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61. 发明申请

US20120243292A1 MEMORY DEVICE 有权
标题翻译：内存设备
公开(公告)号：US20120243292A1
公开(公告)日：2012-09-27
申请号：US13234388
申请日：2011-09-16
申请人： Akira TAKASHIMA , Daisuke Matsushita , Takashi Yamauchi , Yuuichi Kamimuta , Hidenori Miyagawa
发明人： Akira TAKASHIMA , Daisuke Matsushita , Takashi Yamauchi , Yuuichi Kamimuta , Hidenori Miyagawa
IPC分类号： G11C11/00 , H01L21/8239 , H01L45/00
CPC分类号： H01L45/04 , G11C11/56 , G11C13/0002 , G11C13/0007 , G11C2213/33 , G11C2213/52 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/085 , H01L45/148
摘要： According to one embodiment, a memory device includes a first electrode including a crystallized SixGe1-x layer (0≦x
摘要翻译：根据一个实施例，存储器件包括包括结晶的SixGe1-x层（0和n1E; x <1）的第一电极，包括金属元件的第二电极，在第一和第二电极之间的可变电阻部分，非晶Si层，以及控制非晶Si层中的细丝的控制电路，所述灯丝包括金属元件。

62. 发明授权

US08253190B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US08253190B2
公开(公告)日：2012-08-28
申请号：US13137919
申请日：2011-09-21
申请人： Daisuke Matsushita , Yuuichiro Mitani
发明人： Daisuke Matsushita , Yuuichiro Mitani
IPC分类号： H01L29/66
CPC分类号： H01L29/518 , H01L21/28273 , H01L21/28282 , H01L21/3145 , H01L27/115 , H01L27/11517 , H01L27/11521 , H01L27/11568 , H01L29/4234 , H01L29/4916 , H01L29/513 , H01L29/78 , H01L29/788 , H01L29/792
摘要： It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto.

63. 发明申请

US20100041193A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20100041193A1
公开(公告)日：2010-02-18
申请号：US12604950
申请日：2009-10-23
申请人： Yuichiro Mitani , Daisuke Matsushita
发明人： Yuichiro Mitani , Daisuke Matsushita
IPC分类号： H01L21/8247
CPC分类号： H01L21/28202 , H01L21/28273 , H01L29/513 , H01L29/518 , H01L29/66825 , H01L29/7885
摘要： A nonvolatile semiconductor memory device includes a floating gate electrode which is selectively formed on a main surface of a first conductivity type with a first gate insulating film interposed therebetween, a control gate electrode formed on the floating gate electrode with a second gate insulating film interposed therebetween, and source/drain regions of a second conductivity type which are formed in the main surface of the substrate in correspondence with the respective gate electrodes. The first gate electrode has a three-layer structure in which a silicon nitride film is held between silicon oxide films, and the silicon nitride film includes triple coordinate nitrogen bonds.
摘要翻译：非易失性半导体存储器件包括：浮置栅极，其选择性地形成在第一导电类型的主表面上，其间插入有第一栅极绝缘膜;控制栅电极，形成在浮置栅电极上，并具有介于其间的第二栅极绝缘膜，以及形成在与各个栅电极对应的基板的主表面中的第二导电类型的源极/漏极区域。第一栅电极具有氮化硅膜保持在氧化硅膜之间的三层结构，并且氮化硅膜包括三配位氮键。

64. 发明授权

US07586163B2 Semiconductor device having an electrode containing boron and manufacturing method thereof 失效
标题翻译：具有含硼电极的半导体装置及其制造方法
公开(公告)号：US07586163B2
公开(公告)日：2009-09-08
申请号：US11287192
申请日：2005-11-28
申请人： Koichi Kato , Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Yuichiro Mitani , Nobutoshi Aoki
发明人： Koichi Kato , Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Yuichiro Mitani , Nobutoshi Aoki
IPC分类号： H01L29/76
CPC分类号： H01L29/16 , H01L21/28176 , H01L21/28185 , H01L29/518
摘要： A semiconductor device includes a semiconductor substrate; an insulation film provided on the semiconductor substrate; and an electrode provided on the insulation film, and containing boron and a semiconductor material, wherein at least one element of the group V and carbon is introduced into an interface between the insulation film and the electrode.
摘要翻译：半导体器件包括半导体衬底; 设置在所述半导体基板上的绝缘膜; 以及设置在所述绝缘膜上并且含有硼和半导体材料的电极，其中所述V族和碳族中的至少一种元素被引入到所述绝缘膜和所述电极之间的界面中。

65. 发明申请

US20090184401A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090184401A1
公开(公告)日：2009-07-23
申请号：US12200467
申请日：2008-08-28
申请人： Daisuke MATSUSHITA , Yuuichiro Mitani
发明人： Daisuke MATSUSHITA , Yuuichiro Mitani
IPC分类号： H01L23/58 , H01L21/205
CPC分类号： H01L29/518 , H01L21/28273 , H01L21/28282 , H01L21/3145 , H01L27/115 , H01L27/11517 , H01L27/11521 , H01L27/11568 , H01L29/4234 , H01L29/4916 , H01L29/513 , H01L29/78 , H01L29/788 , H01L29/792
摘要： It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto.
摘要翻译：可以提供一种制造半导体器件的方法，该半导体器件具有不容易形成缺陷的高品质绝缘膜，并且经受较少的漏电流。一种制造半导体器件的方法，包括：在绝缘层上形成非晶硅层; 将氧引入非晶硅层; 以及通过氮化导入其中的氧的非晶硅层形成氮氧化硅层。

66. 发明申请

US20080305647A1 Method for Manufacturing a Semiconductor Device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20080305647A1
公开(公告)日：2008-12-11
申请号：US11547691
申请日：2006-08-28
申请人： Daisuke Matsushita , Koichi Muraoka , Koichi Kato , Yasushi Nakasaki , Yuichiro Mitani
发明人： Daisuke Matsushita , Koichi Muraoka , Koichi Kato , Yasushi Nakasaki , Yuichiro Mitani
IPC分类号： H01L21/469
CPC分类号： H01L27/11568 , C23C8/02 , C23C8/24 , C23C8/80 , H01L21/2652 , H01L21/28202 , H01L21/28238 , H01L21/28273 , H01L21/3144 , H01L21/3145 , H01L21/3185 , H01L27/115 , H01L27/11521 , H01L29/105 , H01L29/513
摘要： It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower.
摘要翻译：可以抑制成膜时的缺陷的产生。一种制造半导体器件的方法，包括：将半导体衬底放置在大气中，从而在所述半导体衬底的表面上形成氮化物膜，所述气氛包含氮化所述半导体衬底的表面的第一氮化气体和第一稀释气体实际上不与半导体衬底反应，第一稀释气体的分压和第一氮化气体的分压与第一氮化气体的分压之和的比率为5以上，气氛为40乇或更低。

67. 发明申请

US20080173930A1 Semiconductor memory device and method for manufacturing the same 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20080173930A1
公开(公告)日：2008-07-24
申请号：US11902132
申请日：2007-09-19
申请人： Hiroshi Watanabe , Daisuke Matsushita , Kouichi Muraoka , Yasushi Nakasaki , Koichi Kato
发明人： Hiroshi Watanabe , Daisuke Matsushita , Kouichi Muraoka , Yasushi Nakasaki , Koichi Kato
IPC分类号： H01L29/788 , H01L21/285 , H01L29/792
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/40114 , H01L29/40117 , H01L29/42324 , H01L29/513 , H01L29/792
摘要： The present invention provides a semiconductor memory device having a tunnel insulating film that does not degrade the endurance characteristics when writing/erasing is repeated, even if the tunnel insulating film is made thinner. The semiconductor memory device includes: a semiconductor substrate; a first insulating film formed on the semiconductor substrate, and including a silicon oxynitride film and a silicon-rich silicon oxide film formed on the silicon oxynitride film, the silicon oxynitride film having a stacked structure formed with a first silicon oxynitride layer, a silicon nitride layer, and a second silicon oxynitride layer in order; a charge storage layer formed on the first insulating film; a second insulating film formed on the charge storage layer; and a control gate formed on the second insulating film.
摘要翻译：本发明提供了一种半导体存储器件，其具有隧道绝缘膜，即使在隧道绝缘膜变薄的情况下，也不会降低写入/擦除时的耐久特性。半导体存储器件包括：半导体衬底; 形成在所述半导体衬底上的第一绝缘膜，并且包括氮氧化硅膜和形成在所述氧氮化硅膜上的富硅氧化物膜，所述氧氮化硅膜具有由第一氮氧化硅层形成的堆叠结构，氮化硅层和第二氮氧化硅层; 形成在所述第一绝缘膜上的电荷存储层; 形成在电荷存储层上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅极。

68. 发明申请

US20080135922A1 Nonvolatile semiconductor memory device and method for manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20080135922A1
公开(公告)日：2008-06-12
申请号：US11898603
申请日：2007-09-13
申请人： Yuichiro Mitani , Masahiro Koike , Yasushi Nakasaki , Daisuke Matsushita
发明人： Yuichiro Mitani , Masahiro Koike , Yasushi Nakasaki , Daisuke Matsushita
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/7881 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/513 , H01L29/792
摘要： A nonvolatile semiconductor memory device includes: a memory element, the memory element including: a semiconductor substrate; a first insulating film formed on a region in the semiconductor substrate located between a source region and a drain region, and having a stack structure formed with a first insulating layer, a second insulating layer, and a third insulating layer in this order, the first insulating layer including an electron trapping site, the second insulating layer not including the electron trapping site, and the third insulating layer including the electron trapping site, and the electron trapping site being located in a position lower than conduction band minimum of the first through third insulating layers while being located in a position higher than conduction band minimum of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.
摘要翻译：非易失性半导体存储器件包括：存储元件，所述存储元件包括：半导体衬底; 第一绝缘膜，形成在位于源区和漏区之间的半导体衬底的区域上，并且具有依次形成有第一绝缘层，第二绝缘层和第三绝缘层的堆叠结构，第一绝缘膜包含电子俘获位置的绝缘层，不包含电子俘获位置的第二绝缘层和包含电子捕获位点的第三绝缘层，并且电子捕获位点位于低于第一至第三区域的导带最小值的位置绝缘层位于高于形成半导体衬底的材料的导带最小值的位置; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。

69. 发明申请

US20070018231A1 Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件，半导体器件和非易失性半导体存储器件的制造方法
公开(公告)号：US20070018231A1
公开(公告)日：2007-01-25
申请号：US11491054
申请日：2006-07-24
申请人： Yuuichiro Mitani , Daisuke Matsushita , Ryuji Ooba , Isao Kamioka , Yoshio Ozawa
发明人： Yuuichiro Mitani , Daisuke Matsushita , Ryuji Ooba , Isao Kamioka , Yoshio Ozawa
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/513 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/42332 , H01L29/785 , H01L29/7881
摘要： A nonvolatile semiconductor memory device includes a gate portion formed by laminating a tunnel insulating film, floating gate electrode, inter-poly insulating film and control gate electrode on a semiconductor substrate, and source and drain regions formed on the substrate. The tunnel insulating film has a three-layered structure having a silicon nitride film sandwiched between silicon oxide films. The silicon nitride film is continuous in an in-plane direction and has 3-coordinate nitrogen bonds and at least one of second neighboring atoms of nitrogen is nitrogen.
摘要翻译：非易失性半导体存储器件包括通过在半导体衬底上层叠隧道绝缘膜，浮栅电极，多晶硅绝缘膜和控制栅极电极以及形成在衬底上的源极和漏极区域而形成的栅极部分。隧道绝缘膜具有夹在氧化硅膜之间的氮化硅膜的三层结构。氮化硅膜在面内方向上是连续的并且具有3-配位氮键，并且第二相邻的氮原子中的至少一个是氮。

70. 发明申请

US20050064667A1 Semiconductor device manufacturing method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US20050064667A1
公开(公告)日：2005-03-24
申请号：US10941814
申请日：2004-09-16
申请人： Daisuke Matsushita , Koichi Muraoka , Seiji Inumiya , Koichi Kato , Kazuhiro Eguchi , Mariko Takayanagi , Yasushi Nakasaki
发明人： Daisuke Matsushita , Koichi Muraoka , Seiji Inumiya , Koichi Kato , Kazuhiro Eguchi , Mariko Takayanagi , Yasushi Nakasaki
IPC分类号： H01L21/318 , H01L21/00 , H01L21/28 , H01L21/314 , H01L21/3205 , H01L21/336 , H01L21/4763 , H01L21/84 , H01L29/51 , H01L29/78
CPC分类号： H01L21/28202 , H01L21/022 , H01L21/02329 , H01L21/0234 , H01L21/3144 , H01L29/513 , H01L29/518
摘要： A semiconductor device manufacturing method comprises: forming a first nitride film on a semiconductor substrate; forming a first oxide film between said semiconductor substrate and said nitride film and forming a second oxide film on said nitride film; forming a second nitride film or an oxide and nitride film on said first nitride film by nitriding said second oxide film; and forming a gate electrode on a gate insulative film including said first oxide film, said first nitride film, and said second nitride film or said oxide and nitride film.
摘要翻译：半导体器件制造方法包括：在半导体衬底上形成第一氮化物膜; 在所述半导体衬底和所述氮化物膜之间形成第一氧化物膜，并在所述氮化膜上形成第二氧化膜; 通过氮化所述第二氧化物膜在所述第一氮化物膜上形成第二氮化物膜或氧化物和氮化物膜; 以及在包括所述第一氧化物膜，所述第一氮化物膜和所述第二氮化物膜或所述氧化物和氮化物膜的栅极绝缘膜上形成栅电极。

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