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    • 52. 发明申请
    • SLIDER WITH HIGH FREQUENCY VOLTAGE GROUND AND LOW FREQUENCY DC VOLTAGE ISOLATION
    • 具有高电压接地和低频直流电压隔离的滑动器
    • US20160027459A1
    • 2016-01-28
    • US14341701
    • 2014-07-25
    • HGST Netherlands B.V.
    • Tuan M. DinhDavid P. DruistDavid J. SeagleMichael M.H. Yang
    • G11B5/48H01L27/02H01L21/285H01L21/02H01L49/02H01L21/311
    • H01L28/60G11B5/102G11B5/6035G11B5/6082G11B5/6094H01L27/0288H01L28/20
    • In one embodiment, a slider includes a substrate, a magnetic head, and a coupling capacitor. In one embodiment, a slider includes a substrate, a magnetic head, and a coupling capacitor configured to AC couple an electronics ground of the slider to the substrate and DC decouple the electronics ground of the slider from the substrate, the coupling capacitor including: a first conductive layer, a gap layer positioned above the first conductive layer, a dielectric layer positioned above the gap layer and the first conductive layer, and a second conductive layer positioned above the dielectric layer. In another embodiment, a method for forming a capacitor includes forming a substrate, forming a first conductive layer above the substrate, forming a gap layer above the first conductive layer, forming a dielectric layer above the gap layer and the first conductive layer, and forming a second conductive layer above the dielectric layer.
    • 在一个实施例中,滑块包括基板,磁头和耦合电容器。 在一个实施例中,滑块包括衬底,磁头和耦合电容器,其被配置为将滑块的电子接地AC耦合到衬底,并且DC将滑块的电子接地与衬底分离,耦合电容器包括: 第一导电层,位于第一导电层上方的间隙层,位于间隙层上方的电介质层和第一导电层,以及位于介电层上方的第二导电层。 在另一个实施例中,形成电容器的方法包括:形成衬底,在衬底上形成第一导电层,在第一导电层之上形成间隙层,在间隙层和第一导电层之上形成电介质层,以及形成 介电层上方的第二导电层。
    • 56. 发明授权
    • Disk drive with air-flow control component
    • 带气流控制组件的磁盘驱动器
    • US09196312B2
    • 2015-11-24
    • US12630807
    • 2009-12-03
    • Naoshi MizumotoMasaki OtsukaSatoshi Suzuki
    • Naoshi MizumotoMasaki OtsukaSatoshi Suzuki
    • G11B5/54G11B21/22G11B33/14
    • G11B33/148
    • A disk drive. The disk drive includes a motor, a base to which the motor is affixed, an actuator supporting a head-slider, and an air-flow control component affixed inside the base. The motor is configured to spin a disk. The actuator is configured to access the disk and to rotate about a pivot shaft to move the head-slider. The air-flow control component includes a plate which faces a recording surface of the disk, and a support portion supporting the plate. The thickness of the plate gradually decreases towards an outflow side of the air-flow control component. The bodies of the plate and the support portion are made of resin; and, a surface of the plate is configured to be held at an electrical potential selected from the group consisting of ground potential and a negative potential.
    • 磁盘驱动器 磁盘驱动器包括电动机,固定有电动机的基座,支撑头部滑块的致动器以及固定在基座内的气流控制部件。 电机配置为旋转磁盘。 致动器被配置为接近盘并围绕枢转轴旋转以移动头部滑块​​。 气流控制部件包括面向盘的记录表面的板和支撑板的支撑部。 板的厚度朝向气流控制部件的流出侧逐渐减小。 板的主体和支撑部分由树脂制成; 并且,所述板的表面被配置为保持在从由地电位和负电位组成的组中选择的电位。
    • 60. 发明授权
    • Tunneling magnetoresistive (TMR) read head with reduced gap thickness
    • 隧道磁阻(TMR)读头,间隙厚度减小
    • US09177575B1
    • 2015-11-03
    • US14561265
    • 2014-12-05
    • HGST Netherlands B.V.
    • Zheng GaoSangmun OhSusumu Okamura
    • G11B5/39
    • G11B5/3912G01R33/098G11B5/3909H01L43/08H01L43/10
    • A tunneling magnetoresistive (TMR) read head has a read gap with a reduced thickness. A multilayer seed layer includes a first ferromagnetic seed layer on the lower shield, a ferromagnetic NiFe alloy on the first seed layer, and a third seed layer of Ru or Pt on the NiFe seed layer. The first and NiFe seed layers are magnetically part of the lower shield, thereby effectively reducing the read gap thickness. A free layer/capping layer structure includes a multilayer ferromagnetic free layer and a Hf capping layer on the free layer. The free layer includes a B-containing upper layer in contact with the Hf capping layer prior to annealing. When the sensor is annealed Hf diffuses into the B-containing upper layer, forming an interface layer. The Hf-containing interface layer possesses negative magnetostriction, so the free layer is not required to contain NiFe.
    • 隧道磁阻(TMR)读头具有减小厚度的读取间隙。 多层种子层包括下屏蔽上的第一铁磁种子层,第一籽晶层上的铁磁性NiFe合金,以及NiFe种子层上的Ru或Pt的第三晶种层。 第一和NiFe种子层是下屏蔽的磁性部分,从而有效地减小读取间隙厚度。 自由层/覆盖层结构包括多层铁磁自由层和自由层上的Hf覆盖层。 自由层包括在退火之前与Hf覆盖层接触的含B的上层。 当传感器退火时,Hf扩散到含B的上层中,形成界面层。 含Hf的界面层具有负的磁致伸缩,因此自由层不需要含有NiFe。