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1. 发明授权

US09899419B2 Semiconductor device and semiconductor device production system 有权
公开(公告)号：US09899419B2
公开(公告)日：2018-02-20
申请号：US14924100
申请日：2015-10-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： H01L29/786 , H01L27/12 , H01L21/3213 , H01L21/02 , B23K26/073 , H01L21/20 , H01L21/84 , H01L29/66
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

2. 发明授权

US09777397B2 Continuous sapphire growth 有权
公开(公告)号：US09777397B2
公开(公告)日：2017-10-03
申请号：US13631602
申请日：2012-09-28
申请人： Apple Inc.
发明人： Dale N. Memering , Scott A. Myers
IPC分类号： C30B15/34 , C30B29/20 , C30B15/00 , C30B15/30 , C30B33/06
CPC分类号： C30B15/34 , C30B15/002 , C30B15/005 , C30B15/30 , C30B29/20 , C30B33/06 , Y10T117/1004 , Y10T117/1032 , Y10T117/106 , Y10T225/12
摘要： Systems and methods for continuous sapphire growth are disclosed. One embodiment may take the form of a method including feeding a base material into a crucible located within a growth chamber, heating the crucible to melt the base material and initiating crystalline growth in the melted base material to create a crystal structure. Additionally, the method includes pulling the crystal structure away from crucible and feeding the crystal structure out of the growth chamber.

3. 发明授权

US09761365B2 RF choke for gas delivery to an RF driven electrode in a plasma processing apparatus 有权
公开(公告)号：US09761365B2
公开(公告)日：2017-09-12
申请号：US14249459
申请日：2014-04-10
申请人： Applied Materials, Inc.
发明人： Jozef Kudela , Carl A. Sorensen , John M. White
IPC分类号： H05H1/46 , H01F17/06 , C23C16/455 , H01J37/32 , C23C16/505 , H01F27/08
CPC分类号： H01F17/06 , C23C16/455 , C23C16/505 , H01F27/08 , H01F2017/065 , H01J37/32082 , H01J37/3244 , H01J2237/0206 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

4. 发明授权

US09657407B2 Cantilever device for extending capacity of a scale used in a crystal growth apparatus 有权
公开(公告)号：US09657407B2
公开(公告)日：2017-05-23
申请号：US14522640
申请日：2014-10-24
申请人： Siemens Medical Solutions USA, Inc.
发明人： Mark S. Andreaco , James L. Corbeil , Brant Quinton , Troy Marlar , Ronald Nutt
IPC分类号： C30B15/30 , C30B15/00 , C30B15/32 , C30B35/00 , C30B15/28 , C30B13/28 , C30B29/34
CPC分类号： C30B15/00 , C30B13/285 , C30B15/28 , C30B15/30 , C30B15/32 , C30B29/34 , C30B35/00 , Y10T117/1004
摘要： A cantilever device for extending capacity of a scale used in a crystal growth apparatus having a pulling head wherein upward movement of a support column in the pulling head decreases a weight measured by the scale. The device includes a horizontal arm having first and second brackets, wherein the first bracket is attached to the pulling head. The device also includes a plate that extends through openings in the first and second brackets, wherein the plate includes a contact end and a free end. Further, the device includes a flexible element attached between the arm and the plate to form a pivot to enable rotation of the plate. A load is positioned on the plate wherein the load causes rotation of the plate about the pivot to cause upward movement of the contact end to move the support column upward to decrease weight measured by the scale.

5. 发明授权

US09422637B2 System of controlling diameter of single crystal ingot and single crystal ingot growing apparatus including the same 有权
标题翻译：控制包括其的单晶锭和单晶锭生长装置的直径的系统
公开(公告)号：US09422637B2
公开(公告)日：2016-08-23
申请号：US13306973
申请日：2011-11-29
申请人： Young-Ho Hong , Se-Geun Ha , Yo-Han Jung
发明人： Young-Ho Hong , Se-Geun Ha , Yo-Han Jung
IPC分类号： C30B15/26 , C30B15/20 , C30B15/22
CPC分类号： C30B15/26 , C30B15/20 , C30B15/22 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024
摘要： Provides are a system of controlling a diameter of a single crystal ingot and a single crystal ingot growing apparatus including the same. The system of controlling a diameter of a single crystal ingot includes: a diameter measuring sensor measuring a diameter of a single crystal ingot; a Low-Pass Filter (LPF) removing short period noise from measured data from the diameter measuring sensor; and an Automatic Diameter Control (ADC) sensor controlling the diameter of the single crystal ingot through controlling of a pull speed by using data having the noise removed as current data.
摘要翻译：提供一种控制单晶锭的直径的系统和包括其的单晶锭生长装置。控制单晶锭直径的系统包括：测量单晶锭直径的直径测量传感器; 低通滤波器（LPF）从直径测量传感器的测量数据中消除短周期噪声; 以及通过使用具有作为当前数据去除的噪声的数据来控制拉速来控制单晶锭直径的自动直径控制（ADC）传感器。

6. 发明授权

US09273411B2 Growth determination in the solidification of a crystalline material 有权
标题翻译：结晶材料凝固时的生长测定
公开(公告)号：US09273411B2
公开(公告)日：2016-03-01
申请号：US13667640
申请日：2012-11-02
申请人： GTAT Corporation
发明人： Edward P. Morris
IPC分类号： C30B11/00 , C30B29/06 , C30B29/20
CPC分类号： C30B11/006 , C30B29/06 , C30B29/20 , Y10T117/1004 , Y10T117/1008 , Y10T117/1092
摘要： A method for producing a crystalline material in a crucible in a crystal growth apparatus is disclosed. The method comprises, in part, the step of determining the amount of solidified material present in a partially solidified melt produced during the growth phase using at least one laser positioned at a height above the crucible. A crystal growth apparatus comprising the laser is also disclosed.
摘要翻译：公开了一种在晶体生长装置中制造坩埚中的结晶材料的方法。该方法部分地包括使用位于坩埚上方的高度处的至少一个激光来确定在生长阶段期间产生的部分固化的熔体中存在的凝固材料的量的步骤。还公开了一种包括该激光器的晶体生长装置。

7. 发明授权

US09234298B2 Method and apparatus for reducing impurities in a single crystal based on ingot length 有权
标题翻译：基于晶锭长度减少单晶杂质的方法和装置
公开(公告)号：US09234298B2
公开(公告)日：2016-01-12
申请号：US13650194
申请日：2012-10-12
申请人： Siemens Medical Solutions USA, Inc.
发明人： Keith Ritter
IPC分类号： C30B35/00 , C30B29/12 , C30B15/20 , C30B15/14
CPC分类号： C30B29/12 , C30B15/14 , C30B15/20 , C30B35/00 , Y10T117/1004 , Y10T117/1072
摘要： A method for growing a single crystal in a chamber. The method includes heating raw material to form a melt for forming the single crystal. A crystal seed is then inserted into the melt and pulled from the melt to form a partial ingot, wherein the partial ingot radiates heat. An amount of gas is then introduced into the chamber which corresponds to a size of the partial ingot so as to provide a constant crystallization rate.
摘要翻译：在室中生长单晶的方法。该方法包括加热原料以形成用于形成单晶的熔体。然后将晶种插入熔体中并从熔体中拉出以形成部分晶锭，其中部分晶锭辐射热量。然后将一定量的气体引入室中，其对应于部分锭的尺寸，以提供恒定的结晶速率。

8. 发明授权

US09200381B2 Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface 有权
标题翻译：通过管理种子界面的热应力来生产高质量的体积碳化硅单晶
公开(公告)号：US09200381B2
公开(公告)日：2015-12-01
申请号：US11249107
申请日：2005-10-12
申请人： Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
发明人： Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
IPC分类号： C30B23/06 , C30B29/36 , C30B23/00 , C30B33/00 , H01L21/324
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B33/00 , H01L21/324 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T428/21 , Y10T428/31
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
摘要翻译：公开了一种用于通过减少碳化硅晶种和种子保持器之间的分离直到在晶种和种子保持器之间的导电传热主导辐射的方式在种子生长系统中生产高质量的碳化硅块状单晶的方法晶种和种子保持器之间的基本上在种子保持器附近的整个晶种表面上的热传递。

9. 发明申请

US20150125717A1 METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (IN2O3) SINGLE CRYSTALS AND INDIUM OXIDE (IN203) SINGLE CRYSTAL 审中-公开
标题翻译：用于生长氧化铟（In2O3）单晶和氧化铟（IN203）单晶的方法和装置
公开(公告)号：US20150125717A1
公开(公告)日：2015-05-07
申请号：US14394858
申请日：2012-04-24
申请人： Zbigniew Galazka , Roberto Fornari , Reinhard Uecker
发明人： Zbigniew Galazka , Roberto Fornari , Reinhard Uecker
IPC分类号： C30B30/04 , C30B29/16 , H01F1/01 , C30B11/00
CPC分类号： C30B30/04 , C30B11/00 , C30B11/002 , C30B11/003 , C30B11/007 , C30B11/14 , C30B15/00 , C30B29/16 , H01F1/01 , Y10T117/1004
摘要： A method and apparatus for growing truly bulk In2O3 single crystals from the melt, as well as melt-grown bulk In2O3 single crystals are disclosed. The growth method comprises a controlled decomposition of initially non-conducting In2O3 starting material (23) during heating-up of a noble metal crucible (4) containing the In2O3 starting material (23) and thus increasing electrical conductivity of the In2O3 starting material with rising temperature, which is sufficient to couple with an electromagnetic field of an induction coil (6) through the crucible wall (24) around melting point of In2O3. Such coupling leads to an electromagnetic levitation of at least a portion (23.1) of the liquid In2O3 starting material with a neck (26) formation acting as crystallization seed. During cooling down of the noble metal crucible (4) with the liquid In2O3 starting material at least one bulk In2O3 single crystal (28.1, 28.2) is formed. We named this novel crystal growth method the “Levitation-Assisted Self-Seeding Crystal Growth Method”. The apparatus for growing bulk In2O3 single crystals from the melt comprises an inductively heated thermal system with a noble metal crucible (4) and evacuation passages (22, 22.1) for gaseous decomposition products of In2O3, while keeping very low temperature gradients. Various configurations of the induction coil (6), the noble metal crucible (4) and a lid (12) covering the crucible can be utilized to obtain very low temperature gradients, sufficient evacuation passages and a high levitation force. The electrical properties of the melt grown In2O3 single crystals can be modified in a wide range by at least one heat treatment in suitable atmospheres and appropriate temperatures.
摘要翻译：公开了一种用于从熔体中生长真正体积的In 2 O 3单晶以及熔融生长的本体In 2 O 3单晶的方法和装置。生长方法包括在含有In 2 O 3起始材料（23）的贵金属坩埚（4）的加热期间初始不导电的In 2 O 3原料（23）的受控分解，从而增加In 2 O 3起始材料的电导率随着上升温度足以与感应线圈（6）的电磁场通过坩埚壁（24）在In 2 O 3的熔点附近耦合。这种耦合导致液体In 2 O 3起始材料的至少一部分（23.1）的电磁悬浮，其中颈部（26）形成作为结晶种子。在使用液体In 2 O 3起始材料冷却贵金属坩埚（4）时，形成至少一个体积的In 2 O 3单晶（28.1,28.2）。我们将这种新型晶体生长方法命名为“悬浮辅助自种晶体生长法”。用于从熔体生长大块In2O3单晶的装置包括用于惰性金属坩埚（4）的感应加热热系统和用于In 2 O 3气态分解产物的排气通道（22,22.1），同时保持非常低的温度梯度。可以利用感应线圈（6），贵金属坩埚（4）和覆盖坩埚的盖（12）的各种构造来获得非常低的温度梯度，足够的排气通道和高悬浮力。熔体生长的In 2 O 3单晶的电性能可以在适当的气氛和合适的温度下通过至少一种热处理在宽范围内进行改性。

10. 发明申请

US20150114283A1 Cantilever Device For Extending Capacity Of A Scale Used In A Crystal Growth Apparatus 有权
标题翻译：用于扩展水晶生长装置中使用的秤的悬臂装置
公开(公告)号：US20150114283A1
公开(公告)日：2015-04-30
申请号：US14522640
申请日：2014-10-24
申请人： Siemens Medical Solutions USA, Inc.
发明人： Mark S. Andreaco , James L. Corbeil , Brant Quinton , Troy Marlar , Ronald Nutt
IPC分类号： C30B15/00 , C30B15/30
CPC分类号： C30B15/00 , C30B13/285 , C30B15/28 , C30B15/30 , C30B15/32 , C30B29/34 , C30B35/00 , Y10T117/1004
摘要： A cantilever device for extending capacity of a scale used in a crystal growth apparatus having a pulling head wherein upward movement of a support column in the pulling head decreases a weight measured by the scale. The device includes a horizontal arm having first and second brackets, wherein the first bracket is attached to the pulling head. The device also includes a plate that extends through openings in the first and second brackets, wherein the plate includes a contact end and a free end. Further, the device includes a flexible element attached between the arm and the plate to form a pivot to enable rotation of the plate. A load is positioned on the plate wherein the load causes rotation of the plate about the pivot to cause upward movement of the contact end to move the support column upward to decrease weight measured by the scale.
摘要翻译：一种悬臂装置，用于扩展在具有拉头的晶体生长装置中使用的刻度尺的容量，其中支撑柱在拉头中的向上运动降低了由刻度测量的重量。该装置包括具有第一和第二支架的水平臂，其中第一支架附接到拉头。该装置还包括延伸穿过第一和第二支架中的开口的板，其中板包括接触端和自由端。此外，该装置包括附接在臂和板之间的柔性元件，以形成能够使板旋转的枢轴。负载定位在板上，其中负载引起板绕枢轴的旋转，以引起接触端的向上运动，以向上移动支撑柱，以减小由刻度尺测量的重量。

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