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1. 发明授权

US09034418B2 Method for manufacturing piezoelectric film 有权
标题翻译：制造压电薄膜的方法
公开(公告)号：US09034418B2
公开(公告)日：2015-05-19
申请号：US13037600
申请日：2011-03-01
申请人： Yasuaki Hamada
发明人： Yasuaki Hamada
IPC分类号： B05D5/12 , B41J2/14 , H01L41/187 , B05D3/00 , C23C18/12 , B05D3/02 , C04B35/26 , H01L41/318
CPC分类号： B41J2/14233 , B05D3/007 , B05D3/02 , B05D5/12 , C04B35/2633 , C04B2235/3215 , C04B2235/3236 , C04B2235/3298 , C04B2235/3418 , C04B2235/441 , C04B2235/768 , C04B2235/787 , C23C18/1208 , H01L41/187 , H01L41/1878 , H01L41/318
摘要： A method for manufacturing a piezoelectric film includes: forming a piezoelectric precursor film including Bi, Fe, Mn, Ba, and Ti; and obtaining a piezoelectric film preferentially oriented with the (110) plane by crystallizing the piezoelectric precursor film.
摘要翻译：一种制造压电薄膜的方法包括：形成包含Bi，Fe，Mn，Ba和Ti的压电前体膜; 并且通过使压电前体膜结晶来获得优先用（110）面取向的压电膜。

2. 发明授权

US08395302B2 Piezoelectric material and piezoelectric element 有权
标题翻译：压电材料和压电元件
公开(公告)号：US08395302B2
公开(公告)日：2013-03-12
申请号：US13328302
申请日：2011-12-16
申请人： Yasuaki Hamada , Takeshi Kijima
发明人： Yasuaki Hamada , Takeshi Kijima
IPC分类号： H01L41/09
CPC分类号： H01L41/18 , B41J2/045 , B41J2/14233 , B41J2/161 , B41J2/1645 , H01L41/0815 , H01L41/1878 , H01L41/318
摘要： A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1−x) % of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1−x)Tc(A)+x Tc(B)≧300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B.
摘要翻译：压电元件包括第一电极，设置在第一电极上的压电膜和设置在压电膜上的第二电极。该压电膜由无铅化的压电材料构成，并且通过混合100（1-x）％的在25℃下具有0.5C / m 2以上的自发极化的材料A和100％的具有压电特性和介电常数在25℃下为1000以上，其中（1-x）Tc（A）+ x Tc（B）≥300℃，其中Tc（A）是材料的居里温度 A和Tc（B）是材料B的居里温度。

3. 发明申请

US20120086758A1 PIEZOELECTRIC MATERIAL AND PIEZOELECTRIC ELEMENT 有权
标题翻译：压电材料和压电元件
公开(公告)号：US20120086758A1
公开(公告)日：2012-04-12
申请号：US13328302
申请日：2011-12-16
申请人： Yasuaki HAMADA , Takeshi KIJIMA
发明人： Yasuaki HAMADA , Takeshi KIJIMA
IPC分类号： H01L41/18 , B41J2/045 , H01L41/047
CPC分类号： H01L41/18 , B41J2/045 , B41J2/14233 , B41J2/161 , B41J2/1645 , H01L41/0815 , H01L41/1878 , H01L41/318
摘要： A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1−x) % of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1−x)Tc(A)+x Tc(B)≧300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B.
摘要翻译：压电元件包括第一电极，设置在第一电极上的压电膜和设置在压电膜上的第二电极。该压电膜由无铅化的压电材料构成，并且通过混合100（1-x）％的在25℃下具有0.5C / m 2以上的自发极化的材料A和100％的具有压电特性和介电常数在25℃下为1000以上，其中（1-x）Tc（A）+ x Tc（B）≥300℃，其中Tc（A）是材料的居里温度 A和Tc（B）是材料B的居里温度。

4. 发明授权

US08102100B2 Piezoelectric material and piezoelectric element 有权
标题翻译：压电材料和压电元件
公开(公告)号：US08102100B2
公开(公告)日：2012-01-24
申请号：US12413796
申请日：2009-03-30
申请人： Yasuaki Hamada , Takeshi Kijima
发明人： Yasuaki Hamada , Takeshi Kijima
IPC分类号： H01L41/09
CPC分类号： H01L41/18 , B41J2/045 , B41J2/14233 , B41J2/161 , B41J2/1645 , H01L41/0815 , H01L41/1878 , H01L41/318
摘要： A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1−x)% of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1−x)Tc(A)+xTc(B)≧300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B.
摘要翻译：压电元件包括第一电极，设置在第一电极上的压电膜和设置在压电膜上的第二电极。该压电膜由无铅化的压电材料构成，并且通过混合100（1-x）％的在25℃下具有0.5C / m 2以上的自发极化的材料A和100％的具有压电特性和在25℃下介电常数为1000以上的介电常数，其中（1-x）Tc（A）+ xTc（B）≥300℃，其中Tc（A）是材料A的居里温度 Tc（B）是材料B的居里温度。

5. 发明申请

US20110216131A1 LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, AND PIEZOELECTRIC ELEMENT 有权
标题翻译：液体喷射头，液体喷射装置和压电元件
公开(公告)号：US20110216131A1
公开(公告)日：2011-09-08
申请号：US13038320
申请日：2011-03-01
申请人： Yasuaki Hamada
发明人： Yasuaki Hamada
IPC分类号： B41J2/045 , H01L41/18
CPC分类号： B41J2/045 , B41J2/14233 , H01L41/0805 , H01L41/1878 , H01L41/318
摘要： There are provided a piezoelectric element comprising a first electrode, a piezoelectric layer and a second electrode, the piezoelectric layer is made of a piezoelectric material that contains a bismuth ferrite and silicon dioxide.
摘要翻译：提供了包括第一电极，压电层和第二电极的压电元件，压电层由含有铋铁氧体和二氧化硅的压电材料制成。

6. 发明授权

US07778060B2 Ferroelectric memory 有权
标题翻译：铁电存储器
公开(公告)号：US07778060B2
公开(公告)日：2010-08-17
申请号：US11733891
申请日：2007-04-11
申请人： Yasuaki Hamada
发明人： Yasuaki Hamada
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A ferroelectric memory includes: a memory cell having a ferroelectric capacitor, wherein, in a read-out operation, a first signal Q1 is given when a first voltage is applied to the ferroelectric capacitor, and a second signal Q2 is given when a second voltage having an identical magnitude as a magnitude of the first voltage in a different polarity is applied to the ferroelectric capacitor, and a judgment is made that the memory cell stores first data when Q1/Q2 is greater than ½, and second data when Q1/Q2 is smaller than ½.
摘要翻译：铁电存储器包括：具有铁电电容器的存储单元，其中，在读出操作中，当向所述铁电电容器施加第一电压时，给出第一信号Q1，并且当第二电压具有与不同极性的第一电压的幅度相同的大小的值被施加到铁电电容器，并且当Q1 / Q2大于1/2时，判断存储单元存储第一数据，当Q1 / Q2 小于1/2。

7. 发明授权

US07713348B2 Precursor composition, method of manufacturing precursor composition, inkjet coating ink, method of manufacturing ferroelectric film, piezoelectric device, semiconductor device, piezoelectric actuator, inkjet recording head, and inkjet printer 有权
标题翻译：前体组合物，前体组合物的制造方法，喷墨涂布油墨，铁电体膜的制造方法，压电元件，半导体元件，压电致动器，喷墨记录头，喷墨打印机
公开(公告)号：US07713348B2
公开(公告)日：2010-05-11
申请号：US11312971
申请日：2005-12-20
申请人： Takeshi Kijima , Setsuya Iwashita , Yasuaki Hamada
发明人： Takeshi Kijima , Setsuya Iwashita , Yasuaki Hamada
IPC分类号： C09D11/00
CPC分类号： C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/82 , C01P2004/03 , C01P2006/40 , C04B35/493 , C04B35/495 , C04B35/499 , C04B35/624 , C04B35/6264 , C04B2235/3251 , C04B2235/3287 , C04B2235/3296 , C04B2235/3418 , C04B2235/3427 , C04B2235/441 , C04B2235/449 , C09D11/30 , C09D11/36 , C23C18/1216 , C23C18/1254 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L41/1876 , H01L41/318
摘要： A precursor composition including a precursor for forming a ferroelectric, the ferroelectric being shown by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, an element C including at least one of Nb and Ta, the precursor including at least the element B and the element C and part of the precursor including an ester bond, the precursor being dissolved or dispersed in an organic solvent, and the organic solvent including at least a first alcohol and a second alcohol having a boiling point and viscosity higher than a boiling point and viscosity of the first alcohol.
摘要翻译：一种前体组合物，其包含用于形成铁电体的前体，铁电体由通式AB1-XCXO3表示，元素A至少包含Pb，元素B包括Zr，Ti，V，W和Hf中的至少一种，包含Nb和Ta中的至少一种的元素C，所述前体至少包含元素B和元素C，所述前体的一部分包含酯键，所述前体溶解或分散在有机溶剂中，所述有机溶剂包括至少第一醇和第二醇的沸点和粘度高于第一醇的沸点和粘度。

8. 发明申请

US20090243438A1 PIEZOELECTRIC MATERIAL AND PIEZOELECTRIC ELEMENT 有权
标题翻译：压电材料和压电元件
公开(公告)号：US20090243438A1
公开(公告)日：2009-10-01
申请号：US12413796
申请日：2009-03-30
申请人： Yasuaki HAMADA , Takeshi KIJIMA
发明人： Yasuaki HAMADA , Takeshi KIJIMA
IPC分类号： H01L41/187 , B41J2/045
CPC分类号： H01L41/18 , B41J2/045 , B41J2/14233 , B41J2/161 , B41J2/1645 , H01L41/0815 , H01L41/1878 , H01L41/318
摘要： A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1−x)% of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1−x)Tc(A)+xTc(B)≧300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B.
摘要翻译：压电元件包括第一电极，设置在第一电极上的压电膜和设置在压电膜上的第二电极。该压电膜由无铅化的压电材料构成，并且通过混合100（1-x）％的在25℃下具有0.5C / m 2以上的自发极化的材料A和100％的具有压电特性和在25℃下的介电常数为1000以上的介电常数，其中（1-x）Tc（A）+ xTc（B）> = 300℃，其中Tc（A）是材料的居里温度 A和Tc（B）是材料B的居里温度。

9. 发明申请

US20080123243A1 FERROELECTRIC CAPACITOR 审中-公开
标题翻译：电磁电容器
公开(公告)号：US20080123243A1
公开(公告)日：2008-05-29
申请号：US11946366
申请日：2007-11-28
申请人： Yasuaki Hamada , Takeshi Kijima
发明人： Yasuaki Hamada , Takeshi Kijima
IPC分类号： H01G4/00
CPC分类号： H01G4/1209 , H01G4/1218 , H01G4/1236 , H01G4/33 , H01G7/06 , H01L27/11507 , H01L28/56
摘要： A ferroelectric capacitor includes: an electrode including a platinum film; a seed layer that is formed above the electrode and is composed of oxide having a perovskite structure expressed by a general formula, A(B1-xCx)O3; and a ferroelectric layer formed above the seed layer, wherein A is composed of at least one of Sr and Ca, B is composed of at least one of Ti, Zr and Hf, C is composed of at least one of Nb and Ta, and X is in a range of 0
摘要翻译：铁电电容器包括：包含铂膜的电极; 形成在电极上方并由具有由通式表示的钙钛矿结构的氧化物组成的晶种层A（B 1-x C x X）O _{3 ; 以及形成在种子层上的铁电层，其中A由Sr和Ca中的至少一种构成，B由Ti，Zr和Hf中的至少一种构成，C由Nb和Ta中的至少一种构成，以及 X在0}

10. 发明授权

US07255941B2 Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor 有权
标题翻译：铁电体膜，铁电体电容器，铁电体存储器，压电元件，半导体元件，铁电体膜的制造方法以及铁电体电容器的制造方法
公开(公告)号：US07255941B2
公开(公告)日：2007-08-14
申请号：US10690021
申请日：2003-10-22
申请人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori , Koji Ohashi
发明人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori , Koji Ohashi
IPC分类号： B32B9/00
CPC分类号： C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/77 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C01P2006/80 , H01B1/08 , H01G4/1254 , H01G4/33 , H01L21/02197 , H01L21/02282 , H01L21/316 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L41/0805 , H01L41/1876 , H01L41/318
摘要： A ferroelectric film is formed by an oxide that is described by a general formula AB1−xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05≦x
摘要翻译：铁氧体膜由通式AB 1-x N x O 3 O 3所描述的氧化物形成。 A元素至少包含Pb，B元素包括Zr，Ti，V，W，Hf和Ta中的至少一种。铁电体膜包括在0.05 <= x <1的范围内的Nb。铁电薄膜可用于1T1C，2T2C和简单矩阵类型的铁电存储器。

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