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51. 发明授权

US07187025B2 Ferroelectric material, ferroelectric film and method of manufacturing the same, ferroelectric capacitor and method of manufacturing the same, ferroelectric memory, and piezoelectric device 有权
标题翻译：铁电材料，铁电体膜及其制造方法，铁电电容器及其制造方法，铁电存储器及压电元件
公开(公告)号：US07187025B2
公开(公告)日：2007-03-06
申请号：US10807357
申请日：2004-03-24
申请人： Yasuaki Hamada , Takeshi Kijima , Junichi Karasawa , Koji Ohashi , Eiji Natori
发明人： Yasuaki Hamada , Takeshi Kijima , Junichi Karasawa , Koji Ohashi , Eiji Natori
IPC分类号： H01L29/76
CPC分类号： H01L21/02197 , G11C11/22 , H01L21/02356 , H01L21/31691 , H01L27/11502 , H01L41/1876 , H01L41/318
摘要： A ferroelectric material for forming a ferroelectric that is described by a general formula ABO3, includes an A-site compensation component which compensates for a vacancy of an A site, and a B-site compensation component which compensates for a vacancy of a B site.
摘要翻译：用于形成由通式ABO 3 3描述的铁电体的铁电材料包括补偿A位置的空位的A位点补偿部件和补偿A位置的B位点补偿部件一个B网站的空缺。

52. 发明申请

US20070045109A1 Insulating target material, method of manufacturing insulating target material, insulating complex oxide film, and device 失效
标题翻译：绝缘靶材料，绝缘材料的制造方法，绝缘复合氧化物膜及器件
公开(公告)号：US20070045109A1
公开(公告)日：2007-03-01
申请号：US11511663
申请日：2006-08-29
申请人： Takeshi Kijima , Takamitsu Higuchi
发明人： Takeshi Kijima , Takamitsu Higuchi
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , C04B35/493 , C04B35/497 , C04B35/6264 , C04B35/6325 , C04B35/6346 , C04B2235/3234 , C04B2235/3239 , C04B2235/3248 , C04B2235/3251 , C04B2235/3255 , C04B2235/3258 , C04B2235/3287 , C04B2235/3418 , C04B2235/3427 , C04B2235/441 , C04B2235/449 , C04B2235/768 , C23C14/088 , H01L21/31691 , H01L41/0805 , H01L41/1876 , H01L41/316
摘要： An insulating target material for obtaining an insulating complex oxide film represented by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, and an element C including at least one of Nb and Ta.
摘要翻译：一种用于获得由通式AB 1-X C X O 3 3表示的绝缘复合氧化物膜的绝缘靶材料，包括至少Pb，包含Zr，Ti，V，W和Hf中的至少一种的元素B和包含Nb和Ta中的至少一种的元素C.

53. 发明申请

US20060222895A1 Piezoelectric film laminate and method of manufacturing the same 失效
公开(公告)号：US20060222895A1
公开(公告)日：2006-10-05
申请号：US11389985
申请日：2006-03-27
申请人： Takamitsu Higuchi , Takeshi Kijima , Mayumi Ueno
发明人： Takamitsu Higuchi , Takeshi Kijima , Mayumi Ueno
IPC分类号： B05D5/12 , B05D3/02
CPC分类号： H01L41/0815 , H01L41/1873 , H01L41/318 , H01L41/319 , Y10T29/42
摘要： A piezoelectric film laminate including a sapphire substrate and a lead zirconate titanate niobate film and a potassium niobate film formed on the sapphire substrate.

54. 发明申请

US20060140031A1 Ferroelectric film and method of manufacturing the same 审中-公开
标题翻译：铁电薄膜及其制造方法
公开(公告)号：US20060140031A1
公开(公告)日：2006-06-29
申请号：US11316172
申请日：2005-12-22
申请人： Takeshi Kijima , Yasuaki Hamada , Tomokazu Kobayashi
发明人： Takeshi Kijima , Yasuaki Hamada , Tomokazu Kobayashi
IPC分类号： G11C7/00
CPC分类号： H01L21/02197 , C04B35/495 , C04B35/624 , C04B35/6264 , C04B35/64 , C04B2235/3251 , C04B2235/3255 , C04B2235/3287 , C04B2235/3298 , C04B2235/3418 , C04B2235/441 , C04B2235/449 , C04B2235/662 , C04B2235/768 , H01L21/02205 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L27/11507
摘要： A method of manufacturing a ferroelectric film including: (a) mixing a polycarboxylate containing niobium, a polycarboxylate containing bismuth, a polycarboxylic acid or a polycarboxylic acid ester, and an organic solvent; and (b) applying the resulting mixed solution to a substrate and heat-treating the applied mixed solution to form a ferroelectric film including BiNbO4.
摘要翻译：一种制造铁电体膜的方法，包括：（a）将含有铌的聚羧酸酯，含有铋的多元羧酸酯，多元羧酸或多元羧酸酯与有机溶剂混合; 和（b）将所得到的混合溶液涂布在基板上，对所施加的混合溶液进行热处理，形成包含BiNbO 4的铁电体膜。

55. 发明申请

US20060120940A1 Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element 有权
公开(公告)号：US20060120940A1
公开(公告)日：2006-06-08
申请号：US11314996
申请日：2005-12-23
申请人： Eiji Natori , Takeshi Kijima , Koichi Furuyama , Yuzo Tasaki
发明人： Eiji Natori , Takeshi Kijima , Koichi Furuyama , Yuzo Tasaki
IPC分类号： B32B9/00 , B32B19/00
CPC分类号： C04B35/457 , C04B35/01 , C04B35/16 , C04B35/42 , C04B35/4521 , C04B35/465 , C04B35/472 , C04B35/475 , C04B35/491 , C04B35/493 , C04B35/495 , C04B35/497 , C04B35/624 , C04B35/6264 , C04B35/62645 , C04B35/64 , C04B2235/3205 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3287 , C04B2235/3296 , C04B2235/3298 , C04B2235/3418 , C04B2235/3427 , C04B2235/3436 , C04B2235/3445 , C04B2235/3454 , C04B2235/3463 , C04B2235/664 , C04B2235/76 , C04B2235/80 , C23C14/08 , C23C16/40 , C23C16/409 , C23C18/1208 , C23C18/1225 , H01L21/02197 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L41/1878 , H01L41/318
摘要： A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

56. 发明申请

US20060073616A1 Ferroelectric capacitor and its manufacturing method, and ferroelectric memory device 有权
标题翻译：铁电电容及其制造方法和铁电存储器件
公开(公告)号：US20060073616A1
公开(公告)日：2006-04-06
申请号：US11233264
申请日：2005-09-22
申请人： Koji Ohashi , Takeshi Kijima
发明人： Koji Ohashi , Takeshi Kijima
IPC分类号： H01L21/00 , H01L21/8242 , H01L21/20
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/55 , H01L28/65 , H01L28/75
摘要： A method for manufacturing a ferroelectric capacitor includes successively disposing a lower electrode, at least one intermediate electrode and an upper electrode over a base substrate, and providing ferroelectric films between the electrodes, respectively. In the step of forming the intermediate electrode, (a) a first metal film is formed by a sputter method over the ferroelectric film, and (b) a second metal film is formed by a vapor deposition method over the first metal film.
摘要翻译：铁电电容器的制造方法包括：在基底基板上依次配置下电极，至少一个中间电极和上电极，在电极之间分别设置铁电体膜。在形成中间电极的步骤中，（a）通过溅射法在铁电体膜上形成第一金属膜，（b）通过蒸镀法在第一金属膜上形成第二金属膜。

57. 发明申请

US20060056225A1 Ferroelectric memory device 失效
标题翻译：铁电存储器件
公开(公告)号：US20060056225A1
公开(公告)日：2006-03-16
申请号：US11216078
申请日：2005-09-01
申请人： Masami Hashimoto , Takeshi Kijima , Junichi Karasawa , Mayumi Ueno
发明人： Masami Hashimoto , Takeshi Kijima , Junichi Karasawa , Mayumi Ueno
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C11/223
摘要： To provide a nondestructive-read ferroelectric memory capable of realizing high speed, high integration, and long service life. The present invention is provided with an MFSFET 100 having a ferroelectric thin film at its gate portion, word line 104, bit line 105, and bit line 106 so as to apply voltage equal to or higher than the coercive electric field of the ferroelectric thin film between the bit line 105 and the word line 104 at first write timing and apply voltage equal to or higher than the coercive electric field between the bit line 106 and the word line 104 at second write timing, and applies voltage equal to or lower than the coercive electric field of the ferroelectric thin film between the bit line 105 and the word line 104 at first read timing to detect the current flowing between the both bit lines, and applies voltage equal to or lower than the coercive electric field between the bit line 106 and the word line 104 at second read timing to detect the current flowing between the both bit lines.
摘要翻译：提供能够实现高速，高集成度，长使用寿命的非破坏性读取型铁电存储器。

58. 发明申请

US20050181523A1 Ferroelectric capacitor, method of manufacturing the same, and ferroelectric memory 审中-公开
标题翻译：铁电电容器，其制造方法和铁电存储器
公开(公告)号：US20050181523A1
公开(公告)日：2005-08-18
申请号：US11056033
申请日：2005-02-11
申请人： Takeshi Kijima
发明人： Takeshi Kijima
IPC分类号： H01L27/105 , H01L21/00 , H01L21/02 , H01L21/3115 , H01L21/314 , H01L21/768 , H01L21/8242 , H01L21/8246 , H01L27/115 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11502 , H01L21/02115 , H01L21/31155 , H01L21/3146 , H01L21/76801 , H01L21/76886 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： A method of manufacturing a ferroelectric capacitor is provided capable of reducing manufacturing damages. In the method of manufacturing a ferroelectric capacitor, by sequentially depositing a lower electrode, a ferroelectric film, and an upper electrode on a substrate, dielectric films are formed, and then an ion beam is irradiated onto predetermined regions of the dielectric films, or ions of a predetermined element are injected onto the regions. Then, the regions where the ion beam is irradiated or the ions are injected onto are transformed into conductors, and thus it is possible to form the lower electrode and/or the upper electrode without etching.
摘要翻译：提供一种制造铁电电容器的方法，其能够减少制造损伤。在制造铁电电容器的方法中，通过在基板上顺序地沉积下电极，铁电体膜和上电极，形成电介质膜，然后将离子束照射到电介质膜或离子的规定区域的预定元素被注入到该区域上。然后，将离子束照射的区域或离子注入的区域变换为导体，因此可以在不进行蚀刻的情况下形成下部电极和/或上部电极。

59. 发明授权

US06922351B2 Ferroelectric memory device and method of manufacturing the same 失效
标题翻译：铁电存储器件及其制造方法
公开(公告)号：US06922351B2
公开(公告)日：2005-07-26
申请号：US10426635
申请日：2003-05-01
申请人： Eiji Natori , Takeshi Kijima
发明人： Eiji Natori , Takeshi Kijima
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115 , G11C7/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A ferroelectric memory device includes first electrodes, second electrodes arranged in a direction which intersects the first electrodes, and ferroelectric films disposed in at least intersecting regions of the first electrodes and the second electrodes. Capacitors formed of the first electrodes, the ferroelectric films, and the second electrodes are disposed in a matrix. A ferroelectric phase and a paraelectric phase are mixed in each of the ferroelectric films.
摘要翻译：铁电存储器件包括第一电极，沿与第一电极相交的方向布置的第二电极，以及设置在第一电极和第二电极的至少交叉区域中的铁电体膜。由第一电极，铁电体膜和第二电极形成的电容器以矩阵形式设置。在每个铁电体膜中混合铁电相和顺电相。

60. 发明申请

US20050148200A1 Film forming apparatus, substrate for forming oxide thin film and production method thereof 有权
标题翻译：成膜装置，用于形成氧化物薄膜的基板及其制造方法
公开(公告)号：US20050148200A1
公开(公告)日：2005-07-07
申请号：US11071116
申请日：2005-03-04
申请人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
发明人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
IPC分类号： C23C14/22 , C23C14/50 , C23C14/56 , H01L21/285 , H01L29/04 , H01L21/31 , H01L31/036
CPC分类号： C23C14/568 , C23C14/505
摘要： The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supply to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, a vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.
摘要翻译：本发明提供一种成膜装置，其能够在相同的室中依次用两种成膜机构形成膜。根据本发明的成膜装置包括设置在成膜室内的一侧的Pt靶，向Pt靶供给的溅射输出机构，设置在成膜室内的另一侧的Pt蒸镀源，蒸镀输出机构，供给Pt蒸镀源，设置在成膜室内的Pt靶和Pt蒸镀源之间的基板保持架，安装基板;旋转机构，使基板保持架移动，使基板指向Pt靶或Pt气相沉积源，当衬底经受溅射膜形成时加热衬底的加热机构，以及当衬底经历气相沉积膜形成时冷却衬底的冷却机构。

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