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41. 发明授权

US08796160B2 Optical cavity furnace for semiconductor wafer processing 有权
标题翻译：光腔炉用于半导体晶圆加工
公开(公告)号：US08796160B2
公开(公告)日：2014-08-05
申请号：US12919433
申请日：2009-03-12
申请人： Bhushan L. Sopori
发明人： Bhushan L. Sopori
IPC分类号： H01L21/26 , F27D11/12
CPC分类号： H01L21/324 , H01L21/67115 , H05B3/0047
摘要： An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.
摘要翻译：具有与炉的光腔18相关联的多个光能源12的光腔炉10。多个光能源12可以是适于产生适当水平的光能的灯或其他装置。光腔炉10还可以包括一个或多个反射器14和与光能源12相关联的一个或多个壁16，使得反射器14和壁16限定光腔18.壁16可以具有任何期望的构造或形状以增强作为光腔18的炉的操作。光能源12可以相对于反射器14和限定光腔的壁定位在任何位置。光腔炉10还可以包括半导体晶片传输系统22，用于将一个或多个半导体晶片20传送通过光腔。

42. 发明授权

US08785286B2 Techniques for FinFET doping 有权
标题翻译： FinFET掺杂技术
公开(公告)号：US08785286B2
公开(公告)日：2014-07-22
申请号：US12702803
申请日：2010-02-09
申请人： Chun Hsiung Tsai , Chien-Tai Chan , Mao-Rong Yeh , Da-Wen Lin
发明人： Chun Hsiung Tsai , Chien-Tai Chan , Mao-Rong Yeh , Da-Wen Lin
IPC分类号： H01L21/336 , H01L21/26 , H01L21/42 , H01L21/223
CPC分类号： H01L29/66803 , H01L21/2236 , H01L21/2254 , H01L21/26526 , H01L21/26586
摘要： A method of forming an integrated circuit includes providing a semiconductor wafer including a semiconductor fin dispatched on a surface of the semiconductor wafer; forming a dopant-rich layer having an impurity on a top surface and sidewalls of the semiconductor fin, wherein the impurity is of n-type or p-type; performing a knock-on implantation to drive the impurity into the semiconductor fin; and removing the dopant-rich layer.
摘要翻译：一种形成集成电路的方法包括提供半导体晶片，该半导体晶片包括在半导体晶片的表面上分配的半导体鳍; 在所述半导体鳍片的顶表面和侧壁上形成具有杂质的富掺杂层，其中所述杂质为n型或p型; 执行敲击植入以将杂质驱动到半导体鳍片中; 并除去富含掺杂剂的层。

43. 发明授权

US08709904B2 Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus 失效
标题翻译：半导体衬底的制造方法，半导体衬底，电子器件的制造方法以及反应装置
公开(公告)号：US08709904B2
公开(公告)日：2014-04-29
申请号：US13131523
申请日：2009-11-26
申请人： Tomoyuki Takada , Masahiko Hata , Hisashi Yamada
发明人： Tomoyuki Takada , Masahiko Hata , Hisashi Yamada
IPC分类号： H01L21/331 , H01L21/336 , H01L21/46 , H01L21/78 , H01L21/26
CPC分类号： H01L21/02532 , H01L21/02667 , H01L21/2686 , H01L21/67115 , H01L29/78
摘要： There is provided a method of producing a semiconductor wafer by thermally processing a base wafer having a portion to be thermally processed that is to be thermally processed. The method comprises a step of providing, on the base wafer, a portion to be heated that generates heat through absorption of an electromagnetic wave and selectively heats the portion to be thermally processed, a step of applying an electromagnetic wave to the base wafer, and a step of lowering the lattice defect density of the portion to be thermally processed, by means of the heat generated by the portion to be heated through the absorption of the electromagnetic wave.
摘要翻译：提供了通过热处理具有待热处理部分的基底晶片来制造半导体晶片的方法。该方法包括在基底晶片上提供通过吸收电磁波产生热并选择性地加热待热处理的部分的加热部分，向基底晶片施加电磁波的步骤，以及借助于通过吸收电磁波而被加热部分产生的热量来降低待热处理部分的晶格缺陷密度的步骤。

44. 发明授权

US08703582B2 Laser processing method 有权
标题翻译：激光加工方法
公开(公告)号：US08703582B2
公开(公告)日：2014-04-22
申请号：US13160062
申请日：2011-06-14
申请人： Yoshinori Abe
发明人： Yoshinori Abe
IPC分类号： H01L21/00 , H01L21/26 , H01L21/42 , H01L21/66
CPC分类号： H01L33/0095 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/172 , B23K2103/50 , H01L21/268
摘要： An element-group formation substrate (20) having plural semiconductor light emitting elements (21) formed on a substrate front surface (11a) is sequentially irradiated with a laser beam (64) having a first output from a substrate back surface (11b) side in the y direction, and the laser beam (64) is sequentially collected to a part having a first depth D1 from the substrate back surface (11b), thereby forming a first modified region L1. The substrate (20) having the first modified region L1 formed therein is sequentially irradiated with the laser beam (64) having a third output (
摘要翻译：具有形成在基板前表面（11a）上的多个半导体发光元件（21）的元件组形成基板（20）从基板背面（11b）侧依次照射具有第一输出的激光束（64）沿着y方向，从基板背面（11b）依次将激光束（64）收集到具有第一深度D1的部分，从而形成第一改质区域L1。在其中形成有第一改质区域L1的基板（20）在y方向上从基板背面11b侧起第三输出（<第一输出）的激光束（64）依次照射， 64）从比第一深度D1浅的衬底背面（11b）顺序收集到具有第三深度D3的部分，从而形成第三改质区域L3。

45. 发明申请

US20140092384A1 DIFFRACTION GRATING MANUFACTURING METHOD, SPECTROPHOTOMETER, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：衍射光栅制造方法，分光光度计和半导体器件制造方法
公开(公告)号：US20140092384A1
公开(公告)日：2014-04-03
申请号：US14118375
申请日：2012-05-17
申请人： Yoshisada Ebata , Shigeru Matsui , Norio Hasegawa , Kazuyuki Kakuta , Toshihiko Onozuka
发明人： Yoshisada Ebata , Shigeru Matsui , Norio Hasegawa , Kazuyuki Kakuta , Toshihiko Onozuka
IPC分类号： G02B5/18 , H01L21/26
CPC分类号： G02B5/1857 , G01J3/0262 , G01J3/18 , G01J3/42 , G02B5/18 , G02B5/1814 , G02B5/1861 , G03F1/50 , G03F1/54 , G03F7/0005 , H01L21/26
摘要： The present invention has been made in view of the above, and an object thereof is to provide a manufacturing technique capable of manufacturing a diffraction grating which is suitable for use in a spectrophotometer and has an apex angle of a convex portion of about 90° and can satisfy high diffraction efficiency and a low stray light amount. A method of manufacturing a diffraction grating, the method including: setting an exposure condition such that a sectional shape of a convex portion of a resist on a substrate, which has been formed by exposure, is an asymmetric triangle with respect to an opening portion shape of a mask having an opening portion with a periodic structure and an angle formed by a long side and a short side of the triangle is about 90°; and performing exposure.
摘要翻译：发明内容本发明是鉴于上述问题而完成的，其目的在于提供一种制造技术，其能够制造适用于分光光度计的衍射光栅，并具有约90°的凸部的顶角和可以满足高衍射效率和低杂散光量。一种制造衍射光栅的方法，该方法包括：设置曝光条件，使得通过曝光形成的基板上的抗蚀剂的凸部的截面形状相对于开口部形状为不对称三角形具有周期性结构的开口部分和由三角形的长边和短边形成的角度的面具为约90°; 并进行曝光。

46. 发明授权

US08598014B2 Method for producing a semiconductor element 有权
标题翻译：半导体元件的制造方法
公开(公告)号：US08598014B2
公开(公告)日：2013-12-03
申请号：US13281598
申请日：2011-10-26
申请人： Michael Fehrer , Berthold Hahn , Volker Härle , Stephan Kaiser , Frank Otte , Andreas Plössl
发明人： Michael Fehrer , Berthold Hahn , Volker Härle , Stephan Kaiser , Frank Otte , Andreas Plössl
IPC分类号： H01L21/26
CPC分类号： H01L21/76251 , B23K26/40 , B23K26/50 , B23K2103/172 , C30B29/40 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/2007 , H01L24/29 , H01L24/83 , H01L33/0079 , H01L2224/29 , H01L2224/29101 , H01L2224/29111 , H01L2224/29144 , H01L2224/29298 , H01L2224/83001 , H01L2224/8319 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/0106 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/157 , H01L2924/15763 , H01L2924/00 , H01L2924/01026 , H01L2924/01027 , H01L2924/01028 , H01L2924/01046 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.
摘要翻译：提出了一种用于制造光电子部件的方法。该方法包括通过用具有平台状空间光束轮廓的激光束照射从衬底分离基于III-V-化合物半导体材料的半导体层，其中半导体层的各个区域被连续照射。

47. 发明授权

US08575003B2 Method for producing a semiconductor component 有权
公开(公告)号：US08575003B2
公开(公告)日：2013-11-05
申请号：US12583500
申请日：2009-08-21
申请人： Michael Fehrer , Berthold Hahn , Volker Härle , Stephan Kaiser , Frank Otte , Andreas Plössl
发明人： Michael Fehrer , Berthold Hahn , Volker Härle , Stephan Kaiser , Frank Otte , Andreas Plössl
IPC分类号： H01L21/26
CPC分类号： H01L21/76251 , B23K26/40 , B23K26/50 , B23K2103/172 , C30B29/40 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/2007 , H01L24/29 , H01L24/83 , H01L33/0079 , H01L2224/29 , H01L2224/29101 , H01L2224/29111 , H01L2224/29144 , H01L2224/29298 , H01L2224/83001 , H01L2224/8319 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/0106 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/157 , H01L2924/15763 , H01L2924/00 , H01L2924/01026 , H01L2924/01027 , H01L2924/01028 , H01L2924/01046 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.

48. 发明授权

US08563399B2 Detachable substrate and processes for fabricating and detaching such a substrate 有权
标题翻译：可拆卸基板和用于制造和分离这种基板的工艺
公开(公告)号：US08563399B2
公开(公告)日：2013-10-22
申请号：US13217928
申请日：2011-08-25
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： H01L29/66 , H01L29/76 , H01L21/76 , H01L21/26
CPC分类号： H01L21/76254
摘要： The invention relates to a detachable substrate for the electronics, optics or optoelectronics industry, that includes a detachable layer resting on a buried weakened region. This substrate is remarkable in that this buried weakened region consists of a semiconductor material that is denser in the liquid state than in the solid state and that contains in places precipitates of naturally volatile impurities. The invention also relates to a process for fabricating and detaching a detachable substrate.
摘要翻译：本发明涉及用于电子，光学或光电子工业的可拆卸衬底，其包括搁置在弱化区域上的可拆卸层。该衬底是显着的，因为该掩埋的弱化区域由在液态比在固态更致密并且在其中含有天然挥发性杂质的沉淀物的半导体材料组成。本发明还涉及一种用于制造和分离可拆卸基底的方法。

49. 发明授权

US08536658B2 Mechanisms for forming ultra shallow junction 有权
标题翻译：形成超浅结的机理
公开(公告)号：US08536658B2
公开(公告)日：2013-09-17
申请号：US13650684
申请日：2012-10-12
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chii-Ming Wu , Yu-Lien Huang , Chun Hsiung Tsai
IPC分类号： H01L21/02 , H01L27/088 , H01L21/26 , H01L21/425
CPC分类号： H01L29/7831 , H01L21/2236 , H01L21/823418 , H01L21/823431 , H01L29/66795 , H01L29/66803
摘要： The embodiments of methods and structures are for doping fin structures by plasma doping processes to enable formation of shallow lightly doped source and drain (LDD) regions. The methods involve a two-step plasma doping process. The first step plasma process uses a heavy carrier gas, such as a carrier gas with an atomic weight equal to or greater than about 20 amu, to make the surfaces of fin structures amorphous and to reduce the dependence of doping rate on crystalline orientation. The second step plasma process uses a lighter carrier gas, which is lighter than the carrier gas for the first step plasma process, to drive the dopants deeper into the fin structures. The two-step plasma doping process produces uniform dopant profile beneath the outer surfaces of the fin structures.
摘要翻译：方法和结构的实施例用于通过等离子体掺杂工艺掺杂鳍结构，以形成浅掺杂的源极和漏极（LDD）区域。该方法涉及两步等离子体掺杂工艺。第一级等离子体工艺使用重载气，例如原子量等于或大于约20amu的载气，以使翅片结构的表面无定形并且降低掺杂速率对晶体取向的依赖性。第二级等离子体处理使用比用于第一级等离子体处理的载气轻的载气，以将掺杂剂更深地驱动到鳍结构中。两级等离子体掺杂工艺在翅片结构的外表面下方产生均匀的掺杂剂分布。

50. 发明授权

US08492295B2 On-chip cooling for integrated circuits 失效
标题翻译：集成电路的片上冷却
公开(公告)号：US08492295B2
公开(公告)日：2013-07-23
申请号：US13614273
申请日：2012-09-13
申请人： Kaushik A. Kumar , Andres Fernando Munoz , Michael Ray Sievers , Richard Stephen Wise
发明人： Kaushik A. Kumar , Andres Fernando Munoz , Michael Ray Sievers , Richard Stephen Wise
IPC分类号： H01L21/26 , H01L21/76
CPC分类号： H01L23/467 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure fabrication method. A provided structure includes: a semiconductor substrate, a transistor on the semiconductor substrate, N interconnect layers on the semiconductor substrate, and a temporary filling region within the N layers. N is at least 2. The temporary filling region is heated at a high temperature sufficiently high to result in the temporary filling material being replaced by a cooling pipes system that does not include any solid or liquid material. A first portion and a second portion of the cooling pipes system are each in direct physical contact with a surrounding ambient at a first interface and a second interface respectively such that a first direction perpendicular to the first interface is perpendicular to a second direction perpendicular to the second interface. A totality of interfaces between the cooling pipes system and the ambient consists of the first interface and the second interface.
摘要翻译：半导体结构制造方法。提供的结构包括：半导体衬底，半导体衬底上的晶体管，半导体衬底上的N个互连层，以及N层内的临时填充区域。 N至少为2.临时充填区域在足够高的高温下加热，导致临时填充材料被不包括任何固体或液体材料的冷却管道系统所替代。冷却管道系统的第一部分和第二部分分别与第一界面和第二界面处的周围环境直接物理接触，使得垂直于第一界面的第一方向垂直于垂直于第一界面的第二方向第二个接口冷却管道系统和环境之间的总体接口包括第一接口和第二接口。

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