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1. 发明授权

US08081394B2 Information recording apparatus and method, information reproducing method and fade-in memory, with summary information corresponding to plurality of information recording elements 有权
标题翻译：信息记录装置和方法，信息再现方法和淡出存储器，具有对应于多个信息记录元素的概要信息
公开(公告)号：US08081394B2
公开(公告)日：2011-12-20
申请号：US12890010
申请日：2010-09-24
申请人： Migaku Takahashi , Masakiyo Tsunoda , Shin Saito , Tomoyuki Ogawa , Itaru Fujimura , Shigeyoshi Misawa , Toshiyuki Kawasaki
发明人： Migaku Takahashi , Masakiyo Tsunoda , Shin Saito , Tomoyuki Ogawa , Itaru Fujimura , Shigeyoshi Misawa , Toshiyuki Kawasaki
IPC分类号： G11B5/02 , G02B6/10 , G01N21/55 , G01J3/44 , G11C8/00
CPC分类号： G11C11/14 , B82Y10/00 , G11B9/02 , G11B11/00 , G11C13/04
摘要： An information recording apparatus has a plurality of fine particles forming an array on a plane in close proximity of each other, each of the plural particles including a ferromagnetic metal, a light-emitting device for exciting a near-field light, and a photo-electric conversion element for detecting a near-field light traveled along the fine particles. Summary information may be recorded for plural information recording parts.
摘要翻译：信息记录装置具有在彼此靠近的平面上形成阵列的多个细颗粒，所述多个颗粒中的每一个包括强磁性金属，用于激发近场光的发光装置和光电二极管，电转换元件，用于检测沿着细颗粒行进的近场光。可以记录多个信息记录部分的摘要信息。

2. 发明申请

US20090169915A1 METHOD OF PRODUCING MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTANCE EFFECT ELEMENT 失效
标题翻译：生产磁阻效应元件和磁阻效应元件的方法
公开(公告)号：US20090169915A1
公开(公告)日：2009-07-02
申请号：US12340236
申请日：2008-12-19
申请人： Migaku Takahashi , Masakiyo Tsunoda , Koujiro Komagaki , Yuji Uehara , Kazuyuki Sunaga
发明人： Migaku Takahashi , Masakiyo Tsunoda , Koujiro Komagaki , Yuji Uehara , Kazuyuki Sunaga
IPC分类号： B32B37/14 , B32B15/00
CPC分类号： B32B37/06 , B32B2307/208 , B32B2309/02 , B32B2309/105 , B32B2309/68 , B32B2311/00 , B32B2457/00 , H01L43/08 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T156/10 , Y10T428/12465
摘要： The method of the present invention provides a magnetoresistance effect element, which is capable of having a high MR ratio, corresponding to high density recording and being suitably applied to a magnetoresistance device even though a barrier layer is thinned to reduce resistance of the magnetoresistance effect element. The method of producing the magnetoresistance effect element, which includes the barrier layer composed of an oxidized metal, a first magnetic layer contacting one of surfaces of the barrier layer and a second magnetic layer contacting the other surface thereof, comprises the steps of: laminating the barrier layer on the first magnetic layer with using a target composed of the oxidized metal; and laminating the second magnetic layer on the barrier layer. The barrier layer is annealed before laminating the second magnetic layer thereon.
摘要翻译：本发明的方法提供了一种磁阻效应元件，其能够具有对应于高密度记录的高MR比，并且适当地应用于磁阻器件，即使势垒层变薄以降低磁阻效应元件的电阻。制造磁阻效应元件的方法，其包括由氧化金属构成的阻挡层，与阻挡层的一个表面接触的第一磁性层和与其另一个表面接触的第二磁性层，包括以下步骤：使用由氧化金属构成的靶，在第一磁性层上形成阻挡层; 并将第二磁性层层叠在阻挡层上。在层叠第二磁性层之前对阻挡层进行退火。

3. 发明申请

US20090168270A1 EXCHANGE-COUPLED ELEMENT AND MAGNETORESISTANCE EFFECT ELEMENT 审中-公开
标题翻译：交换耦合元件和磁阻效应元件
公开(公告)号：US20090168270A1
公开(公告)日：2009-07-02
申请号：US12342419
申请日：2008-12-23
申请人： Migaku Takahashi , Masakiyo Tsunoda , Koujiro Komagaki , Yuji Uehara
发明人： Migaku Takahashi , Masakiyo Tsunoda , Koujiro Komagaki , Yuji Uehara
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F10/3295
摘要： In comparison with conventional exchange-coupled elements, the exchange-coupled element of the present invention has greater unidirectional magnetization anisotropy. The exchange-coupled element comprises: an ordered antiferromagnetic layer; and a pinned magnetic layer being exchange-coupled with the ordered antiferromagnetic layer, the pinned magnetic layer having unidirectional magnetization anisotropy. The pinned magnetic layer is constituted by a first pinned magnetic layer having a composition, which can have a face-centered cubic lattice structure, and a second pinned magnetic layer having a composition, which can have a body-centered cubic lattice structure.
摘要翻译：与传统的交换耦合元件相比，本发明的交换耦合元件具有更大的单向磁化各向异性。交换耦合元件包括：有序反铁磁层; 并且被钉扎的磁性层与有序的反铁磁层交换耦合，钉扎的磁性层具有单向磁化各向异性。钉扎磁性层由具有面心立方晶格结构的组成的第一固定磁性层和具有体心立方晶格结构的具有组成的第二固定磁性层构成。

4. 发明授权

US06482329B1 Method for manufacturing magnetoresistance element 失效
标题翻译：制造磁阻元件的方法
公开(公告)号：US06482329B1
公开(公告)日：2002-11-19
申请号：US09381822
申请日：2000-12-18
申请人： Migaku Takahashi , Satoshi Miura , Masakiyo Tsunoda
发明人： Migaku Takahashi , Satoshi Miura , Masakiyo Tsunoda
IPC分类号： H01F4118
CPC分类号： B82Y25/00 , B82Y40/00 , H01F41/18 , H01F41/308 , H01L43/12
摘要： A method of manufacturing a magnetoresistance element which can reproduce magnetic signals with higher sensitivity. The manufacturing method includes the steps of providing a vacuum below 10−9 Torr in a film forming chamber for forming a nonmagnetic layer and ferromagnetic layer; performing plasma-etching of the surface of a substrate body by using a mixture of a gas (a) containing at least oxygen or water introduced into the chamber and an Ar gas (b) introduced into the chamber in a vacuum, state controlled to higher than 10−9 Torr; and forming the nonmagnetic and ferromagnetic layers on the etched substrate body by sputtering a prescribed target by using the mixture of the gases (a) and (b).
摘要翻译：一种制造可以以更高灵敏度再现磁信号的磁阻元件的方法。该制造方法包括以下步骤：在用于形成非磁性层和铁磁层的成膜室中提供10 -9乇以下的真空; 通过使用至少含有氧气或引入室中的水的气体（a）和在真空中引入室中的Ar气体（b）进行等离子体蚀刻，从而对基体的表面进行等离子体蚀刻，状态被控制到更高超过10-9乇; 以及通过使用气体（a）和（b）的混合物溅射规定的靶材，在蚀刻的基板主体上形成非磁性和铁磁性层。

5. 发明授权

US5534843A Thermistor 失效
标题翻译：热敏电阻
公开(公告)号：US5534843A
公开(公告)日：1996-07-09
申请号：US189163
申请日：1994-01-28
申请人： Masakiyo Tsunoda , Hiroaki Nakajima , Masami Koshimura
发明人： Masakiyo Tsunoda , Hiroaki Nakajima , Masami Koshimura
IPC分类号： H01C1/02 , H01C1/034 , H01C1/14 , H01C7/04 , H01C17/00 , H01C7/10
CPC分类号： H01C7/008 , H01C1/034 , H01C1/1406
摘要： An insulating glass layer covers the surface of a thermistor element except at the two end surfaces. The insulating glass layer is partially or fully composed of crystallized glass. A terminal electrode is integrally formed on both end surfaces. The terminal electrodes include a baked-on electrode layer formed from a conductive paste. Layers of nickel and tin or lead/tin are plated onto the baked-on electrode. The insulating glass layer enhances shape-maintainability of the insulating glass layer and the baked-on electrodes, provides a smoother glass surface, resulting in a more aesthetically pleasing thermistor, prevents resistance variance due to plating of the baked-on electrodes and provides a strong anti-breaking strength thermistor. The coefficient of thermal expansion of the glass layer is less than the coefficient of thermal expansion of the thermistor element. This difference in coefficients of thermal expansion tends to help the thermistor element resist stress breakage.
摘要翻译：绝热玻璃层覆盖热敏电阻元件的表面，除了两个端面外。绝缘玻璃层部分或全部由结晶玻璃组成。端子电极整体形成在两个端面上。端子电极包括由导电浆料形成的焙烤电极层。镍和锡或铅/锡的层被镀在焙烤电极上。绝缘玻璃层增强了绝缘玻璃层和烘烤电极的形状维持性，提供了更平滑的玻璃表面，从而形成了更美观的热敏电阻，防止了由于焙烤电极的电镀导致的电阻变化，并提供了强烈的抗断强度热敏电阻。玻璃层的热膨胀系数小于热敏电阻元件的热膨胀系数。热膨胀系数的这种差异有助于热敏电阻元件抵抗应力断裂。

6. 发明申请

US20110255197A1 MICROWAVE OSCILLATING ELEMENT AND THIN FILM MAGNETIC HEAD THEREWITH 有权
标题翻译：微波振荡元件和薄膜磁头
公开(公告)号：US20110255197A1
公开(公告)日：2011-10-20
申请号：US12763577
申请日：2010-04-20
申请人： Yoshihiro TSUCHIYA , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
发明人： Yoshihiro TSUCHIYA , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： G11B5/127 , G11B5/48 , H02N99/00
CPC分类号： G11B5/6005 , G11B5/314 , G11B2005/0024
摘要： A microwave oscillation element of the present invention includes a lamination main part in which an oscillating layer that is a magnetization free layer and that generates a high frequency electromagnetic field by an excitation of a spin wave, a nonmagnetic intermediate layer, a polarizer layer, and a reference layer that is to be a base magnetic layer of a spin transfer due to application of current are layered in this order. The oscillating layer is made of CoIr, the polarizer layer is configured of CoCr or CoRu; and the nonmagnetic intermediate layer is configured of Cr or Ru. As a result, the efficiency of the spin injection is improved and the microwave oscillation element where the oscillation efficiency is excellent can be realized.
摘要翻译：本发明的微波振荡元件包括层叠主体部，其中，作为磁化自由层的振动层，通过自旋波的激发产生高频电磁场，非磁性中间层，偏振片层和将由于施加电流而成为自旋转移的基础磁性层的参考层按此顺序分层。振荡层由CoIr制成，偏振层由CoCr或CoRu构成; 非磁性中间层由Cr或Ru构成。结果，提高了自旋注入的效率，并且可以实现振荡效率优异的微波振荡元件。

7. 发明申请

US20070110347A1 ANTI-MOMENT STATIC-PRESSURE GAS BEARING MECHANISM 有权
标题翻译：防静电气压轴承机构
公开(公告)号：US20070110347A1
公开(公告)日：2007-05-17
申请号：US11552680
申请日：2006-10-25
申请人： Soichi Sato , Takashi Abe , Eiko Miyasato , Migaku Takahashi , Masakiyo Tsunoda
发明人： Soichi Sato , Takashi Abe , Eiko Miyasato , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： F16C32/06
CPC分类号： F16C29/007 , F16C29/025 , F16C32/06 , F16C32/0603 , F16C2300/62
摘要： A first and a second static-pressure gas bearings supporting a rod at two locations in the axial direction in the non-contact manner are provided, in which the first static-pressure gas bearing is fixedly supported by a bearing housing, while the second static-pressure gas bearing is supported capable of displacement through a movable support mechanism. And this movable support mechanism has an actuator and suppresses contact of the rod with the static-pressure gas bearings by displacing the shaft center of the second static-pressure gas bearing with respect to the first static-pressure gas bearing by this actuator according to a load acting on the rod.
摘要翻译：提供了以非接触方式在轴向两个位置处支撑杆的第一和第二静压气体轴承，其中第一静压气体轴承由轴承壳体固定地支撑，而第二静态压力气体轴承支撑能够通过可移动的支撑机构移动。并且该可动支承机构具有致动器，并通过使该致动器相对于该致动器相对于第一静压气体轴承移动第二静压气体轴承的轴心而抑制杆与静压气体轴承的接触，作用在杆上的载荷。

8. 发明申请

US20070107739A1 STRAIGHT CONVEYING DEVICE FOR VACUUM 有权
标题翻译：直接输送真空装置
公开(公告)号：US20070107739A1
公开(公告)日：2007-05-17
申请号：US11552674
申请日：2006-10-25
申请人： Soichi Sato , Takashi Abe , Eiko Miyasato , Migaku Takahashi , Masakiyo Tsunoda
发明人： Soichi Sato , Takashi Abe , Eiko Miyasato , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： A24C5/18
CPC分类号： H01L21/67742 , F16C2300/62 , Y10S414/135
摘要： A working rod with a tip end extending into a vacuum process chamber and moving in the axial direction, two static-pressure gas bearings supporting the rod in the non-contact manner, and an internal moving body of a magnet coupling type driving mechanism driving the rod are housed in a rod housing cylindrical portion leading to the vacuum process chamber, and an exhaust portion by suction is provided at a part of the rod housing cylindrical portion so that the pressure of the rod housing cylindrical portion is lowered than the pressure of the vacuum process chamber by the exhaust from the exhaust portion.
摘要翻译：一种工作杆，其具有延伸到真空处理室中并沿轴向方向移动的顶端，两个以非接触方式支撑杆的静压气体轴承，以及驱动该连杆驱动机构的磁体联接型驱动机构的内部移动体杆容纳在通向真空处理室的杆壳体圆柱形部分中，并且在杆壳体圆柱形部分的一部分处设置有通过抽吸的排气部分，使得杆壳体圆柱形部分的压力比真空处理室由排气部分排出。

9. 发明授权

US08154828B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08154828B2
公开(公告)日：2012-04-10
申请号：US12500835
申请日：2009-07-10
申请人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
发明人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm2, an MR element that has a large variation of a resistance is obtained.
摘要翻译： CPP结构中的MR元件包括由Cu制成的间隔层，包含CoFe的磁性固定层和层压以夹持间隔层的CoFe的自由层。自由层位于磁性固定层的下方。自由层在（001）晶面取向，间隔层形成并定向在自由层的（001）晶面上的（001）晶面上。因此，在MR元件的面积电阻率（AR）例如低于0.3

10. 发明申请

US20080180860A1 Magnetic thin film and magnetoresistance effect element 审中-公开
标题翻译：磁性薄膜和磁阻效应元件
公开(公告)号：US20080180860A1
公开(公告)日：2008-07-31
申请号：US11998361
申请日：2007-11-29
申请人： Migaku Takahashi , Masakiyo Tsunoda , Kojiro Komagaki
发明人： Migaku Takahashi , Masakiyo Tsunoda , Kojiro Komagaki
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , G11B2005/3996 , H01F10/3254 , H01F10/3272
摘要： In the magnetic thin film, a magnetization direction of a ferromagnetic layer, e.g., a pinned layer, can be securely fixed. The magnetic thin film comprises: an antiferromagnetic layer; and the ferromagnetic layer. The antiferromagnetic layer is composed of a manganic antiferromagnetic material, and a manganese (Mn) layer is formed between the antiferromagnetic layer and the ferromagnetic layer.
摘要翻译：在磁性薄膜中，可以牢固地固定铁磁层的磁化方向，例如被钉扎层。磁性薄膜包括：反铁磁层; 和铁磁层。反铁磁层由锰铁反铁磁性材料构成，反铁磁层与铁磁层之间形成锰（Mn）层。

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