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    • 3. 发明授权
    • Temperature assisted magnetic recording element having grounded near field light generator
    • 具有接地近场光发生器的温度辅助磁记录元件
    • US08385021B2
    • 2013-02-26
    • US12722742
    • 2010-03-12
    • Shinji HaraTsutomu ChouYoshihiro Tsuchiya
    • Shinji HaraTsutomu ChouYoshihiro Tsuchiya
    • G11B5/31G11B5/02
    • G11B5/314B82Y20/00G02B6/1226G11B5/3116G11B5/6005G11B5/6088G11B2005/0021
    • A plasmon generator positioned away from the substrate and extending to the air bearing surface (ABS) as facing a part of the waveguide. The plasmon generator has a propagation edge extending in a longitudinal direction. The propagation edge has an overlapping part overlapping the waveguide in the longitudinal direction, and a near field light generator positioned on the ABS and located in the vicinity of the edge part of the recording magnetic pole. The overlapping part of the propagation edge is coupled with the laser light propagating through the waveguide in a surface plasmon mode so that a surface plasmon is generated. The propagation edge propagates the surface plasmon generated in the overlapping part to the near field light generator. The magnetic recording element further has a grounding element electrically connecting the plasmon generator and the substrate.
    • 等离子体发生器远离基板定位并且面向波导的一部分延伸到空气轴承表面(ABS)。 等离子体发生器具有沿纵向方向延伸的传播边缘。 传播边缘具有在纵向上与波导重叠的重叠部分,以及位于ABS上且位于记录磁极的边缘部分附近的近场光发生器。 传播边缘的重叠部分与以表面等离子体模式传播通过波导的激光耦合,从而产生表面等离子体激元。 传播边缘将在重叠部分中产生的表面等离子体激元传播到近场光发生器。 磁记录元件还具有电连接等离子体发生器和基板的接地元件。
    • 8. 发明授权
    • Heat-assisted magnetic recording head including plasmon generator
    • 热辅助磁记录头包括等离子体发生器
    • US08116175B2
    • 2012-02-14
    • US12719496
    • 2010-03-08
    • Tsutomu ChouEiji KomuraKoji ShimazawaShinji Hara
    • Tsutomu ChouEiji KomuraKoji ShimazawaShinji Hara
    • G11B11/00
    • G11B11/00G11B5/02
    • A plasmon generator has a near-field light generating part located in a medium facing surface. The plasmon generator has an outer surface including a plasmon exciting surface and a plasmon propagating surface that face toward opposite directions. The plasmon exciting surface is substantially in contact with an evanescent light generating surface of a waveguide's core. The plasmon propagating surface is in contact with a dielectric layer that has a refractive index lower than that of the core. The plasmon exciting surface includes a first width changing portion. The plasmon propagating surface includes a second width changing portion. Each of the first and second width changing portions has a width that decreases with decreasing distance to the medium facing surface, the width being in a direction parallel to the medium facing surface and the evanescent light generating surface.
    • 等离子体发生器具有位于介质面对表面中的近场光产生部分。 等离子体发生器具有外表面,其包括面向相反方向的等离子体激元表面和等离子体激元传播表面。 等离子体激元表面基本上与波导芯的瞬逝光产生表面接触。 等离子体激元传播表面与折射率低于芯的折射率的电介质层接触。 等离子体激元表面包括第一宽度改变部分。 等离子体激元传播表面包括第二宽度改变部分。 第一和第二宽度改变部分中的每一个具有随着到介质面对表面的距离的减小而减小的宽度,宽度在平行于介质面向表面和渐逝光产生表面的方向上。
    • 9. 发明授权
    • Fabrication process for magnetoresistive devices of the CPP type
    • CPP型磁阻器件的制造工艺
    • US08029853B2
    • 2011-10-04
    • US12292566
    • 2008-11-20
    • Hironobu MatsuzawaTsutomu ChouYoshihiro TsuchiyaShinji Hara
    • Hironobu MatsuzawaTsutomu ChouYoshihiro TsuchiyaShinji Hara
    • B05D5/12
    • G11B5/3163B82Y25/00B82Y40/00G01R33/098G11B5/3906H01F10/3254H01F41/307H01L43/12
    • The inventive fabrication process for magnetoresistive devices (CPP-GMR devices) involves the formation of a zinc oxide or ZnO layer that provides the intermediate layer of a spacer layer, comprising Zn film formation operation for forming a zinc or Zn layer and Zn film oxidization operation for oxidizing the zinc film after the Zn film formation operation. The Zn film formation operation is implemented such that after a multilayer substrate having a multilayer structure before the formation of the Zn film is cooled down to the temperature range of −140° C. to −60° C., the formation of the Zn film is set off, and the Zn film oxidization operation is implemented such that after the completion of the Zn film oxidization operation, oxidization treatment is set off at the substrate temperature range of −120° C. to −40° C. Thus, excelling in both flatness and crystallizability, the ZnO layer makes sure the device has high MR ratios, and can further have an area resistivity AR best suited for the device.
    • 用于磁阻器件(CPP-GMR器件)的本发明制造方法涉及形成提供间隔层的中间层的氧化锌或ZnO层,其包括用于形成锌或Zn层的Zn膜形成操作和Zn膜氧化操作 用于在Zn膜形成操作之后氧化锌膜。 实施Zn膜形成操作,使得在形成Zn膜之前具有多层结构的多层基板被冷却至-140℃至-60℃的温度范围,形成Zn膜 并且进行Zn膜氧化操作,使得在Zn膜氧化操作完成之后,在-120℃至-40℃的衬底温度范围内,氧化处理被降低。因此,优异的 平坦度和结晶性,ZnO层确保器件具有高MR比,并且还可以具有最适合于器件的面积电阻率AR。