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41. 发明授权

US09153726B1 Inductive optical sensor utilizing frontside processing of photo sensitive material 有权
标题翻译：感光材料的前端处理感应光学传感器
公开(公告)号：US09153726B1
公开(公告)日：2015-10-06
申请号：US14249967
申请日：2014-04-10
申请人： Texas Instruments Incorporated
发明人： Ann Gabrys , Peter Hopper , William French
IPC分类号： H01L31/02 , H01L31/0336 , H01L31/109 , H01L31/18
CPC分类号： H01L31/09 , G02B6/42
摘要： A photodetector detects the absence or presence of light by detecting a change in the inductance of a coil. The magnetic field generated when a current flows through the coil passes through an electron-hole generation region. Charged particles in the electron-hole generation region come under the influence of the magnetic field, and generate eddy currents whose magnitudes depend on whether light is absent or present. The eddy currents generate a magnetic field that opposes the magnetic field generated by current flowing through the coil.
摘要翻译：光电检测器通过检测线圈的电感的变化来检测光的存在或不存在。当电流流过线圈时产生的磁场通过电子空穴产生区域。电子空穴产生区域中的带电粒子受到磁场的影响，并产生大小取决于光不存在或存在的涡流。涡流产生与由流过线圈的电流产生的磁场相反的磁场。

42. 发明授权

US09112027B2 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US09112027B2
公开(公告)日：2015-08-18
申请号：US14468519
申请日：2014-08-26
申请人： FUJITSU SEMICONDUCTOR LIMITED
发明人： Yosuke Shimamune , Akira Katakami , Akiyoshi Hatada , Masashi Shima , Naoyoshi Tamura
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/78 , H01L21/02 , H01L21/306 , H01L29/04 , H01L29/08 , H01L29/165 , H01L29/66
CPC分类号： H01L29/7848 , H01L21/02381 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/28518 , H01L21/30608 , H01L29/045 , H01L29/0653 , H01L29/0847 , H01L29/165 , H01L29/45 , H01L29/4975 , H01L29/518 , H01L29/665 , H01L29/66628 , H01L29/66636 , H01L29/78 , H01L29/7833 , Y10S257/90
摘要： A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion region formed in the silicon substrate at respective outer sides of sidewall insulation films of the gate electrode, and a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films in epitaxial relationship to the silicon substrate, the SiGe mixed crystal regions being defined by respective sidewall surfaces facing with each other, wherein, in each of the SiGe mixed crystal regions, the sidewall surface is defined by a plurality of facets forming respective, mutually different angles with respect to a principal surface of the silicon substrate.
摘要翻译：一种半导体器件包括：栅极电极，形成在硅衬底上，栅极绝缘膜对应于沟道区，形成在硅衬底中的p型扩散区的源极和漏极区域的侧壁绝缘膜的相应外侧栅电极和在硅衬底中在与硅衬底呈外延角的侧壁绝缘膜的各外侧形成的一对SiGe混合晶体区域，SiGe混晶区域由彼此相对的侧壁表面限定，其中在每个SiGe混合晶体区域中，侧壁表面由相对于硅衬底的主表面形成相应不同角度的多个面限定。

43. 发明授权

US09093516B2 Semiconductor heterostructure field effect transistor and method for making thereof 有权
标题翻译：半导体异质结场效应晶体管及其制造方法
公开(公告)号：US09093516B2
公开(公告)日：2015-07-28
申请号：US14089613
申请日：2013-11-25
申请人： IMEC
发明人： Mohammad Ali Pourghaderi , Bart Soree
IPC分类号： H01L31/0336 , H01L29/78 , H01L29/66 , H01L29/778 , H01L29/06 , H01L29/205
CPC分类号： H01L29/78 , H01L29/068 , H01L29/205 , H01L29/66431 , H01L29/66462 , H01L29/66977 , H01L29/7781
摘要： A heterostructure field effect transistor is provided comprising a semiconductor wire comprising in its longitudinal direction a source and a drain region, a channel region in between the source and drain region and in its transversal direction for the source region, a source core region and a source shell region disposed around the source core region, the source shell region having in its transversal direction for the drain region, a drain core region and a drain shell region disposed around the drain core region, the drain shell region having in its transversal direction for the channel region, a channel core region and a channel shell region disposed around the channel core region; wherein the thickness of the channel shell region is smaller than the thickness of the source shell region and is smaller than the thickness of the drain shell region.
摘要翻译：提供了一种异质结构场效应晶体管，其包括在其纵向方向上包括源极和漏极区域的源极和漏极区域之间的沟道区域以及用于源极区域的横向方向的源极区域和源极壳体区域，其设置在源极区域周围，源极壳区域在其横向方向上为漏极区域，漏极区域和漏极壳体区域设置在漏极区域周围，漏极壳体区域在其横向方向上为沟道区域，沟道芯区域和设置在沟道芯区域周围的沟道壳体区域; 其中所述通道壳体区域的厚度小于所述源极壳体区域的厚度并且小于所述漏极壳体区域的厚度。

44. 发明授权

US09087901B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09087901B2
公开(公告)日：2015-07-21
申请号：US14571561
申请日：2014-12-16
申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
发明人： Lele Chen
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L29/78 , H01L27/088 , H01L29/08
CPC分类号： H01L29/7848 , H01L21/02381 , H01L21/0245 , H01L21/02494 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/823425 , H01L27/088 , H01L29/06 , H01L29/0847 , H01L29/086 , H01L29/0869 , H01L29/0878 , H01L29/0886 , H01L29/165 , H01L29/66477 , H01L29/66636 , H01L29/78 , H01L29/7816
摘要： A semiconductor device is disclosed. The device includes a plurality of gates formed on a surface of a substrate, a plurality of sidewalls formed on side surfaces of the gates, a Sigma-shaped recess formed in the substrate between adjacent gates, a SiGe seed layer formed on an inner surface of the Sigma-shaped recess, boron-doped bulk SiGe formed on a surface of the SiGe seed layer, with the boron-doped bulk SiGe filling the Sigma-shaped recess, and a boron-doped SiGe regeneration layer formed in a first recess beneath the surface of the substrate. The first recess is formed by etching a portion of the SiGe seed layer and the boron-doped bulk SiGe in the Sigma-shaped recess, and the boron-doped SiGe regeneration layer has a higher concentration of boron than the SiGe seed layer or the boron-doped bulk SiGe.
摘要翻译：公开了一种半导体器件。该器件包括形成在衬底的表面上的多个栅极，形成在栅极的侧表面上的多个侧壁，形成在相邻栅极之间的衬底中的Sigma形凹部，形成在栅极的内表面上的SiGe晶种层形成在SiGe种子层的表面上的Sigma形凹槽，掺硼体积SiGe以及填充Sigma形凹槽的硼掺杂体SiGe，以及形成在第一凹槽内的掺硼SiGe再生层基板的表面。通过蚀刻SiGe种子层中的一部分和Sigma形凹部中的掺硼体SiGe来形成第一凹槽，并且硼掺杂的SiGe再生层具有比SiGe种子层或硼更高的硼浓度掺杂体积SiGe。

45. 发明授权

US09070795B2 III-V heterojunction light emitting diode 有权
标题翻译： III-V异质结发光二极管
公开(公告)号：US09070795B2
公开(公告)日：2015-06-30
申请号：US13935062
申请日：2013-07-03
申请人： International Business Machines Corporation
发明人： Tze-Chiang Chen , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
IPC分类号： H01L29/22 , H01L33/00 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L33/18 , H01L21/02
CPC分类号： H01L33/0079 , H01L21/02546 , H01L33/0025 , H01L33/06 , H01L33/18 , H01L33/305 , H01L33/62 , H01L2924/10329
摘要： A method for forming a light emitting device includes forming a monocrystalline III-V emissive layer on a monocrystalline substrate and forming a first doped layer on the emissive layer. A first contact is deposited on the first doped layer. The monocrystalline substrate is removed from the emissive layer by a mechanical process. A second doped layer is formed on the emissive layer on a side from which the substrate has been removed. The second doped layer has a dopant conductivity opposite that of the first doped layer. A second contact is deposited on the second doped layer.
摘要翻译：一种用于形成发光器件的方法包括在单晶衬底上形成单晶III-V发光层，并在发光层上形成第一掺杂层。第一接触沉积在第一掺杂层上。通过机械过程从发射层去除单晶衬底。在发射层上形成第二掺杂层，该衬底已被去除。第二掺杂层具有与第一掺杂层相反的掺杂剂导电性。第二接触沉积在第二掺杂层上。

46. 发明申请

US20150179845A1 SOLID-STATE IMAGING DEVICE, LIGHT DETECTING DEVICE, AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置，光检测装置和电子装置
公开(公告)号：US20150179845A1
公开(公告)日：2015-06-25
申请号：US14569248
申请日：2014-12-12
申请人： Sony Corporation
发明人： Atsushi Toda
IPC分类号： H01L31/0352 , H01L27/146 , H04N5/33 , H01L31/0336
CPC分类号： H01L27/14649 , H01L27/14683 , H01L27/14696 , H01L31/035209 , H01L31/109
摘要： A solid-state imaging device includes a Multi-Quantum Wells (MQW) structure which combines and uses a non-Group IV lattice matching-based compound semiconductor with an absolute value of a mismatch ratio of less than 1% on a silicon substrate so as to have sensitivity to at least infrared light.
摘要翻译：一种固态成像装置包括多个量子阱（MQW）结构，其结合并使用在硅衬底上具有小于1％的失配比的绝对值的基于非IV族晶格匹配的化合物半导体，以便至少具有至少红外光的敏感性。

47. 发明授权

US09006786B2 Fin structure of semiconductor device 有权
标题翻译：半导体器件的鳍结构
公开(公告)号：US09006786B2
公开(公告)日：2015-04-14
申请号：US13934992
申请日：2013-07-03
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuo-Cheng Ching , Chih-Hao Wang , Zhiqiang Wu , Carlos H. Diaz , Jean-Pierre Colinge
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L29/78 , H01L21/02
CPC分类号： H01L29/7848 , H01L21/02107 , H01L21/02123 , H01L21/02175 , H01L21/02233 , H01L21/02274 , H01L21/02282 , H01L21/0262 , H01L21/28238 , H01L21/3065 , H01L21/308 , H01L21/76224 , H01L21/823431 , H01L21/823437 , H01L21/823481 , H01L21/845 , H01L27/0886 , H01L27/1211 , H01L29/0649 , H01L29/0653 , H01L29/0847 , H01L29/165 , H01L29/66545 , H01L29/66795 , H01L29/6681 , H01L29/7843 , H01L29/7846 , H01L29/785 , H01L29/7851 , H01L29/7856
摘要： The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower portion comprising a first semiconductor material having a first lattice constant; an upper portion comprising the first semiconductor material having the first lattice constant; a middle portion between the lower portion and upper portion, wherein the middle portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; and a pair of notches extending into opposite sides of the middle portion; and an isolation structure surrounding the fin structure, wherein a top surface of the isolation structure is higher than a top surface of the pair of notches.
摘要翻译：本发明涉及鳍状场效应晶体管（FinFET）。示例性FinFET包括包含主表面的衬底; 从主表面突出的翅片结构，包括下部，包括具有第一晶格常数的第一半导体材料; 上部，包括具有第一晶格常数的第一半导体材料; 下部和上部之间的中间部分，其中中间部分包括具有不同于第一晶格常数的第二晶格常数的第二半导体材料; 以及延伸到中间部分的相对侧的一对凹口; 以及围绕所述翅片结构的隔离结构，其中所述隔离结构的顶表面高于所述一对凹口的顶表面。

48. 发明授权

US08969124B2 Method for fabricating Cu—In—Ga—Se film solar cell 有权
标题翻译：制备Cu-In-Ga-Se薄膜太阳能电池的方法
公开(公告)号：US08969124B2
公开(公告)日：2015-03-03
申请号：US14153026
申请日：2014-01-11
申请人： Liuyu Lin , Zhun Zhang
发明人： Liuyu Lin , Zhun Zhang
IPC分类号： H01L21/00 , H01L31/18 , H01L31/0336
CPC分类号： H01L31/1864 , C23C14/0623 , C23C14/3414 , C23C14/3492 , C23C14/352 , H01L31/0322 , H01L31/0336 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the molybdenum back electrode; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
摘要翻译：提供了一种制造Cu-In-Ga-Se膜太阳能电池的方法。该方法包括：a）在衬底上制造钼背电极; b）在钼背电极上制造Cu-In-Ga-Se吸收层; c）进行退火; d）在Cu-In-Ga-Se吸收层上制造In2Se3或ZnS缓冲层; e）制造本征氧化锌高阻抗层; f）在本征氧化锌高阻抗层上制造氧化铟锡薄膜低阻层; g）在铟锡氧化物膜低阻抗层上制造铝电极。

49. 发明授权

US08921691B2 Solar cell and manufacturing method thereof 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08921691B2
公开(公告)日：2014-12-30
申请号：US12922996
申请日：2009-03-19
申请人： Shogo Ishizuka , Shigeru Niki , Nobuaki Kido , Hiroyuki Honmoto
发明人： Shogo Ishizuka , Shigeru Niki , Nobuaki Kido , Hiroyuki Honmoto
IPC分类号： H01L31/0336 , H01L31/0392
CPC分类号： H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： There is provided a solar cell in which a lower electrode layer, a photoelectric conversion layer having a chalcopyrite structure that includes a Group Ib element, a Group IIIb element, and a Group VIb element, and an upper electrode layer are sequentially formed on top of a substrate, wherein the solar cell is provided with a silicate layer between the substrate and the lower electrode layer.
摘要翻译：提供了一种太阳能电池，其中下电极层，具有包含第Ib族元素，IIIb族元素和VIb族元素的黄铜矿结构的光电转换层和上电极层依次形成在衬底，其中所述太阳能电池在所述衬底和所述下电极层之间设置有硅酸盐层。

50. 发明授权

US08901538B2 Nano resonator and manufacturing method thereof 有权
标题翻译：纳米谐振器及其制造方法
公开(公告)号：US08901538B2
公开(公告)日：2014-12-02
申请号：US13846685
申请日：2013-03-18
申请人： Samsung Electronics Co., Ltd.
发明人： Jie Ai Yu , Duck Hwan Kim , In Sang Song , Jing Cui
IPC分类号： H01L31/0336 , H01L31/072 , H01L29/745 , H01L29/76 , H01L21/336 , B81C1/00 , B81B3/00 , H03H3/007 , H03H9/24
CPC分类号： B81C1/00134 , B81B3/0018 , H03H3/0072 , H03H9/2463
摘要： A nano resonator includes a substrate, a first insulating layer disposed on the substrate, a first source disposed on the first insulating layer at a first position, a first drain disposed on the first insulating layer at a second position spaced apart from the first position so that the first drain faces the first source, a first nano-wire channel having a first end connected to the first source and a second end connected to the first drain, and having a doping type and a doping concentration that are identical to a doping type and a doping concentration of the first source and the first drain, and a second nano-wire channel disposed at a predetermined distance from the first nano-wire channel in a direction perpendicular to the substrate or a direction parallel to the substrate.
摘要翻译：纳米谐振器包括衬底，设置在衬底上的第一绝缘层，在第一位置处设置在第一绝缘层上的第一源极，在与第一位置间隔开的第二位置处设置在第一绝缘层上的第一漏极，第一漏极面向第一源极，第一纳米线通道具有连接到第一源极的第一端和连接到第一漏极的第二端，并且具有与掺杂类型相同的掺杂类型和掺杂浓度以及第一源极和第一漏极的掺杂浓度以及与第一纳米线通道在垂直于衬底的方向或平行于衬底的方向设置在预定距离处的第二纳米线通道。

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