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    • 6. 发明授权
    • Current perpendicular-to-the-plane structure spin valve magnetoresistive head
    • 当前垂直于平面结构的自旋阀磁阻头
    • US06781799B2
    • 2004-08-24
    • US09821185
    • 2001-03-29
    • Yoshihiko SeyamaAtsushi TanakaKeiichi NagasakaYutaka Shimizu
    • Yoshihiko SeyamaAtsushi TanakaKeiichi NagasakaYutaka Shimizu
    • G11B5127
    • B82Y25/00B82Y10/00G01R33/093G11B5/00G11B5/012G11B5/3903G11B5/3967H01F10/3254
    • A current perpendicular-to-the-plane (CPP) structure spin valve magnetoresistive (MR) transducer includes an insulating layer. A pinned or free ferromagnetic layer serves to space or isolate the insulating layer from a non-magnetic spacer layer interposed between the pinned and free ferromagnetic layers. The sensing current is allowed to penetrate through the insulating layer. Fine pin-holes generally formed in the insulating layer are supposed to enable migration of electrons through the insulating layer. Similar to the situation in which the sensing current is allowed to flow through a reduced sectional area, a larger variation can be obtained in response to the inversion of the magnetization in the free ferromagnetic layer. The spin valve MR transducer is expected to greatly contribute to realization of a still higher recording density. Moreover, the spin valve MR transducer is also expected to exhibit an electric resistance approximately equal to a tenth part of that of a well-known tunnel junction magnetoresistive (TMR) element. Accordingly, a thermal noise can significantly be suppressed in the spin valve MR transducer as compared with the TMR element.
    • 电流垂直于平面(CPP)结构的自旋阀磁阻(MR)传感器包括绝缘层。 被钉扎或自由的铁磁层用于将绝缘层与置于固定和自由铁磁层之间的非磁性间隔层隔离或隔离。 允许感测电流穿过绝缘层。 通常在绝缘层中形成的细针孔假设能使电子迁移通过绝缘层。 类似于允许感测电流流过减小的截面面积的情况,响应于自由铁磁层中的磁化的反转,可以获得更大的变化。 自旋阀MR换能器有望大大有助于实现更高的记录密度。 此外,自旋阀MR换能器也预期会呈现大约等于公知的隧道结磁阻(TMR)元件的电阻的十分之一的电阻。 因此,与TMR元件相比,自旋阀MR换能器可以显着地抑制热噪声。
    • 8. 发明授权
    • Ultra-short yoke and ultra-low stack height writer and method of fabrication
    • 超短磁轭和超低叠层高度写入器及其制造方法
    • US06765756B1
    • 2004-07-20
    • US09268088
    • 1999-03-12
    • Liubo HongRonald A. BarrDashun Steve Zhou
    • Liubo HongRonald A. BarrDashun Steve Zhou
    • G11B5127
    • G11B5/313G11B5/17G11B5/3116G11B5/3163
    • The present invention provides an improved thin film write head and method of fabrication capable of providing an ultra-short yoke and/or an ultra-low conductor winding stack. The present invention reduces yoke length and stack height by forming the conductor winding in a trench etched from an insulation layer, preferably formed of an inorganic insulation material. A thin resist mask is used to define the width of the trench while the etch process defines the depth. Preferably, the insulation layer is formed on a different inorganic insulation material to control the etch process, thus, the conductor winding may be formed on the underlying layer. The conductor winding preferably is formed by depositing conductor material so that it fills the trench and then planarizing, such as by chemical mechanical polish, to remove conductor material deposited outside the trench. An organic insulation layer, such as cured photoresist, may be deposited on the planarized surface of the conductor winding to insulate it from an overlying yoke. This overlying organic insulation layer may also define the apex angle of the head. The present invention may have multiple layers of conductor winding. The subsequent layers of conductor may be formed similar to the first layer, or may be formed with conventional photoresist processes and structures. The present invention may utilize any known pole structure or material.
    • 本发明提供了一种改进的薄膜写入头和制造方法,其能够提供超短磁轭和/或超低导体绕组。 本发明通过在绝缘层中蚀刻的沟槽中形成导体绕组,优选地由无机绝缘材料形成,来减小磁轭长度和堆叠高度。 当蚀刻工艺限定深度时,使用薄的抗蚀剂掩模来限定沟槽的宽度。 优选地,绝缘层形成在不同的无机绝缘材料上以控制蚀刻工艺,因此,导体绕组可以形成在下层上。 导体绕组优选地通过沉积导体材料形成,使得其填充沟槽,然后通过化学机械抛光来平坦化,以去除沉积在沟槽外部的导体材料。 可以在导体绕组的平坦化表面上沉积有机绝缘层,例如固化的光致抗蚀剂,以使其与上覆的轭绝缘。 该上覆的有机绝缘层也可以限定头部的顶角。 本发明可以具有多层导体绕组。 导体的后续层可以类似于第一层形成,或者可以用常规光刻胶工艺和结构形成。 本发明可以利用任何已知的极结构或材料。
    • 9. 发明授权
    • Spin-valve thin-film magnetic element suitable for track narrowing and thin-film magnetic head using the same
    • 适用于轨道变窄的旋转阀薄膜磁性元件及使用其的薄膜磁头
    • US06760200B2
    • 2004-07-06
    • US09989788
    • 2001-11-19
    • Naoya Hasegawa
    • Naoya Hasegawa
    • G11B5127
    • B82Y25/00B82Y10/00G11B5/3116G11B5/3903H01F10/3268H01F41/325
    • A spin-valve thin-film magnetic element includes a substrate, an antiferromagnetic layer, a pinned magnetic layer in contact with the antiferromagnetic layer, a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic conductive layer therebetween, a pair of hard bias layers, and a pair of electrode layers. The magnetic read track width Tw is set at 0.4 &mgr;m or less. At least a part of the free magnetic layer is composed of an NiFe alloy, the Ni content CNi in the NiFe alloy being in the range of 70.2 to 89.9 atomic percent, or the magnetostriction &lgr;s of the free magnetic layer is in the range of −7.0×10−6 to 2.0×10−5. A thin-film magnetic head using such a spin-valve thin-film magnetic head is also disclosed.
    • 自旋阀薄膜磁性元件包括基板,反铁磁层,与反铁磁层接触的钉扎磁性层,在其上具有非磁性导电层的钉扎磁性层上形成的自由磁性层,一对硬偏置 层和一对电极层。 磁读取宽度Tw设定为0.4mum以下。 自由磁性层的至少一部分由NiFe合金构成,NiFe合金中的Ni含量CNi在70.2〜89.9原子%的范围内,或者自由磁性层的磁致伸缩体的范围在 - 7.0×10 -6至2.0×10 -5。 还公开了一种使用这种自旋阀薄膜磁头的薄膜磁头。