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51. 发明授权

US07811851B2 Phase change memory structures 有权
标题翻译：相变记忆结构
公开(公告)号：US07811851B2
公开(公告)日：2010-10-12
申请号：US11864246
申请日：2007-09-28
申请人： Ramachandran Muralidhar , Tushar P. Merchant , Rajesh A. Rao
发明人： Ramachandran Muralidhar , Tushar P. Merchant , Rajesh A. Rao
IPC分类号： H01L21/06 , H01L29/02
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： A phase change memory cell has a first electrode, a plurality of pillars, and a second electrode. The plurality of pillars are electrically coupled with the first electrode. Each of the pillars comprises a phase change material portion and a heater material portion. The second electrode is electrically coupled to each of the pillars. In some examples, the pillars have a width less than 20 nanometers.
摘要翻译：相变存储单元具有第一电极，多个柱和第二电极。多个柱与第一电极电耦合。每个柱子包括相变材料部分和加热器材料部分。第二电极电耦合到每个支柱。在一些示例中，支柱具有小于20纳米的宽度。

52. 发明申请

US20100252794A1 COMPOSITE FILM FOR PHASE CHANGE MEMORY DEVICES 有权
标题翻译：用于相变存储器件的复合膜
公开(公告)号：US20100252794A1
公开(公告)日：2010-10-07
申请号：US12750323
申请日：2010-03-30
申请人： Tung-Ti YEH , Neng-Kuo CHEN , Cheng-Yuan TSAI , Chung-Yi YU , Chia-Shiung TSAI
发明人： Tung-Ti YEH , Neng-Kuo CHEN , Cheng-Yuan TSAI , Chung-Yi YU , Chia-Shiung TSAI
IPC分类号： H01L45/00 , H01L21/06
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/144 , H01L45/1675
摘要： A phase change memory device and a method of manufacture are provided. The phase change memory device includes a phase change layer electrically coupled to a top electrode and a bottom electrode, the phase change layer comprising a phase change material. A mask layer is formed overlying the phase change layer. A first sealing layer is formed overlying the mask layer, and a second sealing layer is formed overlying the first sealing layer.
摘要翻译：提供了一种相变存储器件及其制造方法。相变存储器件包括电耦合到顶电极和底电极的相变层，所述相变层包括相变材料。掩模层形成在相变层上。形成覆盖在掩模层上的第一密封层，并且形成覆盖在第一密封层上的第二密封层。

53. 发明授权

US07786460B2 Phase change memory device and manufacturing method 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07786460B2
公开(公告)日：2010-08-31
申请号：US11621390
申请日：2007-01-09
申请人： Hsiang Lan Lung , Shih-Hung Chen
发明人： Hsiang Lan Lung , Shih-Hung Chen
IPC分类号： H01L21/06 , H01L47/00
CPC分类号： G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L45/1691
摘要： A phase change memory device comprises a photolithographically formed phase change memory cell having first and second electrodes and a phase change element positioned between and electrically coupling the opposed contact elements of the electrodes to one another. The phase change element has a width, a length and a thickness. The length, the thickness and the width are less than a minimum photolithographic feature size of the process used to form the phase change memory cell. The size of the photoresist masks used in forming the memory cell may be reduced so that the length and the width of the phase change element are each less than the minimum photolithographic feature size.
摘要翻译：相变存储器件包括具有第一和第二电极的光刻形成的相变存储器单元和位于彼此之间并将电极的相对接触元件彼此电耦合的相变元件。相变元件具有宽度，长度和厚度。长度，厚度和宽度小于用于形成相变存储器单元的工艺的最小光刻特征尺寸。可以减小用于形成存储单元的光致抗蚀剂掩模的尺寸，使得相变元件的长度和宽度都小于最小光刻特征尺寸。

54. 发明申请

US20100203672A1 METHODS OF MANUFACTURING PHASE CHANGE MEMORY DEVICES 有权
标题翻译：制造相变存储器件的方法
公开(公告)号：US20100203672A1
公开(公告)日：2010-08-12
申请号：US12702350
申请日：2010-02-09
申请人： Sung-ho Eun , JaeHee Oh
发明人： Sung-ho Eun , JaeHee Oh
IPC分类号： H01L21/06
CPC分类号： H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/16
摘要： A phase change memory is manufactured by providing a substrate including a layer of phase-change material, forming a damascene pattern on the layer of phase-change material, and forming both a top electrode and a bit line in the damascene pattern.
摘要翻译：通过提供包括相变材料层的基板，在相变材料层上形成镶嵌图案，并且在镶嵌图案中形成顶部电极和位线两者来制造相变存储器。

55. 发明申请

US20100171087A1 SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100171087A1
公开(公告)日：2010-07-08
申请号：US12600333
申请日：2007-05-21
申请人： Kenzo Kurotsuchi , Motoyasu Terao , Takahiro Morikawa , Norikatsu Takaura
发明人： Kenzo Kurotsuchi , Motoyasu Terao , Takahiro Morikawa , Norikatsu Takaura
IPC分类号： H01L45/00 , H01L21/06
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： In a semiconductor device including a phase change memory element whose memory layer is formed of a phase change material of M (additive element)-Ge (germanium)-Sb (antimony)-Te (tellurium), both of high heat resistance and stable data retention property are achieved. The memory layer has a fine structure with a different composition ratio therein, and an average composition of MαGeXSbYTeZ forming the memory layer satisfies the relations of 0≦α≦0.4, 0.04≦X≦0.4, 0≦Y≦0.3, 0.3≦Z≦0.6, and 0.03≦(α+Y).
摘要翻译：在包括由M（添加元素）-Ge（锗）-Sb（锑）-Te（碲）的相变材料形成的存储层的相变存储元件的半导体器件中，高耐热性和稳定数据保留性能得以实现。存储层具有不同组成比的精细结构，形成记忆层的MαGeXSbYTeZ的平均组成满足0＆lt; nlE;α＆nlE; 0.4,0.04＆nlE; X＆lt; lE; 0.4,0＆amp; nlE; Y＆nlE; 0.3,0.3＆ Z＆NlE; 0.6和0.03＆nlE;（α+ Y）。

56. 发明申请

US20100151623A1 PHASE CHANGE MEMORY 有权
标题翻译：相变记忆
公开(公告)号：US20100151623A1
公开(公告)日：2010-06-17
申请号：US12713719
申请日：2010-02-26
申请人： Jun Liu
发明人： Jun Liu
IPC分类号： H01L21/06
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2013/008 , G11C2213/52 , H01L21/76849 , H01L21/76886 , H01L23/53257 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/16 , H01L2924/0002 , H01L2924/00
摘要： A PCRAM cell has a high resistivity bottom electrode cap to provide partial heating near the interface between the cell and the bottom electrode, preventing separation of the amorphous GST region from the bottom electrode, and reducing the programming current requirements.
摘要翻译： PCRAM电池具有高电阻率底部电极盖，以在电池和底部电极之间的界面附近提供部分加热，防止非晶GST区域与底部电极分离，并减少编程电流要求。

57. 发明申请

US20100124800A1 VARIABLE RESISTANCE MEMORY DEVICE, METHOD OF FABRICATING THE SAME, AND MEMORY SYSTEM INCLUDING THE SAME 审中-公开
标题翻译：可变电阻存储器件，其制造方法和包括其的存储器系统
公开(公告)号：US20100124800A1
公开(公告)日：2010-05-20
申请号：US12617754
申请日：2009-11-13
申请人： Jeonghee Park , Sunglae Cho , Yongho Ha , Hyun-Suk Kwon
发明人： Jeonghee Park , Sunglae Cho , Yongho Ha , Hyun-Suk Kwon
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L27/2463 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1683
摘要： A method of fabricating a variable resistance memory device includes a plasma etching process to remove contaminants from variable resistance material that forms variable resistance elements of the device. Bottom electrodes are formed on a semiconductor substrate. Next, an interlayer dielectric layer having trenches that expose the bottom electrodes is formed on the substrate. Then a layer of variable resistance material is formed. The variable resistance material covers the interlayer dielectric layer and fills the trenches. The variable resistance material is then planarized down to at least the top surface of the interlayer dielectric layer, thereby leaving elements of the variable resistance material in the trenches. The variable resistance material in the trenches is etched to remove contaminants, produced as a result of the planarizing process, from atop the variable resistance material in the trenches. A top electrode is then formed on the variable resistance material.
摘要翻译：制造可变电阻存储器件的方法包括等离子体蚀刻工艺，以从形成该器件的可变电阻元件的可变电阻材料中除去污染物。底电极形成在半导体衬底上。接下来，在基板上形成具有露出底部电极的沟槽的层间电介质层。然后形成一层可变电阻材料。可变电阻材料覆盖层间电介质层并填充沟槽。然后将可变电阻材料平坦化到至少层间电介质层的顶表面，从而将可变电阻材料的元件留在沟槽中。蚀刻沟槽中的可变电阻材料，以从沟槽中的可变电阻材料的顶部去除作为平坦化处理的结果产生的污染物。然后在可变电阻材料上形成顶部电极。

58. 发明申请

US20100117050A1 PHASE-CHANGE MEMORY ELEMENT 有权
标题翻译：相变记忆元素
公开(公告)号：US20100117050A1
公开(公告)日：2010-05-13
申请号：US12269282
申请日：2008-11-12
申请人： Frederick T. Chen , Ming-Jinn Tsai
发明人： Frederick T. Chen , Ming-Jinn Tsai
IPC分类号： H01L45/00 , H01L21/06
CPC分类号： H01L45/06 , H01L27/24 , H01L27/2409 , H01L27/2436 , H01L45/122 , H01L45/1226 , H01L45/1233 , H01L45/124 , H01L45/1246 , H01L45/1253 , H01L45/128 , H01L45/14 , H01L45/144 , H01L45/1608 , H01L45/1691
摘要： A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.
摘要翻译：提供具有电隔离导体的相变存储元件。相变存储元件包括：第一电极和第二电极; 电连接到第一电极和第二电极的相变材料层; 以及设置在第一电极和第二电极之间的至少两个电隔离导体，直接接触相变材料层。

59. 发明申请

US20100112752A1 Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same 有权
公开(公告)号：US20100112752A1
公开(公告)日：2010-05-06
申请号：US12654714
申请日：2009-12-30
申请人： Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son , Jang-Eun Heo
发明人： Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son , Jang-Eun Heo
IPC分类号： H01L21/06
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/143 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： In methods of manufacturing a variable resistance structure and a phase-change memory device, after forming a first insulation layer on a substrate having a contact region, a contact hole exposing the contact region is formed through the first insulation layer. After forming a first conductive layer on the first insulation layer to fill up the contact hole, a first protection layer pattern is formed on the first conductive layer. The first conductive layer is partially etched to form a contact and to form a pad on the contact. A second protection layer is formed on the first protection layer pattern, and then an opening exposing the pad is formed through the second protection layer and the first protection layer pattern. After formation of a first electrode, a phase-change material layer pattern and a second electrode are formed on the first electrode and the second protection layer.

60. 发明授权

US07709289B2 Memory elements having patterned electrodes and method of forming the same 有权
标题翻译：具有图案电极的存储元件及其形成方法
公开(公告)号：US07709289B2
公开(公告)日：2010-05-04
申请号：US11111917
申请日：2005-04-22
申请人： Jon Daley , Joseph F. Brooks
发明人： Jon Daley , Joseph F. Brooks
IPC分类号： H01L21/06
CPC分类号： H01L27/24
摘要： A memory element having a resistance variable material and methods for forming the same are provided. The method includes forming a plurality of first electrodes over a substrate and forming a blanket material stack over the first electrodes. The stack includes a plurality of layers, at least one layer of the stack includes a resistance variable material. The method also includes forming a first conductive layer on the stack and etching the conductive layer and at least one of the layers of the stack to form a first pattern of material stacks. The etched first conductive layer forming a plurality of second electrodes with a portion of the resistance variable material located between each of the first and second electrodes.
摘要翻译：提供了具有电阻变化材料的记忆元件及其形成方法。该方法包括在衬底上形成多个第一电极，并在第一电极上形成覆盖材料堆叠。堆叠包括多个层，堆叠的至少一层包括电阻可变材料。该方法还包括在堆叠上形成第一导电层并蚀刻导电层以及叠层的至少一层以形成材料堆叠的第一图案。蚀刻的第一导电层形成多个第二电极，其中电阻可变材料的一部分位于第一和第二电极之间。

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