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41. 发明授权

US09496304B2 Image sensor pixel cell with switched deep trench isolation structure 有权
标题翻译：具有开关深沟槽隔离结构的图像传感器像素单元
公开(公告)号：US09496304B2
公开(公告)日：2016-11-15
申请号：US14704493
申请日：2015-05-05
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Sing-Chung Hu , Rongsheng Yang , Gang Chen , Howard E. Rhodes , Sohei Manabe , Dyson H. Tai
IPC分类号： H01L29/66 , H01L27/146 , H04N5/378
CPC分类号： H01L27/1463 , H01L27/14601 , H01L27/14607 , H01L27/14612 , H01L27/1464 , H01L27/14643 , H04N5/378
摘要： A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
摘要翻译：像素单元包括设置在半导体材料的第一区域中的外延层中以累积图像电荷的光电二极管。浮置扩散部设置在设置在第一区域的外延层中的阱区域中。耦合转移晶体管以选择性地将图像电荷从光电二极管转移到浮动扩散。设置在半导体材料中的深沟槽隔离（DTI）结构。 DTI结构将DTI结构的一侧上的半导体材料的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离。 DTI结构包括设置在DTI结构内部的掺杂半导体材料，其被选择性地耦合到读出脉冲电压，响应于传输晶体管选择性地将图像电荷从光电二极管转移到浮动扩散。

42. 发明申请

US20160181296A1 IMAGE SENSOR PIXEL FOR HIGH DYNAMIC RANGE IMAGE SENSOR 审中-公开
标题翻译：高动态范围图像传感器的图像传感器像素
公开(公告)号：US20160181296A1
公开(公告)日：2016-06-23
申请号：US15059182
申请日：2016-03-02
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Jeong-Ho Lyu , Sohei Manabe
IPC分类号： H01L27/146
CPC分类号： H01L27/14605 , H01L27/14607 , H01L27/1461 , H01L27/14612 , H01L27/14627 , H01L27/14641 , H01L27/14643 , H01L27/14645
摘要： An image sensor pixel includes a first photodiode and a second photodiode disposed in a semiconductor material. The first photodiode has a first doped region, a first lightly doped region, and a first highly doped region. The second photodiode has a second full well capacity substantially equal to a first full well capacity of the first photodiode, and includes a second doped region, a second lightly doped region, and a second highly doped region. The image sensor pixel also includes a first microlens optically coupled to direct a first amount of image light to the first photodiode, and a second microlens optically coupled to direct a second amount of image light to the second photodiode. The first amount of image light is larger than the second amount of image light.
摘要翻译：图像传感器像素包括设置在半导体材料中的第一光电二极管和第二光电二极管。第一光电二极管具有第一掺杂区域，第一轻掺杂区域和第一高掺杂区域。第二光电二极管具有基本上等于第一光电二极管的第一全阱容量的第二全阱容量，并且包括第二掺杂区，第二轻掺杂区和第二高掺杂区。图像传感器像素还包括光学耦合以将第一量的图像光引导到第一光电二极管的第一微透镜，以及光学耦合以将第二量的图像光引导到第二光电二极管的第二微透镜。第一量的图像光大于第二量的图像光。

43. 发明授权

US09344658B2 Negative biased substrate for pixels in stacked image sensors 有权
标题翻译：堆叠图像传感器中像素的负偏置衬底
公开(公告)号：US09344658B2
公开(公告)日：2016-05-17
申请号：US14448154
申请日：2014-07-31
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Tiejun Dai , Rui Wang , Dyson H. Tai , Sohei Manabe
IPC分类号： H01L27/00 , H04N5/378 , H04N5/376 , H01L27/146
CPC分类号： H04N5/378 , H01L27/14612 , H01L27/14634 , H01L27/14636 , H04N5/376
摘要： A pixel cell includes a photodiode disposed within a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. A transfer transistor is disposed within the first semiconductor chip and coupled to the photodiode to transfer the image charge from the photodiode. A bias voltage generation circuit disposed within a second semiconductor chip for generating a bias voltage. The bias voltage generation circuit is coupled to the first semiconductor chip to bias the photodiode with the bias voltage. The bias voltage is negative with respect to a ground voltage of the second semiconductor chip. A floating diffusion is disposed within the second semiconductor chip. The transfer transistor is coupled to transfer the image charge from the photodiode on the first semiconductor chip to the floating diffusion on the second semiconductor chip.
摘要翻译：像素单元包括设置在第一半导体芯片内的光电二极管，用于响应入射在光电二极管上的光累积图像电荷。传输晶体管设置在第一半导体芯片内并耦合到光电二极管以从光电二极管传输图像电荷。偏置电压产生电路，设置在第二半导体芯片内，用于产生偏置电压。偏置电压产生电路耦合到第一半导体芯片以偏置偏压的光电二极管。偏置电压相对于第二半导体芯片的接地电压为负。浮置扩散部设置在第二半导体芯片内。传输晶体管被耦合以将图像电荷从第一半导体芯片上的光电二极管转移到第二半导体芯片上的浮动扩散。

44. 发明授权

US09190434B2 CMOS image sensor with reset shield line 有权
标题翻译：具有复位屏蔽线的CMOS图像传感器
公开(公告)号：US09190434B2
公开(公告)日：2015-11-17
申请号：US13858833
申请日：2013-04-08
申请人： OmniVision Technologies, Inc.
发明人： Sohei Manabe
IPC分类号： H01L31/062 , H01L31/113 , H01L27/146 , H04N5/335
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14636 , H04N5/335 , H04N5/3745
摘要： Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating diffusion node of the pixel cell, the reset transistor to reset a voltage of the floating diffusion node. In another embodiment, the pixel cell includes a shield line which extends athwart the coupling portion, where the shield line is to reduce a parasitic capacitance of the reset transistor to the floating diffusion node.
摘要翻译：改善像素单元中潜在井特性的技术和机制。在一个实施例中，像素单元的耦合部分将像素单元的复位晶体管耦合到像素单元的浮动扩散节点，复位晶体管复位浮动扩散节点的电压。在另一个实施例中，像素单元包括屏蔽线，其延伸到耦合部分，屏蔽线将降低复位晶体管对浮动扩散节点的寄生电容。

45. 发明申请

US20150076330A1 Dual VPIN HDR Image Sensor Pexel 审中-公开
标题翻译：双VPIN HDR图像传感器Pexel
公开(公告)号：US20150076330A1
公开(公告)日：2015-03-19
申请号：US14029515
申请日：2013-09-17
申请人： OmniVision Technologies, Inc.
发明人： Jeong-Ho Lyu , Sohei Manabe
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14616 , H01L27/14641 , H04N5/3559 , H04N5/37457
摘要： A CMOS photodiode device for use in a dual-sensitivity imaging pixel contains at least two areas of differential doping. Transistors are provided in electrical contact with these areas to govern operation of signals emanating from the photodiode on two channels, each associated with a different sensitivity to light. A plurality of such photodiodes may be incorporate into a shared arrangement forming a single pixel, in order to enhance the signals.
摘要翻译：用于双灵敏度成像像素的CMOS光电二极管装置包含至少两个差分掺杂区域。提供与这些区域电接触的晶体管以控制在两个通道上从光电二极管发出的信号的操作，每个通道与光的灵敏度相关。多个这样的光电二极管可以结合到形成单个像素的共享布置中，以便增强信号。

46. 发明授权

US11543498B2 Tri-gate charge transfer block structure in time of flight pixel 有权
公开(公告)号：US11543498B2
公开(公告)日：2023-01-03
申请号：US16522493
申请日：2019-07-25
申请人： OmniVision Technologies, Inc.
发明人： Woon II Choi , Sohei Manabe
IPC分类号： G01S7/4865 , H01L27/146 , H01L27/148 , G01S17/89
摘要： A pixel circuit includes a photodiode in semiconductor material to accumulate image charge in response to incident light. A tri-gate charge transfer block coupled includes a single shared channel region the semiconductor material. A transfer gate, shutter gate, and switch gate are disposed proximate to the single shared channel region. The transfer gate transfers image charge accumulated in the photodiode to the single shared channel region in response to a transfer signal. The shutter gate transfers the image charge in the single shared channel region to a floating diffusion in the semiconductor material in response to a shutter signal. The switch gate is configured to couple the single shared channel region to a charge storage structure in the semiconductor material in response to a switch signal.

47. 发明授权

US10986290B2 Wide dynamic range image sensor with global shutter 有权
公开(公告)号：US10986290B2
公开(公告)日：2021-04-20
申请号：US15983954
申请日：2018-05-18
申请人： OmniVision Technologies, Inc.
发明人： Sohei Manabe , Keiji Mabuchi
IPC分类号： H04N5/353 , H04N5/355 , H04N5/3745 , H04N5/378
摘要： An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a first transfer gate is coupled to the photodiode to extract image charge from the photodiode in response to a first transfer signal. A first storage gate is coupled to the first transfer gate to receive the image charge from the first transfer gate, and a first output gate is coupled to the first storage gate to receive the image charge from the first storage gate. A first capacitor is coupled to the first output gate to store the image charge.

48. 发明申请

US20210029322A1 IMAGE SENSOR WITH ELECTRONIC GLOBAL SHUTTER AND DIFFERENTIAL SENSING USING RESET-SAMPLING CAPACITOR SHARED AMONG MULTIPLE IMAGE STORAGE CAPACITORS 有权
公开(公告)号：US20210029322A1
公开(公告)日：2021-01-28
申请号：US16523850
申请日：2019-07-26
申请人： OmniVision Technologies, Inc.
发明人： Keiji Mabuchi , Sohei Manabe , Lindsay Grant
IPC分类号： H04N5/3745 , H01L27/146
摘要： An image sensor has an array of pixel blocks, and each pixel block having associated shutter transistors with each coupled to transfer an image signal comprising a charge dependent on light exposure of a selected pixel onto an image storage capacitor of a plurality of image storage capacitors associated with the pixel block, the image storage capacitors of the pixel block configured to be read through a differential amplifier into an analog to digital converter. The differential amplifier of each pixel block receives a second input from a single reset-sampling capacitor associated with the pixel block. The single reset-sampling capacitor is loaded when the pixels of the pixel block are reset.

49. 发明申请

US20210014440A1 DARK CURRENT REDUCTION FOR IMAGE SENSOR HAVING ELECTRONIC GLOBAL SHUTTER AND IMAGE STORAGE CAPACITORS 有权
公开(公告)号：US20210014440A1
公开(公告)日：2021-01-14
申请号：US16506693
申请日：2019-07-09
申请人： OmniVision Technologies, Inc.
发明人： Keiji Mabuchi , Sohei Manabe , Lindsay Grant
IPC分类号： H04N5/361 , H04N5/357 , H04N5/378 , H04N5/369 , H04N5/3745
摘要： An image sensor has an array of pixels, each pixel having an associated shutter transistor coupled to transfer a charge dependent on light exposure of the pixel onto an image storage capacitor, the image-storage capacitors being configured to be read into an analog to digital converter. The shutter transistors are P-type transistors in N-wells, the wells held at an analog power voltage to reduce sensitivity of pixels to dark current; in an alternative embodiment the shutter transistors are N-type transistors in P-wells, the wells held at an analog ground voltage.

50. 发明授权

US10687003B2 Linear-logarithmic image sensor 有权
公开(公告)号：US10687003B2
公开(公告)日：2020-06-16
申请号：US15228874
申请日：2016-08-04
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Keiji Mabuchi , Dyson H. Tai , Oray Orkun Cellek , Duli Mao , Sohei Manabe
IPC分类号： H04N5/355 , H04N5/369 , H01L27/146 , H04N5/3745 , H04N9/04 , H04N5/378
摘要： A pixel array for use in a high dynamic range image sensor includes a plurality of pixels arranged in a plurality of rows and columns in the pixel array. Each one of the pixels includes a linear subpixel and a log subpixel disposed in a semiconductor material. The linear subpixel is coupled to generate a linear output signal having a linear response, and the log subpixel is coupled to generate a log output signal having a logarithmic response in response to the incident light. A bitline is coupled to the linear subpixel and to the log subpixel to receive the linear output signal and the log output signal. The bitline is one of a plurality of bitlines coupled to the plurality of pixels. Each one of the plurality of bitlines is coupled to a corresponding grouping of the plurality of pixels.

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