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1. 发明授权

US08658446B2 Method for fabricating semiconductor substrate for optoelectronic components 有权
标题翻译：制造光电元件半导体衬底的方法
公开(公告)号：US08658446B2
公开(公告)日：2014-02-25
申请号：US12290707
申请日：2008-11-03
申请人： Volker Härle
发明人： Volker Härle
IPC分类号： H01L21/00
CPC分类号： H01L33/10
摘要： Presented is a method for fabricating a semiconductor substrate. The method includes implanting impurity material into the semiconductor substrate, and forming a reflective layer-like zone in the semiconductor substrate that includes the impurity material.
摘要翻译：提出了一种制造半导体衬底的方法。该方法包括将杂质材料注入到半导体衬底中，并在包括杂质材料的半导体衬底中形成反射层状区域。

2. 发明授权

US08268659B2 Edge-emitting semiconductor laser chip 有权
标题翻译：边缘发射半导体激光芯片
公开(公告)号：US08268659B2
公开(公告)日：2012-09-18
申请号：US13011326
申请日：2011-01-21
申请人： Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
发明人： Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
IPC分类号： H01L21/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation.
摘要翻译：一种用于制造边缘发射半导体激光器芯片的方法，其具有载体衬底，布置在载体衬底和边缘发射半导体激光器芯片的部件结构之间的层间隔。中间层适于提供载体基底和部件结构之间的粘附。组件结构具有用于产生辐射的活动区域。

3. 发明授权

US08017416B2 Method for the production of a plurality of opto-electronic semiconductor chips and opto-electronic semiconductor chip 有权
标题翻译：生产多个光电子半导体芯片和光电半导体芯片的方法
公开(公告)号：US08017416B2
公开(公告)日：2011-09-13
申请号：US10566955
申请日：2004-07-22
申请人： Volker Härle
发明人： Volker Härle
IPC分类号： H01L21/00
CPC分类号： H01L33/005 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L2924/0002 , H01L2924/00
摘要： Presented is a method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with at least one semiconductor layer. The method involves providing a chip composite base that includes a substrate and a growth surface. A mask material layer is formed on the growth surface. The mask material layer includes a multiplicity of windows having an average extent of less than or equal to 1 μm. A mask material is chosen so that a semiconductor material of the semiconductor layer that is to be grown essentially cannot grow on the mask material or can grow in a substantially worse manner in comparison with the growth surface. Subsequently, semiconductor layers are deposited essentially simultaneously onto regions of the growth surface that lie within the windows. The chip composite base with applied material is singulated to form semiconductor chips.
摘要翻译：提出了一种用于制造多个具有多个具有至少一个半导体层的结构元件的光电子半导体芯片的方法。该方法包括提供包括基底和生长表面的芯片复合基底。在生长表面上形成掩模材料层。掩模材料层包括平均程度小于或等于1μm的多个窗口。选择掩模材料，使得待生长的半导体层的半导体材料基本上不能在掩模材料上生长，或者可以以与生长表面相比更差的方式生长。随后，半导体层基本上同时沉积在位于窗内的生长表面的区域上。将具有应用材料的芯片复合基底单片化以形成半导体芯片。

4. 发明授权

US07943944B2 GaN-based radiation-emitting thin-layered semiconductor component 有权
标题翻译： GaN基辐射发射薄层半导体元件
公开(公告)号：US07943944B2
公开(公告)日：2011-05-17
申请号：US10523551
申请日：2003-06-20
申请人： Dominik Eisert , Berthold Hahn , Volker Härle
发明人： Dominik Eisert , Berthold Hahn , Volker Härle
IPC分类号： H01L29/22 , H01L29/24
CPC分类号： H01L33/20 , H01L33/32
摘要： A radiation-emitting thin-film semiconductor component with a multilayer structure (12) based on GaN, which contains an active, radiation-generating layer (14) and has a first main area (16) and a second main area (18)—remote from the first main area—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main area (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main area (18) of the multilayer structure is patterned one- or two-dimensionally.
摘要翻译：一种具有基于GaN的多层结构（12）的辐射发射薄膜半导体部件，其包含有源辐射产生层（14）并具有第一主区域（16）和第二主区域（18）远离第一主区域 - 用于耦合在有源辐射产生层中产生的辐射。此外，多层结构（12）的第一主区域（16）耦合到反射层或界面，并且邻接多层结构的第二主区域（18）的多层结构的区域（22）被图案化一维或二维。

5. 发明申请

US20090290610A1 Method for Laterally Cutting Through a Semiconductor Wafer and Optoelectronic Component 有权
标题翻译：用于横向切割半导体晶片和光电元件的方法
公开(公告)号：US20090290610A1
公开(公告)日：2009-11-26
申请号：US11991488
申请日：2006-08-07
申请人： Christoph Eichler , Volker Härle
发明人： Christoph Eichler , Volker Härle
IPC分类号： H01S5/00 , H01L21/30 , H01L33/00
CPC分类号： H01S5/0201 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A method for laterally dividing a semiconductor wafer (1) comprises the method steps of: providing a growth substrate (2); epitaxially growing a semiconductor layer sequence (3), which comprises a functional semiconductor layer (5), onto the growth substrate (2); applying a mask layer (10) to partial regions of the semiconductor layer sequence (3) in order to produce masked regions (11) and unmasked regions (12); implanting ions through the unmasked regions (12) in order to produce implantation regions (13) in the semiconductor wafer (1); and dividing the semiconductor wafer (1) along the implantation regions (13), wherein the growth substrate (2) or at least one part of the growth substrate (2) is separated from the semiconductor wafer.
摘要翻译：一种用于横向分割半导体晶片（1）的方法包括以下方法步骤：提供生长衬底（2）; 在生长衬底（2）上外延生长包括功能半导体层（5）的半导体层序列（3）; 将掩模层（10）施加到所述半导体层序列（3）的部分区域以产生掩蔽区域（11）和未屏蔽区域（12）; 通过未掩模区域（12）注入离子，以便在半导体晶片（1）中产生注入区域（13）; 以及沿着所述注入区域（13）划分所述半导体晶片（1），其中所述生长衬底（2）或所述生长衬底（2）的至少一部分与所述半导体晶片分离。

6. 发明授权

US07588998B2 Method for producing a semiconductor element 有权
标题翻译：半导体元件的制造方法
公开(公告)号：US07588998B2
公开(公告)日：2009-09-15
申请号：US10503042
申请日：2003-01-30
申请人： Michael Fehrer , Berthold Hahn , Volker Härle , Stephan Kaiser , Frank Otte , Andreas Plössl
发明人： Michael Fehrer , Berthold Hahn , Volker Härle , Stephan Kaiser , Frank Otte , Andreas Plössl
IPC分类号： H01L21/30
CPC分类号： H01L21/76251 , B23K26/40 , B23K26/50 , B23K2103/172 , C30B29/40 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/2007 , H01L24/29 , H01L24/83 , H01L33/0079 , H01L2224/29 , H01L2224/29101 , H01L2224/29111 , H01L2224/29144 , H01L2224/29298 , H01L2224/83001 , H01L2224/8319 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/0106 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/157 , H01L2924/15763 , H01L2924/00 , H01L2924/01026 , H01L2924/01027 , H01L2924/01028 , H01L2924/01046 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： A method for producing a semiconductor component, in particular a thin-film component, a semiconductor layer being separated from a substrate by irradiation with a laser beam having a plateaulike spatial beam profile. Furthermore, the semiconductor layer, prior to separation, is applied to a carrier with an adapted thermal expansion coefficient. The method is suitable in particular for semiconductor layers containing a nitride compound semiconductor.
摘要翻译：一种用于制造半导体部件的方法，特别是薄膜部件，通过用具有平板空间光束轮廓的激光束照射与基板分离的半导体层。此外，半导体层在分离之前被施加到具有适应的热膨胀系数的载体上。该方法特别适用于含有氮化物半导体的半导体层。

7. 发明授权

US07524737B2 Method of fabricating a semiconductor chip with a nitride compound semiconductor material 有权
标题翻译：用氮化物半导体材料制造半导体芯片的方法
公开(公告)号：US07524737B2
公开(公告)日：2009-04-28
申请号：US11314447
申请日：2005-12-20
申请人： Georg Brüderl , Volker Härle
发明人： Georg Brüderl , Volker Härle
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L33/0075 , H01L33/0079 , H01L33/32 , H01L33/405
摘要： In a process for producing a semiconductor chip, a functional semiconductor layer sequence (2) is grown epitaxially on a growth substrate (1). Then, a separating zone (4), which lies parallel to a main surface (8) of the growth substrate (1), is formed in the growth substrate (1) by ion implantation, the ion implantation taking place through the functional semiconductor layer sequence (2). Then, a handle substrate (6) is applied to the functional semiconductor layer sequence (2), and a part of the growth substrate (1) which is remote from the handle substrate (6) as seen from the separating zone (4), is detached along the separating zone (4).
摘要翻译：在制造半导体芯片的工艺中，在生长衬底（1）上外延生长功能性半导体层序列（2）。然后，通过离子注入在生长衬底（1）中形成平行于生长衬底（1）的主表面（8）平行的分离区（4），通过功能半导体层发生离子注入序列（2）。然后，从功能半导体层序列（2）施加手柄基板（6），从分离区域（4）观察到远离手柄基板（6）的生长基板（1）的一部分，沿分离区（4）分离。

8. 发明授权

US06864112B1 Method of production of a patterned semiconductor layer 失效
标题翻译：图案化半导体层的制造方法
公开(公告)号：US06864112B1
公开(公告)日：2005-03-08
申请号：US09722461
申请日：2000-11-28
申请人： Volker Härle
发明人： Volker Härle
IPC分类号： H01L21/20 , H01L21/205 , H01L21/306 , H01S5/02 , H01S5/026 , H01L21/00
CPC分类号： H01L21/30604
摘要： The present invention relates to a method for the production of semiconductor components. This method comprises the steps of applying masking layers and components on epitaxial semiconductor substrates within the epitaxy reactor without removal of the substrate from the reactor. The masking layers may be HF soluble such that a gas etchant may be introduced within the reactor so as to etch a select number and portion of masking layers. This method may be used for production of lateral integrated components on a substrate wherein the components may be of the same or different type. Such types include electronic and optoelectronic components. Numerous masking layers may be applied, each defining particular windows intended to receive each of the various components. In the reactor, the masks may be selectively removed, then the components grown in the newly exposed windows.
摘要翻译：本发明涉及半导体元件的制造方法。该方法包括以下步骤：在外延反应器内的外延半导体衬底上施加掩模层和组件，而不从反应器移除衬底。掩蔽层可以是HF可溶的，使得可以在反应器内引入气体蚀刻剂，以便蚀刻选择数量和部分掩蔽层。该方法可以用于在衬底上生产横向集成组件，其中组件可以具有相同或不同的类型。这些类型包括电子和光电子元件。可以应用许多掩蔽层，每个屏蔽层限定旨在接收各种部件中的每一个的特定窗口。在反应器中，可以选择性地去除掩模，然后在新露出的窗口中生长组分。

9. 发明授权

US06858881B2 Radiation-emitting semiconductor chip, and method for producing the semiconductor chip 有权
标题翻译：辐射发射半导体芯片，以及半导体芯片的制造方法
公开(公告)号：US06858881B2
公开(公告)日：2005-02-22
申请号：US10337089
申请日：2003-01-06
申请人： Dominik Eisert , Volker Härle , Frank Kühn , Ulrich Zehnder
发明人： Dominik Eisert , Volker Härle , Frank Kühn , Ulrich Zehnder
IPC分类号： H01L33/20 , H01L33/00 , H01L29/06
CPC分类号： H01L33/20
摘要： A semiconductor chip has a substrate that is in the form of a parallelepiped whose side surfaces are shaped as tilted parallelograms. Such a semiconductor chip has a high output efficiency and a homogeneous thermal load due to having at least two side surfaces that are provided with an acute angle and are in the form of parallelograms.
摘要翻译：半导体芯片具有呈平行六面体形式的基板，其侧表面被成形为倾斜的平行四边形。这样的半导体芯片具有高的输出效率和均匀的热负荷，这是由于具有至少两个设置有锐角的侧表面并且是平行四边形的形式。

10. 发明授权

US08809086B2 Method for fabricating a semiconductor component based on GaN 有权
标题翻译：用于制造基于GaN的半导体元件的方法
公开(公告)号：US08809086B2
公开(公告)日：2014-08-19
申请号：US13398425
申请日：2012-02-16
申请人： Stefan Bader , Dominik Eisert , Berthold Hahn , Volker Härle
发明人： Stefan Bader , Dominik Eisert , Berthold Hahn , Volker Härle
IPC分类号： H01L21/20
CPC分类号： H01L33/405 , H01L27/153 , H01L33/0079 , H01L33/44
摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.
摘要翻译：半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。衬底体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN基层，并且GaN基层沉积在中间层上。中间层和基板主体优选通过晶片接合工艺接合。

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