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41. 发明申请

US20050094319A1 Two-piece magnetic shield having improved heat dissipation 有权
标题翻译：具有改善散热性能的两件式磁屏蔽
公开(公告)号：US20050094319A1
公开(公告)日：2005-05-05
申请号：US10696431
申请日：2003-10-29
申请人： Cherng-Chyi Han , Rod Lee , Mao-Min Chen , Pokang Wang
发明人： Cherng-Chyi Han , Rod Lee , Mao-Min Chen , Pokang Wang
IPC分类号： G11B5/127 , G11B5/31 , G11B5/33
CPC分类号： G11B5/3136 , G11B5/3133 , Y10T29/49039 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Problems such as thermal pole tip protrusion result from thermal mismatch between the alumina and pole material during the writing process. This, and similar problems due to inadequate heat dissipation, have been overcome by dividing the bottom shield into two pieces both of which sit on top of a non-magnetic heat sink. Heat generated by the coil during writing is transferred to the non-magnetic heat sink whence it gets transferred to the substrate. With this approach, the head not only benefits from less field disturbance due to the small shield but also improves heat dissipation from the additional heat sink
摘要翻译：在写入过程中，由于氧化铝和极材料之间的热失配，导致热极尖突出的问题。通过将底部屏蔽分成两个位于非磁性散热器顶部的两个部件，已经克服了由于不充分散热引起的这种和类似的问题。在写入期间由线圈产生的热量被传递到非磁性散热器，因为它被传送到基板。采用这种方法，由于小屏蔽，头部不但受益于较少的场干扰，还可以改善附加散热器的散热

42. 发明授权

US06583966B2 Method to make a high data rate stitched writer for a giant magneto-resistive head 失效
标题翻译：为巨型磁阻头制作高数据速率缝合笔记的方法
公开(公告)号：US06583966B2
公开(公告)日：2003-06-24
申请号：US09956360
申请日：2001-09-20
申请人： Cherng-Chyi Han , Chyu Jiuh Torng , Mao-Min Chen
发明人： Cherng-Chyi Han , Chyu Jiuh Torng , Mao-Min Chen
IPC分类号： G11B5139
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3146 , G11B5/3163 , G11B5/3967 , G11B2005/3996 , Y10T29/49021 , Y10T29/49025 , Y10T29/49032
摘要： A high data-rate stitched pole magnetic read/write-head combining sputtered and plated high magnetic moment materials and a method for fabricating same. The plating and stitching aspects of this fabrication allow the formation of a very narrow write-head, while the sputtering permits the use of high magnetic moment materials having high resistivity and low coercivity.
摘要翻译：组合溅射和电镀高磁矩材料的高数据速率缝合磁极读/写头及其制造方法。该制造的电镀和缝合方面允许形成非常窄的写入头，而溅射允许使用具有高电阻率和低矫顽力的高磁矩材料。

43. 发明授权

US06307721B1 Thin read gap magnetoresistive (MR) sensor element and method for fabrication thereof 有权
标题翻译：薄读磁隙（MR）传感元件及其制造方法
公开(公告)号：US06307721B1
公开(公告)日：2001-10-23
申请号：US09148558
申请日：1998-09-04
申请人： Mao-Min Chen , Cherng-Chyi Han , Cheng T. Horng
发明人： Mao-Min Chen , Cherng-Chyi Han , Cheng T. Horng
IPC分类号： G11B539
CPC分类号： G11B5/3954 , G11B5/3903
摘要： A magnetoresistive (MR) sensor element and a method for fabricating the magnetoresistive (MR) sensor element. There is first provided a substrate. There is then formed over the substrate a first shield layer. There is then formed upon the first shield layer a first dielectric spacer layer. There is then formed upon the first dielectric spacer layer a patterned magnetoresistive (MR) layer. There is then formed adjacent to and electrically communicating with a pair of opposite ends of the patterned magnetoresistive (MR) layer a pair of patterned conductor lead layers to define a trackwidth of the patterned magnetoresistive (MR) layer. There is then formed upon the pair of patterned conductor lead layers and upon the patterned magnetoresistive (MR) layer at the trackwidth of the patterned magnetoresistive (MR) layer a blanket second dielectric spacer layer. Finally, there is then formed upon the blanket second dielectric spacer layer a second shield layer, where a first thickness of the blanket second dielectric spacer layer separating a patterned conductor lead layer within the pair of patterned conductor lead layers from the second shield layer is greater than a second thickness of the blanket second dielectric spacer layer separating the patterned magnetoresistive (MR) layer from the second shield layer within the trackwidth of the patterned magnetoresistive (MR) layer. The method contemplates a magnetoresistive (MR) sensor element fabricated in accord with the method.
摘要翻译：磁阻（MR）传感器元件和制造磁阻（MR）传感器元件的方法。首先提供基板。然后在衬底上形成第一屏蔽层。然后在第一屏蔽层上形成第一电介质隔离层。然后在第一电介质隔离层上形成图案化磁阻（MR）层。然后形成为与图案化磁阻（MR）层的一对相对端相邻并与其电连通一对图案化的导体引线层，以限定图案化磁阻（MR）层的轨道宽度。然后形成在一对图案化导体引线层上，并且在图案化磁阻（MR）层的轨道宽度处的图案化磁阻（MR）层上形成毯式第二介电隔离层。最后，然后在第二绝缘间隔层上形成第二屏蔽层，其中第一厚度的第二绝缘隔离层将第一屏蔽层内的图案化导体引线层中的图案化导体引线层分离，比在图案化磁阻（MR）层的轨道宽度内将图案化磁阻（MR）层与第二屏蔽层分离的第二厚度的第二介电隔离层的厚度。该方法考虑了根据该方法制造的磁阻（MR）传感器元件。

44. 发明授权

US06287476B1 Electrochemical method to improve MR reader edge definition and device reliability 失效
标题翻译：电化学方法提高MR读取器边缘定义和器件可靠性
公开(公告)号：US06287476B1
公开(公告)日：2001-09-11
申请号：US09332429
申请日：1999-06-14
申请人： Kochan Ju , Shou-Chen Kao , Cherng-Chyi Han , Jei-Wei Chang , Mao-Min Chen
发明人： Kochan Ju , Shou-Chen Kao , Cherng-Chyi Han , Jei-Wei Chang , Mao-Min Chen
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/09 , G11B5/3106 , G11B5/3133 , G11B5/3903 , G11B5/40 , G11B2005/3996
摘要： A method to form a passivation layer using an electrochemical process over a MR Sensor so that the passivation layer defines the MR track width. The passivation layer is formed by anodizing the MR sensor. The passivation layer is an electrical insulator (preventing Sensor current (I) from shunting through the overspray) and a heat conductor to allow MR heat to dissipate away from the MR sensor through the overspray. The method comprises: forming a passivation layer on the MR sensor; the passivation layer formed using an electrochemical process. Then we spinning-on and printing a lift-off photoresist structure over the passivation layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure thereby defining a track width of the MR sensor. Then we deposit a lead layer over the passivation layer and MR sensor. The lift-off structure is removed where by the passivation layer defines a track width. The passivation layer is an electrical insulator that prevents sensor current (I) form shunting through overspray layers while allowing heat to dissipate through to the lead layer.
摘要翻译：使用MR传感器上的电化学过程形成钝化层的方法，使得钝化层限定MR磁道宽度。通过阳极氧化MR传感器形成钝化层。钝化层是电绝缘体（防止传感器电流（I）通过过喷）分流）和热导体，以允许MR热量通过过喷器散射离开MR传感器。该方法包括：在MR传感器上形成钝化层; 使用电化学工艺形成钝化层。然后我们旋转并在钝化层上印刷剥离光致抗蚀剂结构。蚀刻钝化层以除去未被剥离结构覆盖的钝化层，从而限定MR传感器的轨道宽度。然后我们在钝化层和MR传感器上沉积铅层。去除剥离结构，其中钝化层限定轨道宽度。钝化层是电绝缘体，其防止传感器电流（I）通过过喷层形成分流，同时允许热量散发到引线层。

45. 发明授权

US6103136A Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL) 失效
公开(公告)号：US6103136A
公开(公告)日：2000-08-15
申请号：US46007
申请日：1998-03-23
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju
IPC分类号： G01R33/09 , G11B5/39 , B44C1/22
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.

46. 发明授权

US6091589A Soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL) 失效
标题翻译：具有电绝缘软相邻层（SAL）的软相邻层（SAL）磁阻（MR）传感器元件
公开(公告)号：US6091589A
公开(公告)日：2000-07-18
申请号：US320756
申请日：1999-05-27
申请人： Cherng-Chyi Han , Mao-Min Chen , Chien-Li Lin , Kochan Ju , Cheng Tzong Horng
发明人： Cherng-Chyi Han , Mao-Min Chen , Chien-Li Lin , Kochan Ju , Cheng Tzong Horng
IPC分类号： G01R33/09 , G11B5/39 , G01B7/14
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B5/399 , G11B5/3932 , Y10T29/49044 , Y10T29/49046
摘要： Within a soft adjacent layer (SAL) magnetoresistive (MR) sensor element which may be employed within a magnetic head there is first employed a substrate. Formed over the substrate is a soft adjacent layer (SAL). In turn, formed upon the soft adjacent layer (SAL) is a dielectric layer. Finally, in turn, formed at least in part upon the dielectric layer is a magnetoresistive (MR) layer. Within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element the soft adjacent layer (SAL) and the dielectric layer are planar. In addition, within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element both an upper surface of the magnetoresistive (MR) layer and a lower interface of the magnetoresistive (MR) layer are non-planar.
摘要翻译：在可以在磁头内使用的软相邻层（SAL）磁阻（MR）传感器元件中，首先采用衬底。形成在衬底上的是软相邻层（SAL）。另外，形成在软相邻层（SAL）上的是电介质层。最后，至少部分地形成在电介质层上的是磁阻（MR）层。在软相邻层（SAL）磁阻（MR）传感器元件内，软相邻层（SAL）和电介质层是平面的。此外，在软相邻层（SAL）磁阻（MR）传感器元件内，磁阻（MR）层的上表面和磁阻（MR）层的下界面都是非平面的。

47. 发明授权

US6024886A Planarizing method for fabricating an inductive magnetic write head for high density magnetic recording 失效
标题翻译：用于制造用于高密度磁记录的感应磁写头的平面化方法
公开(公告)号：US6024886A
公开(公告)日：2000-02-15
申请号：US985648
申请日：1997-12-05
申请人： Cherng-Chyi Han , Yongchang Feng , Rodney E. Lee , Hui-Chuan Wang
发明人： Cherng-Chyi Han , Yongchang Feng , Rodney E. Lee , Hui-Chuan Wang
IPC分类号： G11B5/31 , G11B5/39 , B44C1/22
CPC分类号： G11B5/3967 , G11B5/3116 , G11B5/313 , G11B5/3163 , Y10T29/49032 , Y10T29/49048 , Y10T29/49052
摘要： Within a method for forming a magnetic transducer head there is first provided a substrate having formed thereover a lower magnetic pole layer in turn having formed thereupon a gap filling layer which is substantially planar. There is then formed upon the gap filling layer a patterned upper magnetic pole tip layer which serves as an etch mask layer for forming from the gap filling layer and the lower magnetic pole layer a patterned gap filling layer and an etched lower magnetic pole layer having a lower magnetic pole tip integral thereto, while simultaneously forming an etched patterned upper magnetic pole tip layer from the patterned upper magnetic pole tip layer. There is then formed upon the etched patterned upper magnetic pole tip layer and the etched lower magnetic pole layer a backfilling insulator layer to a thickness greater than a thickness of the etched patterned upper magnetic pole tip layer plus a thickness of the patterned gap filling layer plus a thickness of the lower magnetic pole tip. There is then planarized the backfilling insulator layer to form a patterned planarized backfilling insulator layer an exposed upper surface of which is coplanar with an exposed upper surface of the etched patterned upper magnetic pole tip layer. Finally, there is then formed a patterned upper magnetic pole layer contacting the exposed upper surface of the etched patterned upper magnetic pole tip layer.
摘要翻译：在用于形成磁换能器头的方法中，首先提供了一个在其上形成有下磁极层的衬底，其上形成有大致平坦的间隙填充层。然后在间隙填充层上形成图案化的上磁极尖端层，其用作用于从间隙填充层形成的蚀刻掩模层，并且下部磁极层形成图案化的间隙填充层和蚀刻的下部磁极层，该下部磁极层具有下部磁极尖端与其成一体，同时从图案化的上磁极尖端层形成蚀刻图案的上磁极尖端层。然后在蚀刻图案化的上磁极尖端层和蚀刻的下磁极层上形成厚度大于蚀刻图案的上磁极尖端层厚度加上图案化间隙填充层的厚度加上的回填绝缘体层下磁极尖端的厚度。然后平面化回填绝缘体层，以形成图案化的平坦化回填绝缘体层，其暴露的上表面与蚀刻图案化的上磁极尖端层的暴露的上表面共面。最后，然后形成图案化的上磁极层，其接触蚀刻图案化的上磁极尖端层的暴露的上表面。

48. 发明授权

US6003223A Common alignment target image field stitching method for step and repeat alignment in photoresist 失效
标题翻译：普通对准目标图像场拼接方法，用于光刻胶中的步进和重复对准
公开(公告)号：US6003223A
公开(公告)日：1999-12-21
申请号：US195650
申请日：1998-11-19
申请人： Jeffrey Paul Hagen , Cherng-Chyi Han , Jackie A. Franklin
发明人： Jeffrey Paul Hagen , Cherng-Chyi Han , Jackie A. Franklin
IPC分类号： G03F7/20 , G03F9/00 , G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： G03F9/7046 , G03F7/70433 , G03F7/70475 , G11B5/39 , G11B5/3903 , G11B5/3163 , Y10T29/49041
摘要： A method of for aligning step and repeat reticle images for 2 adjacent sliders for magnetoresistive (MR) devices. The invention forms 3 wafer alignment targets for two adjacent sliders . The 3 wafer alignment targets are used to align adjacent reticle exposure fields. An novel common alignment target is between the two sliders. The stepper alignment system uses the wafer alignment target placed in the field stitch area between two adjacent fields and the alignment target for that particular field to align the reticle. The method includes: forming (1) a first wafer alignment target in the first slider area; (2) a second wafer alignment target in the second slider area; and (3) a center wafer alignment target between the first and the second wafer alignment targets. Using a stepper, exposing the first slider area with the reticle image field. The first reticle image field having spaced first and second reticle alignment keys. The first alignment key is aligned with the first wafer alignment target and the second reticle alignment key is aligned with the center alignment target. Next, stepping and exposing the second slider area with a second reticle image field by aligning a first reticle alignment key with the center wafer alignment target and aligning the second reticle alignment key of the second reticle image field with the second wafer alignment target.
摘要翻译：一种用于对准用于磁阻（MR）器件的2个相邻滑块的步骤和重复标线图像的方法。本发明为两个相邻的滑块形成3个晶片对准目标。 3个晶片对准目标用于对准相邻的掩模版曝光场。两个滑块之间有一个新的共同对准目标。步进对准系统使用放置在两个相邻场之间的场迹区域中的晶片对准目标和该特定场的对准目标来对准该掩模版。该方法包括：在第一滑块区域中形成（1）第一晶片对准目标; （2）第二滑块区域中的第二晶片对准目标; 和（3）第一和第二晶片对准靶之间的中心晶片对准靶。使用步进器，将掩模版图像场曝光第一个滑块区域。第一掩模版图像场具有间隔开的第一和第二标线对准键。第一对准键与第一晶片对准靶对准，第二标线对准键与中心对准靶对准。接下来，通过将第一标线片对准键与中心晶片对准目标对准并将第二标线片图像场的第二标线图对准键与第二晶片对准目标对准，用第二标线图像场步进和曝光第二滑块区域。

49. 发明授权

US5985162A Method for forming soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL) 失效
标题翻译：用电绝缘软相邻层（SAL）形成软相邻层（SAL）磁阻（MR）传感器元件的方法
公开(公告)号：US5985162A
公开(公告)日：1999-11-16
申请号：US810059
申请日：1997-03-05
申请人： Cherng-Chyi Han , Mao-Min Chen , Kochan Ju
发明人： Cherng-Chyi Han , Mao-Min Chen , Kochan Ju
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/12 , B44C1/22
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3967 , H01L43/12 , G11B5/313 , G11B5/3163
摘要： A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is formed over the substrate a dielectric layer which has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer in contact with the first surface of the dielectric layer. Similarly, there is also formed over the substrate a soft adjacent layer (SAL) in contact with the second surface of the blanket dielectric layer, where the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the dielectric layer are planar and preferably at least substantially co-extensive. The invention contemplates the soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed through the method of the invention.
摘要翻译：软相邻层（SAL）磁阻（MR）传感器元件和用于制造软相邻层（SAL）磁阻（MR）传感器元件的方法。为了实践该方法，首先提供了一种衬底。在衬底上形成介电层，其具有电介质层的第一表面和与电介质层的第一表面相对的电介质层的第二表面。还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。类似地，还在衬底上形成与橡皮布介电层的第二表面接触的软相邻层（SAL），其中磁阻（MR）层，软相邻层（SAL）和电介质层是平面的，优选至少基本上共同扩展。本发明设想通过本发明的方法形成的软相邻层（SAL）磁阻（MR）传感器元件。

50. 发明授权

US08184399B2 Magnetic write head with thin and thick portions for balancing writability and ate 有权
标题翻译：磁性写头，薄而厚的部分，用于平衡书写和吃
公开(公告)号：US08184399B2
公开(公告)日：2012-05-22
申请号：US12924416
申请日：2010-09-27
申请人： Yan Wu , Moris Dovek , Zhigang Bai , Cherng-Chyi Han , Jiun-Ting Lee , Po-Kang Wang
发明人： Yan Wu , Moris Dovek , Zhigang Bai , Cherng-Chyi Han , Jiun-Ting Lee , Po-Kang Wang
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a tapered main pole having a variable thickness. The tapered portion of the pole is at the ABS tip and it can be formed by bevels at the leading or trailing edges or both. The taper terminates to form a region with a maximum thickness, t1, which extends for a certain distance proximally. Beyond this region of maximum thickness t1, the pole is then reduced to a constant minimum thickness t2. A yoke is attached to this region of constant minimum thickness. This pole design requires less flux because of the thinner region of the pole where it attaches to the yoke, but the thicker region just before the tapered ABS provides additional flux to drive the pole just before the ABS, so that high definition and field gain is achieved, yet fringing is significantly reduced.
摘要翻译：制造具有可变厚度的锥形主极的垂直磁记录（PMR）头。极的锥形部分在ABS尖端处，并且其可以由前缘或后缘处的斜面或两者形成。锥形终止形成最大厚度的区域t1，其向近处延伸一定距离。超过该最大厚度的区域t1，然后将极减小到恒定的最小厚度t2。磁轭连接到恒定最小厚度的区域。这个极设计需要更少的通量，因为它附着在磁轭上的磁极的较薄区域，而刚好在锥形ABS之前较厚的区域提供额外的磁通来驱动刚好在ABS之前的极点，因此高清晰度和场增益是实现了，但边缘明显减少。

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