专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US12044977B2 Multiple-mask multiple-exposure lithography and masks 有权
公开(公告)号：US12044977B2
公开(公告)日：2024-07-23
申请号：US18359447
申请日：2023-07-26
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Peter Yu , Chih-Tung Hsu , Kevin Wang , Chih-Chia Hu , Roger Chen
IPC分类号： G03F7/20 , G03F1/38 , G03F1/42 , G03F1/70 , G03F7/00
CPC分类号： G03F7/70475 , G03F1/38 , G03F1/42 , G03F1/70
摘要： Examples of a multiple-mask multiple-exposure lithographic technique and suitable masks are provided herein. In some examples, a photomask includes a die area and a stitching region disposed adjacent to the die area and along a boundary of the photomask. The stitching region includes a mask feature for forming an integrated circuit feature and an alignment mark for in-chip overlay measurement.

2. 发明授权

US11733606B2 Method for performing a manufacturing process and associated apparatuses 有权
公开(公告)号：US11733606B2
公开(公告)日：2023-08-22
申请号：US16972073
申请日：2019-04-29
申请人： ASML NETHERLANDS B.V.
发明人： Thomas Theeuwes , Koenraad Van Ingen Schenau , Pieter Joseph Marie Wöltgens
IPC分类号： G03F1/70 , G03F7/20 , G03F7/00
CPC分类号： G03F1/70 , G03F7/705 , G03F7/70283 , G03F7/70466 , G03F7/70475
摘要： A method for assigning features into at least first features and second features, the first features being for at least one first patterning device configured for use in a lithographic process to form corresponding first structures on a substrate and the second features being for at least one second patterning device configured for use in a lithographic process to form corresponding second structures on a substrate, wherein the method including assigning the features into the first features and the second features based on a patterning characteristic of the features.

3. 发明申请

US20190006552A1 METHOD OF MANUFACTURING PATTERNED SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
公开(公告)号：US20190006552A1
公开(公告)日：2019-01-03
申请号：US16020663
申请日：2018-06-27
申请人： NICHIA CORPORATION
发明人： Yuki KANAGAWA , Kei MURAKAMI
IPC分类号： H01L33/00 , H01L21/033 , H01L33/36
CPC分类号： H01L33/007 , G03F1/50 , G03F1/54 , G03F7/70475 , H01L21/0332 , H01L21/0337 , H01L33/36
摘要： A method of manufacturing a patterned substrate includes: providing an exposure mask, the exposure mask comprising: a plurality of inner light-shielding portions arranged in a lattice, a light-transmissive portion integrally connecting regions surrounding the plurality of inner light-shielding portions, and an outer light-shielding portion surrounding the light-transmissive portion; performing a plurality of exposures of a photoresist layer disposed on a substrate in a step-and-repeat-manner using the exposure mask, so as to form a plurality of inner projected parts corresponding to the inner light-shielding portions, the inner projected parts being aligned in a lattice as a whole; developing the photoresist layer on which the plurality of exposures have been performed; and etching the substrate using the developed photoresist layer as a mask; wherein, in the step of performing the plurality of exposures, a region corresponding to the light-transmissive portion formed by a predetermined one of the exposures and a region corresponding to the light-transmissive portion formed by another one of the exposures do not overlap each other on shortest straight lines connecting outermost inner projected parts formed by the predetermined exposure and respective inner projected parts formed by the another exposure that are located closest to the outermost inner projected parts of the predetermined exposure, while portions of the region corresponding to the light-transmissive portion formed by the predetermined exposure and portions of the region corresponding to the light-transmissive portion formed by the another exposure overlap each other in places other than the shortest straight lines.

4. 发明申请

US20180239239A1 PHOTOMASK FOR OPTICAL ALIGNMENT AND OPTICAL ALIGNMENT METHOD 审中-公开
公开(公告)号：US20180239239A1
公开(公告)日：2018-08-23
申请号：US15754502
申请日：2015-10-12
申请人： SHENZHEN CHINA STAR OPTOELECTRONIC TECHNOLOGY CO., LTD.
发明人： Bing HAN
IPC分类号： G03F1/42 , G02F1/1337 , G03F7/20
CPC分类号： G03F1/42 , B05B12/20 , G02F1/133788 , G03F1/00 , G03F1/36 , G03F7/20 , G03F7/70475 , H01L51/0011
摘要： A photomask (2) for optical alignment and an optical alignment method. By aligning the tail ends of first light-transmission patterns (313) which form a first photomask figure (3), and aligning the front ends of second light-transmission patterns (413), which form a second photomask figure (4) in the photomask (2), the un-exposed or underexposed areas do not exist at the tail ends of first substrate units (11) and the front end of second substrate units (12) during the process of optical alignment, thereby the problem existed in the traditional optical alignment manufacture process, that the brightness of a display is not uniform due to existing unexposed or underexposed areas, is solved, meanwhile, the reduction of the distance between the first substrate units (11) and the second substrate units (12) on a substrate is facilitated, thereby the utilization rate of the substrate is improved.

5. 发明申请

US20170261847A1 EXPOSURE METHOD, METHOD OF FABRICATING PERIODIC MICROSTRUCTURE, METHOD OF FABRICATING GRID POLARIZING ELEMENT AND EXPOSURE APPARATUS 审中-公开
公开(公告)号：US20170261847A1
公开(公告)日：2017-09-14
申请号：US15310108
申请日：2015-09-24
申请人： USHIO DENKI KABUSHIKI KAISHA
发明人： Daisuke YAJIMA , Kentaro NOMOTO , Yohei NAWAKI
IPC分类号： G03F7/00
CPC分类号： G03F7/0005 , G02B5/3058 , G02B5/3075 , G03F7/201 , G03F7/203 , G03F7/22 , G03F7/70408 , G03F7/70475
摘要： Disclosed herein an exposure apparatus capable of implementing a microfabrication onto a work with a higher throughput and a lower cost. The exposure apparatus generates interfering light by crossing two or more branched light beams branched from output light from a coherent light source at a predetermined interfering angle, and exposes the substrate by repeating an irradiation onto the substrate with the interfering light and a conveyance of the substrate. At this moment, the exposure apparatus shapes in interfering light irradiation region on the substrate onto which the interfering light is irradiated into a predetermined shape. Then, the exposure apparatus disposes a plurality of the interfering light irradiation regions in successive shots to be located adjacent to each other on the substrate in a direction of conveying the substrate without the interfering light irradiation regions being overlapped when exposing the substrate while conveying the substrate in a stepwise manner.

6. 发明授权

US09541845B2 Exposure method, exposure apparatus, and method of manufacturing device 有权
标题翻译：曝光方法，曝光装置和制造装置的方法
公开(公告)号：US09541845B2
公开(公告)日：2017-01-10
申请号：US13942910
申请日：2013-07-16
申请人： CANON KABUSHIKI KAISHA
发明人： Yoshihiro Omameuda
IPC分类号： G03F7/20
CPC分类号： G03F7/70775 , G03F7/70475
摘要： In an exposure method of performing a scan exposure of a substrate, held by a substrate stage, in a first direction for each shot region, a surface position of an exposure area is pre-measured before the exposure area reaches a region, to be irradiated with exposure light, of the substrate, movement of the substrate stage in order to change a shot region to undergo the scan exposure includes first movement in which the substrate stage moves along a curved trajectory, and second movement in which the substrate stage rectilinearly moves in the first direction, and, while the movement of the substrate stage is the first movement, the surface position is pre-measured, and a pre-measure position in a shot region is common among a plurality of shot regions.
摘要翻译：在曝光区域的曝光区域到曝光区域到达要被照射的区域之前，对曝光区域的表面位置进行预先测定的曝光方法，利用基板的曝光光，基板台的移动以改变拍摄区域以进行扫描曝光，包括基板台沿曲线轨迹移动的第一移动，以及基板台直线移动的第二移动第一方向，并且在衬底台的移动是第一移动的同时，预先测量表面位置，并且在多个拍摄区域中在拍摄区域中的预测位置是共同的。

7. 发明授权

US09423686B2 Mask for microlithography and scanning projection exposure method utilizing the mask 有权
标题翻译：掩模用于微光刻和扫描投影曝光方法利用掩模
公开(公告)号：US09423686B2
公开(公告)日：2016-08-23
申请号：US14303738
申请日：2014-06-13
申请人： Carl Zeiss SMT GmbH
发明人： Michael Patra , Markus Deguenther
IPC分类号： G03F1/68 , G03F1/38 , G03F7/20
CPC分类号： G03F1/38 , G03F1/42 , G03F1/68 , G03F7/70058 , G03F7/70475
摘要： A mask for microlithography comprises a substrate; a first pattern area on the substrate, the first pattern area comprising a first pattern extending over a first length in a mask scanning direction and a first width in a direction perpendicular to the mask scan direction; and a second pattern area on the substrate adjacent to the first pattern area in the mask scanning direction, the second pattern area comprising a second pattern extending over a second length in the mask scanning direction and a second width identical to the first width in the direction perpendicular to the mask scan direction.
摘要翻译：用于微光刻的掩模包括基底; 所述第一图案区域包括在掩模扫描方向上在第一长度上延伸的第一图案和在垂直于所述掩模扫描方向的方向上的第一宽度; 以及在掩模扫描方向上与第一图案区域相邻的基板上的第二图案区域，第二图案区域包括在掩模扫描方向上延伸第二长度的第二图案和与沿着掩模扫描方向的第一长度相同的第二宽度垂直于掩模扫描方向。

8. 发明授权

US09087740B2 Fabrication of lithographic image fields using a proximity stitch metrology 有权
标题翻译：使用邻近针迹计量法制作平版印刷图像场
公开(公告)号：US09087740B2
公开(公告)日：2015-07-21
申请号：US14100297
申请日：2013-12-09
申请人： International Business Machines Corporation
发明人： Christopher P. Ausschnitt , Jaime D. Morillo , Roger J. Yerdon
IPC分类号： G06F17/50 , H01L21/66
CPC分类号： H01L22/12 , G03F7/70475
摘要： A method of determining stitching errors in multiple lithographically exposed fields on a semiconductor layer during a semiconductor manufacturing process is provided. The method may include receiving a predetermined design distance corresponding to a plurality of petals associated with the multiple lithographically exposed fields and identifying a blossom within a single field-of-view (FOV) of a metrology tool, where the blossom is formed by a non-overlapping abutment of corners corresponding to the multiple lithographically exposed fields. The blossom may include the plurality of petals associated with the multiple lithographically exposed fields. Petal position errors may then be calculated based on both a coordinate position for each of the plurality of petals within the blossom and the predetermined design distance, whereby the calculated petal position errors are indicative of stitching errors for the multiple lithographically exposed fields.
摘要翻译：提供了一种在半导体制造过程中确定半导体层上的多个光刻曝光场中的拼接误差的方法。该方法可以包括接收对应于与多个光刻曝光场相关联的多个花瓣的预定设计距离，并且在计量工具的单个视场（FOV）内识别开花，其中开花由非 - 对应于多个光刻曝光场的角的重叠基台。花可以包括与多个光刻曝光场相关联的多个花瓣。然后可以基于花内的多个花瓣中的每一个的坐标位置和预定设计距离来计算花瓣位置误差，由此计算的花瓣位置误差指示多个光刻曝光场的缝合误差。

9. 发明授权

US09046779B2 Method of fabricating display device using maskless exposure apparatus and display device 有权
标题翻译：使用无掩模曝光装置和显示装置制造显示装置的方法
公开(公告)号：US09046779B2
公开(公告)日：2015-06-02
申请号：US13861039
申请日：2013-04-11
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Sang Hyun Yun , Cha-Dong Kim , Jung-In Park , Jae Hyuk Chang , Hi Kuk Lee
IPC分类号： B32B3/00 , G03F7/20 , G03F7/00 , G02F1/1335 , G02F1/1339
CPC分类号： G03F7/2022 , G02F1/133512 , G02F1/13394 , G03F7/0007 , G03F7/203 , G03F7/70475 , Y10T428/24851
摘要： The present invention relates to a method of fabricating a display device using a maskless exposure apparatus, and the display device, and more particularly, to a method of fabricating a display device by using a maskless exposure apparatus, which is capable of preventing a stain from being viewed, and the display device. An exemplary embodiment of the present invention provides a method of fabricating a display device, including: forming a first exposure region on a substrate by performing exposure while scanning the substrate with a first exposure head irradiating an exposure beam according to pattern information of a first pattern in a scanning direction; and forming a second exposure region adjacent to the first exposure region on the substrate by performing exposure while scanning the substrate with a second exposure head irradiating an exposure beam according to the pattern information of the first pattern in the scanning direction; in which an exposure boundary region between the first exposure region and the second exposure region is extended in the scanning direction, and the exposure boundary region overlaps a light blocking region.
摘要翻译：本发明涉及使用无掩模曝光装置和显示装置制造显示装置的方法，更具体地说，涉及一种使用无掩模曝光装置制造显示装置的方法，该无掩模曝光装置能够防止被观看，以及显示装置。本发明的一个示例性实施例提供了一种制造显示装置的方法，包括：通过在用基于第一图案的图案信息的照射曝光光束的第一曝光头扫描基板的同时进行曝光来在基板上形成第一曝光区域在扫描方向; 以及根据所述第一图案在所述扫描方向上的图案信息，利用照射曝光光束的第二曝光头对所述基板进行曝光，同时在所述基板上形成与所述第一曝光区域相邻的第二曝光区域; 其中第一曝光区域和第二曝光区域之间的曝光边界区域在扫描方向上延伸，并且曝光边界区域与遮光区域重叠。

10. 发明授权

US09006040B2 Systems and methods for fabricating semiconductor devices having larger die dimensions 有权
标题翻译：用于制造具有较大管芯尺寸的半导体器件的系统和方法
公开(公告)号：US09006040B2
公开(公告)日：2015-04-14
申请号：US13863630
申请日：2013-04-16
申请人： Taiwan Semiconductor Manufacturing Co. Ltd.
发明人： Ming-Chang Hsieh , Kong-Beng Thei
IPC分类号： G03F7/20 , H01L21/033
CPC分类号： H01L21/0338 , G03F7/70466 , G03F7/70475 , H01L21/0274 , H01L21/0337
摘要： A method of fabricating a semiconductor device is disclosed. A photosensitive material is coated over the device. A plurality of masks for a chip layout are obtained. The plurality of masks are exposed to encompass a chip area of the device using at least one reticle repeatedly. The at least one reticle is of a set of reticles. The chip area has a resultant dimension greater than a dimension of the at least one reticle. A developer is used to remove soluble portions of the photosensitive material forming a resist pattern in the chip area.
摘要翻译：公开了制造半导体器件的方法。感光材料涂覆在该装置上。获得了用于芯片布局的多个掩模。使用至少一个掩模版重复地将多个掩模曝光以包围设备的芯片区域。所述至少一个掩模版具有一组光罩。芯片面积具有大于至少一个掩模版的尺寸的合成尺寸。显影剂用于去除在芯片区域中形成抗蚀剂图案的感光材料的可溶部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式