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41. 发明申请

US20110103128A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20110103128A1
公开(公告)日：2011-05-05
申请号：US12882685
申请日：2010-09-15
申请人： Hiroshi Kanno , Reika Ichihara , Takayuki Tsukamoto , Kenichi Murooka , Hirofumi Inoue
发明人： Hiroshi Kanno , Reika Ichihara , Takayuki Tsukamoto , Kenichi Murooka , Hirofumi Inoue
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C7/02 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0064 , G11C13/0097 , G11C2213/31 , G11C2213/71 , G11C2213/72
摘要： Nonvolatile semiconductor memory device of an embodiment includes: a memory cell array including a plurality of first and second lines intersecting each other and plural memory cells provided at intersections of the first and second lines and having data written and erased upon application of voltages of the same polarity; and a writing circuit configured to select first and second lines and supply a set or reset pulse to the memory cell through the selected first and second lines. In an erase operation, the writing circuit repeatedly supplies the reset pulse to a selected memory cell until data is erased, by increasing or decreasing voltage level and voltage application time of the reset pulse within a reset region. The reset region, or an aggregate of combinations of voltage level and voltage application time of the reset pulse, is a region where voltage level and voltage application time are negatively correlated.
摘要翻译：一个实施例的非易失性半导体存储器件包括：存储单元阵列，包括彼此相交的多个第一和第二线，以及设置在第一和第二线的交点处的多个存储单元，并且在施加相同的电压时写入和擦除数据极性; 以及写入电路，被配置为选择第一和第二行，并且通过所选择的第一和第二行向存储器单元提供置位或复位脉冲。在擦除操作中，写入电路通过增加或减小复位区域内的复位脉冲的电压电平和电压施加时间，将复位脉冲重复地提供给所选择的存储单元，直到数据被擦除。复位区域或复位脉冲的电压电平和电压施加时间的组合的总和是电压电平和电压施加时间呈负相关的区域。

42. 发明授权

US07706171B2 Storage device 失效
标题翻译：储存设备
公开(公告)号：US07706171B2
公开(公告)日：2010-04-27
申请号：US11837097
申请日：2007-08-10
申请人： Kenichi Murooka
发明人： Kenichi Murooka
IPC分类号： G11C11/00
CPC分类号： G11C23/00 , G11C2213/71 , G11C2213/77
摘要： The present invention provides a storage device including a first electrode, a plurality of second electrodes arranged opposite the first electrode across a gap, and a particle which is selectively placed in one of the gaps between the first electrode and the second electrodes and which is movable between the first electrode and the second electrode and between the adjacent second electrodes. A stored state is determined utilizing the presence of the particle.
摘要翻译：本发明提供了一种存储装置，其包括第一电极，跨越间隙与第一电极相对布置的多个第二电极和选择性地放置在第一电极和第二电极之间的间隙之一中并且可移动的在第一电极和第二电极之间以及相邻的第二电极之间。使用颗粒的存在来确定存储状态。

43. 发明授权

US07638382B2 Storage apparatus and manufacturing method thereof 失效
标题翻译：储存装置及其制造方法
公开(公告)号：US07638382B2
公开(公告)日：2009-12-29
申请号：US11501897
申请日：2006-08-10
申请人： Kenichi Murooka , Toshiro Hiraoka
发明人： Kenichi Murooka , Toshiro Hiraoka
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： G11C11/22 , G11C11/221 , G11C23/00
摘要： A method of manufacturing a storage apparatus includes preparing a first substrate on which a plurality of row lines are arranged in parallel, preparing a second substrate on which a plurality of column lines are arranged in parallel, dispensing as a droplet a solution, in which particles are dispersed in a solvent, from a solution supply port to which an electric field is applied, toward a surface of the first substrate or a surface of the second substrate, and arranging the surfaces of the first and second substrates to face each other with a gap such that the column lines cross the row lines, thereby making the particles at crossing portions to be movable between the row lines and the column lines facing each other and between the crossing portions adjacent to each other.
摘要翻译：一种存储装置的制造方法，其特征在于，准备并列配置有多条行线的第一基板，准备并列配置有多条列线的第二基板，以液滴的形式配置粒子从施加有电场的溶液供给口朝向第一基板的表面或第二基板的表面分散在溶剂中，并且使第一基板和第二基板的表面彼此面对间隙，使得列线与行线交叉，从而使得交叉部分处的粒子能够在彼此相对的行线和列线之间以及彼此相邻的交叉部分之间移动。

44. 发明授权

US07569879B2 Nonvolatile semiconductor memory device and manufacturing method thereof 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US07569879B2
公开(公告)日：2009-08-04
申请号：US11699334
申请日：2007-01-30
申请人： Atsuhiro Kinoshita , Riichiro Shirota , Hiroshi Watanabe , Kenichi Murooka , Junji Koga
发明人： Atsuhiro Kinoshita , Riichiro Shirota , Hiroshi Watanabe , Kenichi Murooka , Junji Koga
IPC分类号： H01L29/788
CPC分类号： H01L27/115 , H01L27/11556 , H01L27/11568
摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate, plural semiconductor columns arranged in a matrix form on the substrate, plural first conductive areas zonally formed in a column direction on the substrate between the semiconductor columns and functioning as word lines, plural second conductive areas formed at tops of the semiconductor columns, respectively, plural bit lines connecting the second conductive areas in a row direction, plural channel areas respectively formed in the semiconductor columns between the first and second conductive areas and contacting the first and second conductive areas, plural third conductive areas continuously formed via first insulating films above the substrate and opposite to the channel areas in the column direction between the semiconductor columns and functioning as control gates, and plural charge accumulation areas respectively formed via second insulating films at upper portions of the channel areas at a position higher than the third conductive areas.
摘要翻译：非易失性半导体存储器件包括：半导体衬底，以矩阵形式布置在衬底上的多个半导体柱，在半导体柱之间的衬底上的列方向上分区形成的多个第一导电区域，并且用作字线，形成多个第二导电区域在半导体柱的顶部分别分别连接在行方向上的第二导电区域的多个位线，分别形成在第一和第二导电区域之间的半导体柱中并与第一和第二导电区域接触的多个沟道区域，多个第三导电通过基板上方的第一绝缘膜连续形成的区域，并且与半导体柱之间的列方向上的沟道区域相对，并且用作控制栅极，以及分别在沟道区域的上部经由第二绝缘膜形成的多个电荷累积区域位置高她比第三个导电区域。

45. 发明申请

US20050275617A1 Storage device 有权
标题翻译：储存设备
公开(公告)号：US20050275617A1
公开(公告)日：2005-12-15
申请号：US11147323
申请日：2005-06-08
申请人： Kenichi Murooka
发明人： Kenichi Murooka
IPC分类号： H01L27/10 , G09G3/34
CPC分类号： G11C23/00 , G11C2213/71 , G11C2213/77
摘要： The present invention provides a storage device including a first electrode, a plurality of second electrodes arranged opposite the first electrode across a gap, and a particle which is selectively placed in one of the gaps between the first electrode and the second electrodes and which is movable between the first electrode and the second electrode and between the adjacent second electrodes. A stored state is determined utilizing the presence of the particle.
摘要翻译：本发明提供了一种存储装置，其包括第一电极，跨越间隙与第一电极相对布置的多个第二电极和选择性地放置在第一电极和第二电极之间的间隙之一中并且可移动的在第一电极和第二电极之间以及相邻的第二电极之间。使用颗粒的存在来确定存储状态。

46. 发明授权

US06366639B1 X-ray mask, method of manufacturing the same, and X-ray exposure method 失效
标题翻译： X射线掩模，其制造方法和X射线曝光方法
公开(公告)号：US06366639B1
公开(公告)日：2002-04-02
申请号：US09337399
申请日：1999-06-22
申请人： Mizunori Ezaki , Kenichi Murooka
发明人： Mizunori Ezaki , Kenichi Murooka
IPC分类号： G21K500
CPC分类号： G03F1/22 , G03F7/2039
摘要： In an X-ray exposure method of this invention, an X-ray mask unit in which a patterned X-ray absorber is formed on a membrane is supported. This patterned X-ray absorber contains one of an element having a density/atomic weight of 0.085 [g/cm3] or more and an L-shell absorption edge at a wavelength of 0.75 to 1.6 nm and an element having a density/atomic weight of 0.04 [g/cm3] or more and an M-shell absorption edge at a wavelength of 0.75 to 1.6 nm. Synchrotron radiation having maximum light intensity at a wavelength of 0.6 to 1 nm is applied onto the X-ray mask unit. This improves the exposure accuracy in X-ray exposure.
摘要翻译：在本发明的X射线曝光方法中，支撑在膜上形成图案化X射线吸收体的X射线掩模单元。该图案化X射线吸收体含有密度/原子量为0.085 [g / cm 3]以上的元素和波长为0.75〜1.6nm的L壳吸收边缘和具有密度/原子量的元素为0.04 [g / cm 3]以上，M波长为0.75〜1.6nm的M-壳吸收边。将在波长0.6〜1nm处具有最大光强度的同步辐射施加到X射线掩模单元上。这提高了X射线曝光中的曝光精度。

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