and first and second biasing layers located to be magnetically coupled to the first and second side shield layers, wherein magnetic fluxes fed from the bias magnetic fields pass through the first and second side shield layers positioned in proximity to the magnetoresistive unit such that the magnetizations of the first and second ferromagnetic layers become substantially orthogonal to each other.
摘要翻译：磁阻器件包括磁阻单元，上屏蔽层和下屏蔽层，以使磁阻单元保持在它们之间。磁阻单元包括在中间与非磁性金属中间层堆叠的非磁性金属中间层，第一铁磁层和第二铁磁层。当不施加偏置磁场时，第一和第二铁磁层具有相互反平行的磁化。磁阻单元还包括第一和第二侧屏蔽层，以及第一和第二偏置层，其被定位成磁耦合到第一和第二侧屏蔽层，其中从偏置磁场馈送的磁通量通过第一和第二侧屏蔽层位于磁阻单元附近，使得第一和第二铁磁层的磁化基本上彼此正交。

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