专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10066315B2 Single crystal growing apparatus 有权
公开(公告)号：US10066315B2
公开(公告)日：2018-09-04
申请号：US15100597
申请日：2014-11-19
申请人： SK SILTRON CO., LTD.
发明人： In Sik Bang , Cheol Hwan Kim
IPC分类号： C30B17/00 , C30B15/14 , C30B35/00 , C30B15/20 , C30B29/20 , C30B11/00
CPC分类号： C30B17/00 , C30B11/006 , C30B15/14 , C30B15/20 , C30B29/20 , C30B35/00 , Y10T117/1004 , Y10T117/1008
摘要： An embodiment comprises: a chamber; a crucible provided in the chamber and accommodating a molten liquid which is a raw material for single crystal growth; a crucible screen disposed on the upper end of the crucible; and a moving unit for raising or lowering the crucible screen, wherein the crucible screen and a first upper adiabatic unit are raised to control the stroke distance, thereby preventing the impossibility of a lift-off process caused by a shortage of the stroke distance and the generation of cracks in single crystals.

2. 发明申请

US20170327946A1 RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：US20170327946A1
公开(公告)日：2017-11-16
申请号：US15668064
申请日：2017-08-03
申请人： Applied Materials, Inc.
发明人： Jozef KUDELA , Carl A. SORENSEN , John M. WHITE
IPC分类号： C23C16/455 , C23C16/505
CPC分类号： H01F17/06 , C23C16/455 , C23C16/505 , H01F27/08 , H01F2017/065 , H01J37/32082 , H01J37/3244 , H01J2237/0206 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

3. 发明申请

US20170186937A1 SYSTEM AND FABRICATION METHOD OF PIEZOELECTRIC STACK THAT REDUCES DRIVING VOLTAGE AND CLAMPING EFFECT 审中-公开
公开(公告)号：US20170186937A1
公开(公告)日：2017-06-29
申请号：US15308819
申请日：2015-05-06
申请人： CTG Advanced Materials, LLC
发明人： Pengdi Han , Jian Tian , Stephen Dynan , Brandon Stone
IPC分类号： H01L41/083 , H01L41/047 , H01L41/277 , H01L41/18 , H01L41/09
CPC分类号： H01L41/083 , C30B11/001 , C30B11/08 , C30B29/22 , C30B35/00 , H01L41/18 , H01L41/277 , Y10T117/10 , Y10T117/1008 , Y10T117/1024 , Y10T117/1076 , Y10T117/108 , Y10T117/1092
摘要： A system and method provides a piezoelectric stack arrangement for reduced driving voltage while maintaining a driving level for active piezoelectric materials. A stack arrangement of d36 shear mode single crystals of both air X-cut and Y-cut ±1:45° (±20°) arrangement are bonded with discrete conductive pillars to form a shear crystal stack. The bonding area between the neighboring crystal parts is minimized. The bonding pillars are positioned at less than a total surface are of the single crystal forming the stack. The stack fabrication is facilitated with a precision assembly system, where crystal parts are placed to desired locations on an assembly fixture for alignment following the preset operation steps. With the reduced clamping effect from bonding due to lower surface coverage of the discrete conductive pillars, such a piezoelectric d36 shear crystal stack exhibits a reduced driving voltage while maintaining a driving level and substantial and surprisingly improved performance.

4. 发明申请

US20160111451A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM 审中-公开
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US20160111451A1
公开(公告)日：2016-04-21
申请号：US14924100
申请日：2015-10-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

5. 发明授权

US09284660B2 Apparatus of producing silicon single crystal and method of producing silicon single crystal 有权
标题翻译：硅单晶的制造装置及其制造方法
公开(公告)号：US09284660B2
公开(公告)日：2016-03-15
申请号：US13314503
申请日：2011-12-08
申请人： Keiichi Takanashi , Ken Hamada
发明人： Keiichi Takanashi , Ken Hamada
IPC分类号： C30B29/06 , C30B15/26
CPC分类号： C30B15/26 , C30B29/06 , Y10T117/1008
摘要： An apparatus of producing a silicon single crystal including: an imaging device; a heat shield that has a circular opening; a first operation unit that operates the imaging device and takes a real image of the heat shield and a mirror image of the heat shield reflected on a surface of the silicon melt, measures a spacing between the real image and the mirror image, and calculates a position of a melt-surface; a second operating unit that operates the imaging device and takes an image of a bright-zone in the vicinity of the solid-liquid interface, and calculates a position of the melt-surface based on the image of the bright zone; and a controlling unit that refers a data of the position of the silicon melt obtained by the first operation unit and the second operation unit, and controls the position of the silicon melt.
摘要翻译：一种制造单晶硅的装置，包括：成像装置; 具有圆形开口的隔热罩; 第一操作单元，操作成像装置并获取热屏蔽的真实图像和在硅熔体的表面上反射的热屏蔽的镜像，测量实像和镜像之间的间隔，并计算出熔体表面的位置; 第二操作单元，其操作所述成像装置并拍摄所述固液界面附近的亮区图像，并且基于所述亮区的图像来计算所述熔体表面的位置; 以及控制单元，其参考由第一操作单元和第二操作单元获得的硅熔体的位置的数据，并控制硅熔体的位置。

6. 发明授权

US09260794B2 Crystal growth system and method for lead-contained compositions using batch auto-feeding 有权
公开(公告)号：US09260794B2
公开(公告)日：2016-02-16
申请号：US14266229
申请日：2014-04-30
申请人： CTG ADVANCED MATERIALS, LLC
发明人： Pengdi Han , Jian Tian
IPC分类号： C30B11/00 , C30B9/00 , C30B17/00 , C30B21/02 , C30B28/06 , C30B11/08 , C30B35/00 , C30B11/02 , C30B11/14 , C30B29/32
CPC分类号： C30B11/006 , C30B11/001 , C30B11/002 , C30B11/003 , C30B11/007 , C30B11/02 , C30B11/04 , C30B11/08 , C30B11/14 , C30B29/30 , C30B29/32 , C30B35/00 , H01L41/1875 , Y10T117/10 , Y10T117/1008 , Y10T117/1024 , Y10T117/1076 , Y10T117/108 , Y10T117/1092
摘要： This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

7. 发明申请

US20150361578A1 SYSTEM AND METHOD FOR FORMING A SILICON WAFER 审中-公开
标题翻译：用于形成硅波的系统和方法
公开(公告)号：US20150361578A1
公开(公告)日：2015-12-17
申请号：US14306688
申请日：2014-06-17
申请人： Energy Materials Research, LLC
发明人： Carl E. Bleil
IPC分类号： C30B15/20 , C30B29/06 , C30B15/16
CPC分类号： C30B29/06 , C30B15/002 , C30B15/14 , Y10T117/1008
摘要： An apparatus for the continuously forming a crystalline ribbon from molten silicon is introduced. A heater is provided including a pair of spaced planar electrodes parallel to the surface of the molten silicon for capacitively coupling radio frequency electrical currents into the material causing a ribbon of material to melt along a zone. A conductive electrode in thermal contact with a respective cooler and a dielectric layer between the conductive and semi-conductive electrodes is provided. A closeable transfer lock defining a chamber configured to accept a portion of the crystalline ribbon is used to transport a portion of the crystalline ribbon out of apparatus while recycling inert gas used in the system.
摘要翻译：引入用于从熔融硅连续形成结晶带的装置。提供加热器，其包括平行于熔融硅表面的一对隔开的平面电极，用于将射频电流电容耦合到材料中，使得材料带沿着区域熔化。提供与导电和半导电电极之间的相应冷却器和电介质层热接触的导电电极。限定被配置成接纳一部分结晶带的腔室的可密封的传递锁用于将一部分结晶带输出设备，同时回收系统中使用的惰性气体。

8. 发明授权

US09178069B2 Semiconductor device and semiconductor device production system 有权
公开(公告)号：US09178069B2
公开(公告)日：2015-11-03
申请号：US12533401
申请日：2009-07-31
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： H01L21/268 , H01L29/786 , H01L21/3213 , H01L21/02 , B23K26/073 , H01L21/20 , H01L21/84 , H01L29/66 , H01L27/12
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

9. 发明授权

US09057146B2 Eddy current thickness measurement apparatus 有权
标题翻译：涡流厚度测量仪
公开(公告)号：US09057146B2
公开(公告)日：2015-06-16
申请号：US12862187
申请日：2010-08-24
申请人： Gary J. Rosen , Frank Sinclair , Alexander Soskov , James S. Buff
发明人： Gary J. Rosen , Frank Sinclair , Alexander Soskov , James S. Buff
IPC分类号： B22D46/00 , B22D21/00 , G01B7/06 , B22D2/00 , C30B11/00 , B22D11/12 , B22D11/14 , C30B15/00 , C30B29/06 , C30B35/00 , C30B29/64 , C30B29/08 , C30B29/40 , C30B29/36
CPC分类号： C30B11/00 , B22D11/1206 , B22D11/143 , C30B15/00 , C30B29/06 , C30B29/08 , C30B29/36 , C30B29/406 , C30B29/64 , C30B35/00 , G01B7/105 , G01B7/107 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1044 , Y10T117/1048 , Y10T117/1068 , Y10T117/1088
摘要： A sheet of a material is disposed in a melt of the material. The sheet is formed using a cooling plate in one instance. An exciting coil and sensing coil are positioned downstream of the cooling plate. The exciting coil and sensing coil use eddy currents to determine a thickness of the solid sheet on top of the melt.
摘要翻译：将一片材料设置在材料的熔体中。在一种情况下，使用冷却板形成片材。励磁线圈和传感线圈位于冷却板的下游。励磁线圈和感测线圈使用涡流来确定熔体顶部的固体片的厚度。

10. 发明授权

US08887650B2 Temperature-controlled purge gate valve for chemical vapor deposition chamber 有权
标题翻译：用于化学气相沉积室的温度控制清洗闸阀
公开(公告)号：US08887650B2
公开(公告)日：2014-11-18
申请号：US13966921
申请日：2013-08-14
申请人： Soitec
发明人： Chantal Arena , Christiaan Werkhoven
IPC分类号： C30B23/00 , C30B28/06 , C30B25/14 , C23C16/30 , C23C16/44 , C23C16/48 , C23C16/54 , C30B29/40 , H01L21/02
CPC分类号： C30B25/14 , C23C16/303 , C23C16/4401 , C23C16/4412 , C23C16/481 , C23C16/54 , C30B29/403 , H01L21/0254 , H01L21/0262 , Y10T117/10 , Y10T117/1008
摘要： The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.
摘要翻译：本发明涉及为生产III-N（氮）化合物半导体晶片而专门用于生产GaN晶片的方法和装置。具体地说，这些方法涉及基本上防止在化学气相沉积（CVD）反应器内的隔离阀装置上形成不需要的材料。特别地，本发明提供了用于限制用于系统中的隔离阀上的GaCl 3和反应副产物的沉积/冷凝的装置和方法，以及通过使一定量的气态反应形成单晶III-V族半导体材料的方法 III族前体作为一种反应物，一定量的气态V族组分作为反应室中的另一反应物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式