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41. 发明授权

US08183122B2 Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film 有权
标题翻译：包含半导体薄膜的半导体薄膜，其经受热处理以具有对准标记，用于半导体薄膜的结晶方法和用于半导体薄膜的结晶装置
公开(公告)号：US08183122B2
公开(公告)日：2012-05-22
申请号：US12838206
申请日：2010-07-16
申请人： Hiroyuki Ogawa , Noritaka Akita , Yukio Taniguchi , Masato Hiramatsu , Masayuki Jyumonji , Masakiyo Matsumura
发明人： Hiroyuki Ogawa , Noritaka Akita , Yukio Taniguchi , Masato Hiramatsu , Masayuki Jyumonji , Masakiyo Matsumura
IPC分类号： H01L21/76
CPC分类号： H01L21/02678 , H01L21/2026 , H01L21/268 , H01L23/544 , H01L27/1214 , H01L27/1285 , H01L27/1288 , H01L29/78675 , H01L2223/5442 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.
摘要翻译：促进在非晶或多晶膜中形成的再结晶区域的精确取向。形成对准标记，其可用于在再结晶区域中形成诸如薄膜晶体管的电子器件的步骤。此外，在从半导体膜获得大晶粒尺寸的晶相半导体的步骤中，在相同的曝光步骤中，在半导体膜上形成可用作后续步骤中的对准标记的标记结构。因此，本发明包括调制光并形成用于结晶的光强度分布的光强调制结构，以及调制光并形成包括具有预定形状的图案的光强度分布的标记形成结构，并且还形成标记在结晶区域上的预定位置。

42. 发明申请

US20100304546A1 SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR THIN FILM, WHICH IS SUBJECTED TO HEAT TREATMENT TO HAVE ALIGNMENT MARK, CRYSTALLIZING METHOD FOR THE SEMICONDUCTOR THIN FILM, AND CRYSTALLIZING APPARATUS FOR THE SEMICONDUCTOR THIN FILM 有权
标题翻译：包括半导体薄膜的半导体器件，其被热处理以具有对准标记，用于半导体薄膜的晶体化方法和用于半导体薄膜的结晶器件
公开(公告)号：US20100304546A1
公开(公告)日：2010-12-02
申请号：US12838206
申请日：2010-07-16
申请人： Hiroyuki Ogawa , Noritaka Akita , Yukio Taniguchi , Masato Hiramatsu , Masayuki Jyumonji , Masakiyo Matsumura
发明人： Hiroyuki Ogawa , Noritaka Akita , Yukio Taniguchi , Masato Hiramatsu , Masayuki Jyumonji , Masakiyo Matsumura
IPC分类号： H01L21/02
CPC分类号： H01L21/02678 , H01L21/2026 , H01L21/268 , H01L23/544 , H01L27/1214 , H01L27/1285 , H01L27/1288 , H01L29/78675 , H01L2223/5442 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.
摘要翻译：促进在非晶或多晶膜中形成的再结晶区域的精确取向。形成对准标记，其可用于在再结晶区域中形成诸如薄膜晶体管的电子器件的步骤。此外，在从半导体膜获得大晶粒尺寸的晶相半导体的步骤中，在相同的曝光步骤中，在半导体膜上形成可用作后续步骤中的对准标记的标记结构。因此，本发明包括调制光并形成用于结晶的光强度分布的光强调制结构，以及调制光并形成包括具有预定形状的图案的光强度分布的标记形成结构，并且还形成标记在结晶区域上的预定位置。

43. 发明申请

US20080289573A1 CRYSTALLIZATION METHOD, CRYSTALLIZATION APPARATUS, PROCESSED SUBSTRATE, THIN FILM TRANSISTOR AND DISPLAY APPARATUS 失效
标题翻译：结晶方法，结晶装置，处理基板，薄膜晶体管和显示装置
公开(公告)号：US20080289573A1
公开(公告)日：2008-11-27
申请号：US12166997
申请日：2008-07-02
申请人： Masayuki JYUMONJI , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
发明人： Masayuki JYUMONJI , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
IPC分类号： B05B5/00
CPC分类号： H01L21/02678 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , Y10T117/1004 , Y10T117/1008
摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
摘要翻译：提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求，结晶装置，薄膜晶体管和显示装置。当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少，熔融非单晶半导体的光强度。此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

44. 发明授权

US07118946B2 Thin film transistor, circuit device and liquid crystal display 有权
标题翻译：薄膜晶体管，电路器件和液晶显示器
公开(公告)号：US07118946B2
公开(公告)日：2006-10-10
申请号：US10508818
申请日：2003-03-04
申请人： Masato Hiramatsu , Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Yoshitaka Yamamoto
发明人： Masato Hiramatsu , Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Yoshitaka Yamamoto
IPC分类号： H01L21/00
CPC分类号： H01L29/78696 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78618 , H01L29/78675
摘要： A thin film transistor includes a one conductive type semiconductor layer; a source region and a drain region which are separately provided in the semiconductor layer; and a gate electrode provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width of the junction face between the source region and the channel which is provided between the source region and drain region, is different from the width of the junction face between the above channel region and the drain region.
摘要翻译：薄膜晶体管包括一个导电型半导体层; 源极区和漏极区，分别设置在半导体层中; 以及设置在所述半导体层的上方或下方的绝缘膜的栅电极，其中，所述源极区域与设置在所述源极区域与漏极区域之间的所述沟道的接合面的宽度不同于在上述沟道区域和漏极区域之间的接合面。

45. 发明申请

US20060186412A1 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus 审中-公开
标题翻译：结晶方法，结晶装置，处理衬底，薄膜晶体管和显示装置
公开(公告)号：US20060186412A1
公开(公告)日：2006-08-24
申请号：US11408022
申请日：2006-04-21
申请人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
发明人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
IPC分类号： H01L29/76
CPC分类号： H01L21/02678 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , Y10T117/1004 , Y10T117/1008
摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
摘要翻译：提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求，结晶装置，薄膜晶体管和显示装置。当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少，熔融非单晶半导体的光强度。此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

46. 发明授权

US06946367B2 Methods for forming a semiconductor thin film 有权
标题翻译：形成半导体薄膜的方法
公开(公告)号：US06946367B2
公开(公告)日：2005-09-20
申请号：US10366754
申请日：2003-02-13
申请人： Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Masayuki Jyumonji , Yukio Taniguchi , Masato Hiramatsu , Fumiki Nakano
发明人： Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Masayuki Jyumonji , Yukio Taniguchi , Masato Hiramatsu , Fumiki Nakano
IPC分类号： B23K26/06 , C30B1/00 , C30B13/00 , C30B13/24 , H01L21/20 , H01L21/268 , H01L21/322
CPC分类号： H01L21/02678 , B23K26/06 , B23K26/066 , B23K2101/40 , C30B1/00 , C30B13/24 , C30B29/06 , H01L21/02691 , H01L21/2026 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016
摘要： Methods for forming a single crystal semiconductor thin film layer from a non-single crystal layer includes directing a light source having a homogenized intensity distribution and a modulated amplitude towards the non-single crystal layer, and relatively moving the light with respect to the layer wherein the amplitude of the conditioned light is preferably increased in the direction of relative motion of the light to the layer. Preferred methods also include multiple light exposures in overlapping series to form ribbon-shaped single crystal regions, and providing a low temperature point in the semiconductor layer to generate a starting location for single crystalization.
摘要翻译：从非单晶层形成单晶半导体薄膜层的方法包括将具有均匀强度分布和调制振幅的光源引向非单晶层，并相对于其相对移动光，调节后的光的振幅优选在光的相对运动方向上增加。优选的方法还包括重叠系列中的多次曝光以形成带状单晶区域，并且在半导体层中提供低温点以产生用于单晶化的起始位置。

47. 发明授权

US06558988B1 Method for manufacturing crystalline semiconductor thin film and thin film transistor 有权
标题翻译：晶体半导体薄膜和薄膜晶体管的制造方法
公开(公告)号：US06558988B1
公开(公告)日：2003-05-06
申请号：US09671173
申请日：2000-09-28
申请人： Koji Suzuki , Masato Hiramatsu
发明人： Koji Suzuki , Masato Hiramatsu
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/2022 , H01L27/12 , H01L27/1277
摘要： The present invention provides a method for manufacturing a crystalline semiconductor thin film and is characterized in that it includes forming an amorphous semiconductor thin film on an insulated substrate, providing a single crystal semiconductor substrate primarily composed of the same material as that of the amorphous semiconductor thin film, including a catalytic metal on the surface thereof, putting the surface of the single crystal semiconductor substrate into contact with the amorphous semiconductor thin film, and performing a thermal process on the single crystal semiconductor substrate and amorphous semiconductor thin film in contact with each other at a temperature lower than the natural crystallizing temperature of the amorphous semiconductor thin film to crystallize the amorphous semiconductor thin film. With the present invention, a Si crystalline thin film having excellent crystal orientation is formed on an insulated substrate, and a TFT which is excellent in characteristics such as mobility is formed using such a Si crystalline thin film.
摘要翻译：本发明提供一种晶体半导体薄膜的制造方法，其特征在于，在绝缘基板上形成非晶半导体薄膜，提供主要由与非晶半导体薄片相同的材料构成的单晶半导体基板膜，其表面具有催化金属，使单晶半导体衬底的表面与非晶半导体薄膜接触，并且在单晶半导体衬底和非晶半导体薄膜上彼此接触进行热处理在比非晶半导体薄膜的自然结晶温度低的温度下使非晶半导体薄膜结晶。利用本发明，在绝缘基板上形成具有优异晶体取向性的Si结晶薄膜，并且使用这种Si晶体薄膜形成诸如迁移率特性优异的TFT。

48. 发明授权

US5311040A Thin film transistor with nitrogen concentration gradient 失效
标题翻译：具有氮浓度梯度的薄膜晶体管
公开(公告)号：US5311040A
公开(公告)日：1994-05-10
申请号：US070055
申请日：1993-06-01
申请人： Masato Hiramatsu , Takaaki Kamimura , Mitsuo Nakajima
发明人： Masato Hiramatsu , Takaaki Kamimura , Mitsuo Nakajima
IPC分类号： H01L21/20 , H01L29/45 , H01L29/78 , H01L29/786 , H01L29/04 , H01L29/167 , H01L29/36 , H01L29/76
CPC分类号： H01L29/458 , H01L29/7866
摘要： An inverted stagger thin film transistor includes an insulating substrate, a silicon active layer formed thereon, source and drain ohmic contact layers, source and drain electrodes respectively contacting the source and drain ohmic contact layers, and a gate electrode opposite to the channel region of the active layer through a gate insulating film. An auxiliary film consisting of a silicon film doped with nitrogen is formed in the surface of the active layer, and the ohmic contact layers contact the auxiliary film. The auxiliary film can be continuously formed from the active layer to the ohmic contact layers, thereby improving a junction state between the active layer and the ohmic contact layers.
摘要翻译：反相交错薄膜晶体管包括绝缘基板，形成在其上的硅有源层，源极和漏极欧姆接触层，分别接触源极和漏极欧姆接触层的源极和漏极，以及与漏极和漏极欧姆接触层相对的栅电极有源层通过栅极绝缘膜。在有源层的表面形成由掺杂有氮的硅膜构成的辅助膜，并且欧姆接触层与辅助膜接触。辅助膜可以从有源层连续地形成到欧姆接触层，从而改善有源层和欧姆接触层之间的连接状态。

49. 发明申请

US20110212001A1 PHASE MODULATION DEVICE, PHASE MODULATION DEVICE FABRICATION METHOD, CRYSTALLIZATION APPARATUS, AND CRYSTALLIZATION METHOD 审中-公开
公开(公告)号：US20110212001A1
公开(公告)日：2011-09-01
申请号：US13102716
申请日：2011-05-06
申请人： Hiroyuki OGAWA , Masato Hiramatsu
发明人： Hiroyuki OGAWA , Masato Hiramatsu
IPC分类号： B01D9/00
CPC分类号： G02B26/06 , B23K26/066 , G02B5/1857 , G02B5/1871 , G03F1/34 , H01L21/02422 , H01L21/02532 , H01L21/0268 , H01L21/02686
摘要： A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting substrate and modules the phase of incident light. A light-shielding portion which shields light in the peripheral portion where the optical intensity distribution decreases of the phase modulator is formed on the laser beam incident surface or exit surface of the phase shifter, thereby shielding the peripheral light in the irradiation surface of the incident laser beam.

50. 发明授权

US07352002B2 Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same 有权
标题翻译：包括具有不同结晶度的半导体薄膜的半导体器件及其制造方法及其制造方法及其制造方法
公开(公告)号：US07352002B2
公开(公告)日：2008-04-01
申请号：US11403938
申请日：2006-04-14
申请人： Yoshinobu Kimura , Masakiyo Matsumura , Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Fumiki Nakano
发明人： Yoshinobu Kimura , Masakiyo Matsumura , Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Fumiki Nakano
IPC分类号： H01L29/04
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L29/66757 , H01L29/78675
摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.
摘要翻译：制造薄膜半导体器件衬底的方法包括在基底层上形成非单晶半导体薄膜的步骤和用能量束照射非单晶半导体薄膜以提高结晶度的退火步骤构成非单晶半导体薄膜的非单晶半导体。退火步骤包括同时用多个能量束照射非单晶半导体薄膜，以形成多个单位区域，每个单位区域包括至少一个被能量束照射的照射区域和至少一个不照射的非照射区域用能量束照射。

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